Fuji Electric 1MBI400V-120-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
1MBI400V-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 400A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Collector power dissipation Pc 1 device 2410 W
Junction temperature Tj 175
Operating junction temperature
(under switching conditions)
Case temperature Tc 125
Storage temperature Tstg -40~+125
Isolation voltage Between terminal and copper base (*1) V
Mounting (*2) M5 ro M6 6.0
Screw torque
Note *1: All terminals should be connected together during the test.
Note *2: Rec ommendable Value : 3.0-6.0 Nm (M5, M6)
Note *3: Recommendable Value : 1.1-2.0 Nm (M4)
Recommendable Value : 2.5-5.0 Nm (M6)
Terminals (*3)
CES 1200 V
GES ±20 V
Ic Continuous
Ic pulse 1ms 800
-Ic 400
-Ic pulse 1ms 800
Tjop 150
iso AC : 1min. 2500 VAC
M4 2.0
M6 5.0
Tc=100°C 400
Tc=25°C 480
A
°C
Nm
1
7777a
MARCH 2014
1MBI400V-120-50
3
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
CES VGE = 0V, VCE = 1200V
GES VCE = 0V, VGE = ±20V
GE (th) VCE = 20V, IC = 400mA
V
CE (sat)
(terminal)
V
CE (sat)
GE = 15V
V
IC = 400A
(chip)
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Internal gate resistance Rg(int) -
Input capacitance Cies V
GE
= 0V, VCE = 10V, f = 1MHz
ton
Turn-on time
Turn-off time
Forward on voltage
tr
tr(i)
toff
tf
V
F
(terminal)
V
F
(chip)
CC = 600V, IC = 400A
V
VGE = ±15V, RG = 1.8Ω
Tj=150°C, Ls=35nH
GE
= 0V
V
IF = 400A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Reverse recovery time trr I
F = 400A
Thermal resistance characteristics
Items Symbols Conditions
Thermal resistance (1device) Rth(j-c)
Contact thermal resistance (*4) Rth(c-f) with Thermal Compound - 0.0125 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal c ompound.
IGBT - - 0.062
Characteristics
min. typ. max.
- - 4.0
- - 400
6.0 6.5 7.0
- 1.95 2.40
- 2.25 -
2.30
- 1.75 2.15
- 2.05 -
2.10
- 1.9 -
- 36 -
- 0.60 -
- 0.20 -
- 0.08 -
- 1.00 -
- 0.14 -
- 1.85 2.30
- 2.00 -
1.95
- 1.70 2.15
- 1.85 -
1.80
- 0.20 -
Characteristics
min. typ. max.
IGBT Modules
Units
mA
nA
V
V
Ω
nF
µs
V
µs
Units
°C/WFWD - - 0.110
2
1MBI400V-120-50
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
800
600
400
Collector current: Ic [A]
200
0
0 1 2 3 4 5
VGE=20V
Collector-Emitter voltage: V
15V 15V
12V
10V
8V
CE [V]
Collector current vs. Collector-Emitter voltage (typ.)
GE= 15V / chip
V
1000
800
125°CTj=25°C 150°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
VGE= 20V
800
600
400
Collector current: Ic [A]
200
0
0 1 2 3 4 5
Collector-Emitter voltage: V
12V
10V
8V
CE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
8
600
400
Collector Current: Ic [A]
200
0
0 1 2 3 4
Collector-Emitter Voltage: V
CE [V]
6
4
2
Collector-Emitter Voltage: VCE [V]
0
5 10 15 20 25
Gate-Emitter Voltage: V
Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)
V
100
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Cies
10
***
Cres
Coes
Gate Capacitance: Cies, Coes, Cres [nF]
1
0 10 20 30
Collector-Emitter voltage: V
CE [V]
20
15
10
5
0
-5
-10
Gate-Emitter voltage: VGE [V]
-15
-20
-4 -2 0 2 4
cc=600V, Ic=400A, Tj= 25°C
V
CE
VGE
Gate charge: Qg [µC]
GE [V]
Ic=800A
Ic=400A
Ic=200A
800
600
400
200
0
-200
-400
-600
-800
Collector-Emitter voltage: VCE [V]
3
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