Fuji Electric 1MBI400V-120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

1MBI400V-120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 400A / 1 in one package

Features

High speed switching
Voltage drive
Low Inductance module structure

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)

Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage V
Gate-Emitter voltage V

Collector current

Collector power dissipation Pc 1 device 2410 W
Junction temperature Tj 175
Operating junction temperature

(under switching conditions)
Case temperature Tc 125
Storage temperature Tstg -40~+125
Isolation voltage Between terminal and copper base (*1) V

Mounting (*2) M5 ro M6 6.0

Screw torque

Note *1: All terminals should be connected together during the test.
Note *2: Rec ommendable Value : 3.0-6.0 Nm (M5, M6)
Note *3: Recommendable Value : 1.1-2.0 Nm (M4)
Recommendable Value : 2.5-5.0 Nm (M6)

Terminals (*3)

CES 1200 V
GES ±20 V

Ic Continuous

Ic pulse 1ms 800

-Ic 400

-Ic pulse 1ms 800

Tjop 150

iso AC : 1min. 2500 VAC

M4 2.0
M6 5.0

Tc=100°C 400
Tc=25°C 480

A

°C

Nm

1

7777a

MARCH 2014

1MBI400V-120-50

3

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

CES VGE = 0V, VCE = 1200V
GES VCE = 0V, VGE = ±20V

GE (th) VCE = 20V, IC = 400mA

V

CE (sat)

(terminal)

V

CE (sat)

GE = 15V

V
IC = 400A

(chip)

Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C

Internal gate resistance Rg(int) -
Input capacitance Cies V

GE

= 0V, VCE = 10V, f = 1MHz

ton

Turn-on time

Turn-off time

Forward on voltage

tr
tr(i)
toff
tf
V

F

(terminal)

V

F

(chip)

CC = 600V, IC = 400A

V
VGE = ±15V, RG = 1.8Ω
Tj=150°C, Ls=35nH

GE

= 0V

V
IF = 400A

Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C

Reverse recovery time trr I

F = 400A

Thermal resistance characteristics

Items Symbols Conditions

Thermal resistance (1device) Rth(j-c)

Contact thermal resistance (*4) Rth(c-f) with Thermal Compound - 0.0125 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal c ompound.

IGBT - - 0.062

Characteristics

min. typ. max.

- - 4.0

- - 400

6.0 6.5 7.0

- 1.95 2.40

- 2.25 -

2.30

- 1.75 2.15

- 2.05 -

2.10

- 1.9 -

- 36 -

- 0.60 -

- 0.20 -

- 0.08 -

- 1.00 -

- 0.14 -

- 1.85 2.30

- 2.00 -

1.95

- 1.70 2.15

- 1.85 -

1.80

- 0.20 -

Characteristics

min. typ. max.

IGBT Modules

Units

mA

nA

V

V

Ω

nF

µs

V

µs

Units

°C/WFWD - - 0.110

2

1MBI400V-120-50

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25°C / chip

1000

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

VGE=20V

Collector-Emitter voltage: V

15V 15V

12V

10V

8V

CE [V]

Collector current vs. Collector-Emitter voltage (typ.)

GE= 15V / chip

V

1000

800

125°CTj=25°C 150°C

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C / chip

1000

VGE= 20V

800

600

400

Collector current: Ic [A]

200

0

0 1 2 3 4 5

Collector-Emitter voltage: V

12V

10V

8V

CE [V]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25°C / chip

10

8

600

400

Collector Current: Ic [A]

200

0

0 1 2 3 4

Collector-Emitter Voltage: V

CE [V]

6

4

2

Collector-Emitter Voltage: VCE [V]

0

5 10 15 20 25

Gate-Emitter Voltage: V

Gate Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.)

V

100

VGE= 0V, ƒ= 1MHz, Tj= 25°C

Cies

10

***

Cres

Coes

Gate Capacitance: Cies, Coes, Cres [nF]

1

0 10 20 30

Collector-Emitter voltage: V

CE [V]

20

15

10

5

0

-5

-10

Gate-Emitter voltage: VGE [V]

-15

-20

-4 -2 0 2 4

cc=600V, Ic=400A, Tj= 25°C

V

CE

VGE

Gate charge: Qg [µC]

GE [V]

Ic=800A
Ic=400A
Ic=200A

800

600

400

200

0

-200

-400

-600

-800

Collector-Emitter voltage: VCE [V]

3

1MBI400V-120-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000

GE=±15V, Rg=1.8Ω, Tj=125°C

Collector current: Ic [A]

Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=400A, V

10000

1000

GE=±15V, Tj=125°C

toff

ton
tr

toff
ton

tr

tf

Switching time vs. Collector current (typ.)

Vcc=600V, V

10000

1000

100

Switching time: ton, tr, toff, tf [nsec]

10

0 200 400 600 800 1000

GE=±15V, Rg=1.8Ω, Tj=150°C

Collector current: Ic [A]

Switching loss vs. Collector current (typ.)

Vcc=600V, V

100

80

60

GE=±15V, RG=1.8Ω, Tj=125°C, 150°C

Tj=125oC

o

C

Tj=150

toff
ton

tr
tf

Eoff

Eon

100

Switching time: ton, tr, toff, tf [nsec]

10

1 10 100

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=400A, V

150

100

50

Switching loss: Eon, Eoff, Err [mJ/pulse]

0

1 10 100

Gate resistance: R

GE=±15V, Tj=125°C, 150°C

o

Tj=125

C

o

C

Tj=150

Gate resistance: R

tf

G [Ω]

G [Ω]

Eon

Eoff

Err

40

20

0

Switching loss: Eon, Eoff, Err [mJ/pulse]

0 200 400 600 800 1000

Collector current: Ic [A]

Reverse bias safe operating area (max.)

GE=±15V, Rg=1.8 , Tj=150°C

V

1000

800

600

400

Collector current: Ic [A]

200

0

0 400 800 1200 1600

Collector-Emitter voltage: VCE [V]

(Main terminals)

Err

4

1MBI400V-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Forward Current vs. Forward Voltage (typ.)

chip

1000

800

Tj=25°C

600

400

Forward current: IF [A]

200

150°C

125°C

0

0 1 2 3

Forward on voltage: V

F [V]

Reverse Recovery Characteristics (typ.)

Vcc=600V, VGE=±15V, RG=1.8Ω, Tj=150°C

10000

Reverse recovery current: Irr [A]

10000

1000

100

Reverse recovery time: trr [nsec]

10

***

Reverse Recovery Characteristics (typ.)

Vcc=600V, V

0 200 400 600 800 1000

GE=±15V, RG=1.8Ω, Tj=125°C

Irr

trr

Forward current: I

F [A]

Transient Thermal Resistance (max.)

1

1000

0.1

Irr

trr

100

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

10

0 200 400 600 800 1000

Forward current: I

F [A]

0.01

Thermal resistanse: Rth(j-c) [°C/W]

0.001

ô [sec] 0.0023 0.0301 0.0598 0.0708

Rth IGBT 0.00665 0.01686 0.02382 0.01467

[°C/W] FWD 0.01180 0.02991 0.04226 0.02603

0.001 0.01 0.1 1

Pulse Width : Pw [sec]

FWD

IGBT

FWD safe operating area (max.)

Tj=150°C

1000

800

600

400

Pmax=400kW

200

Reverse recovery current: Irr [A]

0

0 500 1000 1500

Collector-Emitter voltage: VCE [V]

(Main terminals)

5

1MBI400V-120-50

7

Outline Drawings(Unit:mm)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

Weight: 370g (typ.)

6

1MBI400V-120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade sec ret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric C o., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property r ights which may arise from the use of the applications descr ibed herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safet y measures to prevent
the equipment from causing a physic al injury, re, or other problem if any of the products become fault y. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electr ical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obt ain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incor porated in the equipment
becomes faulty.

• Transportation equipment (mounted on c ars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996 -2014 by Fuji Electric Co., Ltd. All rights reser ved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injur y caused by any use of the products not in accordance with instructions
set forth herein.

7

Technical Information

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Information

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2

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3

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2

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9

Contact

10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

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2015-10