Fuji Electric 1MBI400U4-120 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT MODULE

1MBI400U4-120

MS5F 6039

Feb. 15 ’05

Feb. 15 ’05

S.Miyashita

T.Miyasaka

K.Yamada

Y.Seki

MS5F6039

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13

H04-004-07b

R e v i s e d R e c o r d s

Date

Feb.-15 -’05 K. Yamada

Classi-

fication

Enactment

Ind. Content

Applied

date

Issued

date

Drawn Checked Checked Approved

T.Miyasaka

Y.Seki

MS5F6039

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1. Outline Drawing ( Unit : mm )

1MBI400U4-120

2. Equivalent circuit

MS5F6039

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Storage temperature

Tj=25

o

C

Lead resistance,

Tj=125

o

C

VF

Tj=25

o

C

Tj=125

o

C

VF

Characteri st ics

Tc=25

o

C

Tc=80

o

C

Collector-Emitter voltage

4. Electrical ch aracteristics ( at Tj = 25

o

C un less otherwise specifi ed )

Isolation

Gate-Emitter

Gate-Emitter

Tj=125

o

C

Tj=125

o

C

Tj=25

o

C

Tj=25

o

C

Tc=80

o

C

Tc=25

o

C

3. Absolute Maximu m Rating s ( at Tc= 25

o

C un less otherwise specifi ed )

Maxim um

VCE(sat)

VCE(sat)

Gate-Emitter voltage

Items

Symbol s

VCES 1200
VGES

Conditi ons

Ic Continuous

Collector current

Icp 1ms

-Ic

-Ic pulse
Collector Power Dissipation 1 device
Junction temperature

Pc
Tj

1ms

Tstg

voltage

Screw
Torque

between terminal and copper base (*1)

Viso

Mounting (*2)
Terminals (*3) 4.5

-

Terminals (*4)

AC : 1min. 2500

(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
(*4) Recommendable Value : Terminals 1.3 to 1.7 Nm (M4)

Rati ngs

600
400

1200

800
400

800
2155
+150

-40 to +125

3.5

1.7

Units

V
V±20

A

W

o

C

VAC

N m

Items

Zero gate voltage
collector current

leakage current

threshold voltage

ICES

IGES

VGE(th)

VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=400mA
Ic=400A

Collector-Emitter

(terminal)

VGE=15V

saturation voltage

(chip)

Input capacitance

Cies

VCE=10V,VGE=0V,f=1MHz

ton Vcc=600V - 0.32 1.20

Turn-on time

Turn-off time

tr Ic=400A - 0.10
tr(i)

VGE=±15V
toff RG=1.5Ω ­tf - 0.07 0.30

IF=400A

Forward on voltage

(terminal)

VGE=0V

(chip)

Reverse recovery time

terminal-chip (*5)

trr us

R lead

IF=400A -

(*5) Biggest internal terminal resistance among arm.

Condit ionsSymbols

min.

- -

typ. max.

4.0

- - 800

4.5 6.5 8.5

Units

mA

nA

V

- 2.10 2.25

-

- 1.90

-

-

2.30 -

2.05

2.10 ­45 -

V

nF

0.60

- 0.03

-

us

0.41 1.00

-

1.85

- 1.95 -

- 1.65 1.80

-

1.75 -

2.00

V

- 0.35

-

0.40 - mΩ

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Lo go of product ion

Lo t.No.

Place of manufacturing (code)

400A 1200V

Contact Thermal resistance

6. Indi cation on module

5. Thermal resi stance characteristics

Items Symbols Condit ions Units

min.

typ.

max.

Characteri st ics

7. Appl icable category

8. Sto rage and transport ation notes

The module should be stored at a standard temperature of 5 to 35

o

C and humidity of 45 to 75% .

Display on the packing box

- Logo of production

- Type name

- Lot No

9. Definitions o f switching time

- Products quantity in a packing box

10. Packin g and Labeling

Thermal resistance(1device)

(1 device) (*6)

Rth(j-c)

IGBT ­FWD - -

Rth(c-f) with Thermal Compound

-

-

0.0125

0.058

(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.

1MBI400U4-120

This specification is applied to IGBT-Module named 1MBI400U4-120.

•

0.10

-

o

C/W

Store modules in a place with few temperature changes in order to avoid condensation on the

•

module surface.

Avoid exposure to corrosive gases and dust.

•

Avoid excessive external force on the module.

•

Store modules with unprocessed terminals.

•

Do not drop or otherwise shock the modules when transporting.

•

90%

～

～

0V

V

L

Vcc

R

G

V

GE

V

CE

Ic

GE

V

CE

Ic

0V
0A

t

r r

I

r r

Ic

～

90%

10%

10% 10%

t

r( i )

t

r

t

o n

～

V

CE

～

～

t

o f f

0V

90%

t

f

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11. Reliability test results

Reli ability Test Items

100m/s

2

5000m/s

2

Low temp. -40

5

High temp. 125

5

RT 5 ~ 35

6

Thermal Shock

5

( 0 : 1 )

Test
cate-

Test items Test methods and conditions

gories

1 Terminal Strength Pull force : 40N

(Pull test) Test time : 10±1 sec.

2 Mounting Strength Screw torque : 1.3 ~ 1.7 N･m (M4)

2.5 ~ 3.5 N･m (M5)

3.5 ~ 4.5 N･m (M6)

Test time : 10±1 sec.

3 Vibration Range of frequency : 10 ~ 500Hz

Sweeping time : 15 min.
Acceleration :

Mechanical Tests

Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)

4 Shock Maximum acceleration :

Pulse width : 1.0msec.
Direction : Each X,Y,Z axis
Test time : 3 times/direction

1 High Temperature Storage temp. : 125±5 ℃

Storage Test duration : 1000hr.

2 Low Temperature Storage temp. : -40±5 ℃

Storage Test duration : 1000hr.

3 Temperature Storage temp. : 85±2 ℃

Humidity Relative humidity : 85±5%
Storage Test duration : 1000hr.

4 Unsaturated Test temp. : 120±2 ℃

Pressurized Vapor Test humidity : 85±5%

Test duration : 96hr.

5 Temperature

Cycle Test temp. :

±

℃

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 401

Ⅰ

Method

Test Method 402

Ⅱ

method

Test Method 403

Reference 1

Condition code B

Test Method 404

Condition code B

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

Number

of

sample

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

Accept­ance
number

±

℃

℃

Environment Tests

Dwell time : High ~ RT ~ Low ~ RT

1hr. 0.5hr. 1hr. 0.5hr.

Number of cycles : 100 cycles

Test Method 307

Ⅰ

method

Condition code A

Test temp. :

+0

High temp. 100 -5

+5

℃

Low temp. 0 -0 ℃
Used liquid : Water with ice and boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles

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Reli ability Test Items

Test

Ta = 125

(Tj

150 ℃)

Ta = 125

(Tj

150 ℃)

2 oC

5%



Tj=100±5 deg

Tj ≦

150 ℃, Ta=25±5

cate­gories

Test items Test methods and conditions

1 High temperature

Reverse Bias Test temp. :

Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

Test duration : 1000hr.

2 High temperature

Bias (for gate) Test temp. :

Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E

Endurance TestsEndurance Tests

Test duration : 1000hr.

3 Temperature

Humidity Bias Test temp. :85±

Relative humidity :85±
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E

4 Intermitted ON time : 2 sec.

Operating Life OFF time : 18 sec.
(Power cycle) Test temp. :
( for IGBT )

Test duration : 1000hr.

Number of cycles : 15000 cycles

≦

VGE = 0V

≦

VCE = 0V

VGE = 0V

±5 ℃

±5 ℃

℃

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Test Method 101

Test Method 101

Test Method 102

Condition code C

Test Method 106

Number

of

sample

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

5 ( 0 : 1 )

Accept­ance
number

Fail ure Criteria

Item Characteristic Symbol Failure criteria Unit Note

Lower limit Upper limit

Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A

Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT  VGE - USL×1.2 mV
resistance or  VCE

FWD  VF - USL×1.2 mV

Isolation voltage Viso Broken insulation ­Visual Visual inspection
inspection Peeling - The visual sample -

Plating

and the others

LSL : Lower specified limit.
USL : Upper specified limit.

Note :

Each parameter measurement read-outs shall be made after stabilizing the components

Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.

at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component

And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.

shall be made wipe or dry completely before the measurement.

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Reliability Test Results

Test
cate­gorie

s

Test items

Reference

norms

EIAJ ED-4701

(Aug.-2001 edition)

Number

of test

sample

Number

of

failure

sample

1 Terminal Strength

(Pull test)

2 Mounting Strength

Test Method 401

MethodⅠ

Test Method 402

methodⅡ

3 Vibration Test Method 403 5 0

Condition code B

4 Shock

Mechanical Tests

1 High Temperature Storage

2 Low Temperature Storage

3 Temperature Humidity

Storage

4 Unsaturated

Pressurized Vapor

5 Temperature Cycle

Test Method 404

Condition code B

Test Method 201

Test Method 202

Test Method 103

Test code C

Test Method 103

Test code E

Test Method 105

Environment Tests

6 Thermal Shock

1 High temperature Reverse Bias

Test Method 307

method Ⅰ

Condition code A

Test Method 101

5 0

5 0

5 0

5 0

5 0

5 *

5 0

5 0

5 0

5 *

2 High temperature Bias

( for gate )

3 Temperature Humidity Bias

Endurance Tests

4 Intermitted Operating Life

(Power cycling)
( for IGBT )

Test Method 101

Test Method 102

Condition code C

Test Method 106

MS5F6039

5 0

5 *

5 0

* under confirmation

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H04-004-03a

VGE=0V, f=1MHz, Tj=25

o

C

Collector current vs. Collector-Emitter voltage (typ.)

Collector- Emitter voltage : VCE[ 200V/div ]

Gate-Emitter voltage : VGE [ 5V/div ]

0

Tj=25oC / chip

1000

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125oC / chip

1000

800

600

400

Collector current : Ic [ A ]

200

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emitter voltage (typ.)

VGE=15V / chip

1000

800

600

Tj=25oC

12V15VVGE=20V

Tj=125oC

10V

8V

800

600

400

Collector current : Ic [A ]

200

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [ V ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Tj=25oC / chip

10

8

6

12V15VVGE=20V

10V

8V

Collector current : Ic [ A ]

Capacitance : Cies, Coes, Cres [ nF ]

400

200

0

0 1 2 3 4 5

Collector-Emitter voltage : VCE [ V ]

100.0

10.0

1.0
0 10 20 30

Collector-Emitter voltage : VCE [ V ]

Cies

Cres

Coes

4

2

Collector-Emitter voltage : VCE [ V ]

0

5 10 15 20 25

Gate-Emitter voltage : VGE [ V ]

Dynamic Gate charge (typ.)Capacitance vs. Collector-Emitter voltage (typ.)

Vcc=600V, Ic=400A,

0 500 1000 1500 2000

Gate charge : Qg [ nC ]

Tj=25oC

VGE

VCE

Ic=800A
Ic=400A
Ic=200A

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Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Vcc=600V, VGE=±15V, RG=1.5Ω,

10000

Tj=25oC

Vcc=600V, VGE=±15V, RG=1.5Ω,

10000

Tj=125oC

Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

1000

toff

ton

100

10

0 200 400 600 800

Collector current : Ic [ A ]

Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=400A, VGE=±15V,

10000

1000

100

10

0.1 1.0 10.0 100.0
Gate resistance : RG [ Ω ]

Tj=25oC

ton

toff

tr

tf

1000

tr

100

tf

Switching time : ton, tr, toff, tf [ nsec ]

10

0 200 400 600 800

Collector current : Ic [ A ]

Switching loss vs. Collector current (typ.)

Vcc=600V, VGE=±15V, RG=1.5Ω

70

60

50

40

30

20

10

0

0 100 200 300 400 500 600 700 800

Collector current : Ic [ A ]

ton
toff

tr

tf

Eoff(125oC)

Eoff(25oC)
Err(125oC)

Eon(125oC)
Err(25oC)

Eon(25oC)

Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)

Vcc=600V, Ic=400A, VGE=±15V,

70

60

50

40

30

20

10

0

0.1 1.0 10.0 100.0
Gate resistance : RG [ Ω ]

Tj=125oC Tj <= 125oC

Eoff

Eon

Err

+VGE=15V, -VGE <= 15V, RG >= 1.5Ω,

1000

800

600

400

Collector current : Ic [ A ]

200

0

0 400 800 1200 1600

Collector-Emitter voltage : VCE [ V ]

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Forward current : IF [ A ]

Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)

chip Vcc=600V, VGE=±15V, RG=1.5Ω

1000

800

Tj=25oC

Tj=125oC

600

400

200

0

0 1 2 3 4

Forward on voltage : VF [ V ]

Transient thermal resistance (max.)

1.000

1000

Irr(125oC)
Irr(25oC)

trr(125oC)

100

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

10

0 200 400 600 800

Forward current : IF [ A ]

trr(25oC)

C/W ]

o

0.100

0.010

Thermal resistance : Rth(j-c) [

0.001

0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]

FWD

IGBT

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Warnings

- This product shall be used within its absolute maximum rating (voltage, current, and temperature).　This product

roughness within 10um. Also keep the tightening torque within the limits of this specification.

Too large convex

of cooling fin

may cause isolation breakdown and this may lead to a critical accident.

On the other hand, too

100mm

100um

10um

may be broken in case of using beyond the ratings.

製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。

- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.

万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。

Use this product after realizing enough working on environment and considering of product's reliability life.

­This product may be broken before target life of the system in case of using beyond the product's reliability life.

製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。

If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,

­sulfurous acid gas), the product's performance and appearance can not be ensured easily.

酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。

Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is

­classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.

本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる
場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際
の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。

Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor

­contact problem.

主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合があります。

Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the

-

large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.

冷却フィンはネジ取り付け位置間で平坦度を
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フィンの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。

In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the

­thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)

素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)

- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.

ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。

If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some

­countermeasures against static electricity.

制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。

で

以下、表面の粗さは

以下にして下さい。　過大な凸反り

MS5F6039

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Technology

products. This specification never ensure to enforce the industrial property and other rights, nor license the

Warnings

Never add the excessive mechanical stress to the main or control terminals when the product is applied to

でご

使用下

さい

。

­equipments. The module structure may be broken.

素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。

In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent

­this malfunction. (Recommended value : -VGE = -15V)

逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。　（推奨値 : -VGE = -15V)

- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.

ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。

- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.

VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内

Cautions

- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.

富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。

- The application examples described in this specification only explain typical ones that used the Fuji Electric Device

enforcement rights.

本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。

- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,　please apply after confirmation
of this product to be satisfied about system construction and required reliability.

本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。

If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.

MS5F6039

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H04-004-03a