1MBI300S-120
1200V / 300A 1 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector Continuous Tc=25°C IC
current Tc=80°C
1ms Tc=25°C IC pulse
Tc=80°C
-IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage *1 Vis
Screw torque Mounting *2
Terminals *2
Terminals *2
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4)
Rating
1200
±20
400
300
800
600
300
600
2100
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
1.7
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbol Characteristics Conditions Unit
Min. Typ. Max.
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
trr
– – 4.0
– – 0.8
5.5 7.2 8.5
– 2.3 2.6
– 2.8 –
– 36000 –
– 7500 –
– 6600 –
– 0.35 1.2
– 0.25 0.6
– 0.1 –
– 0.45 1.0
– 0.08 0.3
– 2.7 3.5
– 2.4 –
– – 0.35
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
IGBT Module
Equivalent Circuit Schematic
CE
G E
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
Tc=25° C VGE=15V, IC=300A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=300A
VGE=±15V
RG=2.7 ohm
Tj=25°C IF=300A, VGE=0V
Tj=125°C
IF=300A
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Rth(j-c)
Rth(j-c)
Rth(c-f)*4
– – 0.06
– – 0.17
– 0.0125 –
IGBT
FWD
the base to cooling fin
°C/W
°C/W
°C/W
1MBI300S-120
Characteristics
IGBT Module
Collector current vs. Collector-Emiiter voltage
700
600
500
400
300
200
Collector current : Ic [ A ]
100
0
012345
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emiiter voltage
700
600
500
Tj= 25°C (typ.)
VGE= 20V
VGE=15V (typ.)
Tj= 25°C
12V15V
10V
8V
Tj= 125°C
Collector current vs. Collector-Emiiter voltage
700
600
500
400
300
200
Collector current : Ic [ A ]
100
0
012345
Collector-Emiiter voltage vs. Gate-Emitter voltage
10
8
Tj= 125°C (typ.)
VGE= 20V
Collector - Emitter voltage : VCE [ V ]
Tj= 25°C (typ.)
15V
12V
10V
8V
400
300
200
Collector current : Ic [ A ]
100
0
012345
Collector - Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emiiter voltage (typ.)
100000
10000
5000
VGE=0V, f= 1MHz, Tj= 25°C
Cies
6
4
Ic= 600A
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
1000
800
600
400
Vcc=600V, Ic=300A, Tj= 25°C
Ic= 300A
Ic=150A
25
20
15
10
Capacitance : Cies, Coes, Cres [ pF ]
1000
0 5 10 15 20 25 30 35
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
200
Collector - Emitter voltage : VCE [ V ]
0
0 1000 2000 3000
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
5
0
1MBI300S-120
IGBT Module
Switching time vs. Collector current (typ.)
1000
500
100
Switching time : ton, tr, toff, tf [ nsec ]
50
5000
1000
Vcc=600V, VGE=+-15V, Rg= 2.7ohm, Tj= 25°C
toff
ton
tr
tf
0 100 200 300 400 500
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=+-15V, Tj= 25°C
ton
toff
tr
Switching time vs. Collector current (typ.)
1000
Switching time : ton, tr, toff, tf [ nsec ]
Vcc=600V, VGE=+-15V, Rg= 2.7ohm, Tj= 125°C
toff
500
ton
tr
tf
100
50
0 100 200 300 400 500
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
80
60
Vcc=600V, VGE=+-15V, Rg=2.7ohm
Eon(125°C)
Eon(25°C)
500
Switching time : ton, tr, toff, tf [ nsec ]
100
50
11050
Gate resistance : Rg [ ohm ]
Switching loss vs. Gate resistance (typ.)
200
160
120
80
40
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
Vcc=600V, Ic=300A, VGE=+-15V, Tj= 125°C
11050
Gate resistance : Rg [ ohm ]
tf
Eon
Eoff
Err
40
20
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
700
600
500
400
300
200
Collector current : Ic [ A ]
100
0
Eoff(125°C)
Eoff(25°C)
Err(125°C)
Err(25°C)
0 200 400 600
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=2.7ohm, Tj<=125°C
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
1MBI300S-120
IGBT Module
Forward current vs. Forward on voltage (typ.)
500
Tj=125°C
400
300
200
Forward current : IF [ A ]
100
0
01234
Forward on voltage : VF [ V ]
Transient thermal resistance
0.5
Tj=25°C
FWD
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=+-15V, Rg=2.7ohm
500
Irr(125°C)
trr(125°C)
Irr(25°C)
100
trr(25°C)
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
10
0 100 200 300 400 500
Forward current : IF [ A ]
0.1
0.05
0.01
Thermal resistanse : Rth(j-c) [ °C/W ]
1E-3
0.001 0.01 0.1 1
Pulse width : Pw [ sec ]
Outline Drawings, mm
IGBT
mass : 380g
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