Fuji Electric 1MBI300S-120 Data Sheet

1MBI300S-120

1200V / 300A 1 in one-package

Features

· High speed switching

· Voltage drive

· Low inductance module structure

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Item Symbol

Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector Continuous Tc=25°C IC
current Tc=80°C

1ms Tc=25°C IC pulse
Tc=80°C

-IC

1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage *1 Vis
Screw torque Mounting *2

Terminals *2

Terminals *2
*1 : Aii terminals should be connected together when isolation test will be done

*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4)

Rating

1200

±20
400
300
800
600
300

600
2100
+150

-40 to +125
AC 2500 (1min.)

3.5

4.5

1.7

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Symbol Characteristics Conditions Unit
Min. Typ. Max.

ICES
IGES
VGE(th)
VCE(sat)

Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF

trr

– – 4.0
– – 0.8

5.5 7.2 8.5
– 2.3 2.6
– 2.8 –
– 36000 –
– 7500 –
– 6600 –
– 0.35 1.2
– 0.25 0.6
– 0.1 –
– 0.45 1.0
– 0.08 0.3
– 2.7 3.5
– 2.4 –
– – 0.35

Unit

V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m

IGBT Module

Equivalent Circuit Schematic

CE

G E

VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=300mA
Tc=25° C VGE=15V, IC=300A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=300A
VGE=±15V
RG=2.7 ohm

Tj=25°C IF=300A, VGE=0V
Tj=125°C
IF=300A

mA
µA
V
V

pF

µs

V

µs

Thermal resistance characteristics

Item Symbol Characteristics Conditions Unit
Min. Typ. Max.

Thermal resistance

*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound

Rth(j-c)
Rth(j-c)
Rth(c-f)*4

– – 0.06
– – 0.17
– 0.0125 –

IGBT
FWD
the base to cooling fin

°C/W
°C/W
°C/W

1MBI300S-120

Characteristics

IGBT Module

Collector current vs. Collector-Emiiter voltage

700

600

500

400

300

200

Collector current : Ic [ A ]

100

0

012345

Collector - Emitter voltage : VCE [ V ]

Collector current vs. Collector-Emiiter voltage

700

600

500

Tj= 25°C (typ.)

VGE= 20V

VGE=15V (typ.)

Tj= 25°C

12V15V

10V

8V

Tj= 125°C

Collector current vs. Collector-Emiiter voltage

700

600

500

400

300

200

Collector current : Ic [ A ]

100

0

012345

Collector-Emiiter voltage vs. Gate-Emitter voltage

10

8

Tj= 125°C (typ.)

VGE= 20V

Collector - Emitter voltage : VCE [ V ]

Tj= 25°C (typ.)

15V

12V

10V

8V

400

300

200

Collector current : Ic [ A ]

100

0

012345

Collector - Emitter voltage : VCE [ V ]

Capacitance vs. Collector-Emiiter voltage (typ.)

100000

10000

5000

VGE=0V, f= 1MHz, Tj= 25°C

Cies

6

4

Ic= 600A

2

Collector - Emitter voltage : VCE [ V ]

0

5 10152025

Gate - Emitter voltage : VGE [ V ]

Dynamic Gate charge (typ.)

1000

800

600

400

Vcc=600V, Ic=300A, Tj= 25°C

Ic= 300A
Ic=150A

25

20

15

10

Capacitance : Cies, Coes, Cres [ pF ]

1000

0 5 10 15 20 25 30 35

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

200

Collector - Emitter voltage : VCE [ V ]

0

0 1000 2000 3000

Gate charge : Qg [ nC ]

Gate - Emitter voltage : VGE [ V ]

5

0