Page 1
1.BASE
2.COLLECTOR
3.EMITTER
3
2
1
Features
TIP120,121,122 Darlington TRANSISTOR (NPN)
TIP125,126,127 Darlington TRANSISTOR (PNP)
Medium Power Complementary silicon transistors
TIP120-TIP127
TO-220 Darlington Transistor
TO-220
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T
Symbol Parameter TIP120
V
Collector-Base Voltage 60 80 100 V
CBO
V
Collector-Emitter Voltage 60 80 100 V
CEO
V
Emitter-Base Voltage 5 V
EBO
=25℃ unless otherwise noted)
A
TIP125
TIP121
TIP126
TIP122
TIP127
Units
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 2 W
R
Thermal Resistance Junction to Ambient 62.5 ℃/W
θJA
R
Thermal Resistance Junction to Case
θJc
TJ Junction Temperature 150
T
Storage Temperature -55to+150
stg
1.92
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage TIP120,TIP125
TIP121,TIP126
V(BR)
CBOIC
= 1mA,IE=0
TIP122,TIP127
Collector-emitter breakdown voltage TIP120,TIP125
TIP121,TIP126
V
CEO
(SUS) I
= 30mA,IB=0
C
TIP122,TIP127
Collector cut-off current TIP120,TIP125
TIP121,TIP126
I
CBO
TIP122,TIP127
Collector cut-off current TIP120,TIP125
TIP121,TIP126
I
CEO
TIP122,TIP127
Emitter cut-off current I
DC current gain
VEB=5 V, IC=0 2 mA
EBO
h
VCE= 3V, IC=0.5A 1000
FE(1)
h
VCE= 3V, IC=3 A 1000
FE(2)
Collector-emitter saturation voltage VCE(sat)
= 60 V, IE=0
V
CB
V
= 80 V, IE=0
CB
V
= 100V, IE=0
CB
=30 V, IB=0
V
CE
V
=40 V, IB=0
CE
V
=50 V, IB=0
CE
I
=3A,IB=12mA
C
I
=5 A,IB=20mA
C
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V
Output Capacitance TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Cob V
=10V, IE=0,f=0.1MHz
CB
60
80
V
100
60
80
V
100
0.2 mA
0.5 mA
2
4
300
200
pF
V
Page 2
TIP120-TIP127
TO-220 Darlington Transistor
Typical Characteristics
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