Page 1
TIP120 ... TIP122
5.7
TIP120 ... TIP122
NPN
Version 2006-10-17
±0.2
10
3.8
4
Typ e
Typ
321
13.2 1
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Maximum ratings (T
Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren
Max. power dissipation with cooling
NPN
65 W
Max. Verlustleistung mit Kühlung
3
Collector current
Kollektorstrom
1.5
0.9
2.54
Plastic case
3.4
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
TO-220AB
2.2 g
Standard packaging in tubes
Standard Lieferform in Stangen
= 25°C) Grenzwerte (TA = 25°C)
A
TIP120 TIP121 TIP122
5 A
Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open V
Collector-Base-voltage – Kollektor-Basis-Spg. E open V
Emitter-Base-voltage – Emitter-Basis-Spannung C open V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
T
= 25°C
A
T
= 25°C
C
Collector current – Kollektorstrom (dc) I
Peak Collector current – Kollektor-Spitzenstrom I
Base current – Basisstrom (dc) I
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (T
DC current gain – Kollektor-Basis-Stromverhältnis
I
= 0.5 A, VCE = 3 V
C
I
= 3 A, VCE = 3 V
C
= 25°C) Kennwerte (Tj = 25°C)
j
2
)
CEO
CBO
EBO
P
tot
P
tot
C
CM
B
T
j
T
S
60 V 80 V 100 V
60 V 80 V 100 V
5 V
2 W 1)
65 W
5 A
8 A
120 mA
-55...+150°C
-55…+150°C
Min. Typ. Max.
h
FE
h
FE
1000
1000
–
–
–
–
Small signal current gain – Kleinsignal-Stromverstärkung
I
= 3 A, VCE = 4 V, f = 1 MHz h
C
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses t
© Diotec Semiconductor AG http://www.diotec.com/
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
p
fe
4
1
Page 2
TIP120 ... TIP122
T1T
Characteristics (T
= 25°C) Kennwerte (Tj = 25°C)
j
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg.
I
= 3 A, IB = 12 mA
C
I
= 5 A, IB = 20 mA
C
Base-Emitter voltage – Basis-Emitter-Spannung
I
= 3 A, VCE = 3 V V
C
2
)
V
V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
V
= 30 V, (B open)
CE
V
= 40 V, (B open)
CE
V
= 50 V, (B open)
CE
TIP120
TIP121
TIP122
I
I
I
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
= 60 V, (E open)
CB
V
= 80 V, (E open)
CB
V
= 100 V, (E open)
CB
TIP120
TIP121
TIP122
I
I
I
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
= 10 V, IE = ie = 0, f = 100 kHz C
CB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
CEsat
CEsat
BE
CEO
CEO
CEO
CBO
CBO
CBO
CB0
thA
Min. Typ. Max.
2
)
–
–
–
–
2 V
4 V
– – 2.5 V
–
–
–
–
–
–
–
–
–
–
–
–
500 nA
500 nA
500 nA
200 nA
200 nA
200 nA
– – 200 pF
< 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2
Equivalent Circuit – Ersatzschaltbild
EBC
R
M4
thC
< 3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
TIP125 ... TIP127
B1
T2
T1
C2
E2
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 http://www.diotec.com/ © Diotec Semiconductor AG
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