Page 1
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA
TIC216 series
TIC216 Series(6A TRIACS)
6A RMS
TO-220 PACKAGE
400V to 800V Off-State Voltage
Max I
AABBSSOOLLUUTTEE RRAATTIINNGG
Symbol Parameter Value Units
V
I
T(RMS)
of 5mA(Quadrant 1)
GT
Repetitive peak off-state voltage
DRM
Continuous on-state current at(or below) 70℃
case temperature
TIC216D
TIC216M
TIC216S
TIC216N
400
600
700
V
800
6 A
I
Peak on-state surge current full-sine-wave 60 A
TSM
I
Peak on-state surge current half-sine-wave 70 A
TSM
IGM Peak gate current
PGM
P
G(AV)
Peak gate power dissipation(pulse width≤200μs)
Average gate power dissipation 0.9 W
TC Operating case temperature range
T
Storage temperature
stg
±1
A
2.2 W
-40～110 ℃
-40～125 ℃
Page 2
®
Jinglin
Qidong Jilai E lectronics Co., Ltd.
SEMICONDUCTOR TECHNICAL DATA TIC216 series
TTHHEERRMMAALL RREESSIISSTTAANNCCEE
Symbol Parameter Value Unit
Rth(j-c) Junction to case thermal resistance 2.5
Rtj(j-a) Junction to free air thermal resistance 62.5
5
EELLEECCTTRRIICCAALL CCHHAARRAACCTTEERRIISSTTIICCSS aatt 225
℃
℃
ccaassee tteemmppeerraattuurree
℃/W
℃/W
Symbol Testing conditions Min. Typ. Max. Unit
V
IGT
=+12V, RL=10Ω, t
supply
V
=+12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
＞20μs
p(g)
＞20μs
p(g)
＞20μs
p(g)
＞20μs
p(g)
- - 5
- - -5
mA
- - -5
- - 10
VGT
IH
VTM
I
DRM
dv/dt
V
=+12V, RL=10Ω, t
supply
V
=+12V, RL=10Ω, t
supply
＞20μs
p(g)
＞20μs
p(g)
- - 2.2
- - -2.2
V
V
=-12V, RL=10Ω, t
supply
V
=-12V, RL=10Ω, t
supply
V
=+12V, IG=0, Initiating IT=100mA
supply
＞20μs
p(g)
＞20μs
p(g)
- - -2.2
- - 3
- - 30
mA
V
=-12V, IG=0, Initiating IT=-100mA
supply
ITM=±8.4A， I
=ratedV
V
V
DRM
D
=rated V
DRM
, IG=0, T
, I
DRM
=50mA
G
TRM
=110℃
C
=±3.5A, T
=110℃
C
- - -30
- -
- -
-
±50
±1.7
±2
-
mA
V/μs
V
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