FREI SD 667 Datasheet

r

2SD667, 2SD667A

Silicon NPN Epitaxial

Application

• Low frequency power amplifier

• Complementary pair with 2SB647/A

Outline

RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)

REJ03G0769-0200

(Previous ADE-208-1137)

Rev.2.00

Aug.10.2005

1. Emitter

2. Collecto

3. Base

3

2

1

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol 2SD667 2SD667A Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current IC 1 1 A
Collector peak current i
Collector power dissipation PC 0.9 0.9 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C

120 120 V

CBO

80 100 V

CEO

5 5 V

EBO

2 2 A

C(peak)

Rev.2.00 Aug 10, 2005 page 1 of 5

2SD667, 2SD667A

Electrical Characteristics

2SD667 2SD667A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

V

breakdown voltage
Collector to emitter

V

breakdown voltage
Emitter to base

V

breakdown voltage
Collector cutoff current I
DC current transfer ratio h

h

Collector to emitter
saturation voltage

Base to emitter voltage VBE — — 1.5 — — 1.5 V

Gain bandwidth product fT — 140 — — 140 — MHz

Collector output
capacitance

Notes: 1. The 2SD667 and 2SD667A are grouped by h

2. Pulse test

B C D

2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200

120 — — 120 — — V IC = 10 µA, IE = 0

(BR)CBO

80 — — 100 — — V IC = 1 mA, RBE = ∞

(BR)CEO

5 — — 5 — — V IE = 10 µA, IC = 0

(BR)EBO

— — 10 — — 10 µA VCB = 100 V, IE = 0

CBO

*1 60 — 320 60 — 200

FE1

30 — — 30 — —

FE2

— — 1 — — 1 V

V

CE(sat)

Cob — 12 — — 12 — pF

V

CE

= 150 mA*2

I

C

V

CE

= 500 mA*2

I

C

= 500 mA,

I

C

= 50 mA*2

I

B

V

CE

= 150 mA*2

I

C

V

CE

= 150 mA*2

I

C

V

CB

f = 1 MHz

as follows.

FE1

(Ta = 25°C)

= 5 V,

= 5 V,

= 5 V,

= 5 V,

= 10 V, IE = 0,

Rev.2.00 Aug 10, 2005 page 2 of 5

2SD667, 2SD667A

Main Characteristics

Maximum Collector Dissipation Curve

1.2

(W)

C

0.8

0.4

Collector Power Dissipation P

0

50 100

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

500

VCE = 5 V

200

100

(mA)

C

50

20

10

5

Collector Current I

2

1

0 0.2 0.6 1.00.4

Ta = 75°C

25

–25

Base to Emitter Voltage V

0.8

BE

(V)

150

Typical Output Characteristics

1.0

0.8

(A)

C

0.6

0.4

0.2

Collector Current I

35

30

25

20

15

10

5

2

P

C

= 0.9 W

1

0.5mA

IB = 0

02 6 1048

Collector to Emitter Voltage V

CE

DC Current Transfer Ratio

vs. Collector Current

300

250

200

150

100

50

VCE = 5 V

Ta = 75

25

–25

C

°

FE

DC Current Transfer Ratio h

0

1 10 100 1,000330

Collector Current I

(mA)

C

300

(V)

Saturation Voltage

vs. Collector Current

(V)

CE(sat)

Collector to Emitter Saturation Voltage V

(V)

0.6

0.5

0.4

0.3

0.2

0.1

1.2

IC = 10 I
Pulse

V

BE(sat)

V

CE(sat)

B

Ta = –25

BE(sat)

1.0

0.8

0.6

0.4

0.2

0

0

1 10 100 1,000330

Base to Emitter Saturation Voltage V

Collector Current IC (mA)

Rev.2.00 Aug 10, 2005 page 3 of 5

25

75

C

°

75

Ta = –25

25

300

Gain Bandwidth Product

vs. Collector Current

240

VCE = 5 V

200

(MHz)

T

160

120

80

C

°

40

Gain Bandwidth Product f

0

10 30 100 300

Collector Current IC (mA)

1,000

2SD667, 2SD667A

Collector Output Capacitance vs.

Collector to Base Voltage

200

(pF)

ob

Collector Output Capacitance C

f = 1 MHz
I

100

= 0

E

50

20

10

5

2

1 5 20 100210

50

Collector to Base Voltage V

CB

(V)

Rev.2.00 Aug 10, 2005 page 4 of 5

2SD667, 2SD667A

Package Dimensions

RENESAS CodeJEITA Package Code

PRSS0003DC-A TO-92 Mod / TO-92 ModV

0.65 ± 0.1

0.75 Max

0.60 Max

0.55 Max

Package Name

4.8 ± 0.4

1.27

2.54

MASS[Typ.]

0.35gSC-51

2.3 Max

0.7

8.0 ± 0.5

10.1 Min

Unit: mm

3.8 ± 0.4

0.5 Max

Ordering Information

Part Name Quantity Shipping Container

2SD667BTZ-E
2SD667CTZ-E
2SD667DTZ-E
2SD667ABTZ-E
2SD667ACTZ-E

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

2500 Hold Box, Radial Taping

Rev.2.00 Aug 10, 2005 page 5 of 5

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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