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SEMICONDUCTOR
KTC3199
TECHNICAL DATA
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION.
FEATURES
ᴌHigh DC Current Gain : hFE=70~700.
ᴌExcellent h
: h
FE
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTA1267.
MAXIMUM RATING (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Linearity
FE
(0.1mA)/hFE(2mA)=0.95(Typ.).
CHARACTERISTIC SYMBOL RATING UNIT
EPITAXIAL PLANAR NPN TRANSISTOR
B
A
DIM
MILLIMETERS
F
H
C
J
1
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
50 V
50 V
5 V
150 mA
-150 mA
400 mW
150
-55ᴕ150
ᴱ
ᴱ
L
EE
2
M
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
K
TO-92M
O
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
1.27
F
2.30
G
14.00 0.50
H
0.60 MAX
J
1.05
K
1.45
25
L
M
0.80
0.55 MAX
N
O 0.75
_
+
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
I
EBO
h
(Note) VCE=6V, IC=2mA
FE
V
CE(sat)
f
T
C
ob
Noise Figure NF
Note : hFEClassification O:70ᴕ140 , Y:120ᴕ240 , GR:200ᴕ400, BL:300~700.
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή
- - 0.1
- - 0.1
ỌA
ỌA
70 - 700
- 0.1 0.25 V
80 - - MHz
- 2.0 3.5 pF
- 1.0 10 dB
1996. 5. 30 1/3
Revision No : 1
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KTC3199
I - V
C
240
100
C
160
120
80
40
COLLECTOR CURRENT I (mA)
6.0
0
0
1234 567
5.0
3.0
I =0.2mA
B
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
3
1
0.5
0.3
CE(sat)
0.1
0.05
VOLTAGE V (V)
0.03
0.01
COLLECTOR-EMITTER SATURATION
0.3 1 3 10
Ta=100 C
25 C
-25 C
COLLECTOR CURRENT I (mA)
CE
2.0
0.5
1.0
0
COMMON
EMITTER
I /I =10
C
COMMON
EMITTER
Ta=25 C
CE
CB
h - I
C
FE
1k
COMMON
FE
500
300
100
Ta=100 C
Ta=25 C
Ta=-25 C
EMITTER
V =6V
CE
50
30
V =1V
CE
DC CURRENT GAIN h
10
BE(sat)
1 3 10 30
COLLECTOR CURRENT I (mA)
V - I
10
5
3
C
CBE(sat)
COMMON
EMITTER
I /I =10
Ta=25 C
3001000.30.1
BC
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
300100300.1
0.1 0.3 100 300
COLLECTOR CURRENT I (mA)
301031
C
f - I
ET
3k
T
1k
COMMON EMITTER
V =-10V
CE
Ta=25 C
500
300
3k
COMMON
1k
EMITTER
V =-6V
300
B
100
CE
30
100
50
30
10
TRANSITION FREQUENCY f (MHz)
1996. 5. 30 2/3
-0.1 -30 -100 -300
EMITTER CURRENT I (mA)
-10-3-1-0.3
E
Revision No : 1
BASE CURRENT I (µA)
0.3
10
3
1
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
I - V
BBE
C
C
25
100
=-25 C
Ta=
Ta=
Ta
BE
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500
400
300
C
P (mW)
200
100
KTC3199
Pc - Ta
COLLECTOR POWER DISSIPATION
0
0
25 50 100 125 150
AMBIENT TEMPERATURE Ta ( C)
75
1996. 5. 30 3/3
Revision No : 1
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