FREI SB 647 Datasheet

Page 1
r
2SB647, 2SB647A
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD667/A
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
REJ03G0648-0200
(Previous ADE-208-1025)
Rev.2.00
1. Emitter
2. Collecto
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol 2SB647 2SB647A Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current IC –1 –1 A Collector peak current i Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C
–120 –120 V
CBO
–80 –100 V
CEO
–5 –5 V
EBO
–2 –2 A
C(peak)
Rev.2.00 Aug 10, 2005 page 1 of 5
Page 2
2SB647, 2SB647A
Electrical Characteristics
2SB647 2SB647A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
V
breakdown voltage Collector to emitter
V
breakdown voltage Emitter to base
V
breakdown voltage Collector cutoff current I DC current transfer ratio h
h
Collector to emitter
V
saturation voltage Base to emitter voltage VBE — –1.5 –1.5 V
Gain bandwidth product fT — 140 140 MHz
Collector output
Cob — 20 20 pF
capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by h
2. Pulse test
B C D
2SB647 100 to 200 160 to 320 2SB647A 60 to 120 100 to 200
–120 — — –120 — — V IC = –10 µA, IE = 0
(BR)CBO
–80 — — –100 — — V IC = –1 mA, RBE =
(BR)CEO
–5 — — –5 — — V IE = –10 µA, IC = 0
(BR)EBO
–10 –10 µA VCB = –100 V, IE = 0
CBO
*1 60 — 320 60 — 200
FE1
30 — — 30 — —
FE2
— — –1 — — –1 V
CE(sat)
= –5 V,
V
CE
= –150 mA*2
I
C
= –5 V,
V
CE
= –500 mA*2
I
C
= –500 mA,
I
C
= –50 mA*2
I
B
= –5 V,
V
CE
= –150 mA*2
I
C
= –5 V,
V
CE
= –150 mA
I
C
= –10 V, IE = 0
V
CB
f = 1 MHz
as follows.
FE1
(Ta = 25°C)
Rev.2.00 Aug 10, 2005 page 2 of 5
Page 3
2SB647, 2SB647A
Main Characteristics
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
Collector power dissipation P
0 50 150100
Ambient Tmperature Ta (°C)
Typical Transfer Characteristics
–500
VCE = –5 V
–200
Pulse
–100
–50
(mA)
C
–20
–10
–5
–2
Collector current I
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
C
°
25
Ta = 75
–25
Base to Emitter Voltage VBE (V)
Typical Output Characteristics
1.0
0.8
(A)
C
0.6
0.4
0.2
Collector current I
0
120
100
80
60
40
30
20
10
5
2
P
= 0.9 W
C
2 1064 8
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
600
VCE = –5 V Pulse
FE
500
400
300
200
100
DC current transfer ratio h
0
–1 –3 –30 –300–10
Ta = 75°C
25
–25
Collector Current IC (mA)
1
0.5mA
IB = 0
–100 –1,000
Saturation Voltage
vs. Collector Current
–0.6
(V)
CE(sat)
–0.5
–0.4
–0.3
–0.2
–0.1
Collector to emitter saturation voltage V
–1.2
IC = 10 I
(V)
–1.0
BE(sat)
V
–0.8
–0.6
–0.4
–0.2
Base to emitter saturation voltage V
00
–1 –3 –10 –30 –100 –300
Pulse
BE(sat)
V
CE(sat)
B
Ta = –25°C
25
75
Collector Current I
Rev.2.00 Aug 10, 2005 page 3 of 5
Ta = 75°C
25
–25
(mA)
C
–1,000
Gain Bandwidth Product
vs. Collector Current
240
VCE = –5 V
200
(MHz)
T
160
120
80
40
Gain bandwidth product f
0
–10 –30 –100 –300 –1,000
Collector Current IC (mA)
Page 4
2SB647, 2SB647A
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
20
10
f = 1 MHz
= 0
I
E
5
2
–1
–2 –5 –10
(pF)
ob
Collector output capacitance C
–50–20 –100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
Page 5
2SB647, 2SB647A
Package Dimensions
RENESAS CodeJEITA Package Code
PRSS0003DC-A TO-92 Mod / TO-92 ModV
0.65 ± 0.1
0.75 Max
0.60 Max
0.55 Max
Package Name
4.8 ± 0.4
1.27
2.54
MASS[Typ.]
0.35gSC-51
2.3 Max
0.7
8.0 ± 0.5
10.1 Min
Unit: mm
3.8 ± 0.4
0.5 Max
Ordering Information
Part Name Quantity Shipping Container
2SB647CTZ-E 2SB647DTZ-E 2SB647ABTZ-E 2SB647ACTZ-E
Note: F or some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
2500 Hold Box, Radial Taping
Rev.2.00 Aug 10, 2005 page 5 of 5
Page 6
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