Page 1
INCHANGE Semiconductor
1
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base
Voltage
2SA1535
-150
V
2SA1535A
-180
V
CEO
Collector-Emitter
Voltage
2SA1535
-150
V
2SA1535A
-180
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-1
A
I
C
Collector Current-Peak
-1.5
A
P
C
Collector Power Dissipation
@ TC=25℃
15
W
Collector Power Dissipation
@ Ta=25℃
2
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc
Silicon PNP Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
= -150V(Min) -2SA1535
(BR)CEO
= -180V(Min) -2SA1535A
·Good Linearity of h
FE
·Complement to Type 2SC3944/A
APPLICATIONS
·Designed for low-frequency driver and high power amplifi-
cation, is optimum for the driver-stage of a 60W to 100 W
output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SA1535/A
isc website： www.iscsemi.com isc & iscsemi is registered trademark
Page 2
INCHANGE Semiconductor
2
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
2SA1535
IC= -50mA ; IB= 0
-150
V
2SA1535A
-180
V
(BR)EBO
Emitter-Base Breakdown Voltage
IE= -10μA ; IC= 0
-5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
-2.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
-2.0
V
I
CBO
Collector Cutoff Current
VCB= -150V ; IE= 0
-10
μA
h
FE-1
DC Current Gain
IC= -150mA ; VCE= -10V
90
330
h
FE-2
DC Current Gain
IC= -0.5A ; VCE= -5V
50
C
OB
Output Capacitance
IE= 0; VCB= -10V;f
test
= 1MHz
30
pF
f
T
Current-Gain—Bandwidth Product
IC= -50mA;VCE= -10V;f
test
= 10MHz
200
MHz
h
FE-1
Classifications
QRS
90-155
130-220
185-330
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
2SA1535/A
isc website： www.iscsemi.com isc & iscsemi is registered trademark
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