固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors MJ3000/3001
DESCRIPTION
·With TO-3 package
·DARLINGTON
·High DC current gain
·Complement to type MJ2500/2501
APPLICATIONS
·For use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
MJ3000 60
V
Collector-base voltage
CBO
MJ3001
MJ3000 60
V
Collector-emitter voltage
CEO
MJ3001
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 10 A
IB Base current 0.2 A
Open emitter
Open base
V
80
V
80
T
PD Total power dissipation
Tj Junction temperature 200
T
Storage temperature -55~200
stg
=25℃
C
150 W
℃
℃
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors MJ3000/3001
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=5A ; VCE=3V 3.0 V
I
CER
I
CEO
I
EBO
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=5A; IB=20mA 2.0 V
Collector-emitter saturation voltage IC=10A; IB=50mA 4.0 V
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 2.0 mA
MJ3000 60
IC=0.1A ;IB=0
MJ3001
=60V; RBE=1.0kΩ
V
MJ3000
MJ3001
MJ3000 VCE=30V; IB=0
MJ3001 V
CE
TC=150℃
VCE=80V; RBE=1.0kΩ
TC=150℃
=40V; IB=0
CE
80
1.0 mA
V
1.0
5.0
mA
1.0
5.0
hFE DC current gain IC=5A ; VCE=3V 1000
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-c
2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors MJ3000/3001
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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