FREI LM 385 D2,5 Datasheet

LM285, LM385B
Micropower Voltage Reference Diodes
The LM285/LM385 series are micropower twoterminal bandgap
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a −40°C to +85°C temperature range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
PbFree Packages are Available
Operating Current from 10 mA to 20 mA
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
Low Temperature Coefficient
1.0 W Dynamic Impedance
Surface Mount Package Available
Cathode
http://onsemi.com
N.C.
Cathode
Anode
TO923 (TO−226)
Z SUFFIX
CASE 29
8
1
SOIC8
D SUFFIX
CASE 751
xxx = 1.2 or 2.5 y = 2 or 3 z = 1 or 2 A = Assembly Location L = Wafer Lot Y = Year W, WW = Work Week
MARKING
DIAGRAMS
LMy85
Zxxx
ALYWW
8
y85z
AYW
1
360 k Open for 1.235 V
600 k
for 2.5 V
600 k
Open
8.45 k
74.3 k
425 k
Figure 1. Representative Schematic Diagram
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 6
600 k
Anode
10 k
N.C.
N.C.
N.C.
Anode
1
2
3
4
8
Cathode
7
N.C.
6
N.C.
5
N.C.
(Bottom View)
Standard Application
+
500 W
1.5 V
Battery
100 k
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
1 Publication Order Number:
132
3.3 k
1.235 V
LM3851.2
LM285/D
LM285, LM385B
MAXIMUM RATINGS (T
Reverse Current I
Forward Current I
Operating Ambient Temperature Range
Operating Junction Temperature T
Storage Temperature Range T
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM)
= 25°C, unless otherwise noted)
A
Rating
LM285 LM385
Symbol Value Unit
R
F
T
A
30 mA
10 mA
°C
40 to +85 0 to +70
J
stg
ESD
+150 °C
65 to + 150 °C
V
4000
400
2000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
= 25°C, unless otherwise noted)
A
LM2851.2 LM3851.2/LM385B1.2
Characteristic Symbol
Reverse Breakdown Voltage (I
v IR v 20 mA)
Rmin
LM2851.2/LM385B1.2
= T
to T
T
A
low
high
(Note 1)
LM3851.2
= T
to T
T
A
low
high
(Note 1)
Minimum Operating Current
= 25°C
T
A
= T
to T
T
A
low
high
(Note 1)
Reverse Breakdown Voltage Change with Current
v IR v 1.0 mA, TA = +25°C
I
Rmin
= T
to T
T
A
low
1.0 mA v I = T
T
A
low
(Note 1)
high
v 20 mA, TA = +25°C
R
to T
(Note 1)
high
Reverse Dynamic Impedance
I
= 100 mA, TA = +25°C
R
Average Temperature Coefficient
10 mA v I
v 20 mA, TA = T
R
low
to T
high
(Note 1)
Wideband Noise (RMS)
I
= 100 mA, 10 Hz v f v 10 kHz
R
Long Term Stability
I
= 100 mA, TA = +25°C ± 0.1°C
R
Reverse Breakdown Voltage (I
v IR v 20 mA)
Rmin
LM2852.5/LM385B2.5
= T
to T
T
A
low
high
(Note 1)
LM3852.5
= T
to T
T
A
low
high
(Note 1)
Minimum Operating Current
= 25°C
T
A
= T
to T
high
(Note 1)
1. T
T
A
low
= 40°C for LM2851.2, LM2852.5
low
= +85°C for LM285−1.2, LM285−2.5
T
high
= 0°C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5
T
low
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
DV
V
DV
V
(BR)R
I
Rmin
(BR)R
Z
(BR)
n
S
(BR)R
I
Rmin
Min Typ Max Min Typ Max
1.223
1.200
1.235
8.0
1.247
1.270
1.223
1.210
1.205
1.192
10
20
1.0
1.5 10 20
0.6 0.6
/DT
80 80
60 60
20 20
2.462
2.415
2.5
2.538
2.585
13
20 30
2.462
2.436
2.425
2.400
1.235
1.235
8.0
2.5
2.5
13
Unit
V
1.247
1.260
1.260
1.273
mA 15 20
mV
1.0
1.5 20 25
W
ppm/°C
mV
ppm/kHR
V
2.538
2.564
2.575
2.600
mA
20 30
http://onsemi.com
2
LM285, LM385B
ELECTRICAL CHARACTERISTICS (T
A
Characteristic Symbol
Reverse Breakdown Voltage Change with Current
v IR v 1.0 mA, TA = +25°C
I
Rmin
= T
to T
T
A
low
1.0 mA v I = T
T
A
low
(Note 2)
high
v 20 mA, TA = +25°C
R
to T
(Note 2)
high
Reverse Dynamic Impedance
I
= 100 mA, TA = +25°C
R
Average Temperature Coefficient
20 mA v I
v 20 mA, TA = T
R
low
to T
high
(Note 2)
Wideband Noise (RMS)
I
= 100 mA, 10 Hz v f v 10 kHz
R
Long Term Stability
I
= 100 mA, TA = +25°C ± 0.1°C
R
2. T
= 40°C for LM2851.2, LM2852.5
low
= +85°C for LM285−1.2, LM285−2.5
T
high
= 0°C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5
T
low
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
= 25°C, unless otherwise noted)
Min Typ Max Min Typ Max
DV
(BR)R
Z
0.6 0.6
DV
/DT
(BR)
80 80
n
120 120
S
20 20
LM2851.2 LM3851.2/LM385B1.2
1.0
1.5 10
20
2.0
2.5 20
25
Unit
mV
W
ppm/°C
mV
ppm/kHR
http://onsemi.com
3
100
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B1.2
10
1.0
, REVERSE CURRENT (A)µI
R
0.1
1.2
1.0
0.8
0.6
0.4
, FORWARD VOLTAGE (V)
F
V
0.2
TA = +85°C
+25 °C
0.2 0.4 0.6 0.8 1.0 1.2101.4
0
V(
, REVERSE VOLTAGE (V)
BR)
−40 °C
, REVERSE VOLTAGE CHANGE (mV)
(BR)R
V
−2.0
8.0
6.0
4.0
2.0
0
0.1 1.0 10 1000.01 , REVERSE CURRENT (mA)
I
R
TA = +85°C
+25 °C
−40 °C
Figure 2. Reverse Characteristics Figure 3. Reverse Characteristics
1.250
1.240
TA = −40°C
1.230
+25 °C
0
, FORWARD CURRENT (mA)
I
F
+85 °C
, REVERSE VOLTAGE (V)
1.220
(BR)R
V
100.01 1001.00.1
1.210
T
, AMBIENT TEMPERATURE (°C)
A
IR = 100 mA
1007550025−25−50
125
Figure 4. Forward Characteristics Figure 5. Temperature Drift
, NOISE (nV/ Hz)
n
e
875
750
625
500
375
250
125
0
100
f, FREQUENCY (Hz)
1.0K 100k10K10
Figure 6. Noise Voltage
OUTPUT (V)INPUT (V)
1.50
1.25
1.00
0.75
0.50
0.25
5.0
Input
100 k
Output
DUT
0
10
0
0 1.00.90.80.70.60.30.20.1
t, TIME (ms)
1.1
Figure 7. Response Time
http://onsemi.com
4
100
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B2.5
10
1.0
, REVERSE CURRENT (A)µI
R
0.1
1.2
1.0
0.8
0.6
0.4
, FORWARD VOLTAGE (V)
F
V
0.2
8.0
TA = +85°C
+25 °C
−40 °C
0.5 1.0 1.5 2.0 2.5 3.0103.5
0
V(
, REVERSE VOLTAGE (V)
BR)
Figure 8. Reverse Characteristics
TA = −40°C
+85 °C
+25 °C
0
, FORWARD CURRENT (mA)
I
F
100.01 1001.00.1
Figure 10. Forward Characteristics
6.0
4.0
2.0
, REVERSE VOLTAGE CHANGE (mV)
(BR)R
V
−2.0
2.520
2.510
2.500
2.490
2.480
, REVERSE VOLTAGE (V)
2.470
(BR)R
2.460
V
2.450
0
0.1 1.0 10 1000.01 , REVERSE CURRENT (mA)
I
R
Figure 9. Reverse Characteristics
T
, AMBIENT TEMPERATURE (°C)
A
Figure 11. Temperature Drift
TA = +85°C
+25 °C
−40 °C
IR = 100 mA
1007550025−25−50
125
3.00
, NOISE (nV/ Hz)
n
e
1500
1250
1000
750
500
250
2.50
2.00
1.50
OUTPUT (V)INPUT (V)
1.00
0.50
0
10
5.0
0
100 1.0K 100k10K10
f, FREQUENCY (Hz)
0
0 1.00.90.80.70.60.30.20.1
t, TIME (ms)
Input
DUT
100 k
Output
1.1
Figure 12. Noise Voltage Figure 13. Response Time
http://onsemi.com
5
LM285, LM385B
ORDERING INFORMATION
Reverse BreakDown
Device Operating Temperature Range
LM285D1.2 TA = 40°C to +85°C 1.235 V SOIC8 98 Units / Rail
LM285D1.2R2 TA = 40°C to +85°C 1.235 V SOIC8 2000 / Tape & Reel
LM285D1.2R2G TA = 40°C to +85°C 1.235 V SOIC8
LM285D2.5 TA = 40°C to +85°C 2.500 V SOIC8 98 Units / Rail
LM285D2.5R2 TA = 40°C to +85°C 2.500 V SOIC8 2500 / Tape & Reel
LM285D2.5R2G TA = 40°C to +85°C 2.500 V SOIC8
LM285Z1.2 TA = 40°C to +85°C 1.235 V TO92 2000 Units / Bag
LM285Z1.2G TA = 40°C to +85°C 1.235 V TO92
LM285Z2.5 TA = 40°C to +85°C 2.500 V TO92 2000 Units / Bag
LM285Z2.5G TA = 40°C to +85°C 2.500 V TO92
LM285Z1.2RA TA = 40°C to +85°C 1.235 V TO92 2000 / Tape & Reel
LM285Z1.2RAG TA = 40°C to +85°C 1.235 V TO92
LM285Z2.5RA TA = 40°C to +85°C 2.500 V TO92 2000 / Tape & Reel
LM285Z2.5RAG TA = 40°C to +85°C 2.500 V TO92
LM285Z2.5RP TA = 40°C to +85°C 2.500 V TO92 2000 Units / FanFold
LM385BD1.2 TA = 0°C to +70°C 1.235 V SOIC8 98 Units / Rail
LM385BD1.2G TA = 0°C to +70°C 1.235 V SOIC8
LM385BD1.2R2 TA = 0°C to +70°C 1.235 V SOIC8 2500 / Tape & Reel
LM385BD1.2R2G TA = 0°C to +70°C 1.235 V SOIC8
LM385BD2.5 TA = 0°C to +70°C 2.500 V SOIC8 98 Units / Rail
LM385BD2.5G TA = 0°C to +70°C 2.500 V SOIC8
LM385BD2.5R2 TA = 0°C to +70°C 2.500 V SOIC8 2500 / Tape & Reel
LM385BD2.5R2G TA = 0°C to +70°C 2.500 V SOIC8
LM385BZ1.2 TA = 0°C to +70°C 1.235 V TO92 2000 Units / Bag
LM385BZ1.2G TA = 0°C to +70°C 1.235 V TO92
LM385BZ1.2RA TA = 0°C to +70°C 1.235 V TO92 2000 / Tape & Reel
LM385BZ1.2RAG TA = 0°C to +70°C 1.235 V TO92
LM385BZ2.5 TA = 0°C to +70°C 2.500 V TO92 2000 Units / Rail
LM385BZ2.5G TA = 0°C to +70°C 2.500 V TO92
LM385BZ2.5RA TA = 0°C to +70°C 2.500 V TO92 2000 Units / Rail
LM385BZ2.5RAG TA = 0°C to +70°C 2.500 V TO92
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
Voltage
Package Shipping
2000 / Tape & Reel
(PbFree)
2500 / Tape & Reel
(PbFree)
2000 Units / Bag
(PbFree)
2000 Units / Bag
(PbFree)
2000 / Tape & Reel
(PbFree)
2000 / Tape & Reel
(PbFree)
98 Units / Rail
(PbFree)
2500 / Tape & Reel
(PbFree)
98 Units / Rail
(PbFree)
2500 / Tape & Reel
(PbFree)
2000 Units / Bag
(PbFree)
2000 / Tape & Reel
(PbFree)
2000 Units / Rail
(PbFree)
2000 Units / Rail
(PbFree)
http://onsemi.com
6
LM285, LM385B
ORDERING INFORMATION
Reverse Break−Down
Device Shipping
LM385D1.2 TA = 0°C to +70°C 1.235 V SOIC8 98 Units / Rail
LM385D1.2G TA = 0°C to +70°C 1.235 V SOIC8
LM385D1.2R2 TA = 0°C to +70°C 1.235 V SOIC8 2500 / Tape & Reel
LM385D1.2R2G TA = 0°C to +70°C 1.235 V SOIC8
LM385D2.5 TA = 0°C to +70°C 2.500 V SOIC8 98 Units / Rail
LM385D2.5G TA = 0°C to +70°C 2.500 V SOIC8
LM385D2.5R2 TA = 0°C to +70°C 2.500 V SOIC8 2500 / Tape & Reel
LM385D2.5R2G TA = 0°C to +70°C 2.500 V SOIC8
LM385Z1.2 TA = 0°C to +70°C 1.235 V TO92 2000 Unit / Rail
LM385Z1.2G TA = 0°C to +70°C 1.235 V TO92
LM385Z1.2RA TA = 0°C to +70°C 1.235 V TO92 2000 Unit / Rail
LM385Z1.2RP TA = 0°C to +70°C 1.235 V TO92 2000 Unit / Rail
LM385Z1.2RPG TA = 0°C to +70°C 1.235 V TO92
LM385Z2.5 TA = 0°C to +70°C 2.500 V TO92 2000 Unit / Rail
LM385Z2.5G TA = 0°C to +70°C 2.500 V TO92
LM385Z2.5RP TA = 0°C to +70°C 2.500 V TO92 2000 Unit / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
Operating Temperature Range
Voltage
Package
98 Units / Rail
(PbFree)
2500 / Tape & Reel
(PbFree)
98 Units / Rail
(PbFree)
2500 / Tape & Reel
(PbFree)
2000 Unit / Rail
(PbFree)
2000 Unit / Rail
(PbFree)
2000 Unit / Rail
(PbFree)
http://onsemi.com
7
SEATING PLANE
LM285, LM385B
PACKAGE DIMENSIONS
TO92 (TO−226)
Z SUFFIX
A
B
R
P
L
K
XX
G
H
V
1
C
SECTION X−X
N
N
CASE 2911
ISSUE AL
D
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
http://onsemi.com
8
Y
Z
LM285, LM385B
PACKAGE DIMENSIONS
SOIC8 NB
CASE 75107
ISSUE AE
X
B
H
A
58
1
4
G
D
0.25 (0.010) Z
M
S
0.25 (0.010)
M
M
Y
K
Y
C
SXS
SEATING PLANE
0.10 (0.004)
N
X 45
_
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. 75101 THRU 75106 ARE OBSOLETE. NEW STANDARD IS 75107.
MILLIMETERS
DIMAMIN MAX MIN MAX
4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.053 0.069 D 0.33 0.51 0.013 0.020 G 1.27 BSC 0.050 BSC H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010 K 0.40 1.27 0.016 0.050 M 0 8 0 8
____
N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244
INCHES
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
0.6
0.024
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
4.0
0.155
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
http://onsemi.com
9
LM285, LM385B
SENSEFET is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone: 4808297710 or 8003443860 Toll Free USA/Canada Fax: 4808297709 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 153−0051
Phone: 81357733850
http://onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
LM285/D
10
Loading...