The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
• Pb−Free Packages are Available
• Operating Current from 10 mA to 20 mA
• 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
• Low Temperature Coefficient
• 1.0 W Dynamic Impedance
• Surface Mount Package Available
Cathode
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N.C.
Cathode
Anode
TO−92−3 (TO−226)
Z SUFFIX
CASE 29
8
1
SOIC−8
D SUFFIX
CASE 751
xxx= 1.2 or 2.5
y= 2 or 3
z= 1 or 2
A= Assembly Location
L= Wafer Lot
Y= Year
W, WW = Work Week
MARKING
DIAGRAMS
LMy85
Z−xxx
ALYWW
8
y85−z
AYW
1
360 k
Open
for 1.235 V
600 k
for 2.5 V
600 k
Open
8.45 k
74.3 k
425 k
Figure 1. Representative Schematic Diagram
Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 6
600 k
Anode
10 k
N.C.
N.C.
N.C.
Anode
1
2
3
4
8
Cathode
7
N.C.
6
N.C.
5
N.C.
(Bottom View)
Standard Application
+
−
500 W
1.5 V
Battery
100 k
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1Publication Order Number:
132
3.3 k
1.235 V
LM385−1.2
LM285/D
LM285, LM385B
MAXIMUM RATINGS (T
Reverse CurrentI
Forward CurrentI
Operating Ambient Temperature Range
Operating Junction TemperatureT
Storage Temperature RangeT
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
= 25°C, unless otherwise noted)
A
Rating
LM285
LM385
SymbolValueUnit
R
F
T
A
30mA
10mA
°C
−40 to +85
0 to +70
J
stg
ESD
+150°C
−65 to + 150°C
V
4000
400
2000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
= 25°C, unless otherwise noted)
A
LM285−1.2LM385−1.2/LM385B−1.2
CharacteristicSymbol
Reverse Breakdown Voltage (I
v IR v 20 mA)
Rmin
LM285−1.2/LM385B−1.2
= T
to T
T
A
low
high
(Note 1)
LM385−1.2
= T
to T
T
A
low
high
(Note 1)
Minimum Operating Current
= 25°C
T
A
= T
to T
T
A
low
high
(Note 1)
Reverse Breakdown Voltage Change with Current
v IR v 1.0 mA, TA = +25°C
I
Rmin
= T
to T
T
A
low
1.0 mA v I
= T
T
A
low
(Note 1)
high
v 20 mA, TA = +25°C
R
to T
(Note 1)
high
Reverse Dynamic Impedance
I
= 100 mA, TA = +25°C
R
Average Temperature Coefficient
10 mA v I
v 20 mA, TA = T
R
low
to T
high
(Note 1)
Wideband Noise (RMS)
I
= 100 mA, 10 Hz v f v 10 kHz
R
Long Term Stability
I
= 100 mA, TA = +25°C ± 0.1°C
R
Reverse Breakdown Voltage (I
v IR v 20 mA)
Rmin
LM285−2.5/LM385B−2.5
= T
to T
T
A
low
high
(Note 1)
LM385−2.5
= T
to T
T
A
low
high
(Note 1)
Minimum Operating Current
= 25°C
T
A
= T
to T
high
(Note 1)
1. T
T
A
low
= −40°C for LM285−1.2, LM285−2.5
low
= +85°C for LM285−1.2, LM285−2.5
T
high
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
low
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
DV
V
DV
V
(BR)R
I
Rmin
(BR)R
Z
(BR)
n
S
(BR)R
I
Rmin
MinTypMaxMinTypMax
1.223
1.200
1.235
−
−
−
−
−
−
−
−
8.0
1.247
−
1.270
−
−
1.223
1.210
−
1.205
−
1.192
10
−
−
−
−
−
20
1.0
1.5
10
20
−
−
−
−
−
−0.6−−0.6−
/DT
−80−−80−
−60−−60−
−20−−20−
2.462
2.415
2.5
2.538
−
2.585
−
−
−
−
−
−
13
−
20
30
2.462
2.436
−
2.425
−
2.400
−
−
1.235
−
1.235
−
8.0
−
−
−
−
−
2.5
−
2.5
−
13
−
Unit
V
1.247
1.260
1.260
1.273
mA
15
20
mV
1.0
1.5
20
25
W
ppm/°C
mV
ppm/kHR
V
2.538
2.564
2.575
2.600
mA
20
30
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2
LM285, LM385B
ELECTRICAL CHARACTERISTICS (T
A
CharacteristicSymbol
Reverse Breakdown Voltage Change with Current
v IR v 1.0 mA, TA = +25°C
I
Rmin
= T
to T
T
A
low
1.0 mA v I
= T
T
A
low
(Note 2)
high
v 20 mA, TA = +25°C
R
to T
(Note 2)
high
Reverse Dynamic Impedance
I
= 100 mA, TA = +25°C
R
Average Temperature Coefficient
20 mA v I
v 20 mA, TA = T
R
low
to T
high
(Note 2)
Wideband Noise (RMS)
I
= 100 mA, 10 Hz v f v 10 kHz
R
Long Term Stability
I
= 100 mA, TA = +25°C ± 0.1°C
R
2. T
= −40°C for LM285−1.2, LM285−2.5
low
= +85°C for LM285−1.2, LM285−2.5
T
high
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
low
=+70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
T
high
= 25°C, unless otherwise noted)
MinTypMaxMinTypMax
DV
(BR)R
−
−
−
−
Z
−0.6−−0.6−
DV
/DT
(BR)
−80−−80−
n
−120−−120−
S
−20−−20−
LM285−1.2LM385−1.2/LM385B−1.2
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
2.0
2.5
20
25
Unit
mV
W
ppm/°C
mV
ppm/kHR
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3
√
100
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
4.0
0.155
1.270
0.050
SCALE 6:1
ǒ
inches
mm
Ǔ
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9
LM285, LM385B
SENSEFET is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
LM285/D
10
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