FREI CNY 37 Datasheet

TCST110. up to TCST230.

Vishay Semiconductors

Transmissive Optical Sensor with Phototransistor
Output

Description

This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.

B)

Applications

D

Contactless optoelectronic switch, control and
counter

Features

D

Compact construction

D

No setting efforts

D

Polycarbonate case protected against
ambient light

D

2 case variations

D

3 different apertures

D

CTR selected in groups
(regarding fourth number of type designation)

+

E

Order Instruction

Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCST1103
TCST2103
TCST1202
TCST2202
TCST1300
TCST2300

A)

B)
A)
B)
A)
B)

0.6 / 1.0 No mounting flags

0.4 / 0.5 No mounting flags

0.2 / 0.25 No mounting flags

A)

15136

95 10796

D

+

7.6

0.3”

Top view

With two mounting flags

With two mounting flags

With two mounting flags

Rev. A5, 08–Jun–99

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TCST110. up to TCST230.

Vishay Semiconductors

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T

≤ 25°C P

amb

≤ 25°C P

amb

R

F

FSM

V

CEO
ECO

C

CM

V

6 V

60 mA

3 A

100 mW

j

100

°

C

70 V

7 V
100 mA
200 mA
150 mW

j

100

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit
Total power dissipation T
Operating temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T

≤ 25°C P

amb

tot

amb

stg

sd

250 mW

–55 to +85

–55 to +100

260

°

C

°

C

°

C

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2 (9) Rev. A5, 08–Jun–99

Document Number 83764

TCST110. up to TCST230.

F

F

g

g

Vishay Semiconductors

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA V
Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 10 mA V
Collector dark current VCE = 25 V, IF = 0, E = 0 I

Coupler

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

Current transfer ratio VCE = 5 V,

IF = 20 mA

Collector current VCE = 5 V,

IF = 20 mA

Collector emitter
saturation voltage

IF = 20 mA,
IC = 1 mA

IF = 20 mA,
IC = 0.5 mA

IF = 20 mA,
IC = 0.1 mA

Resolution, path of the

I

= 10 to 90% TCST1103,

Crel

shutter crossing the
radiant sensitive zone

TCST1103,

TCST2103

TCST1202,

TCST2202

TCST1300,

TCST2300

TCST1103,

TCST2103

TCST1202,

TCST2202

TCST1300,

TCST2300

TCST1103,

TCST2103

TCST1202,

TCST2202

TCST1300,

TCST2300

TCST2103

TCST1202,

TCST2202

TCST1300,

TCST2300

F

CEO
ECO

CEO

j

70 V

7 V

1.25 1.6 V
50 pF

100 nA

CTR 10 20 %

CTR 5 10 %

CTR 1.25 2.5 %

V

CEsat

V

CEsat

V

CEsat

I

C

I

C

I

C

2 4 mA

1 2 mA

0.25 0.5 mA

0.4 V

0.4 V

0.4 V

s 0.6 mm

s 0.4 mm

s 0.2 mm

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Rev. A5, 08–Jun–99

3 (9)

TCST110. up to TCST230.

S C L

(g)

Vishay Semiconductors

Switching Characteristics

Parameter Test Conditions Symbol Typ. Unit
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) t
Turn-off time

on

t

off

10.0

8.0

m

s

m

s

0

+ 5 V

I

= 2 mA;

C

W

= 50 W

R

G

t

p

= 0.01

T

t

= 50 ms

p

95 10897

I

I

F

F

50

W

100

Figure 1. Test circuit, saturated operation

Channel I

Channel II

adjusted through
input amplitude

Oscilloscope

R

y 1 M

W

L

C

x 20 pF

L

I

F

0

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

t

d

t

r

t

(= td + tr) turn-on time

on

pulse duration
delay time
rise time

Figure 2. Switching times

96 11698

t

p

t

t

s

f

t

off

t

s

t

f

(= ts + tf) turn-off time

t

off

t

t

storage time
fall time

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4 (9) Rev. A5, 08–Jun–99

Document Number 83764

TCST110. up to TCST230.

Vishay Semiconductors

Typical Characteristics (T

400

300

Coupled device

200

Phototransistor

IR-diode

100

tot

P – Total Power Dissipation ( mW )

0

0 30 60 90 120

95 11088

1000.0

100.0

T

– Ambient Temperature ( °C )

amb

Figure 3. Total Power Dissipation vs.

Ambient Temperature

= 25_C, unless otherwise specified)

amb

10000

VCE=25V
I

=0

F

10

1

0255075

T

– Ambient Temperature ( °C )

amb

150

1000

100

with open Base ( nA )

CEO

I – Collector Dark Current,

95 11090

Figure 6. Collector Dark Current vs. Ambient Temperature

10.000
VCE=5V

1.000

100

10.0

1.0

F

I – Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 4. Forward Current vs. Forward Voltage

2.0
VCE=5V

I

=20mA

F

1.5

1.0

0.5

rel

CTR – Relative Current Transfer Ratio

0

95 11089

–25 0 25 50

T

– Ambient Temperature ( °C )

amb

75

100

0.100

0.010

C

I – Collector Current ( mA )

0.001

0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 12066

Figure 7. Collector Current vs. Forward Current

10.00

1.00

0.10

C

I – Collector Current ( mA )

0.01

0.1 1.0 10.0 100.0

VCE – Collector Emitter Voltage ( V )96 12067

IF=50mA

20mA
10mA

5mA

2mA

1mA

Figure 5. Relative Current Transfer Ratio vs.

Ambient Temperature

Rev. A5, 08–Jun–99

Figure 8. Collector Current vs. Collector Emitter Voltage

www.vishay.comDocument Number 83764

5 (9)

TCST110. up to TCST230.

Vishay Semiconductors

100.0
VCE=5V

10.0

1.0

CTR – Current Transfer Ratio ( % )

0.1

0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 12068

Figure 9. Current Transfer Ratio vs. Forward Current

20

m

off

on

t / t – Turn on / Turn off Time ( s )

95 11086

15

10

5

0

02 46

I

– Collector Current ( mA )

C

Non Saturated
Operation
V

=5V

S

R

=100

W

L

8

t

on

t

off

10

Figure 10. Turn on / off Time vs. Collector Current

110
100

90
80
70
60
50
40
30
20

Crel

I – Relative Collector Current

10

0

–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5

0

A=1mm

s

s – Displacement ( mm )96 12005

Figure 11. Relative Collector Current vs. Displacement

110
100

90
80
70
60
50
40
30
20

Crel

I – Relative Collector Current

10

–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5

0

A=0.5mm

s

0

s – Displacement ( mm )96 12006

Figure 12. Relative Collector Current vs. Displacement

110
100

90
80
70
60
50
40
30
20

Crel

I – Relative Collector Current

10

–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5

0

A=0.25mm

s

0

s – Displacement ( mm )96 12007

Figure 13. Relative Collector Current vs. Displacement

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6 (9) Rev. A5, 08–Jun–99

Document Number 83764

Dimensions of TCST1.0. in mm

TCST110. up to TCST230.

Vishay Semiconductors

96 12094

Rev. A5, 08–Jun–99

www.vishay.comDocument Number 83764

7 (9)

TCST110. up to TCST230.

Vishay Semiconductors

Dimensions of TCST2.0. in mm

96 12095

www.vishay.com

8 (9) Rev. A5, 08–Jun–99

Document Number 83764

TCST110. up to TCST230.

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Rev. A5, 08–Jun–99

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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