Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD440 BD442
DESCRIPTION ·
·With TO-126 package
·Complement to type BD439,BD441
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter -base voltage Open collector
EBO
IC Collector current (DC)
ICM Collector current-Peak
℃)
BD440
BD442
BD440
BD442
Open emitter
Open base
-60
-80
-60
-80
-5
-4
-7
V
V
V
A
A
IB Base current
PC Collector power dissipation TC=25℃ 36 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
-1
A
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD440 BD442
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage
CEsat
V
Base-emitter on voltage
BE-1
V
Base-emitter on voltage
BE-2
I
=-2A; IB=-0.2A
C
I
=-10mA ; VCE=-5V
C
I
=-2A ; VCE=-1V
C
-0.58
-0.8
V
V
-1.5
V
V
CEO(SUS)
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter
sustaining voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
BD440
BD442
BD440
BD442
BD440
BD442
I
=-0.1A; IB=0
C
V
=-60V; IE=0
CB
V
=-80V; IE=0
CB
V
=-60V; VBE=0
CE
VCE=-80V; VBE=0
V
=-5V; IC=0
EB
-60
-80
BD440 20
=-10mA ; VCE=-5V
I
C
BD442
I
=-0.5A ; VCE=-1V
C
15
40 140
BD440 25
=-2A ; VCE=-1V
I
C
BD442
15
V
-100
-100
130
-1
μA
μA
mA
fT Transition frequency
I
=-250mA; VCE=-1V
C
2
3 MHz
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD440 BD442
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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