Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD318
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD317
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN DESCRIPTION
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -16 A
ICM Collector current(peak) -20 A
IB Base current -5 A
PT Total power dissipation TC=25℃ 200 W
Tj Junction temperature -65~200 ℃
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -100 V
Emitter-base voltage Open collector -7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 0.875
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD318
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
V
V
Collector-emitter sustaining voltage IC=-0.2A ; IB=0 -100 V
Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.0 V
CEsat
Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.8 V
BEsat
Base-emitter on voltage I
BE(on)
I
Collector cut-off current VCB=100V;IE=0 -1.0 mA
CBO
I
Emitter cut-off current VEB=-7V; IC=0 -1.0 mA
EBO
h
DC current gain IC=-5A ; VCE=-4V 25
FE-1
h
DC current gain IC=-10A ; VCE=-4V 15
FE-2
fT Transition frequency IC=-1A ; VCE=-20V,f=0.2MHz 1 MHz
=-8A ;VCE=-2.0V -1.5 V
C
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors BD318
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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