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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD317
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD318
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 16 A
ICM Collector current(peak) 20 A
IB Base current 5 A
PD Total power dissipation TC=25℃ 200 W
Tj Junction temperature -65~200 ℃
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 0.875
th j-c
℃/W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD317
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
V
V
Collector-emitter sustaining voltage IC=0.2A ; IB=0 100 V
Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.0 V
CEsat
Base-emitter saturation voltage IC=8A ;IB=0.8A 1.8 V
BEsat
Base-emitter on voltage IC=8A ;VCE=2.0V 1.5 V
BE(on)
I
Collector cut-off current VCB=100V;IE=0 1.0 mA
CBO
I
Emitter cut-off current VEB=7V; IC=0 1.0 mA
EBO
h
DC current gain IC=5A ; VCE=4V 25
FE-1
h
DC current gain IC=10A ; VCE=4V 15
FE-2
fT Transition frequency IC=1A ; VCE=20V,f=0.5MHz 1.0 MHz
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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD317
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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