Page 1
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
! " # $ % & ' ( ) " ! * + & ' " (
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
● Designed for Complementary Use with the
BD246 Series
● 80 W at 25°C Case Temperature
● 10 A Continuous Collector Current
● 15 A Peak Collector Current
● Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, RBE = 100 Ω,
V
BE(off)
= 0, RS = 0.1 Ω, VCC = 20 V.
RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD245
BD245A
BD245B
BD245C
V
CER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD245
BD245A
BD245B
BD245C
V
CEO
45
60
80
100
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
10 A
Peak collector current (see Note 1) I
CM
15 A
Continuous base current I
B
3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
80 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
3 W
Unclamped inductive load energy (see Note 4) ½LI
C
2
62.5 mJ
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
250 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
Page 2
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
2
! " # $ % & ' ( ) " ! * + & ' " (
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
BD245
BD245A
BD245B
BD245C
45
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 55 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
VBE= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD245
BD245A
BD245B
BD245C
0.4
0.4
0.4
0.4
mA
I
CEO
Collector cut-off
current
VCE= 30 V
V
CE
= 60 V
IB= 0
I
B
= 0
BD245/245A
BD245B/245C
0.7
0.7
mA
I
EBO
Emitter cut-off
current
VEB = 5 V IC= 0 1 mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
IC= 1 A
I
C
= 3 A
I
C
= 10 A
(see Notes 5 and 6)
40
20
4
V
CE(sat)
Collector-emitter
saturation voltage
IB = 0.3 A
IB = 2.5 A
I
C
= 3 A
IC= 10 A
(see Notes 5 and 6)
1
4
V
V
BE
Base-emitter
voltage
VCE = 4 V
V
CE
= 4 V
IC= 3 A
I
C
= 10 A
(see Notes 5 and 6)
1.6
3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.5 A f = 1 kHz 20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V IC= 0.5 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.56 °C/W
R
θJA
Junction to free air thermal resistance 42 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Turn-on time IC = 1 A
V
BE(off)
= -3.7 V
I
B(on)
= 0.1 A
R
L
= 20 Ω
I
B(off)
= -0.1 A
t
p
= 20 µs, dc ≤ 2%
0.3 µs
t
off
Turn-off time 1 µs
Page 3
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
3
! " # $ % & ' ( ) " ! * + & ' " (
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
h
FE
- DC Current Gain
1·0
10
100
1000
TCS633AG
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0·01 0·1 1·0 10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10
TCS633AB
IC = 1 A
IC = 3 A
IC = 6 A
IC = 10 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1 10
V
BE
- Base-Emitter Voltage - V
0·6
0·8
1·0
1·2
1·4
1·6
1·8
TCS633AC
VCE = 4 V
T
C
= 25°C
Page 4
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
4
! " # $ % & ' ( ) " ! * + & ' " (
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0·1
1·0
10
100
SAS633AC
BD245
BD245A
BD245B
BD245C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
TIS633AA
Page 5
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
5
! " # $ % & ' ( ) " ! * + & ' " (
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1 2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
ø
Loading...