Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD241/A/B/C
DESCRIPTION ·
·With TO-220C package
·Complement to type BD242/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
℃)
BD241 55
BD241A 70
BD241B 90
BD241C
BD241 45
BD241A 60
BD241B 80
BD241C
Open emitter
Open base
V
115
V
100
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
IB Base current 1 A
PC Collector power dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD241/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD241 45
V
CEO(SUS)
V
CEsat
V
BE
I
CEO
I
CES
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=3A;IB=0.6 A 1.2 V
Base-emitter on voltage IC=3A ; VCE=4V 1.8 V
Collector cut-off current
Collector cut-off current
BD241A 60
I
=30mA; IB=0
C
BD241B 80
BD241C
BD241/A VCE=30V; IB=0
BD241B/C VCE=60V; IB=0
BD241 VCE=45V; VBE=0
BD241A VCE=60V; VBE=0
BD241B VCE=80V; VBE=0
BD241C V
=100V; VBE=0
CE
100
0.3 mA
0.2 mA
V
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=1A ; VCE=4V 25
FE-1
h
DC current gain IC=3A ; VCE=4V 10
FE-2
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD241/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Loading...