Page 1
2002. 11. 13 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC516
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-10 V
Collector Current
I
C
-500 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-0.1mA, IE=0
-40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-10mA, IB=0
-30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-1.0mA, IC=0
-10 - - V
Collector Cut-off Current
I
CBO
VCB=-40V, IE=0
- - -1.0
A
Emitter Cut-off Current
I
EBO
VEB=-10V, IC=0
- - -1.0
A
DC Current Gain
h
FE
IC=-100mA, VCE=-2V
30k - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-1mA
- - -1.0 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-100mA, IB=-1mA
- -1.5 -2.0 V
Current Gain Bandwidth Product
f
T
IC=-100mA, VCE=-2V, f=100MHz
- 220 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz, IE=0
- 5.0 - pF
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. COLLECTOR
2. BASE
3. EMITTER
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
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