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2N2369A
SILICON
NPN TRANSISTOR
TO-18 CASE
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2369A is a
silicon epitaxial planar NPN transistor designed for ultra
high speed saturated switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS:
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current IC 200 mA
Peak Collector Current ICM 500 mA
Power Dissipation PD 360 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, T
Thermal Resistance ΘJA 486 °C/W
Thermal Resistance ΘJC 146 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
V
CBO
I
V
CBO
BV
IC=10μA 40 V
CBO
BV
IC=10μA 40 V
CES
BV
IC=10mA 15 V
CEO
BV
IE=10μA 4.5 V
EBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
V
BE(SAT)
hFE V
hFE V
hFE V
hFE V
CB
CB
IC=10mA, IB=1.0mA 200 mV
IC=10mA, IB=1.0mA, TA=125°C 300 mV
IC=30mA, IB=3.0mA 250 mV
IC=100mA, IB=10mA 500 mV
IC=10mA, IB=1.0mA 700 850 mV
IC=30mA, IB=3.0mA 1.15 V
IC=100mA, IB=10mA 1.6 V
CE
CE
CE
CE
(TA=25°C) SYMBOL UNITS
=20V 400 nA
=20V, TA=150°C 30 μA
=1.0V, IC=10mA 40 120
=0.35V, IC=10mA, TA=–55°C 20
=0.4V, IC=30mA 30
=1.0V, IC=100mA 20
40 V
CBO
40 V
CES
15 V
CEO
4.5
EBO
-65 to +200 °C
stg
V
R1 (23-June 2014)
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2N2369A
SILICON
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT V
Cob VCB=5.0V, IE=0, f=140kHz 4.0 pF
ton V
t
V
off
ts V
=10V, IC=10mA, f=100MHz 500 MHz
CE
=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 ns
CC
=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ns
CC
=10V, IC=10mA, IB1=IB2=10mA 13 ns
CC
TO-18 CASE - MECHANICAL OUTLINE
www.centralsemi.com
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (23-June 2014)
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nd
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