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This document describes the EETX4K module which includes a 4K byte EEPROM (Non-Volatile)
memory. The EEPROM memory may be read as either bytes, aligned words or misaligned words. Read
access time is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.
The EEPROM memory is ideal for data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The EEPROM module supports both block erase
(all memory bytes) and sector erase (4 memory bytes). An erased bit reads ‘1’ and a programmed bit reads
‘0’. The high voltage required to program and erase the EEPROM memory isgenerated internally. Itis not
possible to read from the EEPROM block while it is being erased or programmed.
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NOTE:
An EEPROM word (2bytes) must beerased before being programmed. Cumulative
programming of bits within a word is not allowed.
1.1.1 Glossary
Command Write Sequence
A three-step MCU instruction sequence to execute built-in algorithms (including program and erase) on
the EEPROM memory.
1.2 Features
•4K bytes of EEPROM memory divided into 1024 sectors of 4 bytes.
•Automated program and erase algorithm.
cale Semiconductor,
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•Interrupts on EEPROM command completion and command buffer empty.
•Fast sector erase and word program operation.
•2-stage command pipeline.
•Sector erase abort feature for critical interrupt response.
•Flexible protection scheme to prevent accidental program or erase.
•Single power supply for all EEPROM operations including program and erase.
1.3 Modes of Operation
•Program, erase and erase verify operations (please refer to section 4.1 for details).
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Block Guide — S12EETX4KV0 V00.04
Freescale Semiconductor, Inc.
1.4 Block Diagram
A block diagram of the EEPROM module is shown in Figure 1-1.
EETX4K
EEPROM
Interface
Command
Interrupt
Request
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Command Pipeline
cmd2
addr2
data2
Registers
cmd1
addr1
data1
EEPROM
2K * 16 Bits
sector 0
sector 1
cale Semiconductor,
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Oscillator
Clock
Protection
Clock
Divider
Figure 1-1 Module Block Diagram
EECLK
sector 1023
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Section 2External Signal Description
2.1 Overview
The EEPROM module contains no signals that connect off-chip.
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Block Guide — S12EETX4KV0 V00.04
cale Semiconductor,
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13
Block Guide — S12EETX4KV0 V00.04
Section 3 Memory Map and Registers
3.1 Overview
This section describes the memory map and registers for the EEPROM module.
3.2 Module Memory Map
A linear EEPROM memory map is shown in Figure 3-1. The HCS12X architecture actually places the
EEPROM memory addresses between logical addresses $0800 and $1000 with $0800 to $0BFF
representing 1K byte of paged EEPROM memory and $0C00 to $0FFF representing 1K byte of fixed
EEPROM memory. The EPROT register, described in section 3.3.5, can be set to protect the upper region
in the EEPROM memory from accidental program or erase. The EEPROM addresses covered by this
protectable region are shown in the EEPROM memory map. The default protection setting is stored in the
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EEPROM configuration field as described in Table 3-1.
Freescale Semiconductor, Inc.
cale Semiconductor,
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Table 3-1 EEPROM Configuration Field
EEPROM Memory
Address Offset
$_FFC
$_FFD
$_FFE - $_FFF
Size
(bytes)
1
1
2
Description
Reserved
EEPROM Protection byte
Refer to Section 3.3.5 EPROT —
EEPROM Protection Register
Reserved
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