DSP56311 Technical Data, Rev. 8
2-20 Freescale Semiconductor
Specifications
Table 2-12. DRAM Out-of-Page and Refresh Timings, Fifteen Wait States
1,2
No. Characteristics Symbol Expression
3
100 MHz
Unit
Min Max
157 Random read or write cycle time t
RC
16 × T
C
160.0 — ns
158 RAS
assertion to data valid (read) t
RAC
8.25 × TC − 5.7 — 76.8 ns
159 CAS
assertion to data valid (read) t
CAC
4.75 × TC − 5.7 — 41.8 ns
160 Column address valid to data valid (read) t
AA
5.5 × TC − 5.7 — 49.3 ns
161 CAS
deassertion to data not valid (read hold time) t
OFF
0.0 0.0 — ns
162 RAS
deassertion to RAS assertion t
RP
6.25 × TC − 4.0 58.5 — ns
163 RAS
assertion pulse width t
RAS
9.75 × TC − 4.0 93.5 — ns
164 CAS
assertion to RAS deassertion t
RSH
6.25 × TC − 4.0 58.5 — ns
165 RAS
assertion to CAS deassertion t
CSH
8.25 × TC − 4.0 78.5 — ns
166 CAS
assertion pulse width t
CAS
4.75 × TC − 4.0 43.5 — ns
167 RAS
assertion to CAS assertion t
RCD
3.5 × TC ± 233.037.0ns
168 RAS
assertion to column address valid t
RAD
2.75 × TC ± 225.529.5ns
169 CAS
deassertion to RAS assertion t
CRP
7.75 × TC − 4.0 73.5 — ns
170 CAS
deassertion pulse width t
CP
6.25 × TC – 6.0 56.5 — ns
171 Row address valid to RAS
assertion t
ASR
6.25 × TC − 4.0 58.5 — ns
172 RAS
assertion to row address not valid t
RAH
2.75 × TC − 4.0 23.5 — ns
173 Column address valid to CAS
assertion t
ASC
0.75 × TC − 4.0 3.5 — ns
174 CAS
assertion to column address not valid t
CAH
6.25 × TC − 4.0 58.5 — ns
175 RAS
assertion to column address not valid t
AR
9.75 × TC − 4.0 93.5 — ns
176 Column address valid to RAS
deassertion t
RAL
7 × TC − 4.0 66.0 — ns
177 WR
deassertion to CAS assertion t
RCS
5 × TC − 3.8 46.2 — ns
178 CAS
deassertion to WR4 assertion t
RCH
1.75 × TC – 3.7 13.8 — ns
179 RAS
deassertion to WR4 assertion t
RRH
0.25 × TC − 2.0 0.5 — ns
180 CAS
assertion to WR deassertion t
WCH
6 × TC − 4.2 55.8 — ns
181 RAS
assertion to WR deassertion t
WCR
9.5 × TC − 4.2 90.8 — ns
182 WR
assertion pulse width t
WP
15.5 × TC − 4.5 150.5 — ns
183 WR
assertion to RAS deassertion t
RWL
15.75 × TC − 4.3 153.2 — ns
184 WR
assertion to CAS deassertion t
CWL
14.25 × TC − 4.3 138.2 — ns
185 Data valid to CAS
assertion (write) t
DS
8.75 × TC − 4.0 83.5 — ns
186 CAS
assertion to data not valid (write) t
DH
6.25 × TC − 4.0 58.5 — ns
187 RAS
assertion to data not valid (write) t
DHR
9.75 × TC − 4.0 93.5 — ns
188 WR
assertion to CAS assertion t
WCS
9.5 × TC − 4.3 90.7 — ns
189 CAS
assertion to RAS assertion (refresh) t
CSR
1.5 × TC − 4.0 11.0 — ns
190 RAS
deassertion to CAS assertion (refresh) t
RPC
4.75 × TC − 4.0 43.5 — ns
191 RD
assertion to RAS deassertion t
ROH
15.5 × TC − 4.0 151.0 — ns
192 RD
assertion to data valid tGA 14 × TC − 5.7 — 134.3 ns
193 RD
deassertion to data not valid
5
t
GZ
0.0 — ns
194 WR
assertion to data active 0.75 × TC – 1.5 6.0 — ns
195 WR
deassertion to data high impedance 0.25 × T
C
—2.5ns
Notes: 1. The number of wait states for an out-of-page access is specified in the DRAM Control Register.
2. The refresh period is specified in the DRAM Control Register.
3. Use the expression to compute the maximum or minimum value listed (or both if the expression includes ±) .
4. Either t
RCH
or t
RRH
must be satisfied for read cycles.
5. RD
deassertion always occurs after CAS deassertion; therefore, the restricted timing is t
OFF
and not tGZ.