Freescale MWE 61 C 9100 GNR 1 Service Manual

www.DataSheet4U.com

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Document Number: MWE6IC9100N

Rev. 2, 6/2007

Power Amplifiers

The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

Final Application

• Typical GSM Performance: VDD = 26 Volts, I

P

= 100 Watts CW, Full Frequency Band (869- 960 MHz)

out

Power Gain — 33.5 dB Power Added Efficiency — 54%

GSM EDGE Application

• Typical GSM EDGE Performance: V

870 mA, P

Power Gain — 35.5 dB

= 50 Watts Avg., Full Frequency Band (869-960 MHz)

out

= 28 Volts, I

DD

Power Added Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = -63 dBc Spectral Regrowth @ 600 kHz Offset = -81 dBc EVM — 2% rms

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 0 to 50.8 dBm CW (or

1 mW to 120 W CW) P

out

.

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

and Common Source Scattering Parameters

• On- Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

(1)

• Integrated ESD Protection

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

= 120 mA, I

DQ1

= 230 mA, I

DQ1

= 950 mA,

DQ2

=

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

960 MHz, 100 W, 26 V

GSM/GSM EDGE

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 1618-01

TO-270 WB- 14

PLASTIC

MWE6IC9100NR1

CASE 1621-01

TO-270 WB- 14 GULL

PLASTIC

MWE6IC9100GNR1

CASE 1617-01

TO-272 WB- 14

PLASTIC

MWE6IC9100NBR1

NC

1

V

DS1

V

DS1

RF

in

V

GS1

V

GS2

V

DS1

Quiescent Current

Temperature Compensation

(1)

RF

out/VDS2

RF RF

V

GS1

V

GS2

V

DS1

Note: Exposed backside of the package is

Figure 1. Functional Block Diagram

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1977 or AN1987.

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

2 3

NC NC

4

NC

5 6

in

7

in

8

NC

9 10 11

NC

12

(Top View)

the source terminal for the transistors.

14

13

RF

/V

out

/V

out

Figure 2. Pin Connections

DS2

RF Device Data Freescale Semiconductor

1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Storage Temperature Range T

Operating Junction Temperature T

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

R

DSS

GS

stg

J

θ

JC

-0.5, +66 Vdc

-0.5, +6 Vdc

-65 to +200 °C

200 °C

(1,2)

Unit

°C/W

GSM Application Stage 1, 26 Vdc, I (P

= 100 W CW) Stage 2, 26 Vdc, I

out

GSM EDGE Application Stage 1, 28 Vdc, I (P

= 50 W Avg.) Stage 2, 28 Vdc, I

out

DQ1

DQ2

DQ1

DQ2

= 120 mA = 950 mA

= 230 mA = 870 mA

1.82

0.38

1.77

0.44

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22- A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) B (Minimum)

Charge Device Model (per JESD22-C101) III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J-STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 35 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 120 mAdc)

Fixture Gate Quiescent Voltage

(VDD = 26 Vdc, ID = 120 mAdc, Measured in Functional Test)

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

= 25°C unless otherwise noted)

C

I

V

GS(th)

V

GS(Q)

V

GG(Q)

DSS

GSS

— — 10 µAdc

— — 1 µAdc

— — 10 µAdc

1.5 2 3.5 Vdc

— 2.7 — Vdc

6 9.4 12 Vdc

(continued)

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

2

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (T

= 25°C unless otherwise noted) (continued)

C

Characteristic Symbol Min Typ Max Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

I

DSS

— — 10 µAdc

(VDS = 66 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V

= 28 Vdc, VGS = 0 Vdc)

DS

Gate- Source Leakage Current

I

DSS

I

GSS

— — 1 µAdc

— — 10 µAdc

(VGS = 5 Vdc, VDS = 0 Vdc)

Stage 2 — On Characteristics

Gate Threshold Voltage

V

GS(th)

1.5 2 3.5 Vdc

(VDS = 10 Vdc, ID = 290 µAdc)

Gate Quiescent Voltage

V

GS(Q)

— 2.7 — Vdc

(VDS = 26 Vdc, ID = 950 mAdc)

Fixture Gate Quiescent Voltage

V

GG(Q)

6 8.6 12 Vdc

(VDD = 26 Vdc, ID = 950 mAdc, Measured in Functional Test)

Drain-Source On - Voltage

V

DS(on)

0.05 0.4 0.8 Vdc

(VGS = 10 Vdc, ID = 1 Adc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, P

Power Gain G

= 100 W CW, I

out

ps

= 120 mA, I

DQ1

= 950 mA, f = 960 MHz

DQ2

31 33.5 36 dB

Input Return Loss IRL — -15 -10 dB

Power Added Efficiency PAE 52 54 — %

P

@ 1 dB Compression Point, CW P1dB 100 112 — W

out

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V I

= 870 mA, 869 - 894 MHz and 920 - 960 MHz EDGE Modulation

DQ2

Power Gain G

ps

= 28 Vdc, P

DD

= 50 W Avg., I

out

— 35.5 — dB

DQ1

= 230 mA,

Power Added Efficiency PAE — 39 — %

Error Vector Magnitude EVM — 2 — % rms

Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc

Spectral Regrowth at 600 kHz Offset SR2 — -81 — dBc

RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

3

RF

INPUT

C8

1

C11

NC

2

3

NC

4

NC

5

6

7

NC

8

9

10

11

12

NC

V

DD1

+

C17 C22

Z2

Z3

Z1

V

GG1

R1

C15

V

GG2

R2

Z4

C13

DUT

Quiescent Current

Temperature

Compensation

13

14

C1

Z5 Z6

C2

Z16

Z7 Z8 Z9

Z17

C9

C20

C7 C23

C3

C5

C4

+

Z10 Z15Z14

Z11

Z12

V

DD2

RF

OUTPUT

C6

Z13

C14C19C16

C12

C10 C24 C21

C18

V

DD1

Z1 0.089″ x 0.083″ Microstrip Z2 0.157″ x 0.315″ Microstrip Z3 0.157″ x 0.397″ Microstrip Z4 0.139″ x 0.060″ Microstrip Z5 0.024″ x 0.386″ Microstrip Z6 0.352″ x 0.902″ Microstrip Z7 0.039″ x 0.607″ Microstrip Z8 0.555″ x 1.102″ Microstrip

Z10 1.117″ x 0.083″ Microstrip Z11 0.067″ x 0.431″ Microstrip Z12 0.067″ x 0.084″ Microstrip Z13 0.381″ x 0.067″ Microstrip Z14 0.418″ x 0.084″ Microstrip Z15 0.421″ x 0.084″ Microstrip Z16, Z17 2.550″ x 0.157″ Microstrip PCB Taconic TLX8-0300, 0.030″, εr = 2.55

Z9 0.343″ x 0.083″ Microstrip

Figure 3. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Schematic

Table 6. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2 10 pF Chip Capacitors ATC100B100GT500XT ATC

C3, C4, C5 3.9 pF Chip Capacitors ATC100B3R9BT500XT ATC

C6 0.5 pF Chip Capacitor ATC100B0R5BT500XT AT C

C7, C8, C9, C10, C11, C12, C13, C14

C15, C16, C17, C18, C19, C20, C21

C22, C23 470 µF, 63 V Electrolytic Capacitors, Radial 222212018470 Vishay

C24 330 pF Chip Capacitor ATC100B331JT200XT ATC

R1, R2 4.7 kΩ, 1/8 W Chip Resistors WCR08054K7G Welwyn

33 pF Chip Capacitors ATC100B330JT500XT ATC

6.8 µF Chip Capacitors C4532X5R1H685MT TDK

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

4

RF Device Data

Freescale Semiconductor

MWE6IC9100N

Rev. 4

C17

V

DD1

C7

C8

C15

C16

C22

V

DD2

C20

C11

C1

C23

C3

C5

C6

C4

C13

V

GG1

R1

C14

C12

C19

R2

V

GG2

C2

CUT OUT AREA

C21

C24

C10

C9

C18

Figure 4. MWE6IC9100NR1(GNR1)(NBR1) Test Circuit Component Layout

RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

5

TYPICAL CHARACTERISTICS

38 70

G

34

30

26

22

, POWER GAIN (dB)

ps

18

G

14

10

840

860 980900 920

IRL

880

ps

PAE

VDD = 26 Vdc, P

= 120 mA, I

I

DQ1

= 100 W CW

out

= 950 mA

DQ2

940 960

64

58

52

46

40

34

28

f, FREQUENCY (MHz)

Figure 5. Power Gain, Input Return Loss and Power Added

Efficiency versus Frequency @ P

38 52

34

30

26

22

, POWER GAIN (dB)

ps

18

G

14

10

840

G

ps

PAE

VDD = 28 Vdc, P I

= 230 mA, I

DQ1

IRL

880

860 980900 920

f, FREQUENCY (MHz)

= 100 Watts CW

out

= 50 W Avg.

out

= 870 mA

DQ2

940 960

46

40

34

28

22

16

10

Figure 6. Power Gain, Input Return Loss and Power Added

Efficiency versus Frequency @ P

= 50 Watts Avg.

out

0

−4

−8

−12

−16

−20

IRL, INPUT RETURN LOSS (dB)

−24

PAE, POWER ADDED EFFICIENCY (%)

−28

−4

−8

−12

−16

−20

−24

IRL, INPUT RETURN LOSS (dB)

−28

PAE, POWER ADDED EFFICIENCY (%)

−30

36

I

= 1420 mA

DQ2

35

I

= 1190 mA

DQ2

I

DQ2

= 950 mA

34

33

, POWER GAIN (dB)

ps

I

G

= 590 mA

DQ2

32

I

= 470 mA

DQ2

VDD = 26 Vdc f = 945 MHz

31

1

P

out

10 200

, OUTPUT POWER (WATTS) CW

100

Figure 7. Power Gain versus Output Power

@ I

= 120 mA

DQ1

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

6

36

I

= 180 mA

I

DQ1

= 150 mA

DQ1

35

34

I

= 120 mA

DQ1

33

I

= 90 mA

, POWER GAIN (dB)

ps

G

DQ1

32

31

I

= 60 mA

DQ1

30

1

P

out

10 200

, OUTPUT POWER (WATTS) CW

Figure 8. Power Gain versus Output Power

@ I

= 950 mA

DQ2

Freescale Semiconductor

VDD = 26 Vdc f = 945 MHz

100

RF Device Data

TYPICAL CHARACTERISTICS

,

(

)

−10 VDD = 26 Vdc I

−20

= 120 mA, I

DQ1

f1 = 945 MHz, f2 = 945.1 MHz 100 kHz Tone Spacing

−30

= 950 mA

DQ2

3rd Order

−40

5th Order

−50

−60

7th Order

−70

IMD, INTERMODULATION DISTORTION (dBc)

−80

110

P

, OUTPUT POWER (WATTS) PEP

out

100

Figure 9. Intermodulation Distortion Products

versus Output Power

58

57

56

P3dB = 51.5 dBm (140 W)

55

54

P1dB = 50.9 dBm (123 W)

53

52

51

, OUTPUT POWER (dBc)

out

50

P

49

48

14 1715

16 18 19

P6dB = 51.95 dBm (156 W)

VDD = 26 Vdc, I

DQ1

Pulsed CW, 12 µsec(on), 1% Duty Cycle f = 945 MHz

20 21 22 23 24

Pin, INPUT POWER (dBm)

Ideal

= 120 mA, I

= 950 mA

DQ2

Actual

Figure 11. Pulsed CW Output Power versus

Input Power

40

38

VDD = 26 Vdc, I I

= 950 mA, f = 880 MHz

DQ2

DQ1

= 120 mA

−30_C

25_C

36

G

34

ps

TC = −30_C

85_C

25_C

32

, POWER GAIN (dB)

ps

30

G

28

85_C

PAE

26 0

101

P

, OUTPUT POWER (WATTS) CW

out

100

Figure 13. Power Gain and Power Added

Efficiency versus Output Power @ 880 MHz

−10 VDD = 26 Vdc, P I

DQ2

−20 (f1 + f2)/2 = Center Frequency of 945 MHz

−30

−40

−50

−60

−70

IMD, INTERMODULATION DISTORTION (dBc)

−80

200

0.1 10

38

36

G

ps

34

32

30

, POWER GAIN (dB)

ps

G

28

PAE

26

25

Figure 12. Power Gain and Power Added

Efficiency versus Output Power @ 945 MHz

70

60

50

40

30

20

10

300

34

33

32

31

, POWER GAIN (dB)

30

ps

G

29

PAE, POWER ADDED EFFICIENCY (%)

28

0 150

Figure 14. Power Gain versus Output Power

= 100 W (PEP), I

= 1 A, Two− Tone Measurements

out

= 150 mA

DQ1

3rd Order

5th Order

7th Order

1

TWO−TONE SPACING (MHz)

Figure 10. Intermodulation Distortion

Products versus Tone Spacing

TC = −30_C

25_C

85_C

VDD = 26 Vdc I

= 120 mA

DQ1

I

= 950 mA

DQ2

f = 945 MHz

101

P

, OUTPUT POWER (WATTS) CW

out

24 V

VDD = 20 V

50

P

, OUTPUT POWER (WATTS) CW

out

100

−30_C

25_C

85_C

100

32 V

I

= 120 mA

DQ1

I

= 950 mA

DQ2

f = 945 MHz

100

60

%

50

40

30

20

POWER ADDED EFFICIENCY

10

PAE

0

300

200

RF Device Data Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

7

Freescale MWE 61 C 9100 GNR 1 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual