Freescale MRFG35010NT1 User Manual

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Freescale Semiconductor

Technical Data

MRFG35010NT1 replaced by MRFG35010ANT1.

Document Number: MRFG35010N

Rev. 7, 1/2008

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.

• Typical W-CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)

Output Power — 900 mW
Power Gain — 10 dB

N

Efficiency — 28%

• 9 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

RMATI

MRFG35010NT1

3.5 GHz, 9 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Gate- Source Voltage V

RF Input Power P

HIVE INF

Storage Temperature Range T

Channel Temperature

Operating Case Temperature Range T

Table 2. Thermal Characteristics

AR

Thermal Resistance, Junction to Case R

Table 3. Moisture Sensitivity Level

Per JESD 22-A113, IPC/JEDEC J-STD - 020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

(1)

Characteristic Symbol Value Unit

Test Methodology Rating Package Peak Temperature Unit

DSS

P

GS

stg

T

ch

θ

D

in

C

JC

15 Vdc

(2)

22.7

(2)

0.15

-5 Vdc

33 dBm

-65 to +150 °C

175 °C

-20 to +85 °C

(2)

6.6

W

W/°C

ARCHIVE INFORMATION

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35010NT1

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Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

Off State Leakage Current

(VGS = - 0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 12 Vdc, VGS = -1.9 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

Gate- Source Cut - off Voltage

(VDS = 3.5 Vdc, IDS = 15 mA)

Quiescent Gate Voltage

(VDS = 12 Vdc, IDQ = 180 mA)

Power Gain

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

N

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 180 mA, P
f = 3.55 GHz)

Adjacent Channel Power Ratio

(VDD = 12 Vdc, P
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)

RMATI

= 900 mW Avg., IDQ = 180 mA,

out

(TC = 25°C unless otherwise noted)

= 900 mW Avg.,

out

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

G

ps

P1dB — 9 — W

h

D

ACPR — -43 -40 dBc

— 2.9 — Adc

— < 1.0 100 µAdc

— 0.1 1.0 mAdc

— 2.0 15 mAdc

-1.2 -1.0 - 0.7 Vdc

-1.2 -0.95 -0.7 Vdc

9.0 10 — dB

23 28 — %

HIVE INF

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MRFG35010NT1

2

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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BIAS

C11

C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12

C4

C19

V

SUPPLY

Z9

RF

INPUT

Z1 Z2 Z3 Z5 Z6 Z7 Z10 Z11 Z13 Z14 Z17

C1

Z4

C3

C2

R1

Z8

Z12

Z15 Z16

C22 C21

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Z1 0.045″ x 0.689″ Microstrip
Z2 0.045″ x 0.089″ Microstrip
Z3 0.020″ x 0.360″ Microstrip
Z4 0.045″ x 0.029″ Microstrip
Z5 0.045″ x 0.061″ Microstrip
Z6 0.045″ x 0.055″ Microstrip
Z7 0.300″ x 0.125″ Microstrip
Z8, Z10 0.146″ x 0.070″ Microstrip
Z9 0.025″ x 0.485″ Microstrip

Z11 0.400″ x 0.215″ Microstrip
Z12 0.025″ x 0.497″ Microstrip
Z13 0.025″ x 0.271″ Microstrip
Z14 0.025″ x 0.363″ Microstrip
Z15 0.025″ x 0.041″ Microstrip
Z16 0.045″ x 0.050″ Microstrip
Z17 0.045″ x 0.467″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5

RMATI

Figure 1. 3.5 GHz Test Circuit Schematic

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX

C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX

C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX

C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX

C5, C18 10 pF Chip Capacitors 100A100JP150X ATC

C6, C17 100 pF Chip Capacitors 100A101JP150X ATC

HIVE INF

C7, C16 100 pF Chip Capacitors 100B101JP500X ATC

C8, C15 1000 pF Chip Capacitors 100B102JP50X ATC

C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C10, C13 39K pF Chip Capacitors 200B393KP50X ATC

AR

C11, C12 10 µF Chip Capacitors GRM55DR61H106KA88B Kemet

R1 47 Ω Chip Resistor D55342M07B47JOR Newark

RF

OUTPUT

C20

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35010NT1

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C11

C10 C9

C14 C13

C12

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RMATI

C1

C4

C6

C5

C2

C8

C7

C3

C15

C16

C17

C18

C19

R1

C20

C22 C21

MRFG35010XX, Rev. 5

HIVE INF

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MRFG35010NT1

4

Figure 2. 3.5 GHz Test Circuit Component Layout

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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TYPICAL CHARACTERISTICS

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RMATI

0

IRL

−10 −10

VDS = 12 Vdc, IDQ = 180 mA

−20
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA

Γ

= 0.898é−134.03_, ΓL = 0.828é−140.67_

S

−30 −30

−40

INPUT RETURN LOSS (dB)IRL,

ACPR

−50 −50

−60

0.1

P

, OUTPUT POWER (WATTS)

out

Figure 3. W- CDMA ACPR and Input Return

Loss versus Output Power

12.5

VDS = 12 Vdc, IDQ = 180 mA

12

11.5

11

10.5

, TRANSDUCER GAIN (dB)

T

G

10

f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_

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T

1

PAE

10

0

−20

−40

−60

60

50

40

30

20

10

ACPR (dBc)

, POWER ADDED EFFICIENCY (%)PAE

HIVE INF

NOTE: All data is referenced to package lead interface. ΓS and Γ

All data is generated from load pull, not from the test circuit shown.

AR

9.5

0.1

P

, OUTPUT POWER (WATTS)

out

Figure 4. Transducer Gain and Power Added

Efficiency versus Output Power

1

are the impedances presented to the DUT.

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0

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RF Device Data
Freescale Semiconductor

MRFG35010NT1

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Table 6. Class AB Common Source S - Parameters at V

f

S

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GHz

0.5 0.946 - 177.11 4.710 82.28 0.016 8.19 0.759 - 179.39

0.55 0.945 - 178.28 4.303 80.79 0.016 7.57 0.758 - 179.99

0.6 0.944 -179.44 3.963 79.23 0.016 7.60 0.758 179.39

0.65 0.945 179.50 3.674 77.69 0.016 7.44 0.758 178.74

0.7 0.945 178.60 3.427 76.28 0.016 7.44 0.757 177.98

0.75 0.944 177.66 3.211 74.83 0.016 7.21 0.757 177.28

0.8 0.945 176.74 3.023 73.24 0.017 7.65 0.756 176.57

0.85 0.945 175.95 2.853 71.74 0.017 7.16 0.756 175.75

0.9 0.944 175.17 2.705 70.36 0.017 7.34 0.756 174.99

0.95 0.945 174.36 2.570 68.88 0.017 7.31 0.755 174.18

1 0.945 173.63 2.447 67.47 0.017 7.08 0.755 173.33

1.05 0.944 172.90 2.337 66.06 0.017 7.29 0.756 172.51

N

1.1 0.944 172.09 2.234 64.52 0.017 7.56 0.756 171.82

1.15 0.944 171.29 2.139 63.11 0.017 7.46 0.756 171.01

1.2 0.944 170.57 2.052 61.73 0.017 7.43 0.757 170.22

1.25 0.943 169.71 1.971 60.26 0.017 7.47 0.757 169.52

1.3 0.944 168.85 1.894 58.81 0.017 7.28 0.757 168.83

1.35 0.940 168.20 1.823 57.49 0.017 7.56 0.755 168.39

1.4 0.946 167.07 1.754 56.13 0.017 7.92 0.762 167.55

1.45 0.943 166.35 1.691 54.75 0.018 7.59 0.759 167.32

RMATI

1.5 0.944 163.30 1.626 53.36 0.017 7.06 0.762 169.20

1.55 0.943 162.54 1.573 52.16 0.017 7.24 0.763 168.75

1.6 0.942 161.81 1.523 50.87 0.017 7.48 0.764 168.22

1.65 0.945 161.17 1.474 49.56 0.018 7.46 0.765 167.71

1.7 0.946 160.55 1.429 48.35 0.017 7.46 0.766 167.18

1.75 0.945 160.01 1.387 47.14 0.018 7.84 0.767 166.73

1.8 0.945 159.48 1.348 45.88 0.018 7.89 0.767 166.15

1.85 0.947 159.00 1.310 44.70 0.018 7.97 0.768 165.58

1.9 0.946 158.52 1.274 43.55 0.018 7.87 0.770 165.10

1.95 0.945 158.06 1.240 42.30 0.018 7.89 0.769 164.54

HIVE INF

AR

2 0.948 157.71 1.209 41.23 0.018 7.61 0.771 164.05

2.05 0.947 157.30 1.179 40.16 0.018 7.78 0.772 163.59

2.1 0.947 156.92 1.152 39.09 0.018 7.65 0.773 163.12

2.15 0.948 156.58 1.127 37.97 0.018 7.40 0.773 162.56

2.2 0.948 156.32 1.102 36.90 0.019 7.22 0.773 162.01

2.25 0.948 156.04 1.079 35.82 0.019 6.98 0.775 161.53

2.3 0.949 155.73 1.058 34.70 0.019 7.24 0.775 161.05

2.35 0.949 155.33 1.037 33.62 0.019 7.52 0.775 160.43

2.4 0.948 154.99 1.019 32.54 0.019 7.60 0.776 159.99

2.45 0.948 154.57 1.002 31.44 0.019 7.49 0.777 159.53

2.5 0.948 154.13 0.986 30.35 0.019 7.69 0.776 158.91

2.55 0.946 153.68 0.971 29.28 0.019 8.05 0.777 158.40

2.6 0.946 153.15 0.957 28.12 0.020 8.01 0.777 157.88

2.65 0.946 152.54 0.943 26.91 0.020 8.01 0.776 157.34

2.7 0.945 151.98 0.930 25.73 0.020 7.82 0.777 156.80

2.75 0.943 151.22 0.918 24.52 0.021 7.27 0.778 156.36

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

= 12 Vdc, IDQ = 180 mA

DS

S

21

S

12

S

22

ARCHIVE INFORMATION

MRFG35010NT1

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RF Device Data

Freescale Semiconductor

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Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued)

S

11

GHz

2.8 0.943 150.66 0.906 23.27 0.021 6.42 0.776 155.80

2.85 0.943 149.88 0.894 22.02 0.022 5.21 0.777 155.28

2.9 0.942 149.16 0.883 20.80 0.021 4.17 0.778 154.81

2.95 0.942 148.32 0.872 19.56 0.021 4.03 0.778 154.25

3 0.943 147.41 0.862 18.28 0.021 3.53 0.778 153.67

3.05 0.942 146.51 0.853 16.96 0.022 3.11 0.780 153.18

3.1 0.940 145.45 0.842 15.64 0.022 2.65 0.780 152.64

3.15 0.940 144.41 0.833 14.29 0.022 2.43 0.779 152.04

3.2 0.941 143.33 0.823 13.00 0.022 2.48 0.782 151.43

3.25 0.938 142.25 0.814 11.67 0.022 2.48 0.781 150.92

3.3 0.939 141.15 0.804 10.32 0.022 2.08 0.781 150.33

3.35 0.939 140.02 0.795 8.97 0.022 1.99 0.782 149.74

N

3.4 0.938 138.89 0.785 7.61 0.022 2.11 0.783 149.19

3.45 0.938 137.88 0.776 6.26 0.023 2.05 0.782 148.72

3.5 0.939 136.68 0.767 4.96 0.023 1.79 0.783 147.97

3.55 0.938 135.63 0.757 3.67 0.023 1.56 0.785 147.40

3.6 0.938 134.63 0.748 2.34 0.024 1.02 0.783 146.88

3.65 0.939 133.60 0.739 1.04 0.024 0.44 0.783 146.20

3.7 0.938 132.68 0.729 - 0.25 0.024 -0.54 0.785 145.61

3.75 0.937 131.84 0.720 -1.47 0.024 - 1.30 0.785 145.17

RMATI

3.8 0.937 130.92 0.711 - 2.69 0.024 - 1.98 0.785 144.52

3.85 0.938 130.07 0.702 -3.89 0.024 - 2.38 0.786 143.87

3.9 0.938 129.29 0.694 - 5.07 0.024 -2.22 0.787 143.24

3.95 0.939 128.60 0.686 -6.23 0.024 - 2.00 0.787 142.61

4 0.939 127.88 0.678 -7.34 0.025 - 1.80 0.788 141.94

4.05 0.939 127.23 0.671 - 8.46 0.025 - 2.04 0.789 141.34

4.1 0.941 126.66 0.664 - 9.57 0.025 -2.17 0.789 140.69

4.15 0.941 126.23 0.658 -10.65 0.025 - 2.15 0.788 140.01

4.2 0.940 125.73 0.651 -11.72 0.026 - 2.48 0.789 139.31

4.25 0.939 125.28 0.645 -12.82 0.026 - 2.81 0.789 138.65

HIVE INF

4.3 0.940 124.85 0.640 - 13.86 0.026 - 2.79 0.788 137.91

4.35 0.940 124.45 0.635 -14.92 0.027 - 2.73 0.789 137.16

4.4 0.939 124.01 0.630 - 16.00 0.027 - 3.22 0.789 136.45

4.45 0.939 123.63 0.627 -17.01 0.028 - 3.26 0.788 135.67

AR

4.5 0.939 123.27 0.623 - 18.03 0.028 - 3.64 0.788 134.88

4.55 0.937 122.84 0.620 -19.03 0.029 - 3.74 0.789 134.16

4.6 0.937 122.32 0.619 - 20.17 0.029 - 4.57 0.788 133.36

4.65 0.937 121.88 0.618 -21.26 0.030 - 5.02 0.788 132.50

4.7 0.936 121.36 0.617 - 22.45 0.030 - 6.01 0.788 131.67

4.75 0.935 120.72 0.615 -23.68 0.031 - 7.22 0.787 130.83

4.8 0.935 120.04 0.614 - 24.90 0.031 - 7.64 0.786 129.91

4.85 0.934 119.35 0.613 -26.12 0.031 - 8.05 0.786 129.03

4.9 0.932 118.49 0.613 - 27.41 0.031 - 8.39 0.786 128.20

4.95 0.931 117.69 0.614 -28.72 0.032 - 8.32 0.785 127.24

5 0.929 116.74 0.614 -30.05 0.033 - 8.48 0.786 126.32

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

S

21

S

12

S

22

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35010NT1

7

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PACKAGE DIMENSIONS

N

RMATI

B

ZONE V

ZONE W

A

F

3

21

D

4

N
K

Q

H

4

1

3

G

ZONE X

R

0.35 (0.89) X 45 5

U

2

S

L

C

__

"

P

YY

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.

2. CONTROLLING DIMENSION: INCH

3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. SOURCE

VIEW Y- Y

CASE 466- 03

0.095

2.41

10 DRAFT

_

E

0.115

2.92

ZONE V 0.000 0.021 0.00 0.53

ZONE W 0.000 0.010 0.00 0.25

ZONE X 0.000 0.010 0.00 0.25

0.146

3.71

0.115

2.92

0.020

0.51

SOLDER FOOTPRINT

DIM MIN MAX MIN MAX

A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
J 0.160 0.180 4.06 4.57
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31

MILLIMETERSINCHES

inches

mm

ISSUE D
PLD- 1.5

PLASTIC

HIVE INF

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MRFG35010NT1

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ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

7 Jan. 2008 • Listed replacement part, p. 1

• Added Revision History, p. 9

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RMATI

HIVE INF

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ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35010NT1

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How to Reach Us:

Home Page:

www.freescale.com

Web Support:

http://www.freescale.com/support

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RMATI

Technical Information Center
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ARCHIVE INFORMATION

MRFG35010NT1

Document Number: MRFG35010N
Rev. 7, 1/2008

10

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RF Device Data

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