C
O
O
Freescale Semiconductor
Technical Data
MRFG35010NT1 replaced by MRFG35010ANT1.
Document Number: MRFG35010N
Rev. 7, 1/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.
• Typical W-CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 900 mW
Power Gain — 10 dB
N
Efficiency — 28%
• 9 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
RMATI
MRFG35010NT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Gate- Source Voltage V
RF Input Power P
HIVE INF
Storage Temperature Range T
Channel Temperature
Operating Case Temperature Range T
Table 2. Thermal Characteristics
AR
Thermal Resistance, Junction to Case R
Table 3. Moisture Sensitivity Level
Per JESD 22-A113, IPC/JEDEC J-STD - 020 1 260 °C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
(1)
Characteristic Symbol Value Unit
Test Methodology Rating Package Peak Temperature Unit
DSS
P
GS
stg
T
ch
θ
D
in
C
JC
15 Vdc
(2)
22.7
(2)
0.15
-5 Vdc
33 dBm
-65 to +150 °C
175 °C
-20 to +85 °C
(2)
6.6
W
W/°C
ARCHIVE INFORMATION
°C/W
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010NT1
1
C
O
O
Table 4. Electrical Characteristics
Characteristic Symbol Min Typ Max Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
Off State Drain Current
(VDS = 12 Vdc, VGS = -1.9 Vdc)
Off State Current
(VDS = 28.5 Vdc, VGS = -2.5 Vdc)
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
Quiescent Gate Voltage
(VDS = 12 Vdc, IDQ = 180 mA)
Power Gain
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
N
Output Power, 1 dB Compression Point
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Drain Efficiency
(VDD = 12 Vdc, IDQ = 180 mA, P
f = 3.55 GHz)
Adjacent Channel Power Ratio
(VDD = 12 Vdc, P
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
RMATI
= 900 mW Avg., IDQ = 180 mA,
out
(TC = 25°C unless otherwise noted)
= 900 mW Avg.,
out
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P1dB — 9 — W
h
D
ACPR — -43 -40 dBc
— 2.9 — Adc
— < 1.0 100 µAdc
— 0.1 1.0 mAdc
— 2.0 15 mAdc
-1.2 -1.0 - 0.7 Vdc
-1.2 -0.95 -0.7 Vdc
9.0 10 — dB
23 28 — %
HIVE INF
AR
MRFG35010NT1
2
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
C
O
O
V
BIAS
C11
C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12
C4
C19
V
SUPPLY
Z9
RF
INPUT
Z1 Z2 Z3 Z5 Z6 Z7 Z10 Z11 Z13 Z14 Z17
C1
Z4
C3
C2
R1
Z8
Z12
Z15 Z16
C22 C21
N
Z1 0.045″ x 0.689″ Microstrip
Z2 0.045″ x 0.089″ Microstrip
Z3 0.020″ x 0.360″ Microstrip
Z4 0.045″ x 0.029″ Microstrip
Z5 0.045″ x 0.061″ Microstrip
Z6 0.045″ x 0.055″ Microstrip
Z7 0.300″ x 0.125″ Microstrip
Z8, Z10 0.146″ x 0.070″ Microstrip
Z9 0.025″ x 0.485″ Microstrip
Z11 0.400″ x 0.215″ Microstrip
Z12 0.025″ x 0.497″ Microstrip
Z13 0.025″ x 0.271″ Microstrip
Z14 0.025″ x 0.363″ Microstrip
Z15 0.025″ x 0.041″ Microstrip
Z16 0.045″ x 0.050″ Microstrip
Z17 0.045″ x 0.467″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5
RMATI
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX
C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX
C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX
C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX
C5, C18 10 pF Chip Capacitors 100A100JP150X ATC
C6, C17 100 pF Chip Capacitors 100A101JP150X ATC
HIVE INF
C7, C16 100 pF Chip Capacitors 100B101JP500X ATC
C8, C15 1000 pF Chip Capacitors 100B102JP50X ATC
C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet
C10, C13 39K pF Chip Capacitors 200B393KP50X ATC
AR
C11, C12 10 µF Chip Capacitors GRM55DR61H106KA88B Kemet
R1 47 Ω Chip Resistor D55342M07B47JOR Newark
RF
OUTPUT
C20
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRFG35010NT1
3