Freescale MRFG35010NT1 User Manual

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Freescale Semiconductor

Technical Data

MRFG35010NT1 replaced by MRFG35010ANT1.

Document Number: MRFG35010N

Rev. 7, 1/2008

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.

• Typical W-CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)

Output Power — 900 mW
Power Gain — 10 dB

N

Efficiency — 28%

• 9 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

RMATI

MRFG35010NT1

3.5 GHz, 9 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Gate- Source Voltage V

RF Input Power P

HIVE INF

Storage Temperature Range T

Channel Temperature

Operating Case Temperature Range T

Table 2. Thermal Characteristics

AR

Thermal Resistance, Junction to Case R

Table 3. Moisture Sensitivity Level

Per JESD 22-A113, IPC/JEDEC J-STD - 020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

(1)

Characteristic Symbol Value Unit

Test Methodology Rating Package Peak Temperature Unit

DSS

P

GS

stg

T

ch

θ

D

in

C

JC

15 Vdc

(2)

22.7

(2)

0.15

-5 Vdc

33 dBm

-65 to +150 °C

175 °C

-20 to +85 °C

(2)

6.6

W

W/°C

ARCHIVE INFORMATION

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35010NT1

1

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Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

Off State Leakage Current

(VGS = - 0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 12 Vdc, VGS = -1.9 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

Gate- Source Cut - off Voltage

(VDS = 3.5 Vdc, IDS = 15 mA)

Quiescent Gate Voltage

(VDS = 12 Vdc, IDQ = 180 mA)

Power Gain

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

N

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 180 mA, P
f = 3.55 GHz)

Adjacent Channel Power Ratio

(VDD = 12 Vdc, P
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)

RMATI

= 900 mW Avg., IDQ = 180 mA,

out

(TC = 25°C unless otherwise noted)

= 900 mW Avg.,

out

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

G

ps

P1dB — 9 — W

h

D

ACPR — -43 -40 dBc

— 2.9 — Adc

— < 1.0 100 µAdc

— 0.1 1.0 mAdc

— 2.0 15 mAdc

-1.2 -1.0 - 0.7 Vdc

-1.2 -0.95 -0.7 Vdc

9.0 10 — dB

23 28 — %

HIVE INF

AR

MRFG35010NT1

2

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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BIAS

C11

C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12

C4

C19

V

SUPPLY

Z9

RF

INPUT

Z1 Z2 Z3 Z5 Z6 Z7 Z10 Z11 Z13 Z14 Z17

C1

Z4

C3

C2

R1

Z8

Z12

Z15 Z16

C22 C21

N

Z1 0.045″ x 0.689″ Microstrip
Z2 0.045″ x 0.089″ Microstrip
Z3 0.020″ x 0.360″ Microstrip
Z4 0.045″ x 0.029″ Microstrip
Z5 0.045″ x 0.061″ Microstrip
Z6 0.045″ x 0.055″ Microstrip
Z7 0.300″ x 0.125″ Microstrip
Z8, Z10 0.146″ x 0.070″ Microstrip
Z9 0.025″ x 0.485″ Microstrip

Z11 0.400″ x 0.215″ Microstrip
Z12 0.025″ x 0.497″ Microstrip
Z13 0.025″ x 0.271″ Microstrip
Z14 0.025″ x 0.363″ Microstrip
Z15 0.025″ x 0.041″ Microstrip
Z16 0.045″ x 0.050″ Microstrip
Z17 0.045″ x 0.467″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5

RMATI

Figure 1. 3.5 GHz Test Circuit Schematic

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX

C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX

C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX

C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX

C5, C18 10 pF Chip Capacitors 100A100JP150X ATC

C6, C17 100 pF Chip Capacitors 100A101JP150X ATC

HIVE INF

C7, C16 100 pF Chip Capacitors 100B101JP500X ATC

C8, C15 1000 pF Chip Capacitors 100B102JP50X ATC

C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C10, C13 39K pF Chip Capacitors 200B393KP50X ATC

AR

C11, C12 10 µF Chip Capacitors GRM55DR61H106KA88B Kemet

R1 47 Ω Chip Resistor D55342M07B47JOR Newark

RF

OUTPUT

C20

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35010NT1

3