Freescale MRFG35010ANT1 Technical Data

Freescale Semiconductor

Technical Data

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.

• Typical Single- Carrier W-CDMA Performance: V

130 mA, P
PAR = 8.5 dB @ 0.01% Probability on CCDF.

= 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,

out

Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth

• 9 Watts P1dB @ 3550 MHz, CW

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

= 12 Volts, IDQ =

DD

Document Number: MRFG35010AN

Rev. 2, 6/2009

MRFG35010ANT1

3.5 GHz, 9 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

RF Input Power P

Storage Temperature Range T

Channel Temperature

(1)

DSS

GS

stg

T

ch

in

15 Vdc

-5 Vdc

33 dBm

-65 to +150 °C

175 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 77°C, 1 W CW

R

θ

JC

(2)

6.5 °C/W

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113, IPC/JEDEC J- STD-020 3 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
Select Documentation/Application Notes - AN1955.

.

Unit

 Freescale Semiconductor, Inc., 2006, 2008- 2009. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

1

Table 5. Electrical Characteristics

Characteristic

Saturated Drain Current

(V

= 3.5 Vdc, VGS = 0 Vdc)

DS

Off State Leakage Current

= - 0.4 Vdc, VDS = 0 Vdc)

(V

GS

Off State Drain Current

(V

= 12 Vdc, VGS = - 2.2 Vdc)

DS

Off State Current

(V

= 28.5 Vdc, VGS = - 2.5 Vdc)

DS

Gate-Source Cut - off Voltage

(V

= 3.5 Vdc, IDS = 15 mA)

DS

Quiescent Gate Voltage

(V

= 12 Vdc, IDQ = 180 mA)

DS

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 130 mA, P

(TA = 25°C unless otherwise noted)

Symbol Min Typ Max Unit

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

— 2.9 — Adc

— < 1 100 µAdc

— 0.1 1 mAdc

— 2 15 mAdc

-1.2 -1.0 - 0.7 Vdc

-1.2 - 0.95 - 0.7 Vdc

= 1 W Avg., f = 3550 MHz, Single- Carrier

out

W- CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Drain Efficiency

G

ps

h

D

9 10 — dB

23 25 — %

Adjacent Channel Power Ratio ACPR — -43 -40 dBc

Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V

Output Power, 1 dB Compression Point, CW

= 12 Vdc, IDQ = 130 mA, f = 3550 MHz

DD

P

1dB

— 9 — W

MRFG35010ANT1

2

RF Device Data

Freescale Semiconductor

V

BIAS

C11

C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12

C4

C19

V

SUPPLY

Z9

RF

INPUT

Z1 Z2 Z3 Z5 Z6 Z7 Z10 Z11 Z13 Z14 Z17

C1

Z4

C3

C2

Z1 0.045″ x 0.689″ Microstrip
Z2 0.045″ x 0.089″ Microstrip
Z3 0.020″ x 0.360″ Microstrip
Z4 0.045″ x 0.029″ Microstrip
Z5 0.045″ x 0.061″ Microstrip
Z6 0.045″ x 0.055″ Microstrip
Z7 0.300″ x 0.125″ Microstrip
Z8, Z10 0.146″ x 0.070″ Microstrip
Z9 0.025″ x 0.485″ Microstrip

R1

Z8

Z12

Z15 Z16

C22 C21

Z11 0.400″ x 0.215″ Microstrip
Z12 0.025″ x 0.497″ Microstrip
Z13 0.025″ x 0.271″ Microstrip
Z14 0.025″ x 0.363″ Microstrip
Z15 0.025″ x 0.041″ Microstrip
Z16 0.045″ x 0.050″ Microstrip
Z17 0.045″ x 0.467″ Microstrip
PCB Rogers 4350, 0.020″, ε

= 3.5

r

C20

Figure 1. 3.5 GHz Test Circuit Schematic

Table 6. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX

C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX

C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX

C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX

C5, C18 10 pF Chip Capacitors 100A100JP150XT AT C

C6, C17 100 pF Chip Capacitors 100A101JP150XT AT C

C7, C16 100 pF Chip Capacitors 100B101JP500XT AT C

C8, C15 1000 pF Chip Capacitors 100B102JP50XT ATC

C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C10, C13 39K pF Chip Capacitors 200B393KP50XT ATC

C11, C12 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

R1 50 Ω Chip Resistor P51ETR-ND Newark

RF

OUTPUT

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

3

C11

C10 C9

C14 C13

C12

C1

C4

C6

C5

C2

C8

C7

C3

C15

C16

C17

C18

C19

R1

C20

C22 C21

MRFG35010XX, Rev. 5

MRFG35010ANT1

4

Figure 2. 3.5 GHz Test Circuit Component Layout

RF Device Data

Freescale Semiconductor