Freescale MRFG35010ANT1 Technical Data

Freescale Semiconductor

Technical Data

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.

• Typical Single- Carrier W-CDMA Performance: V

130 mA, P
PAR = 8.5 dB @ 0.01% Probability on CCDF.

= 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,

out

Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth

• 9 Watts P1dB @ 3550 MHz, CW

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

= 12 Volts, IDQ =

DD

Document Number: MRFG35010AN

Rev. 2, 6/2009

MRFG35010ANT1

3.5 GHz, 9 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

RF Input Power P

Storage Temperature Range T

Channel Temperature

(1)

DSS

GS

stg

T

ch

in

15 Vdc

-5 Vdc

33 dBm

-65 to +150 °C

175 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 77°C, 1 W CW

R

θ

JC

(2)

6.5 °C/W

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113, IPC/JEDEC J- STD-020 3 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
Select Documentation/Application Notes - AN1955.

.

Unit

 Freescale Semiconductor, Inc., 2006, 2008- 2009. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

1

Table 5. Electrical Characteristics

Characteristic

Saturated Drain Current

(V

= 3.5 Vdc, VGS = 0 Vdc)

DS

Off State Leakage Current

= - 0.4 Vdc, VDS = 0 Vdc)

(V

GS

Off State Drain Current

(V

= 12 Vdc, VGS = - 2.2 Vdc)

DS

Off State Current

(V

= 28.5 Vdc, VGS = - 2.5 Vdc)

DS

Gate-Source Cut - off Voltage

(V

= 3.5 Vdc, IDS = 15 mA)

DS

Quiescent Gate Voltage

(V

= 12 Vdc, IDQ = 180 mA)

DS

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 130 mA, P

(TA = 25°C unless otherwise noted)

Symbol Min Typ Max Unit

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

— 2.9 — Adc

— < 1 100 µAdc

— 0.1 1 mAdc

— 2 15 mAdc

-1.2 -1.0 - 0.7 Vdc

-1.2 - 0.95 - 0.7 Vdc

= 1 W Avg., f = 3550 MHz, Single- Carrier

out

W- CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Drain Efficiency

G

ps

h

D

9 10 — dB

23 25 — %

Adjacent Channel Power Ratio ACPR — -43 -40 dBc

Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V

Output Power, 1 dB Compression Point, CW

= 12 Vdc, IDQ = 130 mA, f = 3550 MHz

DD

P

1dB

— 9 — W

MRFG35010ANT1

2

RF Device Data

Freescale Semiconductor

V

BIAS

C11

C10 C9 C8 C7 C6 C5 C18 C17 C16 C15 C14 C13 C12

C4

C19

V

SUPPLY

Z9

RF

INPUT

Z1 Z2 Z3 Z5 Z6 Z7 Z10 Z11 Z13 Z14 Z17

C1

Z4

C3

C2

Z1 0.045″ x 0.689″ Microstrip
Z2 0.045″ x 0.089″ Microstrip
Z3 0.020″ x 0.360″ Microstrip
Z4 0.045″ x 0.029″ Microstrip
Z5 0.045″ x 0.061″ Microstrip
Z6 0.045″ x 0.055″ Microstrip
Z7 0.300″ x 0.125″ Microstrip
Z8, Z10 0.146″ x 0.070″ Microstrip
Z9 0.025″ x 0.485″ Microstrip

R1

Z8

Z12

Z15 Z16

C22 C21

Z11 0.400″ x 0.215″ Microstrip
Z12 0.025″ x 0.497″ Microstrip
Z13 0.025″ x 0.271″ Microstrip
Z14 0.025″ x 0.363″ Microstrip
Z15 0.025″ x 0.041″ Microstrip
Z16 0.045″ x 0.050″ Microstrip
Z17 0.045″ x 0.467″ Microstrip
PCB Rogers 4350, 0.020″, ε

= 3.5

r

C20

Figure 1. 3.5 GHz Test Circuit Schematic

Table 6. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX

C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX

C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX

C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX

C5, C18 10 pF Chip Capacitors 100A100JP150XT AT C

C6, C17 100 pF Chip Capacitors 100A101JP150XT AT C

C7, C16 100 pF Chip Capacitors 100B101JP500XT AT C

C8, C15 1000 pF Chip Capacitors 100B102JP50XT ATC

C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C10, C13 39K pF Chip Capacitors 200B393KP50XT ATC

C11, C12 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

R1 50 Ω Chip Resistor P51ETR-ND Newark

RF

OUTPUT

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

3

C11

C10 C9

C14 C13

C12

C1

C4

C6

C5

C2

C8

C7

C3

C15

C16

C17

C18

C19

R1

C20

C22 C21

MRFG35010XX, Rev. 5

MRFG35010ANT1

4

Figure 2. 3.5 GHz Test Circuit Component Layout

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

12

10

VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz

8

Single−Carrier W−CDMA

3.84 MHz Channel Bandwidth
= 0.875 ∠ −131.0_

Γ

S

6

Γ

= 0.849 ∠ −145.8_

L

, TRANSDUCER GAIN (dB)

T

G

4

η

D

2

10

15

20 25 30 35

P

, OUTPUT POWER (dBm)

out

Figure 3. Single- Carrier W -CDMA Power Gain

and Drain Efficiency versus Output Power

−10
VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz

Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth

Γ

−20

−30

= 0.875 ∠ −131.0_, ΓL = 0.849 ∠ −145.8_

S

IRL

50

40

G

T

30

20

, DRAIN EFFICIENCY (%)

D

10

η

0

40

−10

−15

−20

−40

−50

−60

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

15

ACPR

20

25 30 35

P

, OUTPUT POWER (dBm)

out

Figure 4. Single- Carrier W -CDMA ACPR and

Input Return Loss versus Output Power

NOTE: All data is referenced to package lead interface. ΓS and Γ

All data is generated from load pull, not from the test circuit shown.

−25

INPUT RETURN LOSS (dB)IRL,

−30

−35

40

are the impedances presented to the DUT.

L

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

5

TYPICAL CHARACTERISTICS

14

VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth

12

PAR = 8.5 dB @ 0.01% Probability (CCDF)

10

8

, POWER GAIN (dB)

6

ps

G

4

2

20

G

ps

η

D

24

28 32 36

P

, OUTPUT POWER (dBm)

out

Figure 5. Single- Carrier W -CDMA Power Gain

and Drain Efficiency versus Output Power

−10
VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz

Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)

−20

−30

IRL

60

50

40

30

20

, DRAIN EFFICIENCY (%)

D

η

10

0

40

−5

−10

−15

−40

−50

−60

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

20

ACPR

25

P

, OUTPUT POWER (dBm)

out

30 35

Figure 6. Single- Carrier W -CDMA ACPR and

Input Return Loss versus Output Power

NOTE: Data is generated from the test circuit shown.

−20

INPUT RETURN LOSS (dB)IRL,

−25

−30

40

MRFG35010ANT1

6

RF Device Data

Freescale Semiconductor

Zo = 25 Ω

Z

load

f = 3550 MHz

V

= 12 Vdc, IDQ = 130 mA, P

DD

f

MHz

Z

source

W

= 1 W Avg.

out

3550 4.0 - j22.6 4.5 - j15.3

Z

= Test circuit impedance as measured from

source

Z

load

Input
Matching
Network

gate to ground.

= Test circuit impedance as measured

from drain to ground.

Device
Under
Test

Z

source

f = 3550 MHz

Z

load

W

Output
Matching
Network

RF Device Data
Freescale Semiconductor

Z

source

Z

load

Figure 7. Series Equivalent Source and Load Impedance

MRFG35010ANT1

7

Table 7. Class AB Common Source S- Parameters

f

S

11

GHz

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

(VDD = 12 Vdc, IDQ = 130 mA, TA = 25°C, 50 ohm system)

S

21

S

12

S

22

0.5 0.945 - 174.56 4.019 84.19 0.020 3.30 0.780 -179.31

0.55 0.946 -176.04 3.663 82.53 0.020 2.54 0.781 179.94

0.6 0.947 - 177.32 3.366 80.98 0.020 2.19 0.781 179.35

0.65 0.947 -178.45 3.112 79.47 0.020 1.57 0.781 178.72

0.7 0.948 - 179.56 2.895 77.97 0.020 0.87 0.781 178.05

0.75 0.948 179.46 2.706 76.52 0.020 0.62 0.781 177.37

0.8 0.948 178.47 2.540 75.04 0.020 - 0.13 0.780 176.66

0.85 0.948 177.54 2.393 73.57 0.020 -0.49 0.780 175.92

0.9 0.949 176.67 2.262 72.11 0.020 - 0.94 0.781 175.15

0.95 0.950 175.80 2.144 70.67 0.020 -1.83 0.781 174.36

1 0.949 174.99 2.036 69.21 0.020 - 2.42 0.780 173.56

1.05 0.950 174.21 1.944 67.79 0.020 -2.91 0.781 172.68

1.1 0.950 173.45 1.855 66.34 0.020 - 3.44 0.781 171.84

1.15 0.950 172.67 1.775 64.92 0.020 -4.10 0.781 171.00

1.2 0.949 171.97 1.701 63.52 0.020 - 4.38 0.781 170.10

1.25 0.950 171.32 1.634 62.09 0.020 -4.91 0.781 169.21

1.3 0.950 170.63 1.571 60.69 0.020 - 5.31 0.782 168.37

1.35 0.950 169.95 1.513 59.26 0.020 -6.04 0.783 167.37

1.4 0.949 169.34 1.459 57.88 0.020 - 6.58 0.783 166.48

1.45 0.949 168.69 1.409 56.49 0.020 -7.02 0.784 165.70

1.5 0.949 168.05 1.365 55.14 0.020 - 7.32 0.785 164.78

1.55 0.948 168.83 1.317 53.93 0.020 -7.26 0.787 162.67

1.6 0.948 168.16 1.278 52.65 0.020 - 7.55 0.788 162.09

1.65 0.948 167.46 1.238 51.29 0.020 -7.83 0.789 161.44

1.7 0.948 166.80 1.203 50.05 0.020 - 8.50 0.790 160.84

1.75 0.949 166.20 1.168 48.79 0.020 -9.20 0.790 160.36

1.8 0.950 165.51 1.137 47.59 0.020 - 9.26 0.791 159.76

1.85 0.950 164.95 1.108 46.33 0.020 -9.47 0.791 159.37

1.9 0.950 164.28 1.080 45.15 0.020 - 9.71 0.792 158.91

1.95 0.950 163.65 1.053 43.95 0.020 -9.95 0.793 158.40

2 0.951 162.95 1.029 42.80 0.020 -10.45 0.793 158.00

2.05 0.950 162.45 1.004 41.72 0.020 -10.68 0.794 157.80

2.1 0.950 161.82 0.983 40.60 0.020 - 11.15 0.794 157.42

2.15 0.950 161.22 0.962 39.44 0.020 -11.31 0.794 157.19

2.2 0.949 160.64 0.944 38.45 0.020 - 11.94 0.796 157.03

2.25 0.949 160.02 0.926 37.33 0.020 -12.19 0.797 156.78

2.3 0.949 159.39 0.910 36.28 0.020 -12.28 0.796 156.48

2.35 0.951 158.85 0.894 35.26 0.020 -12.28 0.797 156.47

2.4 0.949 158.25 0.880 34.21 0.020 -12.08 0.797 156.16

2.45 0.948 157.61 0.867 33.14 0.020 -12.46 0.796 155.87

2.5 0.949 157.00 0.855 32.09 0.021 -12.24 0.797 155.85

2.55 0.948 156.38 0.843 31.01 0.021 -12.56 0.796 155.53

2.6 0.948 155.73 0.833 29.90 0.021 -12.08 0.796 155.28

2.65 0.946 155.07 0.823 28.86 0.021 -12.64 0.796 155.24

2.7 0.945 154.41 0.813 27.71 0.021 -12.48 0.796 154.81

2.75 0.944 153.70 0.805 26.55 0.022 -13.14 0.794 154.51

MRFG35010ANT1

8

(continued)

RF Device Data

Freescale Semiconductor

Table 7. Class AB Common Source S- Parameters (V

f

S

11

GHz

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

= 12 Vdc, IDQ = 130 mA, TA = 25°C, 50 ohm system) (continued)

DD

S

21

S

12

S

22

2.8 0.943 153.02 0.796 25.46 0.022 -13.75 0.794 154.30

2.85 0.943 152.31 0.788 24.29 0.022 -14.19 0.794 153.85

2.9 0.942 151.61 0.781 23.11 0.022 -14.81 0.792 153.42

2.95 0.939 150.84 0.775 22.01 0.022 -15.38 0.791 153.00

3 0.942 150.15 0.768 20.75 0.022 -15.83 0.792 152.55

3.05 0.941 149.40 0.761 19.55 0.023 -16.06 0.787 152.10

3.1 0.939 148.59 0.757 18.31 0.023 -16.58 0.789 151.47

3.15 0.939 147.75 0.751 17.03 0.023 -17.33 0.788 150.69

3.2 0.938 146.97 0.747 15.68 0.023 -17.60 0.786 149.89

3.25 0.941 145.84 0.743 14.42 0.023 -18.35 0.789 149.10

3.3 0.937 145.28 0.736 12.96 0.023 -18.68 0.785 148.30

3.35 0.936 144.36 0.733 11.56 0.023 - 19.36 0.780 147.36

3.4 0.935 143.56 0.728 10.18 0.024 -19.65 0.780 146.56

3.45 0.937 142.81 0.724 8.84 0.024 -19.96 0.781 145.50

3.5 0.934 141.86 0.719 7.37 0.024 - 19.70 0.775 144.38

3.55 0.934 140.99 0.716 6.03 0.024 -19.69 0.776 143.47

3.6 0.933 140.12 0.711 4.58 0.025 - 20.44 0.773 142.22

3.65 0.931 139.20 0.708 3.03 0.025 -21.24 0.768 141.01

3.7 0.933 138.37 0.704 1.61 0.025 - 22.19 0.769 140.17

3.75 0.933 137.48 0.700 0.20 0.025 -22.67 0.767 138.91

3.8 0.933 136.55 0.696 -1.33 0.026 - 23.74 0.763 137.79

3.85 0.931 135.57 0.693 - 2.73 0.026 -24.10 0.765 136.96

3.9 0.928 134.64 0.689 - 4.11 0.026 - 24.28 0.767 135.76

3.95 0.925 133.78 0.685 - 5.62 0.026 -24.60 0.765 134.55

4 0.921 133.05 0.682 -7.05 0.026 - 25.13 0.769 133.67

4.05 0.920 132.39 0.678 - 8.42 0.027 -25.07 0.772 132.19

4.1 0.918 131.72 0.675 -9.92 0.027 - 25.69 0.767 130.73

4.15 0.923 130.82 0.673 -11.37 0.027 - 26.05 0.766 129.70

4.2 0.919 129.91 0.669 -12.78 0.028 -26.99 0.768 128.51

4.25 0.922 129.26 0.666 - 14.22 0.028 -27.58 0.762 127.29

4.3 0.924 128.37 0.664 -15.61 0.028 -28.51 0.764 126.49

4.35 0.926 127.34 0.662 - 16.92 0.029 -28.82 0.761 125.41

4.4 0.926 126.32 0.658 -18.36 0.029 -29.48 0.756 124.59

4.45 0.926 125.27 0.658 - 19.76 0.029 -29.54 0.759 123.86

4.5 0.926 124.13 0.657 -21.11 0.030 -30.12 0.758 122.97

4.55 0.925 123.09 0.654 - 22.50 0.030 -30.82 0.753 122.26

4.6 0.924 122.08 0.654 -23.83 0.030 -31.17 0.755 121.74

4.65 0.924 120.81 0.654 - 25.14 0.031 -31.73 0.754 120.88

4.7 0.922 119.61 0.653 - 26.55 0.031 -32.31 0.750 120.35

4.75 0.921 118.44 0.654 - 27.97 0.032 -33.11 0.752 119.79

4.8 0.919 117.22 0.654 - 29.30 0.032 -33.53 0.751 119.03

4.85 0.917 115.94 0.653 - 30.70 0.032 -34.28 0.747 118.53

4.9 0.916 114.60 0.655 - 32.19 0.033 -34.59 0.748 118.03

4.95 0.914 113.24 0.657 - 33.61 0.033 -34.92 0.748 117.16

5 0.912 111.82 0.657 - 35.10 0.034 - 35.27 0.743 116.59

MRFG35010ANT1

RF Device Data
Freescale Semiconductor

9

PACKAGE DIMENSIONS

B

ZONE V

ZONE W

A

F

3

0.095

2.41

0.146

3.71

0.115

2.92

21

D

R

L

0.115

2.92

0.020

4

N

0.35 (0.89) X 45 5

K

Q

U

H

4

1

3

G

ZONE X

2

S

VIEW Y- Y

C

__

"

P

YY

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.

2. CONTROLLING DIMENSION: INCH

3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. SOURCE

CASE 466- 03

10 DRAFT

_

E

SOLDER FOOTPRINT

DIM MIN MAX MIN MAX

A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
J 0.160 0.180 4.06 4.57
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31

ZONE V 0.000 0.021 0.00 0.53

ZONE W 0.000 0.010 0.00 0.25

ZONE X 0.000 0.010 0.00 0.25

0.51

inches

mm

MILLIMETERSINCHES

ISSUE D
PLD- 1.5

PLASTIC

MRFG35010ANT1

10

RF Device Data

Freescale Semiconductor

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 May 2006 • Initial Release of Data Sheet

1 Dec. 2008 • Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum

2 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1

• Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables

process as described in Product and Process Change Notification number, PCN13516, p. 1

RF Device Data
Freescale Semiconductor

MRFG35010ANT1

11

How to Reach Us:

Home Page:

www.freescale.com

Web Support:

http://www.freescale.com/support

USA/Europe or Locations Not Listed:

Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1- 800 - 521 - 6274 or +1 -480- 768 - 2130
www.freescale.com/support

Europe, Middle East, and Africa:

Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
[phone] (English)
[phone] (English)
[phone] (German)
[phone] (French)
www.freescale.com/support

Japan:

Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1- 8 - 1, Shimo - Meguro, Meguro- ku,
Tokyo 153 -0064
Japan
0120 191014 or [phone]
[e-mail]

Asia/Pacific:

Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
[phone]
[e-mail]

For Literature Requests Only:

Freescale Semiconductor Literature Distribution Center
1- 800 - 441 - 2447 or +1 -303- 675 - 2140
Fax: +1- 303 - 675 - 2150
[e-mail]

Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.

Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2006, 2008- 2009. All rights reserved.

MRFG35010ANT1

Document Number: MRFG35010AN
Rev. 2, 6/2009

12

RF Device Data

Freescale Semiconductor