Freescale MRFG35003NT1 Technical Data

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Freescale Semiconductor

Technical Data

MRFG35003NT1 replaced by MRFG35003ANT1.

Document Number: MRFG35003N

Rev. 5, 1/2008

Gallium Arsenide PHEMT

MRFG35003NT1

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.

• Typical W-CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

I

= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

DQ

@ 0.01% Probability)

Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%

• 3 Watts P1dB @ 3.55 GHz

N

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

3.5 GHz, 3 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

RMATI

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Gate- Source Voltage V

RF Input Power P

HIVE INF

Storage Temperature Range T

Channel Temperature

Operating Case Temperature Range T

Table 2. Thermal Characteristics

AR

Thermal Resistance, Junction to Case Class AB R

Table 3. Moisture Sensitivity Level

Per JESD 22-A113, IPC/JEDEC J-STD - 020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

(1)

Characteristic Symbol Value Unit

Test Methodology Rating Package Peak Temperature Unit

DSS

P

GS

stg

T

ch

θ

D

in

C

JC

15 Vdc

(2)

8.1

(2)

0.05

-5 Vdc

29 dBm

-65 to +150 °C

175 °C

-20 to +85 °C

(2)

18.5

W

W/°C

ARCHIVE INFORMATION

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35003NT1

1

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Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

(V

= 3.5 Vdc, VGS = 0 Vdc)

DS

Off State Leakage Current

(VGS = - 0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 12 Vdc, VGS = -2.5 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

Gate- Source Cut - off Voltage

(VDS = 3.5 Vdc, IDS = 6.5 mA)

Quiescent Gate Voltage

(VDS = 12 Vdc, ID = 55 mA)

Power Gain

N

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 55 mA, P
f = 3.55 GHz)

Adjacent Channel Power Ratio

(VDD = 12 Vdc, P
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,

RMATI

64 CH, 3.84 MCPS)

= 0.30 W Avg., IDQ = 55 mA,

out

(TC = 25°C unless otherwise noted)

= 0.30 W Avg.,

out

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

G

ps

P

1dB

h

D

ACPR — -42 -40 dBc

— 1.3 — Adc

— < 1.0 100 µAdc

— — 450 µAdc

— < 1.0 7 mAdc

-1.2 -0.9 - 0.7 Vdc

-1.2 -0.9 - 0.7 Vdc

10 11.5 — dB

— 3 — W

23 25 — %

HIVE INF

AR

MRFG35003NT1

2

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

C

O

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V

GS

N

C10

C9 C8 C7 C6 C5 C4

RF

INPUT

Z1 Z2 Z3 Z4 Z10 Z11 Z12 Z13 Z14 Z16 Z17 Z18

C1 C20

C13 C14 C15 C16 C17 C18 C19

R1

C2 C3 C11 C12

Z5 Z15

C21 C22 C24

Z9Z8Z6 Z7

C23

C26

C25C27C28

V

RF

OUTPUT

DD

Z1, Z18 0.125″ x 0.044″ Microstrip
Z2 0.409″ x 0.044″ Microstrip
Z3 0.326″ x 0.288″ Microstrip
Z4 0.333″ x 0.572″ Microstrip
Z5, Z15 0.527″ x 0.015″ Microstrip

RMATI

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C20 7.5 pF Chip Capacitors 100A7R5JP150X AT C

C2, C3, C11, C12 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AV X

C4, C13 10 pF Chip Capacitors 100A100JP500X ATC

C5, C14 100 pF Chip Capacitors 100A101JP500X ATC

HIVE INF

C6, C15 100 pF Chip Capacitors 100B101JP500X ATC

C7, C16 1000 pF Chip Capacitors 100B102JP500X ATC

C8, C17 3.9 µF Chip Capacitors ATC

C9, C18 0.1 µF Chip Capacitors ATC

C10, C19 22 µF, 35 V Tantalum Surface Mount Capacitors ATC

AR

C21 0.7 pF Chip Capacitor (0805) 08051J0R7BBT AVX

C22, C27 0.2 pF Chip Capacitors (0805) 08051J0R2BBT AVX

C23, C28 0.8 pF Chip Capacitors (0805) 08051J0R8BBT AVX

C24 1.0 pF Chip Capacitor 08051J1R0BBT AVX

C25 1.2 pF Chip Capacitor 08051J1R2BBT AVX

C26 0.5 pF Chip Capacitor 08051J0R5BBT AVX

R1

Z6, Z8, Z10 0.050″ x 0.025″ Microstrip
Z7, Z9 0.097″ x 0.025″ Microstrip

Figure 1. 3.5 GHz Test Circuit Schematic

100 W Chip Resistor

Z11 0.082″ x 0.372″ Microstrip
Z12 0.169″ x 0.471″ Microstrip
Z13 0.196″ x 0.093″ Microstrip
Z14 0.313″ x 0.338″ Microstrip
Z16 0.200″ x 0.065″ Microstrip
Z17 0.472″ x 0.044″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5

ARCHIVE INFORMATION

Newark

RF Device Data
Freescale Semiconductor

MRFG35003NT1

3

C

O

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C10

C9

C8 C7

C2

R1

C6

C5

C4

C3

C15

C14

C13

C11

C16

C12

C17

C18

C19

N

C1

RMATI

HIVE INF

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

C21

C28

C22

C27

C23

C24

C25

C26

MRFG35003M

Rev 1

C20

AR

MRFG35003NT1

4

Figure 2. 3.5 GHz Test Circuit Component Layout

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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TYPICAL CHARACTERISTICS

N

RMATI

0

−10 −10

−20 −20
VDS = 12 Vdc, IDQ = 50 mA

f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA

−30 −30

ΓS = 0.813é−106.27_, ΓL = 0.734é−142.65_

−40 −40

INPUT RETURN LOSS (dB)IRL,

−50 −50

−60

0.01

P

, OUTPUT POWER (WATTS)

out

Figure 3. W- CDMA ACPR and Input Return

Loss versus Output Power

18

VDS = 12 Vdc, IDQ = 50 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA

16 40

ΓS = 0.813é−106.27_, ΓL = 0.734é−142.65_

14 35

12 30

0.1

IRL

ACPR

PAE

G

T

0

ACPR (dBc)

−60

1

45

HIVE INF

NOTE: All data is referenced to package lead interface. ΓS and Γ

All data is generated from load pull, not from the test circuit shown.

AR

10 25

820

, TRANSDUCER GAIN (dB)

T

615

G

410

2

0.01

P

, OUTPUT POWER (WATTS)

out

Figure 4. Transducer Gain and Power Added

Efficiency versus Output Power

0.1

are the impedances presented to the DUT.

L

PAE, POWER ADDED EFFICIENCY (%)

5

1

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35003NT1

5

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Table 6. Class AB Common Source S- Parameters at V

f

S

11

GHz

0.50 0.879 -160.58 8.644 88.22 0.038 6.94 0.520 -161.47

0.55 0.879 -163.33 7.924 85.88 0.039 5.42 0.520 -163.29

0.60 0.877 -166.03 7.317 83.57 0.039 3.80 0.520 -165.21

0.65 0.876 -168.54 6.811 81.29 0.039 2.37 0.520 -167.01

0.70 0.877 -170.64 6.380 79.13 0.039 0.94 0.521 -168.58

0.75 0.875 -172.68 5.988 77.06 0.039 -0.41 0.520 - 170.13

0.80 0.877 -174.56 5.653 75.00 0.040 -1.67 0.520 - 171.60

0.85 0.876 -176.25 5.310 72.83 0.040 -2.81 0.520 - 172.89

0.90 0.874 -177.90 5.058 71.00 0.040 -4.01 0.519 - 174.37

0.95 0.875 -179.54 4.825 69.08 0.040 -5.15 0.520 - 175.84

1.00 0.876 179.00 4.608 67.27 0.040 -6.31 0.520 -177.05

1.05 0.875 177.53 4.411 65.38 0.040 -7.28 0.519 -178.37

N

1.10 0.874 176.04 4.224 63.51 0.040 -8.43 0.520 -179.67

1.15 0.875 174.55 4.056 61.69 0.040 -9.47 0.521 179.15

1.20 0.874 173.13 3.894 59.88 0.040 - 10.47 0.520 177.91

1.25 0.873 171.63 3.743 58.01 0.040 -11.78 0.521 176.52

1.30 0.876 170.20 3.609 56.26 0.040 - 12.79 0.522 175.56

1.35 0.871 168.97 3.479 54.57 0.040 - 13.72 0.520 174.80

1.40 0.878 167.17 3.355 52.76 0.040 - 14.65 0.526 173.34

1.45 0.876 165.98 3.237 51.14 0.040 - 15.48 0.526 172.88

RMATI

1.50 0.874 162.45 3.118 49.25 0.040 - 16.80 0.528 174.64

1.55 0.874 161.17 3.024 47.67 0.040 - 17.76 0.529 173.65

1.60 0.874 160.09 2.929 46.14 0.040 - 18.51 0.530 172.88

1.65 0.876 159.00 2.848 44.54 0.040 - 19.27 0.530 172.31

1.70 0.878 157.85 2.767 42.99 0.039 - 20.03 0.531 171.29

1.75 0.878 156.84 2.690 41.32 0.039 - 20.89 0.533 170.58

1.80 0.878 155.94 2.625 39.82 0.039 - 21.53 0.533 170.03

1.85 0.880 154.93 2.557 38.21 0.039 - 22.22 0.533 168.95

1.90 0.879 154.05 2.492 36.74 0.039 - 23.01 0.536 168.19

1.95 0.879 153.24 2.434 35.28 0.039 - 23.74 0.535 167.63

HIVE INF

2.00 0.881 152.32 2.379 33.68 0.039 - 24.55 0.535 166.68

2.05 0.881 151.56 2.325 32.27 0.040 - 25.32 0.538 165.91

2.10 0.880 150.85 2.279 30.90 0.040 - 25.97 0.539 165.46

2.15 0.881 149.96 2.236 29.41 0.040 - 26.76 0.537 164.56

2.20 0.881 149.27 2.191 27.93 0.040 - 27.75 0.539 163.66

AR

2.25 0.880 148.61 2.151 26.53 0.040 - 28.56 0.541 163.24

2.30 0.880 147.74 2.121 24.99 0.040 - 29.32 0.539 162.46

2.35 0.881 146.91 2.084 23.54 0.040 - 29.95 0.539 161.41

2.40 0.879 146.12 2.051 22.12 0.040 - 30.72 0.540 160.97

2.45 0.877 145.07 2.023 20.46 0.040 - 31.44 0.539 160.26

2.50 0.876 144.07 1.992 18.93 0.040 - 32.36 0.539 159.16

2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56

2.60 0.873 142.10 1.948 15.95 0.041 - 33.58 0.538 157.90

2.65 0.872 140.88 1.924 14.31 0.041 - 34.41 0.538 156.83

2.70 0.872 139.83 1.901 12.69 0.041 - 35.22 0.538 156.16

2.75 0.867 138.60 1.882 11.19 0.042 - 36.04 0.537 155.70

2.80 0.868 137.26 1.864 9.40 0.042 - 37.16 0.535 154.59

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

= 12 Vdc, IDQ = 50 mA

DS

S

21

S

12

S

22

ARCHIVE INFORMATION

MRFG35003NT1

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RF Device Data

Freescale Semiconductor

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f

Table 6. Class AB Common Source S- Parameters at VDS = 12 Vdc, IDQ = 50 mA (continued)

S

11

GHz

2.85 0.868 136.03 1.845 7.80 0.043 - 38.56 0.537 153.86

2.90 0.866 134.67 1.828 6.20 0.043 - 39.94 0.536 153.32

2.95 0.866 133.02 1.812 4.39 0.043 - 41.41 0.534 152.08

3.00 0.868 131.47 1.795 2.53 0.043 - 42.49 0.536 151.08

3.05 0.865 129.99 1.780 0.80 0.043 - 43.57 0.535 150.49

3.10 0.864 128.11 1.766 -1.00 0.043 -44.68 0.532 149.20

3.15 0.865 126.39 1.745 -2.87 0.043 -45.67 0.533 148.09

3.20 0.864 124.86 1.728 -4.58 0.043 -46.62 0.533 147.42

3.25 0.861 122.97 1.714 -6.48 0.043 -47.78 0.531 146.29

3.30 0.863 121.30 1.697 -8.33 0.043 -49.02 0.532 145.13

3.35 0.862 119.77 1.681 -9.97 0.043 -49.91 0.532 144.52

3.40 0.860 117.84 1.665 - 11.83 0.043 - 50.93 0.529 143.46

N

3.45 0.862 116.26 1.648 - 13.70 0.043 - 51.73 0.529 142.35

3.50 0.861 114.65 1.630 - 15.43 0.043 - 52.55 0.530 141.50

3.55 0.860 112.77 1.620 - 17.24 0.044 - 53.64 0.527 140.51

3.60 0.862 111.19 1.602 -18.99 0.044 - 54.74 0.525 139.19

3.65 0.861 109.76 1.584 - 20.65 0.044 - 55.56 0.525 138.23

3.70 0.860 108.08 1.572 - 22.49 0.044 - 56.84 0.524 137.30

3.75 0.861 106.70 1.557 - 24.18 0.044 -58.11 0.523 136.00

3.80 0.862 105.31 1.544 - 25.86 0.044 - 59.31 0.524 134.95

RMATI

3.85 0.862 103.85 1.533 - 27.47 0.044 - 60.49 0.523 134.13

3.90 0.861 102.50 1.519 - 29.14 0.044 - 61.50 0.521 132.71

3.95 0.862 101.16 1.508 - 30.97 0.044 - 62.41 0.522 131.61

4.00 0.861 99.84 1.499 -32.49 0.044 - 63.14 0.520 130.97

4.05 0.861 98.44 1.494 -34.26 0.044 - 64.07 0.518 129.57

4.10 0.861 97.12 1.482 -35.96 0.044 - 64.91 0.518 128.23

4.15 0.859 96.07 1.474 -37.51 0.045 - 65.77 0.515 127.49

4.20 0.858 94.61 1.471 -39.42 0.045 - 67.06 0.512 125.93

4.25 0.859 93.26 1.463 -41.19 0.045 - 68.21 0.512 124.32

4.30 0.859 92.06 1.458 -42.86 0.045 - 69.40 0.511 123.47

HIVE INF

4.35 0.857 90.72 1.457 -44.58 0.046 - 70.54 0.507 122.03

4.40 0.857 89.22 1.450 -46.51 0.046 - 71.95 0.508 120.25

4.45 0.855 87.99 1.446 -48.27 0.046 - 73.34 0.508 119.27

4.50 0.855 86.49 1.453 -50.09 0.047 - 74.58 0.504 117.72

AR

4.55 0.855 84.61 1.448 -52.14 0.046 - 75.92 0.503 115.65

4.60 0.854 83.10 1.449 -53.98 0.047 - 76.82 0.501 114.46

4.65 0.853 81.10 1.454 -56.16 0.047 - 78.14 0.495 112.83

4.70 0.851 78.94 1.450 -58.44 0.048 - 79.84 0.492 110.59

4.75 0.851 77.09 1.450 -60.56 0.048 - 81.55 0.491 109.01

4.80 0.848 74.85 1.450 -62.75 0.048 - 83.28 0.486 107.24

4.85 0.849 72.60 1.448 -65.03 0.048 - 84.88 0.483 105.01

4.90 0.845 70.48 1.443 -67.33 0.048 - 86.30 0.482 103.27

4.95 0.841 68.09 1.443 -69.60 0.048 - 87.72 0.477 101.51

5.00 0.841 65.50 1.442 -72.12 0.048 - 89.22 0.474 99.28

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

S

21

S

12

S

22

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35003NT1

7

C

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PACKAGE DIMENSIONS

N

RMATI

B

ZONE V

ZONE W

A

F

3

21

D

4

N
K

Q

H

4

1

3

G

ZONE X

VIEW Y- Y

R

0.35 (0.89) X 45 5

U

2

S

L

C

__

"

P

YY

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.

2. CONTROLLING DIMENSION: INCH

3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. SOURCE

CASE 466- 03

ISSUE D
PLD- 1.5

0.095

2.41

10 DRAFT

_

E

0.115

2.92

ZONE V 0.000 0.021 0.00 0.53

ZONE W 0.000 0.010 0.00 0.25

ZONE X 0.000 0.010 0.00 0.25

0.146

3.71

0.115

2.92

0.020

0.51

SOLDER FOOTPRINT

DIM MIN MAX MIN MAX

A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
J 0.160 0.180 4.06 4.57
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31

MILLIMETERSINCHES

inches

mm

PLASTIC

HIVE INF

AR

MRFG35003NT1

8

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

5 Jan. 2008 • Listed replacement part, p. 1

• Added Revision History, p. 9

N

RMATI

HIVE INF

AR

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35003NT1

9

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How to Reach Us:

Home Page:

www.freescale.com

Web Support:

http://www.freescale.com/support

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Freescale Semiconductor, Inc.
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RMATI

Technical Information Center
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ARCHIVE INFORMATION

MRFG35003NT1

Document Number: MRFG35003N
Rev. 5, 1/2008

10

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