Freescale MRFG35003NT1 Technical Data

C

O

O

Freescale Semiconductor

Technical Data

MRFG35003NT1 replaced by MRFG35003ANT1.

Document Number: MRFG35003N

Rev. 5, 1/2008

Gallium Arsenide PHEMT

MRFG35003NT1

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.

• Typical W-CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

I

= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

DQ

@ 0.01% Probability)

Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%

• 3 Watts P1dB @ 3.55 GHz

N

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

3.5 GHz, 3 W, 12 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

RMATI

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Gate- Source Voltage V

RF Input Power P

HIVE INF

Storage Temperature Range T

Channel Temperature

Operating Case Temperature Range T

Table 2. Thermal Characteristics

AR

Thermal Resistance, Junction to Case Class AB R

Table 3. Moisture Sensitivity Level

Per JESD 22-A113, IPC/JEDEC J-STD - 020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

(1)

Characteristic Symbol Value Unit

Test Methodology Rating Package Peak Temperature Unit

DSS

P

GS

stg

T

ch

θ

D

in

C

JC

15 Vdc

(2)

8.1

(2)

0.05

-5 Vdc

29 dBm

-65 to +150 °C

175 °C

-20 to +85 °C

(2)

18.5

W

W/°C

ARCHIVE INFORMATION

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35003NT1

1

C

O

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Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

(V

= 3.5 Vdc, VGS = 0 Vdc)

DS

Off State Leakage Current

(VGS = - 0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 12 Vdc, VGS = -2.5 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

Gate- Source Cut - off Voltage

(VDS = 3.5 Vdc, IDS = 6.5 mA)

Quiescent Gate Voltage

(VDS = 12 Vdc, ID = 55 mA)

Power Gain

N

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 55 mA, P
f = 3.55 GHz)

Adjacent Channel Power Ratio

(VDD = 12 Vdc, P
f = 3.55 GHz, W- CDMA, 8.5 P/A @ 0.01% Probability,

RMATI

64 CH, 3.84 MCPS)

= 0.30 W Avg., IDQ = 55 mA,

out

(TC = 25°C unless otherwise noted)

= 0.30 W Avg.,

out

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

G

ps

P

1dB

h

D

ACPR — -42 -40 dBc

— 1.3 — Adc

— < 1.0 100 µAdc

— — 450 µAdc

— < 1.0 7 mAdc

-1.2 -0.9 - 0.7 Vdc

-1.2 -0.9 - 0.7 Vdc

10 11.5 — dB

— 3 — W

23 25 — %

HIVE INF

AR

MRFG35003NT1

2

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

C

O

O

V

GS

N

C10

C9 C8 C7 C6 C5 C4

RF

INPUT

Z1 Z2 Z3 Z4 Z10 Z11 Z12 Z13 Z14 Z16 Z17 Z18

C1 C20

C13 C14 C15 C16 C17 C18 C19

R1

C2 C3 C11 C12

Z5 Z15

C21 C22 C24

Z9Z8Z6 Z7

C23

C26

C25C27C28

V

RF

OUTPUT

DD

Z1, Z18 0.125″ x 0.044″ Microstrip
Z2 0.409″ x 0.044″ Microstrip
Z3 0.326″ x 0.288″ Microstrip
Z4 0.333″ x 0.572″ Microstrip
Z5, Z15 0.527″ x 0.015″ Microstrip

RMATI

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C20 7.5 pF Chip Capacitors 100A7R5JP150X AT C

C2, C3, C11, C12 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AV X

C4, C13 10 pF Chip Capacitors 100A100JP500X ATC

C5, C14 100 pF Chip Capacitors 100A101JP500X ATC

HIVE INF

C6, C15 100 pF Chip Capacitors 100B101JP500X ATC

C7, C16 1000 pF Chip Capacitors 100B102JP500X ATC

C8, C17 3.9 µF Chip Capacitors ATC

C9, C18 0.1 µF Chip Capacitors ATC

C10, C19 22 µF, 35 V Tantalum Surface Mount Capacitors ATC

AR

C21 0.7 pF Chip Capacitor (0805) 08051J0R7BBT AVX

C22, C27 0.2 pF Chip Capacitors (0805) 08051J0R2BBT AVX

C23, C28 0.8 pF Chip Capacitors (0805) 08051J0R8BBT AVX

C24 1.0 pF Chip Capacitor 08051J1R0BBT AVX

C25 1.2 pF Chip Capacitor 08051J1R2BBT AVX

C26 0.5 pF Chip Capacitor 08051J0R5BBT AVX

R1

Z6, Z8, Z10 0.050″ x 0.025″ Microstrip
Z7, Z9 0.097″ x 0.025″ Microstrip

Figure 1. 3.5 GHz Test Circuit Schematic

100 W Chip Resistor

Z11 0.082″ x 0.372″ Microstrip
Z12 0.169″ x 0.471″ Microstrip
Z13 0.196″ x 0.093″ Microstrip
Z14 0.313″ x 0.338″ Microstrip
Z16 0.200″ x 0.065″ Microstrip
Z17 0.472″ x 0.044″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5

ARCHIVE INFORMATION

Newark

RF Device Data
Freescale Semiconductor

MRFG35003NT1

3