Freescale MRFG35002N6T1 User Manual

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Freescale Semiconductor

Technical Data

MRFG35002N6T1 replaced by MRFG35002N6AT1.

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.

• Typical Single-Carrier W - CDMA Performance: V

65 mA, P

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• 1.5 Watts P1dB @ 3550 MHz, CW

N

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

= 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =

out

= 6 Volts, IDQ =

DD

Document Number: MRFG35002N6

Rev. 2, 1/2008

MRFG35002N6T1

3.5 GHz, 1.5 W, 6 V
POWER FET

GaAs PHEMT

CASE 466-03, STYLE 1

RMATI

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

RF Input Power P

Storage Temperature Range T

Channel Temperature

HIVE INF

Operating Case Temperature Range T

Table 2. Thermal Characteristics

Thermal Resistance, Junction to Case R

AR

Table 3. Moisture Sensitivity Level

Per JESD 22-A113, IPC/JEDEC J - STD -020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

(1)

Characteristic Symbol Value

Test Methodology Rating Package Peak Temperature Unit

DSS

GS

stg

T

ch

θ

in

C

JC

PLD-1.5

PLASTIC

8 Vdc

-5 Vdc

22 dBm

-65 to +150 °C

175 °C

-20 to +85 °C

(2)

15.2 °C/W

Unit

ARCHIVE INFORMATION

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFG35002N6T1

1

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Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

(V

= 3.5 Vdc, VGS = 0 Vdc)

DS

Off State Leakage Current

(VGS = - 0.4 Vdc, VDS = 0 Vdc)

Off State Drain Current

(VDS = 6 Vdc, VGS = -2.5 Vdc)

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

Gate-Source Cut-off Voltage

(VDS = 3.5 Vdc, IDS = 8.7 mA)

Quiescent Gate Voltage

(VDS = 6 Vdc, ID = 65 mA)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, P

N

Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain G

Drain Efficiency

Adjacent Channel Power Ratio ACPR — -41 -38 dBc

Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V

Output Power, 1 dB Compression Point, CW P

(TC = 25°C unless otherwise noted)

I

DSS

I

GSS

I

DSO

I

DSX

V

GS(th)

V

GS(Q)

h

= 6 Vdc, IDQ = 65 mA, f = 3550 MHz

DD

1dB

— 1.7 — Adc

— < 1.0 100 µAdc

— — 600 µAdc

— < 1.0 9 mAdc

-1.2 - 0.9 - 0.7 Vdc

-1.1 - 0.8 - 0.6 Vdc

= 158.5 mW Avg., f = 3550 MHz,

out

ps

D

8.5 10 — dB

23 27 — %

— 1.5 — W

RMATI

HIVE INF

AR

MRFG35002N6T1

2

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor

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V

BIAS

V

SUPPLY

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RMATI

RF

INPUT

C8

C13

C12 C11 C10 C9 C17 C16 C15 C14

Z1 Z2 Z3 Z5 Z7 Z9 Z10 Z12 Z14

C1

Z1, Z14 0.044″ x 0.125″ Microstrip
Z2 0.044″ x 0.500″ Microstrip
Z3 0.044″ x 0.052″ Microstrip
Z4 0.468″ x 0.010″ Microstrip
Z5 0.468″ x 0.356″ Microstrip
Z6, Z11 0.015″ x 0.549″ Microstrip
Z7 0.031″ x 0.259″ Microstrip

Z4

C3

Figure 1. MRFG35002N6 Test Circuit Schematic

C6

C7

R1

C5

Z6

Z8

C4

C18

C19

C20

C21C22

Z11

Z13

C24

C23

Z8 0.420″ x 0.150″ Microstrip
Z9 0.150″ x 0.068″ Microstrip
Z10 0.290″ x 0.183″ Microstrip
Z12 0.044″ x 0.115″ Microstrip
Z13 0.044″ x 0.894″ Microstrip
PCB Rogers 4350, 0.020″, εr = 3.5

RF

OUTPUT

Table 5. MRFG35002N6 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C24 13 pF Chip Capacitors 100A130JP150X ATC

C2 Not Used

C3 1.2 pF Chip Capacitor 08051J1R2BBT AVX

C4 0.7 pF Chip Capacitor 08051J0R7BBT AVX

C5, C6, C21, C22 5.6 pF Chip Capacitors 08051J6R8BBT AVX

C7, C20 10 pF Chip Capacitors 100A100JP150X ATC

C8, C19 100 pF Chip Capacitors 100A101JP150X ATC

C9, C18 100 pF Chip Capacitors 100B101JP500X ATC

HIVE INF

C10, C17 1000 pF Chip Capacitors 100B102JP50X ATC

C11, C16 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet

C12, C15 39K pF Chip Capacitors 200B393KP50X ATC

C13, C14 10 µF Chip Capacitors GRM55DR61H106KA88B Kemet

AR

C23 0.2 pF Chip Capacitor 08051J0R2BBT AVX

R1 100 Ω, 1/4 W Chip Resistor

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRFG35002N6T1

3

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C13

C12 C11C12 C10 C9

C5

C8

C7

R1

C6

C18

C14

C15C16C17

C19

C20

C21C22

N

C1

RMATI

HIVE INF

C2

C3

C4

Figure 2. MRFG35002N6 Test Circuit Component Layout

C23

MRFG35002M6, Rev. 2

3.5 GHz - 3.6 GHz

C24

AR

MRFG35002N6T1

4

ARCHIVE INFORMATION

RF Device Data

Freescale Semiconductor