Freescale MRFE6S9130HR3, MRFE6S9130HSR3 Technical Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Document Number: MRFE6S9130H

Rev. 1, 12/2008

Designed for N- CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.

• Typical Single-Carrier N -CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,

P

= 27 Watts Avg., f = 880 MHz, IS- 95 CDMA (Pilot, Sync, Paging, Traffic

out

Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @

0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

Operation

DD

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRFE6S9130HR3

MRFE6S9130HSR3

880 MHz, 27 W AVG., 28 V

SINGLE N- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI- 780

MRFE6S9130HR3

CASE 465A-06, STYLE 1

NI- 780S

MRFE6S9130HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Storage Temperature Range T

Case Operating Temperature T

Operating Junction Temperature

(1,2)

DSS

GS

stg

C

T

J

-0.5, +66 Vdc

-0.5, +12 Vdc

- 65 to +150 °C

150 °C

225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

R

θ

JC

(2,3)

0.45

0.51

Unit

°C/W

 Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRFE6S9130HR3 MRFE6S9130HSR3

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22- A114) 1A (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 µAdc)

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 2.74 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, P
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

Adjacent Channel Power Ratio ACPR — - 47.6 -46 dBc

Input Return Loss IRL — -29 -9 dB

1. Part internally input matched.

(1)

= 25°C unless otherwise noted)

C

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

C

DSS

DSS

GSS

rss

oss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 10 µAdc

1 2.1 3 Vdc

2 2.9 4 Vdc

— 0.22 0.5 Vdc

— 1.6 — pF

— 66 — pF

= 27 W Avg. N-CDMA, f = 880 MHz,

out

18 19.2 21 dB

29 30.5 — %

MRFE6S9130HR3 MRFE6S9130HSR3

2

RF Device Data

Freescale Semiconductor

RF

INPUT

V

BIAS

V

SUPPLY

B1B2

+

C6C7

Z1

Z2 Z3 Z4 Z5 Z6

C1

C2

C3

L1

C4

C5

Z8

DUT

Z7

C8

Z9

Z10

C9

L2

Z11 Z12 Z13 Z14 Z15 Z16 Z17

C10 C11 C12

C14

C15

C16

C17

C18

C13

++++

C19

RF

OUTPUT

Z1 0.383″ x 0.080″ Microstrip
Z2 1.250″ x 0.080″ Microstrip
Z3 0.190″ x 0.220″ Microstrip
Z4 0.127″ x 0.220″ Microstrip
Z5 0.173″ x 0.220″ Microstrip
Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper

Z7 0.220″ x 0.630″ Microstrip
Z8 0.077″ x 0.630″ Microstrip
Z9 0.146″ x 0.630″ Microstrip
Z10 0.152″ x 0.630″ Microstrip
Z12 0.184″ x 0.220″ Microstrip
Z13 0.261″ x 0.220″ Microstrip

Z14 0.045″ x 0.220″ Microstrip
Z15 0.755″ x 0.080″ Microstrip
Z16 0.496″ x 0.080″ Microstrip
Z17 0.384″ x 0.080″ Microstrip
PCB Arlon CuClad 250GX-0300 - 55 - 22,

0.030″, εr = 2.55

Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic

Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Ferrite Beads, Short 2743019447 Fair Rite

C1, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC

C2 8.2 pF Chip Capacitor ATC100B8R2BT500XT ATC

C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson

C4, C5 12 pF Chip Capacitors ATC100B120JT500XT ATC

C6 20 K pF Chip Capacitor ATC200B203KT50XT ATC

C7, C16, C17, C18 10 µF, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet

C8, C9 10 pF Chip Capacitors ATC100B7R5JT500XT ATC

C10 11 pF Chip Capacitor ATC100B110JT500XT ATC

C12 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson

C15 0.56 µF, 50 V Chip Capacitor C1825C564J5GAC Kemet

C19 470 µF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi-Con

L1, L2 12.5 nH Inductors A04T- 5 Coilcraft

RF Device Data
Freescale Semiconductor

MRFE6S9130HR3 MRFE6S9130HSR3

3

C19

C1

C7

B2

C2

B1

L1

C3

C6

900 MHz

Rev 02

C4 C8

C5 C9

CUT OUT AREA

C10

C16 C17 C18

C15

C11

C14

C12

C13

L2

Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout

MRFE6S9130HR3 MRFE6S9130HSR3

4

RF Device Data

Freescale Semiconductor