Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Document Number: MRFE6S9130H
Rev. 1, 12/2008
Designed for N- CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single-Carrier N -CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,
P
= 27 Watts Avg., f = 880 MHz, IS- 95 CDMA (Pilot, Sync, Paging, Traffic
out
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
Operation
DD
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9130HR3
MRFE6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N- CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI- 780
MRFE6S9130HR3
CASE 465A-06, STYLE 1
NI- 780S
MRFE6S9130HSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate- Source Voltage V
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature
(1,2)
DSS
GS
stg
C
T
J
-0.5, +66 Vdc
-0.5, +12 Vdc
- 65 to +150 °C
150 °C
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
R
θ
JC
(2,3)
0.45
0.51
Unit
°C/W
Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1A (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
Drain-Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, P
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain G
Drain Efficiency η
Adjacent Channel Power Ratio ACPR — - 47.6 -46 dBc
Input Return Loss IRL — -29 -9 dB
1. Part internally input matched.
(1)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
C
DSS
DSS
GSS
rss
oss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 10 µAdc
1 2.1 3 Vdc
2 2.9 4 Vdc
— 0.22 0.5 Vdc
— 1.6 — pF
— 66 — pF
= 27 W Avg. N-CDMA, f = 880 MHz,
out
18 19.2 21 dB
29 30.5 — %
MRFE6S9130HR3 MRFE6S9130HSR3
2
RF Device Data
Freescale Semiconductor
RF
INPUT
V
BIAS
V
SUPPLY
B1B2
+
C6C7
Z1
Z2 Z3 Z4 Z5 Z6
C1
C2
C3
L1
C4
C5
Z8
DUT
Z7
C8
Z9
Z10
C9
L2
Z11 Z12 Z13 Z14 Z15 Z16 Z17
C10 C11 C12
C14
C15
C16
C17
C18
C13
++++
C19
RF
OUTPUT
Z1 0.383″ x 0.080″ Microstrip
Z2 1.250″ x 0.080″ Microstrip
Z3 0.190″ x 0.220″ Microstrip
Z4 0.127″ x 0.220″ Microstrip
Z5 0.173″ x 0.220″ Microstrip
Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper
Z7 0.220″ x 0.630″ Microstrip
Z8 0.077″ x 0.630″ Microstrip
Z9 0.146″ x 0.630″ Microstrip
Z10 0.152″ x 0.630″ Microstrip
Z12 0.184″ x 0.220″ Microstrip
Z13 0.261″ x 0.220″ Microstrip
Z14 0.045″ x 0.220″ Microstrip
Z15 0.755″ x 0.080″ Microstrip
Z16 0.496″ x 0.080″ Microstrip
Z17 0.384″ x 0.080″ Microstrip
PCB Arlon CuClad 250GX-0300 - 55 - 22,
0.030″, εr = 2.55
Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair Rite
C1, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2 8.2 pF Chip Capacitor ATC100B8R2BT500XT ATC
C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C4, C5 12 pF Chip Capacitors ATC100B120JT500XT ATC
C6 20 K pF Chip Capacitor ATC200B203KT50XT ATC
C7, C16, C17, C18 10 µF, 35 V Tantalum Chip Capacitors T491D106K035AT Kemet
C8, C9 10 pF Chip Capacitors ATC100B7R5JT500XT ATC
C10 11 pF Chip Capacitor ATC100B110JT500XT ATC
C12 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson
C15 0.56 µF, 50 V Chip Capacitor C1825C564J5GAC Kemet
C19 470 µF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi-Con
L1, L2 12.5 nH Inductors A04T- 5 Coilcraft
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
3
C19
C1
C7
B2
C2
B1
L1
C3
C6
900 MHz
Rev 02
C4 C8
C5 C9
CUT OUT AREA
C10
C16 C17 C18
C15
C11
C14
C12
C13
L2
Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout
MRFE6S9130HR3 MRFE6S9130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
19.5
19
G
ps
18.5
18
17.5
17
, POWER GAIN (dB)
16.5
ps
G
15.5
ACPR
16
ALT1
15
η
D
V
= 28 Vdc, P
DD
= 27 W (Avg.), IDQ = 950 mA
out
N−CDMA IS−95 Pilot, Sync, Paging, Traffic
Codes 8 Through 13
IRL
960940920900880860840
34
32
30
28
26
−20
−30
−40
−50
−60
−70
980820
f, FREQUENCY (MHz)
Figure 3. Single- Carrier N -CDMA Broadband Performance @ P
19
18.5
η
18
D
17.5
17
16.5
16
15.5
, POWER GAIN (dB)
15
ps
G
14.5
ACPR
14
13.5
ALT1
13
G
ps
V
= 28 Vdc, P
DD
= 54 W (Avg.)
out
IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
IRL
f, FREQUENCY (MHz)
960940920900880860840
50
47
44
41
38
35
−10
−20
−30
−40
−50
−60
−70
980820
Figure 4. Single- Carrier N -CDMA Broadband Performance @ P
, DRAIN
D
η
EFFICIENCY (%)
−5
−15
−25
−35
−45
ACPR (dBc), ALT1 (dBc)
−55
= 27 Watts Avg.
out
, DRAIN
D
η
EFFICIENCY (%)
0
−5
−10
−15
−20
−25
−30
ACPR (dBc), ALT1 (dBc)
= 54 Watts Avg.
out
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
21
IDQ = 1400 mA
20
1100 mA
19
950 mA
18
700 mA
, POWER GAIN (dB)
17
ps
G
500 mA
16
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
15
1
P
, OUTPUT POWER (WATTS) PEP
out
Figure 5. Two - Tone Power Gain versus
RF Device Data
Freescale Semiconductor
10 400
100
Output Power
−10
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
−40
IMD, THIRD ORDER
−50
INTERMODULATION DISTORTION (dBc)
−60
1
Figure 6. Third Order Intermodulation Distortion
IDQ = 500 mA
700 mA
1400 mA
1100 mA
950 mA
10
P
, OUTPUT POWER (WATTS) PEP
out
100
versus Output Power
MRFE6S9130HR3 MRFE6S9130HSR3
400
5
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, P
IDQ = 950 mA, Two−Tone Measurements
−10
(f1 + f2)/2 = Center Frequency of 880 MHz
= 130 W (PEP)
out
−20
IM3−L
−30
−40
IM5−L
−50
IMD, INTERMODULATION DISTORTION (dBc)
−60
160
IM3−U
IM5−U
IM7−U
IM7−L
10
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
60
V
= 28 Vdc, IDQ = 950 mA, f = 880 MHz
DD
N−CDMA IS−95, Pilot, Sync, Paging
50
Traffic Codes 8 Through 13
40
, POWER GAIN (dB)
ps
30
20
G
ps
10
60
59
58
57
P3dB = 52.26 dBm (168.27 W)
56
55
P1dB = 51.15 dBm
54
(130.31 W)
53
, OUTPUT POWER (dBm)
out
52
P
51
50
31
Figure 8. Pulsed CW Output Power versus
ACPR
η
D
ALT1
P6dB = 52.95 dBm (197.24 W)
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 µsec(on), 1% Duty Cycle, f = 880 MHz
3332 3534 36
Pin, INPUT POWER (dBm)
Input Power
−20
−30
−40
−50
TC = −30_C
85_C
−60
−70
25_C
0
, DRAIN EFFICIENCY (%), G
D
1 10 100
η
P
, OUTPUT POWER (WATTS) CW
out
−80
200
Figure 9. Single- Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
Ideal
37 38 39
ALT1, CHANNEL POWER (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Actual
40
MRFE6S9130HR3 MRFE6S9130HSR3
6
21
G
ps
20
19
18
TC = −30_C
25_C
85_C
17
, POWER GAIN (dB)
ps
16
G
VDD = 28 Vdc
η
15
D
IDQ = 950 mA
f = 880 MHz
14
1
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
25_C
70
60
−30_C
85_C
50
40
30
20
, DRAIN EFFICIENCY (%)
D
η
10
0
10010
400
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
19
18
17
, POWER GAIN (dB)
16
ps
G
15
14
0 20050
VDD = 24 V
100 150
P
, OUTPUT POWER (WATTS) CW
out
28 V
Figure 11. Power Gain versus Output Power
32 V
IDQ = 950 mA
f = 880 MHz
250
8
10
7
10
6
MTTF (HOURS)
10
5
10
90
110 130 150 170 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, P
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
= 27 W Avg., and ηD = 30.5%.
out
210 230
Figure 12. MTTF versus Junction Temperature
250
100
10
1
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
0.01
PROBABILITY (%)
0.001
0.0001
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0
Figure 13. Single- Carrier CCDF N - CDMA
N- CDMA TEST SIGNAL
2468
PEAK−TO−AVERAGE (dB)
−10
−20
−30
−40
−50
−ALT1 in 30 kHz
−3.6
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Integrated BW
−1.5
−60
(dB)
−70
−80
−90
10
−100
−110
1.2288 MHz
Channel BW
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f, FREQUENCY (MHz)
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+ACPR in 30 kHz
Integrated BW
1.5
0.7 2.2
+ALT1 in 30 kHz
Integrated BW
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2.9
3.6
Figure 14. Single- Carrier N -CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
7
f = 910 MHz
Z
load
Zo = 2 Ω
f = 910 MHz
Z
source
VDD = 28 Vdc, IDQ = 950 mA, P
f
MHz
Z
source
Ω
f = 850 MHz
f = 850 MHz
= 27 W Avg.
out
Z
load
Ω
Figure 15. Series Equivalent Source and Load Impedance
MRFE6S9130HR3 MRFE6S9130HSR3
8
850
865
880
0.89 - j1.18
0.87 - j1.03
0.85 - j0.89
895
910 1.68 + j0.71
Z
source
Z
load
Input
Matching
Network
0.84 - j0.64
= Test circuit impedance as measured from
gate to ground.
= Test circuit impedance as measured
from drain to ground.
Device
Under
Test
Z
source
1.50 - j0.09
1.52 + j0.11
1.55 + j0.31
1.60 + j0.510.83 - j0.75
Z
load
Output
Matching
Network
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
(FLANGE)
H
A
B
B
E
G
1
2
D
M
bbb B
(FLANGE)
M
A
T
A
Q2X
3
K
M
(INSULATOR)
M
M
bbb B
T
(LID)
N
M
ccc B
T
C
SEATING
T
PLANE
M
bbb B
M
A
M
A
M
A
T
M
M
CASE 465- 06
M
M
ccc B
aaa B
A
T
M
A
T
(LID)
R
M
(INSULATOR)
S
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
M
M
F
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.66 19.96
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERSINCHES
ISSUE G
NI- 780
MRFE6S9130HR3
U
4X
(FLANGE)
B
B
(FLANGE)
H
A
bbb B
E
(FLANGE)
Z
4X
1
2
D
M
M
A
T
3
A
(LID)
K
2X
M
(LID)
N
M
ccc B
(INSULATOR)
M
M
bbb B
C
SEATING
T
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
(LID)
M
A
T
A
T
M
M
M
M
ccc B
M
aaa B
R
M
(INSULATOR)
S
M
M
M
A
T
A
T
F
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
N 0.772 0.788 19.61 20.02
R 0.365 0.375 9.27 9.53
S 0.365 0.375 9.27 9.52
U −−− 0.040 −−− 1.02
Z −−− 0.030 −−− 0.76
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERSINCHES
CASE 465A- 06
ISSUE H
NI- 780S
MRFE6S9130HSR3
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 April 2007 • Initial Release of Data Sheet
1 Dec. 2008 • Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production
test, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for V
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
, On Characteristics table, p. 2
GS(Q)
MRFE6S9130HR3 MRFE6S9130HSR3
10
RF Device Data
Freescale Semiconductor
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Document Number: MRFE6S9130H
RF Device Data
Rev. 1, 12/2008
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
11
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