Freescale MRF9135LR3, MRF9135LSR3 Technical Data
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Document Number: MRF9135L
Rev. 8, 5/2006
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large -signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical N- CDMA Performance @ 880 MHz, 26 Volts, I
IS- 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: - 47 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
N
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
RMATI
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
= 1100 mA
DQ
MRF9135LR3
MRF9135LSR3
880 MHz, 135 W, 26 V
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9135LR3
CASE 465A- 06, STYLE 1
NI-780S
MRF9135LSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
HIVE INF
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature T
AR
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case R
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model C7 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
DSS
GS
P
stg
θ
D
C
J
JC
- 0.5, +65 Vdc
- 0.5, +15 Vdc
- 65 to +200 °C
298
1.7
150 °C
200 °C
(1)
0.6 °C/W
W
W/°C
Unit
ARCHIVE INFORMATION
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
1
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Table 4. Electrical Characteristics
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
= 65 Vdc, VGS = 0 Vdc)
DS
Zero Gate Voltage Drain Leakage Current
= 26 Vdc, VGS = 0 Vdc)
(V
DS
Gate-Source Leakage Current
(V
= 5 Vdc, VDS = 0 Vdc)
GS
On Characteristics
Gate Threshold Voltage
(V
= 10 Vdc, ID = 450 µA)
DS
Gate Quiescent Voltage
(V
= 26 Vdc, ID = 1100 mAdc)
DS
Drain-Source On - Voltage
N
(V
= 10 Vdc, ID = 3 Adc)
GS
Forward Transconductance
(V
= 10 Vdc, ID = 9 Adc)
DS
Dynamic Characteristics
Output Capacitance
(V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
DS
Reverse Transfer Capacitance
(V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
RMATI
HIVE INF
AR
DS
Functional Tests (In Freescale Test Fixture, 50 ohm system) Single - Carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carrier,
PAR = 9.8 dB @ 0.01% Probability on CCDF
Common-Source Amplifier Power Gain
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Drain Efficiency
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Adjacent Channel Power Ratio
(V
= 26 Vdc, P
DD
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
Input Return Loss
(V
= 26 Vdc, P
DD
f = 880.0 MHz)
Common-Source Amplifier Power Gain
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
Drain Efficiency
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
Adjacent Channel Power Ratio
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
Input Return Loss
(V
= 26 Vdc, P
DD
f = 865 MHz and 895 MHz)
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
= 25 W Avg. N-CDMA, IDQ = 1100 mA,
out
(TC = 25°C, 50 ohm system unless otherwise noted)
Symbol Min Typ Max Unit
I
DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
C
oss
C
rss
G
ps
η 22 25 — %
ACPR — -47 -45 dBc
IRL — - 13.5 -9 dB
G
ps
η — 24 — %
ACPR — -46 — dBc
IRL — - 12.5 — dB
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
2 2.8 4 Vdc
3.25 3.7 5 Vdc
— 0.19 0.4 Vdc
— 12 — S
— 109 — pF
— 4.4 — pF
16 17.8 — dB
— 17 — dB
ARCHIVE INFORMATION
MRF9135LR3 MRF9135LSR3
2
RF Device Data
Freescale Semiconductor
C
O
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V
GG
+
C9 C8 C7
B2
B1
V
+++
L1
C18 C20 C21
C19
C22L2
+
C23
DD
C11
DUT
C10
Z12
Z11Z10
C13
C12
Z11 0.105″ x 0.630″ Microstrip
Z12 0.145″ x 0.630″ Microstrip
Z13 0.200″ x 0.630″ x 0.220″ Taper
Z14 0.180″ x 0.220″ Microstrip
Z15 0.110″ x 0.220″ Microstrip
Z16 0.200″ x 0.220″ Microstrip
Z17 0.900″ x 0.080″ Microstrip
Z18 0.360″ x 0.080″ Microstrip
Z19 0.410″ x 0.080″ Microstrip
PCB Arlon GX- 0300 - 55 - 22, 0.030″
Z15
C14
Z16Z13 Z14 Z17 Z18 Z19
C17
C16C15
, εr = 2.55
INPUT
N
RF
Z1
Z2
C1
Z4
Z3 Z8 Z9
C2
Z1 0.430″ x 0.080″ Microstrip
Z2 0.430″ x 0.080″ Microstrip
Z3 0.800″ x 0.080″ Microstrip
Z4 0.200″ x 0.220″ Microstrip
Z5 0.110″ x 0.220″ Microstrip
Z6 0.175″ x 0.220″ Microstrip
Z7 0.200″ x 0.220″ x 0.630″ Taper
Z8 0.250″ x 0.630″ Microstrip
Z9 0.050″ x 0.630″ Microstrip
Z10 0.050″ x 0.630″ Microstrip
Z5 Z6 Z7
C3
C4
C5
C6
Figure 1. 880 MHz Test Circuit Schematic
RMATI
Table 5. 880 MHz Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Ferrite Beads, Short 2743019447 Fair Rite
C1, C7, C17, C18 47 pF Chip Capacitors 100B470JP 500X ATC
C2, C16 0.6-4.5 Variable Capacitors, Gigatrim 27271SL Johanson
C3 8.2 pF Chip Capacitor 100B8R2BP 500X AT C
C4, C15 0.8-8.0 Variable Capacitors, Gigatrim 27291SL Johanson
C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC
C8 20K pF Chip Capacitor 200B203MP50X ATC
C9, C20, C21, C22 10 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet
HIVE INF
C10, C11, C12, C13 7.5 pF Chip Capacitors 100B7R5JP 500X AT C
C14 11 pF Chip Capacitor 100B110JP 500X AT C
C19 0.56 µF, 50 V Chip Capacitor C1825C564K5RA7800 Kemet
C23 470 µF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi- Con
L1, L2 12.5 nH Coilcraft inductors A04T-5 Coilcraft
AR
WB1, WB2 10 mil Brass Shim (0.205 x 0.530) RF- Design Lab RF- Design Lab
RF
OUTPUT
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF9135LR3 MRF9135LSR3
3
C
O
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C9 B1
B2
C23
C8
C20 C21 C22
C19
N
RMATI
C7
L1
C1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
C2
C3
C4
Figure 2. 880 MHz Test Circuit Component Layout
C5
WB1 WB2
C6
C10
C12
CUT OUT AREA
C11
C13
C14
C18
L2
C15
C16
MRF9135L
900 MHz
Rev−02
C17
HIVE INF
AR
MRF9135LR3 MRF9135LSR3
4
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
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