Freescale MRF9060NR1 Technical Data

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Document Number: MRF9060N

Rev. 13, 6/2009

Designed for broadband commercial and industrial applications with frequen­cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common-source amplifier applications in 26 volt

N

base station equipment.

• Typical Performance at 945 MHz, 26 Volts

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Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Integrated ESD Protection

• 200_C Capable Plastic Package

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• TO-270 -2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case R

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M2 (Minimum)

Charge Device Model C6 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113, IPC/JEDEC J- STD -020 3 260 °C

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

DSS

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P

stg

θ

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JC

MRF9060NR1

945 MHz, 60 W, 26 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

CASE 1265-09, STYLE 1

TO-270- 2

PLASTIC

- 0.5, +65 Vdc

- 0.5, +15 Vdc

223

1.79

- 65 to +150 °C

200 °C

(1)

0.56 °C/W

W

W/°C

Unit

NOT RECOMMENDED FOR NEW DESIGN

 Freescale Semiconductor, Inc., 2008- 2009. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF9060NR1

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Table 5. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

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Gate- Source Leakage Current

= 5 Vdc, VDS = 0 Vdc)

(V

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On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 450 mAdc)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 1.3 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 4 Adc)

Dynamic Characteristics

Input Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two- Tone Common- Source Amplifier Power Gain

(VDD = 26 Vdc, P
f1 = 945.0 MHz, f2 = 945.1 MHz)

Two- Tone Drain Efficiency

(VDD = 26 Vdc, P
f1 = 945.0 MHz, f2 = 945.1 MHz)

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, P
f1 = 945.0 MHz, f2 = 945.1 MHz)

Input Return Loss

(VDD = 26 Vdc, P
f1 = 945.0 MHz, f2 = 945.1 MHz)

Two- Tone Common- Source Amplifier Power Gain

(VDD = 26 Vdc, P
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)

Two- Tone Drain Efficiency

(VDD = 26 Vdc, P
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, P
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)

Input Return Loss

(VDD = 26 Vdc, P
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

= 60 W PEP, IDQ = 450 mA,

out

(TA = 25°C unless otherwise noted)

I

DSS

I

DSS

I

GSS

V

GS(th)

V

GS(Q)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 37 40 — %

IMD — - 31.5 -28 dBc

IRL — - 14.5 -9 dB

G

ps

η — 40 — %

IMD — -31 — dBc

IRL — - 12.5 — dB

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2 2.8 4 Vdc

3 3.7 5 Vdc

— 0.21 0.4 Vdc

— 5.3 — S

— 101 — pF

— 53 — pF

— 2.5 — pF

17 18 — dB

— 18 — dB

NOT RECOMMENDED FOR NEW DESIGN

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MRF9060NR1

RF Device Data

Freescale Semiconductor

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RF

INPUT

+

C6

Z1 Z3 Z7

C1

C7

Z4Z2

C2

L1

Z8 Z9

C3

C5

B2B1

+

+

L2

C9C4

Z11

DUT

Z10Z5 Z6

C8

C14 C16

Z14Z13Z12

C15

Z15 Z17

Z16

C10 C11 C12

C13

V

DD

+

C17

RF

OUTPUT

Z18

Z1 0.240″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.100″ x 0.270″ x 0.080″, Taper
Z5 0.330″ x 0.270″ Microstrip
Z6 0.120″ x 0.270″ Microstrip
Z7 0.270″ x 0.520″ x 0.140″, Taper
Z8 0.240″ x 0.520″ Microstrip
Z9 0.340″ x 0.520″ Microstrip

Figure 1. 930- 960 MHz Broadband Test Circuit Schematic

Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values

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Part Description Part Number Manufacturer

B1 Short Ferrite Bead 2743019447 Fair-Rite

B2 Long Ferrite Bead 2743029446 Fair- Rite

C1, C7, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC

C2, C3, C11 0.8- 8.0 Gigatrim Variable Capacitors 27291SL Johanson

C4, C5 11 pF Chip Capacitors (MRF9060NR1)

C6, C15, C16

C8, C9 10 pF Chip Capacitors ATC100B100JT500XT Newark

C10 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC

C12 1.7 pF Chip Capacitor ATC100B1R7BT500XT ATC

C17

L1, L2 12.5 nH Inductors A04T- 5 Coilcraft

Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu RF -35- 0300 Taconic

10 pF Chip Capacitors (MRF9060NBR1)

10 mF, 35 V Tantalum Chip Capacitors

220 mF Electrolytic Chip Capacitor

Z10 0.060″ x 0.520″ Microstrip
Z11 0.360″ x 0.270″ Microstrip
Z12 0.060″ x 0.270″ Microstrip
Z13 0.130″ x 0.060″ Microstrip
Z14 0.300″ x 0.060″ Microstrip
Z15 0.210″ x 0.060″ Microstrip
Z16 0.600″ x 0.060″ Microstrip
Z17 0.290″ x 0.060″ Microstrip
Z18 0.340″ x 0.060″ Microstrip

ATC100B110JT500XT
ATC100B100JT500XT

T491D106K035AT Kemet

MCAX63V227M13X22 Multicomp

ATC

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RF Device Data
Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

MRF9060NR1

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INPUT

C1

C6

V

GG

B1

C2

C7

B2

C14

WB1

C4

WB2

L1

C3

L2

C8
C9

V

DD

C15 C16

C10C5C11 C12 C13

C17

OUTPUT

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

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CUT OUT AREA

Figure 2. 930- 960 MHz Broadband Test Circuit Component Layout

MRF9060M
MRF9060MB

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RF Device Data

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TYPICAL CHARACTERISTICS

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IDQ = 625 mA

18.5

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17.5

, POWER GAIN (dB)

ps

G

17

16.5

Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus

500 mA

450 mA

275 mA

P

, OUTPUT POWER (WATTS) PEP

out

, POWER GAIN (dB)

ps

G

101 100

19

G

18 45

17 40

16 35

15

14

13

12

11

Figure 3. Class AB Broadband Circuit Performance

VDD = 26 Vdc
P
I

DQ

Two−Tone, 100 kHz Tone Spacing

VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz

ps

η

= 60 W (PEP)

out

= 450 mA

IMD

IRL

f, FREQUENCY (MHz)

100

955950945940935930

−15

−20

−25

−30

−35

−40

−45

INTERMODULATION DISTORTION (dBc)IMD,

−50

−55
110

960

IDQ = 275 mA

450 mA

500 mA

P

, OUTPUT POWER (WATTS) PEP

out

50

, DRAINη

EFFICIENCY (%)

−28

−30

−32

−34
DISTORTION (dBc)

IMD, INTERMODULATION

−36

625 mA

Output Power

−10

−12

−14

−16

−18

LOSS (dB)

IRL, INPUT RETURN

VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz

−10

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−20

−30

−40

−50

−60

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INTERMODULATION DISTORTION (dBc)IMD,

−70

−80

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RF Device Data
Freescale Semiconductor

VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz

110

P

out

Figure 6. Intermodulation Distortion Products

3rd Order

5th Order

7th Order

, OUTPUT POWER (WATTS) PEP

versus Output Power

100

20

G

18 50

16 40

14 30

12 20

, POWER GAIN (dB)

ps

G

10 10

8

0.1

P

out

Figure 7. Power Gain and Efficiency versus

ps

η

110

, OUTPUT POWER (WATTS) AVG.

Output Power

VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz

MRF9060NR1

100

60

, DRAIN EFFICIENCY (%)η

0

NOT RECOMMENDED FOR NEW DESIGN

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TYPICAL CHARACTERISTICS

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G

18 40

16 20

14 0

VDD = 26 Vdc
IDQ = 450 mA

12

, POWER GAIN (dB)

f1 = 945 MHz

ps

G

f2 = 945.1 MHz

10

8

110

Figure 8. Power Gain, Efficiency, and IMD versus Output Power

11

10

)

2

10

10

ps

η

IMD

P

, OUTPUT POWER (WATTS) PEP

out

100

60

−20

−40

−60

INTERMODULATION DISTORTION (dBc)IMD,

, DRAIN EFFICIENCY (%)η

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10

MTTF FACTOR (HOURS X AMPS

8

10

90 110 130 150 170 190100 120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I

Figure 9. MTTF Factor versus Junction Temperature

2

for MTTF in a particular application.

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2

210

NOT RECOMMENDED FOR NEW DESIGN

MRF9060NR1

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Z

f = 930 MHz

f = 960 MHz

Z

source

VDD = 26 V, IDQ = 450 mA, P

f

MHz

930

945

960

= Test circuit impedance as measured from

source

= Test circuit impedance as measured

load

Z

source

Ω

0.63 + j0.57

0.60 + j0.41

0.57 + j0.45

gate to ground.

from drain to ground.

Zo = 2 Ω

= 60 W PEP

out

Z

load

f = 960 MHz

Z

load

Ω

1.8 + j0.84

1.7 + j0.55

1.6 + j0.36

f = 930 MHz

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RF Device Data
Freescale Semiconductor

Output
Matching
Network

Z

source

Device
Under
Test

Z

load

Input
Matching
Network

Figure 10. Series Equivalent Source and Load Impedance

NOT RECOMMENDED FOR NEW DESIGN

MRF9060NR1

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RF Device Data

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RF Device Data
Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

MRF9060NR1

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RF Device Data

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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

• AN3789: Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

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Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

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• Electromigration MTTF Calculator

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

12 Sept. 2008 • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.

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13 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

• Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 8- 10. Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min- Max .290 - .320 to .290 Min; E3 changed from Min -Max .150- .180 to .150 Min). Added JEDEC
Standard Package Number.

• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3

• Added Product Documentation and Revision History, p. 11

process as described in Product and Process Change Notification number, PCN13516, p. 1

• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 11

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RF Device Data
Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

MRF9060NR1

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How to Reach Us:

Home Page:

www.freescale.com

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Freescale Semiconductor, Inc.
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Tempe, Arizona 85284
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MMENDED F

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 Freescale Semiconductor, Inc. 2008- 2009. All rights reserved.

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MRF9060NR1

Document Number: MRF9060N
Rev. 13, 6/2009

12

NOT RECOMMENDED FOR NEW DESIGN

RoHS-compliant and/or Pb -free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS- compliant and/or non- Pb - free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.

For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.

RF Device Data

Freescale Semiconductor