Freescale MRF 6 V 2010 NBR 1, MRF 6 V 2010 NR 1 Service Manual

www.DataSheet4U.com

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFETs

Designed primarily for CW large -signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.

• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA,

= 10 Watts

P

out

Power Gain — 23.9 dB
Drain Efficiency — 62%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW

Output Power

Features

• Integrated ESD Protection

• Excellent Thermal Stability

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 200°C Capable Plastic Package

• RoHS Compliant

• TO-270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

• TO-272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

Document Number: MRF6V2010N

Rev. 1, 5/2007

MRF6V2010NR1

MRF6V2010NBR1

10- 450 MHz, 10 W, 50 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF6V2010NR1

CASE 1337-03, STYLE 1

TO-272-2

PLASTIC

MRF6V2010NBR1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Storage Temperature Range T

Operating Junction Temperature T

DSS

GS

stg

J

-0.5, +110 Vdc

-0.5, +10 Vdc

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 81°C, 10 W CW R

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

θ

JC

(1,2)

3.0 °C/W

Unit

 Freescale Semiconductor, Inc., 2007. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22 - A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J- STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 100 Vdc, VGS = 0 Vdc)

(V

DS

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Drain-Source Breakdown Voltage

(ID = 5 mA, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 28 µAdc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 70 mAdc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, P

Power Gain G

Drain Efficiency η

Input Return Loss IRL — -14 -9 dB

= 25°C unless otherwise noted)

C

I

DSS

I

DSS

V

(BR)DSS

I

GSS

V

GS(th)

V

GS(Q)

V

DS(on)

C

C

C

rss

oss

iss

ps

D

— — 2.5 mA

— — 50 µAdc

110 — — Vdc

— — 10 µAdc

1 1.68 3 Vdc

1.5 2.68 3.5 Vdc

— 0.26 — Vdc

— 0.13 — pF

— 7.3 — pF

— 16.3 — pF

= 10 W, f = 220 MHz, CW

out

22.5 23.9 25.5 dB

58 62 — %

ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.

MRF6V2010NR1 MRF6V2010NBR1

2

RF Device Data

Freescale Semiconductor

C14 C15

RF

OUTPUT

B2

V

SUPPLY

+

L2

B1

V

BIAS

+

+

C4C2

C5

RF

INPUT

C7C6

C8

L3

R1 L1

Z1

Z2 Z3 Z4

C1

Z5 Z11Z6

DUT

C9 C10

Z7

Z8 Z9

C3

C12 C13C11 C16

Z10

C18

C17

Z1 0.235″ x 0.082″ Microstrip
Z2 1.190″ x 0.082″ Microstrip
Z3 0.619″ x 0.082″ Microstrip
Z4 0.190″ x 0.270″ Microstrip
Z5 0.293″ x 0.270″ Microstrip
Z6 0.120″ x 0.270″ Microstrip

Z7 0.062″ x 0.270″ Microstrip
Z8 0.198″ x 0.082″ Microstrip
Z9 5.600″ x 0.082″ Microstrip
Z10 0.442″ x 0.082″ Microstrip
Z11 0.341″ x 0.082″ Microstrip
PCB Arlon GX- 0300 - 55 - 22, 0.030″, εr = 2.55

Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic

Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 95 Ω, 100 MHz Long Ferrite Beads 2743021447 Fair-Rite

C1, C8, C11, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC

C2 10 µF, 35 V Tantalum Capacitor T491D106K035AT Kemet

C3 22 µF, 35 V Tantalum Capacitor T491X226K035AT Kemet

C4, C13 39 K pF Chip Capacitors ATC200B393KT50XT ATC

C5, C14 22 K pF Chip Capacitors ATC200B223KT50XT ATC

C6, C15 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet

C7, C12 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet

C9 0.6-4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson

C10 12 pF Chip Capacitor ATC100B120JT500XT ATC

C16 470 µF, 63 V Electrolytic Capacitor ESMG630ELL471MK205 United Chemi-Con

C17 27 pF Chip Capacitor ATC100B270JT500XT ATC

L1 17.5 nH Inductor B06T CoilCraft

L2, L3 82 nH Inductors 1812SMS - 82NJ CoilCraft

R1 120 Ω, 1/4 W Chip Resistor CRCW12061200FKTA Vishay

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

3

C5

C14

C1

C2

C13

C15

L2

L3

C3

MRF6V2010N/NB

B1

Rev. 3

C4

R1

C6

C7

L1

C8

C12

C11

C10

C9

CUT OUT AREA

Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout

B2

C17

C16

C18

MRF6V2010NR1 MRF6V2010NBR1

4

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

100

C

iss

10

C

oss

1

C, CAPACITANCE (pF)

Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc

C

rss

0.1
02010

30

40 100

VDS, DRAIN−SOURCE VOLTAGE (VOLTS)

Figure 3. Capacitance versus Drain-Source Voltage

0.35

0.3
VGS = 3 V

0.25

0.2

2.75 V

0.15

2.63 V

0.1

, DRAIN CURRENT (AMPS)

D

I

0.05

2.5 V

0

0

20 120

40

60

80 100

DRAIN VOLTAGE (VOLTS)

Figure 5. DC Drain Current versus Drain Voltage

2.25 V

100

10

1

, DRAIN CURRENT (AMPS)

D

I

TC = 25°C

0.1

50

1

10

200

VDS, DRAIN−SOURCE VOLTAGE (VOLTS)

Figure 4. DC Safe Operating Area

25

IDQ = 45 mA

24

23

IDQ = 45 mA

38 mA

38 mA

30 mA

22

23 mA

21

, POWER GAIN (dB)

ps

20

15 mA

G

19

VDD = 50 Vdc
f1 = 220 MHz

18

0.1

120

P

, OUTPUT POWER (WATTS) CW

out

10

Figure 6. CW Power Gain versus Output Power

−20
15 mA

23 mA

−25

−30

30 mA

−35

38 mA

−40

DISTORTION (dBc)

−45

IMD, THIRD ORDER INTERMODULATION

−50

−55

IDQ = 60 mA

1

P

out

Figure 7. Third Order Intermodulation Distortion

RF Device Data
Freescale Semiconductor

45 mA

VDD = 50 Vdc
f1 = 220 MHz, f2 = 220.1 MHz
Two− Tone Measurements
100 kHz Tone Spacing

, OUTPUT POWER (WATTS) PEP

versus Output Power

10 20

47

45

P3dB = 40.87 dBm (12.2 W)

43

P1dB = 40.43 dBm (11.04 W)

41

, OUTPUT POWER (dBm)

out

P

39

VDD = 50 Vdc, IDQ = 30 mA

37

13 1715

f = 220 MHz

19 21

Pin, INPUT POWER (dBm)

Figure 8. CW Output Power versus Input Power

MRF6V2010NR1 MRF6V2010NBR1

Ideal

Actual

23

5

TYPICAL CHARACTERISTICS

26

24

22

20

18

16

, POWER GAIN (dB)

ps

G

14

12

VDD = 20 V

10

082

Figure 9. Power Gain versus Output Power

26

25

24

TC = −30_C

23

22

21

85_C

, POWER GAIN (dB)

ps

G

20

19

18

0.1

Figure 11. Power Gain and Drain Efficiency

40 V

35 V

30 V

25 V

46

P

, OUTPUT POWER (WATTS) CW

out

G

ps

η

25_C

D

10 12

VDD = 50 Vdc
IDQ = 30 mA
f = 220 MHz

1

P

, OUTPUT POWER (WATTS) CW

out

versus CW Output Power

45 V

IDQ = 30 mA
f = 220 MHz

−30_C

50 V

25_C

85_C

10 20

14

72

63

54

45

36

27

DRAIN EFFICIENCY (%)

18

D,

η

9

0

45

= −30_C

T

C

40

25_C

85_C

35

30

, OUTPUT POWER (dBm)

out

P

25

VDD = 50 Vdc
IDQ = 30 mA
f = 220 MHz

20

0

10 20

155

Pin, INPUT POWER (dBm)

Figure 10. Power Output versus Power Input

8

10

7

10

6

MTTF (HOURS)

10

5

10

90

110 130 150 170 190

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, P

= 10 W CW, and ηD = 62%.

out

MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.

210 230

25

250

MRF6V2010NR1 MRF6V2010NBR1

6

Figure 12. MTTF versus Junction Temperature

RF Device Data

Freescale Semiconductor

Z

source

Zo = 50 Ω

f = 220 MHz

Z

load

f = 220 MHz

VDD = 50 Vdc, IDQ = 30 mA, P

f

Z

MHz

source

W

= 10 W CW

out

Z

load

W

220 20 + j25 75 + j44

Z

= Test circuit impedance as measured from

source

Z

load

Input
Matching
Network

gate to ground.

= Test circuit impedance as measured

from drain to ground.

Output
Matching
Network

Z

source

Device
Under
Test

Z

load

Figure 13. Series Equivalent Source and Load Impedance

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

7

PACKAGE DIMENSIONS

MRF6V2010NR1 MRF6V2010NBR1

8

RF Device Data

Freescale Semiconductor

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

9

MRF6V2010NR1 MRF6V2010NBR1

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RF Device Data

Freescale Semiconductor

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

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MRF6V2010NR1 MRF6V2010NBR1

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RF Device Data

Freescale Semiconductor

RF Device Data
Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

13

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Feb. 2007 • Initial Release of Data Sheet

1 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,

C8, C11, C18, C4, C13, C5, and C14, p. 3

• Corrected Series Impedance Z
Impedance, p. 7

source

and Z

values, Fig. 13, Series Equivalent Source and Load

load

MRF6V2010NR1 MRF6V2010NBR1

14

RF Device Data

Freescale Semiconductor

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 Freescale Semiconductor, Inc. 2007. All rights reserved.

Document Number: MRF6V2010N

RF Device Data

Rev. 1, 5/2007

Freescale Semiconductor

MRF6V2010NR1 MRF6V2010NBR1

15