查询MRF6S23140H供应商
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Document Number: MRF6S9125
Rev. 1, 7/2005
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large- signal, common- source amplifier
applications in 28 volt base station equipment.
N-CDMA Application
• Typical Single-Carrier N -CDMA Performance: V
950 mA, P
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
= 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS- 95
out
= 28 Volts, IDQ =
DD
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V
P
= 60 Watts Avg., Full Frequency Band (865- 895 MHz or
out
921- 960 MHz)
= 28 Volts, IDQ = 700 mA,
DD
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: V
125 Watts, Full Frequency Band (921- 960 MHz)
= 28 Volts, IDQ = 700 mA, P
DD
out
=
Power Gain — 19 dB
Drain Efficiency — 62%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
Operation
DD
• Integrated ESD Protection
• N Suffix Indicates Lead- Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N- CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB - 4
PLASTIC
MRF6S9125NR1(MR1)
CASE 1484-02, STYLE 1
TO-272 WB - 4
PLASTIC
MRF6S9125NBR1(MBR1)
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate- Source Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
DSS
GS
P
stg
D
J
-0.5, +68 Vdc
-0.5, +12 Vdc
398
2.3
- 65 to +150 °C
200 °C
RF Device Data
Freescale Semiconductor
W
W/°C
1
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
R
θ
JC
(1,2)
0.44
0.45
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1B (Minimum)
Machine Model (per EIA/JESD22-A115) C (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J-STD - 020 3 260 °C
Table 5. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 950 mAdc)
Drain-Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 8 Adc)
Dynamic Characteristics
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, P
Power Gain G
Drain Efficiency η
Adjacent Channel Power Ratio ACPR — - 47.1 -45 dBc
Input Return Loss IRL — -16 -9 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part is internally input matched.
(3)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
C
DSS
DSS
GSS
g
fs
oss
rss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
1 2.1 3 Vdc
2 2.89 4 Vdc
0.05 0.23 0.3 Vdc
— 6 — S
— 60 — pF
— 2 — pF
= 27 W, f = 880 MHz
out
19 20.2 24 dB
29 31 — %
(continued)
Unit
°C/W
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (T
= 25°C unless otherwise noted) (continued)
C
Characteristic Symbol Min Typ Max Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
P
= 60 W Avg., 921 MHz<Frequency<960 MHz
out
Power Gain G
Drain Efficiency η
ps
D
= 28 Vdc, I
DD
— 20 — dB
— 40 — %
= 950 mA,
DQ
Error Vector Magnitude EVM — 1.5 — % rms
Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V
= 28 Vdc, I
DD
= 700 mA, P
DQ
= 125 W,
out
921 MHz<Frequency<960 MHz
Power Gain G
Drain Efficiency η
ps
D
— 19 — dB
— 62 — %
Input Return Loss IRL — -12 — dB
P
@ 1 dB Compression Point, CW
out
P1dB — 125 — W
(f = 880 MHz)
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
3
V
BIAS
+
C10 C6
C9
RF
INPUT
Z1C2Z2 Z3C1Z4 Z5 Z6 Z7
+
C8+C7
R2
R1
C3
V
Z17
SUPPLY
C23C19
RF
OUTPUT
+ +
C18 C20 C21 C22
L2
L1
C4
Z8
C5
Z10 Z11 Z12 Z14
Z9
C11
DUT
C12 C13
Z13
C14 C15 C16
Z15
+
Z16
C17
Z1, Z17 0.200″ x 0.080″ Microstrip
Z2 1.060″ x 0.080″ Microstrip
Z3 0.382″ x 0.220″ Microstrip
Z4 0.108″ x 0.220″ Microstrip
Z5 0.200″ x 0.420″ x 0.620″ Taper
Z6 0.028″ x 0.620″ Microstrip
Z7 0.236″ x 0.620″ Microstrip
Z8 0.050″ x 0.620″ Microstrip
Z9 0.238″ x 0.620″ Microstrip
Z10 0.057″ x 0.620″ Microstrip
Z11 0.119″ x 0.620″ Microstrip
Z12 0.450″ x 0.220″ Microstrip
Z13 0.061″ x 0.220″ Microstrip
Z14 0.078″ x 0.220″ Microstrip
Z15 0.692″ x 0.080″ Microstrip
Z16 0.368″ x 0.080″ Microstrip
PCB Arlon GX - 0300 -55-22, 0.030″, εr = 2.55
Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 20 pF Chip Capacitor 600B200FT250XT ATC
C2 6.2 pF Chip Capacitor 600B6R2BT250XT ATC
C3, C15 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C4, C5 11 pF Chip Capacitors 600B110FT250XT ATC
C6, C18, C19 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet
C7, C8 47 µF, 16 V Tantalum Capacitors 593D476X9016D2T Vishay
C9, C23 47 pF Chip Capacitors 700B470FW500XT ATC
C10 100 µF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay
C11, C12 12 pF Chip Capacitors 600B120FT250XT AT C
C13, C14 5.1 pF Chip Capacitors 600B5R1BT250XT AT C
C16 0.3 pF Chip Capacitor 700B0R3BW500XT AT C
C17 39 pF Chip Capacitor 700B390FW500XT ATC
C20, C21 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet
C22 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi -Con
L1 7.15 nH Inductor 1606-7J CoilCraft
L2 8.0 nH Inductor A03T CoilCraft
R1 15 Ω, 1/4 W Chip Resistor (1210) Dale/Vishay
R2 560 kΩ, 1/8 W Resistor (1206) Dale/Vishay
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
4
RF Device Data
Freescale Semiconductor
C9
C8 C7
C20 C21
C22
C1
C10
V
GG
R2
R1
C2
C6
C4
L1
C5
C3
C19
C11
CUT OUT AREA
L2
C12
C18
C13
C14
C15
V
C23
C16
900 MHz
TO272 WB
Rev. 0
DD
C17
Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
5
TYPICAL CHARACTERISTICS
G
ps
IRL
ACPR
34
32
30
28
−30
−40
−50
−60
20.5
20.3
20
η
D
19.8
19.5
19.3
, POWER GAIN (dB)
ps
19
G
18.8
V
= 28 Vdc, P
DD
IDQ = 950 mA, N−CDMA IS−95 Pilot
= 27 W (Avg.)
out
Sync, Paging, Traffic Codes 8 Through 13
ALT1
18.5
890880870860
900
−70
910850
f, FREQUENCY (MHz)
Figure 3. Single- Carrier N -CDMA Broadband Performance @ P
19.6
19.4
19.2
18.8
G
ps
η
D
V
= 28 Vdc, P
19
DD
IDQ = 950 mA, N−CDMA IS−95 Pilot
= 62.5 W (Avg.)
out
Sync, Paging, Traffic Codes 8 Through 13
52
48
44
40
−30
, DRAIN
D
η
EFFICIENCY (%)
−5
−10
−15
−20
ACPR (dBc), ALT1 (dBc)
−25
= 27 Watts Avg.
out
, DRAIN
D
η
EFFICIENCY (%)
−5
IRL, INPUT RETURN LOSS (dB)
18.6
, POWER GAIN (dB)
ps
18.4
G
18.2
18
Figure 4. Single- Carrier N -CDMA Broadband Performance @ P
22
21
20
19
, POWER GAIN (dB)
18
ps
G
17
16
1 300
IDQ = 1475 mA
1187 mA
950 mA
712 mA
475 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two− Tone Measurements, 100 MHz Tone Spacing
10
P
, OUTPUT POWER (WATTS) PEP
out
100
Figure 5. Two- Tone Power Gain versus
Output Power
IRL
f, FREQUENCY (MHz)
IMD, THIRD ORDER
ACPR
−40
−50
ALT1
−60
−70
900890880870860
910850
out
−10
−15
−20
ACPR (dBc), ALT1 (dBc)
−25
IRL, INPUT RETURN LOSS (dB)
= 62.5 Watts Avg.
−10
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two− Tone Measurements, 100 MHz Tone Spacing
−20
−30
IDQ = 1425 mA
712 mA
475 mA
−40
−50
INTERMODULATION DISTORTION (dBc)
1187 mA
950 mA
−60
1
P
out
10
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
300
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−10
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
−20
Two− Tone Measurements, Center Frequency = 880 MHz
−30
−40
3rd Order
−50
5th Order
−60
IMD, INTERMODULATION DISTORTION (dBc)
−70
1 300
7th Order
10
P
, OUTPUT POWER (WATTS) PEP
out
100
Figure 7. Intermodulation Distortion Products
versus Output Power
56
55
54
P1dB = 51.5 dBm (139.3 W)
53
−10
−20
−30
−40
−50
IMD, INTERMODULATION DISTORTION (dBc)
−60
0.1
Figure 8. Intermodulation Distortion Products
P3dB = 52.4 dBm (172.5 W)
VDD = 28 Vdc, P
= 125 W (PEP)
out
IDQ = 950 mA, Two− Tone Measurements
Center Frequency = 880 MHz
3rd Order
5th Order
7th Order
1 100
TWO−TONE SPACING (MHz)
versus Tone Spacing
Ideal
10
52
Actual
51
, OUTPUT POWER (dBm)
50
out
P
49
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
48
29
28
30 3231 3433 35
36
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
50
V
= 28 Vdc, IDQ = 950 mA
DD
TC = −30_C
f = 880 MHz, N−CDMA IS−95 (Pilot
Sync, Paging, Traffic Codes 8
40
Through 13)
, POWER GAIN (dB)
ps
30
G
20 −60
ps
η
D
85_C
−30_C
25_C
10
, DRAIN EFFICIENCY (%), G
D
η
25_C
0−80
0.1 10
1 100 200
P
, OUTPUT POWER (WATTS) AVG.
out
−30_C
85_C
25_C
ALT1
25_C
85_C
ACPR
−30
−40
−50
−70
ALT1, CHANNEL POWER (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 10. Single- Carrier N -CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
7
TYPICAL CHARACTERISTICS
22
21
20
19
18
, POWER GAIN (dB)
ps
G
17
TC = −30_C
25_C
85_C
η
D
25_C
16
85_C
15
1
P
out
10
, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
9
10
)
2
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
−30_C
G
100
70
21
60
20
50
40
30
ps
20
10
0
200
19
18
, POWER GAIN (dB)
ps
, DRAIN EFFICIENCY (%)
G
D
η
17
16
0
20 V
16 V
VDD = 12 V
50 100 200
P
, OUTPUT POWER (WATTS) CW
out
24 V
150
32 V
28 V
IDQ = 950 mA
f = 880 MHz
250
Figure 12. Power Gain versus Output Power
8
10
MTTF FACTOR (HOURS X AMPS
7
10
90 110 130 150 170 190
100 120 140 160 180 200
210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
2
for MTTF in a particular application.
D
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
8
RF Device Data
Freescale Semiconductor
N- CDMA TEST SIGNAL
100
10
1
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
0.01
PROBABILITY (%)
0.001
0.0001
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
0
Figure 14. Single- Carrier CCDF N - CDMA
2468
PEAK −TO−AVERAGE (dB)
−10
−20
−30
−40
−50
−60
(dB)
−70
−80
−90
10
−100
−110
−3.6
−2.9
−ACPR @ 30 kHz
Integrated BW
−1.5
−2.2
1.2288 MHz
Channel BW
+ACPR @ 30 kHz
Integrated BW
0.7 2.2
0−0.7
f, FREQUENCY (MHz)
1.5
2.9
3.6
Figure 15. Single- Carrier N -CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
9
f = 900 MHz
f = 900 MHz
f = 860 MHz
Z
source
f = 860 MHz
Z
load
Zo = 5 Ω
VDD = 28 Vdc, IDQ = 950 mA, P
f
MHz
860
865
870
Z
source
Ω
0.62 - j2.13
0.64 - j2.31
0.62 - j2.45
875
880 1.74 + j0.11
885
890
895
0.57 - j2.42
0.54 - j2.36
0.57 - j2.18
0.58 - j1.94
= 27 W Avg.
out
1.48 - j0.14
1.56 - j0.09
1.66 - j0.02
1.73 + j0.040.59 - j2.43
1.68 + j0.19
1.61 + j0.25
1.52 + j0.33
900 1.48 + j0.370.59 - j1.86
Z
= Test circuit impedance as measured from
source
Z
load
Input
Matching
Network
gate to ground.
= Test circuit impedance as measured
from drain to ground.
Device
Under
Test
Z
load
Ω
Output
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
11
NOTES
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
12
RF Device Data
Freescale Semiconductor
NOTES
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
13
PACKAGE DIMENSIONS
D1
A2
NOTE 7
GATE LEAD
4X
b1
M
aaa C
A1
c1
2X
D2
D3
B
E1
2X
E3
A
DRAIN LEAD
D
4X
e
A
2X
E
DATUM
H
PLANE
F
ZONE J
A
2X
E2
E5
E4
4
E5
BOTTOM VIEW
SEATING
C
PLANE
PIN 5
NOTE 8
1
23
CASE 1486- 03
ISSUE C
TO- 270 WB- 4
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M− 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H− .
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B − TO BE DETERMINED AT
DATUM PLANE −H −.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIMAMIN MAX MIN MAX
.100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .712 .720 18.08 18.29
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48
D3 .600 − −− 15.24 − −−
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56
E3 .124 .132 3.15 3.35
E4 .270 − − − 6.86 − −−
E5 .346 .350 8.79 8.89
F
.025 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e
.106 BSC
aaa
.004 0.10
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
0.64 BSC
2.69 BSC
PLASTIC
MRF6S9125NR1(MR1)
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
14
RF Device Data
Freescale Semiconductor
2X r1
M
aaa CA
E1
B
A
E2
B
PIN 5
D1
A2
7
GATE LEAD
4X b1
M
aaa CA
A1
c1
DRAIN LEAD
3
D
D2
4X
e
E
F
DATUM
H
PLANE
ZONE J
A
E3
YY
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
CASE 1484- 02
ISSUE B
4
E3
VIEW Y- Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M− 1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H− .
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B − TO BE DETERMINED AT
DATUM PLANE −H −.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
INCHES
DIMAMIN MAX MIN MAX
.100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .928 .932 23.57 23.67
D1
.810 BSC 20.57 BSC
D2 .600 − −− 15.24 − −−
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .270 − − − 6.86 − −−
E3 .346 .350 8.79 8.89
F
.025 BSC 0.64 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
e
.106 BSC
aaa
.004
MILLIMETERS
2.69 BSC
.10
NOTE 8
1
2
TO- 272 WB- 4
PLASTIC
MRF6S9125NBR1(MBR1)
RF Device Data
Freescale Semiconductor
MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
15
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MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1
Document Number: MRF6S9125
Rev. 1, 7/2005
16
RF Device Data
Freescale Semiconductor
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