Datasheet MRF6S9125NR1, MRF6S9125NBR1, MRF6S9125MR1, MRF6S9125MBR1 Datasheet (Freescale)

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Document Number: MRF6S9125

Rev. 1, 7/2005

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment.

N-CDMA Application

• Typical Single-Carrier N -CDMA Performance: V

950 mA, P CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel

= 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS- 95

out

= 28 Volts, IDQ =

Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 20.2 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth

GSM EDGE Application

• Typical GSM EDGE Performance: V

= 60 Watts Avg., Full Frequency Band (865- 895 MHz or

out

921- 960 MHz)

= 28 Volts, IDQ = 700 mA,

Power Gain — 20 dB Drain Efficiency — 40% (Typ) Spectral Regrowth @ 400 kHz Offset = -63 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM — 1.5% rms

GSM Application

• Typical GSM Performance: V

125 Watts, Full Frequency Band (921- 960 MHz)

= 28 Volts, IDQ = 700 mA, P

out

Power Gain — 19 dB Drain Efficiency — 62%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,

@ f = 880 MHz

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

Operation

• Integrated ESD Protection

• N Suffix Indicates Lead- Free Terminations

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S9125NR1

MRF6S9125NBR1

MRF6S9125MR1

MRF6S9125MBR1

880 MHz, 27 W AVG., 28 V

SINGLE N- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB - 4

PLASTIC

MRF6S9125NR1(MR1)

CASE 1484-02, STYLE 1

TO-272 WB - 4

PLASTIC

MRF6S9125NBR1(MBR1)

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

DSS

stg

-0.5, +68 Vdc

-0.5, +12 Vdc

398

2.3

- 65 to +150 °C

200 °C

RF Device Data Freescale Semiconductor

W/°C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW

(1,2)

0.44

0.45

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1B (Minimum)

Machine Model (per EIA/JESD22-A115) C (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J-STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 950 mAdc)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 2.74 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 8 Adc)

Dynamic Characteristics

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, P

Power Gain G

Drain Efficiency η

Adjacent Channel Power Ratio ACPR — - 47.1 -45 dBc

Input Return Loss IRL — -16 -9 dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

3. Part is internally input matched.

(3)

= 25°C unless otherwise noted)

GS(th)

GS(Q)

DS(on)

DSS

GSS

oss

rss

— — 10 µAdc

— — 1 µAdc

1 2.1 3 Vdc

2 2.89 4 Vdc

0.05 0.23 0.3 Vdc

— 6 — S

— 60 — pF

— 2 — pF

= 27 W, f = 880 MHz

out

19 20.2 24 dB

29 31 — %

(continued)

Unit

°C/W

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

Table 5. Electrical Characteristics (T

= 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V

= 60 W Avg., 921 MHz<Frequency<960 MHz

out

Power Gain G

Drain Efficiency η

= 28 Vdc, I

— 20 — dB

— 40 — %

= 950 mA,

Error Vector Magnitude EVM — 1.5 — % rms

Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc

Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc

Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V

= 28 Vdc, I

= 700 mA, P

= 125 W,

out

921 MHz<Frequency<960 MHz

Power Gain G

Drain Efficiency η

— 19 — dB

— 62 — %

Input Return Loss IRL — -12 — dB

@ 1 dB Compression Point, CW

out

P1dB — 125 — W

(f = 880 MHz)

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

BIAS

C10 C6

INPUT

Z1C2Z2 Z3C1Z4 Z5 Z6 Z7

C8+C7

Z17

SUPPLY

C23C19

OUTPUT

+ +

C18 C20 C21 C22

Z10 Z11 Z12 Z14

C11

DUT

C12 C13

Z13

C14 C15 C16

Z15

Z16

C17

Z1, Z17 0.200″ x 0.080″ Microstrip Z2 1.060″ x 0.080″ Microstrip Z3 0.382″ x 0.220″ Microstrip Z4 0.108″ x 0.220″ Microstrip Z5 0.200″ x 0.420″ x 0.620″ Taper Z6 0.028″ x 0.620″ Microstrip Z7 0.236″ x 0.620″ Microstrip Z8 0.050″ x 0.620″ Microstrip Z9 0.238″ x 0.620″ Microstrip

Z10 0.057″ x 0.620″ Microstrip Z11 0.119″ x 0.620″ Microstrip Z12 0.450″ x 0.220″ Microstrip Z13 0.061″ x 0.220″ Microstrip Z14 0.078″ x 0.220″ Microstrip Z15 0.692″ x 0.080″ Microstrip Z16 0.368″ x 0.080″ Microstrip PCB Arlon GX - 0300 -55-22, 0.030″, εr = 2.55

Figure 1. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Schematic

Table 6. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1 20 pF Chip Capacitor 600B200FT250XT ATC

C2 6.2 pF Chip Capacitor 600B6R2BT250XT ATC

C3, C15 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson

C4, C5 11 pF Chip Capacitors 600B110FT250XT ATC

C6, C18, C19 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet

C7, C8 47 µF, 16 V Tantalum Capacitors 593D476X9016D2T Vishay

C9, C23 47 pF Chip Capacitors 700B470FW500XT ATC

C10 100 µF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay

C11, C12 12 pF Chip Capacitors 600B120FT250XT AT C

C13, C14 5.1 pF Chip Capacitors 600B5R1BT250XT AT C

C16 0.3 pF Chip Capacitor 700B0R3BW500XT AT C

C17 39 pF Chip Capacitor 700B390FW500XT ATC

C20, C21 22 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet

C22 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi -Con

L1 7.15 nH Inductor 1606-7J CoilCraft

L2 8.0 nH Inductor A03T CoilCraft

R1 15 Ω, 1/4 W Chip Resistor (1210) Dale/Vishay

R2 560 kΩ, 1/8 W Resistor (1206) Dale/Vishay

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

C8 C7

C20 C21

C22

C10

C19

C11

CUT OUT AREA

C12

C18

C13

C14

C15

C23

C16

900 MHz TO272 WB Rev. 0

C17

Figure 2. MRF6S9125NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

TYPICAL CHARACTERISTICS

IRL

ACPR

−30

−40

−50

−60

20.5

20.3

19.8

19.5

19.3

, POWER GAIN (dB)

18.8

= 28 Vdc, P

IDQ = 950 mA, N−CDMA IS−95 Pilot

= 27 W (Avg.)

out

Sync, Paging, Traffic Codes 8 Through 13

ALT1

18.5 890880870860

900

−70

910850

f, FREQUENCY (MHz)

Figure 3. Single- Carrier N -CDMA Broadband Performance @ P

19.6

19.4

19.2

18.8

= 28 Vdc, P

IDQ = 950 mA, N−CDMA IS−95 Pilot

= 62.5 W (Avg.)

out

Sync, Paging, Traffic Codes 8 Through 13

−30

, DRAIN

EFFICIENCY (%)

−5

−10

−15

−20

ACPR (dBc), ALT1 (dBc)

−25

= 27 Watts Avg.

out

, DRAIN

EFFICIENCY (%)

−5

IRL, INPUT RETURN LOSS (dB)

18.6

, POWER GAIN (dB)

18.4

18.2

Figure 4. Single- Carrier N -CDMA Broadband Performance @ P

, POWER GAIN (dB)

1 300

IDQ = 1475 mA

1187 mA

950 mA

712 mA

475 mA

VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two− Tone Measurements, 100 MHz Tone Spacing

, OUTPUT POWER (WATTS) PEP

out

100

Figure 5. Two- Tone Power Gain versus

Output Power

IRL

f, FREQUENCY (MHz)

IMD, THIRD ORDER

ACPR

−40

−50

ALT1

−60

−70

900890880870860

910850

out

−10

−15

−20

ACPR (dBc), ALT1 (dBc)

−25 IRL, INPUT RETURN LOSS (dB)

= 62.5 Watts Avg.

−10 VDD = 28 Vdc

f1 = 880 MHz, f2 = 880.1 MHz Two− Tone Measurements, 100 MHz Tone Spacing

−20

−30

IDQ = 1425 mA

712 mA

475 mA

−40

−50

INTERMODULATION DISTORTION (dBc)

1187 mA

950 mA

−60

out

, OUTPUT POWER (WATTS) PEP

Figure 6. Third Order Intermodulation Distortion

versus Output Power

100

300

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

−10 VDD = 28 Vdc, IDQ = 950 mA

f1 = 880 MHz, f2 = 880.1 MHz

−20 Two− Tone Measurements, Center Frequency = 880 MHz

−30

−40

3rd Order

−50

5th Order

−60

IMD, INTERMODULATION DISTORTION (dBc)

−70

1 300

7th Order

, OUTPUT POWER (WATTS) PEP

out

100

Figure 7. Intermodulation Distortion Products

versus Output Power

P1dB = 51.5 dBm (139.3 W)

−10

−20

−30

−40

−50

IMD, INTERMODULATION DISTORTION (dBc)

−60

0.1

Figure 8. Intermodulation Distortion Products

P3dB = 52.4 dBm (172.5 W)

VDD = 28 Vdc, P

= 125 W (PEP)

out

IDQ = 950 mA, Two− Tone Measurements Center Frequency = 880 MHz

3rd Order

5th Order

7th Order

1 100

TWO−TONE SPACING (MHz)

versus Tone Spacing

Ideal

Actual

, OUTPUT POWER (dBm)

out

VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 880 MHz

30 3231 3433 35

Pin, INPUT POWER (dBm)

Figure 9. Pulse CW Output Power versus

Input Power

= 28 Vdc, IDQ = 950 mA

TC = −30_C f = 880 MHz, N−CDMA IS−95 (Pilot Sync, Paging, Traffic Codes 8

Through 13)

, POWER GAIN (dB)

20 −60

85_C

−30_C

25_C

, DRAIN EFFICIENCY (%), G

25_C

0−80

0.1 10

1 100 200

, OUTPUT POWER (WATTS) AVG.

out

−30_C

85_C

25_C

ALT1

25_C

85_C

ACPR

−30

−40

−50

−70 ALT1, CHANNEL POWER (dBc)

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

Figure 10. Single- Carrier N -CDMA ACPR, ALT1, Power

Gain and Drain Efficiency versus Output Power

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

TYPICAL CHARACTERISTICS

, POWER GAIN (dB)

TC = −30_C

25_C

85_C

25_C

85_C

out

, OUTPUT POWER (WATTS) CW

Figure 11. Power Gain and Drain Efficiency

versus CW Output Power

)

VDD = 28 Vdc IDQ = 950 mA f = 880 MHz

−30_C

100

200

, POWER GAIN (dB)

, DRAIN EFFICIENCY (%)

20 V

16 V

VDD = 12 V

50 100 200

, OUTPUT POWER (WATTS) CW

out

24 V

150

32 V

28 V

IDQ = 950 mA f = 880 MHz

250

Figure 12. Power Gain versus Output Power

MTTF FACTOR (HOURS X AMPS

90 110 130 150 170 190

100 120 140 160 180 200

210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I

for MTTF in a particular application.

Figure 13. MTTF Factor versus Junction Temperature

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

N- CDMA TEST SIGNAL

100

0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

0.01

PROBABILITY (%)

0.001

0.0001

Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Figure 14. Single- Carrier CCDF N - CDMA

2468

PEAK −TO−AVERAGE (dB)

−10

−20

−30

−40

−50

−60

(dB)

−70

−80

−90

−100

−110

−3.6

−2.9

−ACPR @ 30 kHz Integrated BW

−1.5

−2.2

1.2288 MHz Channel BW

+ACPR @ 30 kHz

Integrated BW

0.7 2.2

0−0.7

f, FREQUENCY (MHz)

1.5

2.9

3.6

Figure 15. Single- Carrier N -CDMA Spectrum

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

f = 900 MHz

f = 860 MHz

source

f = 860 MHz

load

Zo = 5 Ω

VDD = 28 Vdc, IDQ = 950 mA, P

MHz

860

865

870

source

Ω

0.62 - j2.13

0.64 - j2.31

0.62 - j2.45

875

880 1.74 + j0.11

885

890

895

0.57 - j2.42

0.54 - j2.36

0.57 - j2.18

0.58 - j1.94

= 27 W Avg.

out

1.48 - j0.14

1.56 - j0.09

1.66 - j0.02

1.73 + j0.040.59 - j2.43

1.68 + j0.19

1.61 + j0.25

1.52 + j0.33

900 1.48 + j0.370.59 - j1.86

= Test circuit impedance as measured from

source

load

Input Matching Network

gate to ground.

= Test circuit impedance as measured

from drain to ground.

Device Under Test

load

Ω

Output Matching Network

source

load

Figure 16. Series Equivalent Source and Load Impedance

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

NOTES

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

NOTES

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

NOTES

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

PACKAGE DIMENSIONS

NOTE 7

GATE LEAD

aaa C

DRAIN LEAD

DATUM

PLANE

ZONE J

BOTTOM VIEW

SEATING

PLANE

PIN 5

NOTE 8

CASE 1486- 03

ISSUE C

TO- 270 WB- 4

NOTES:

1. CONTROLLING DIMENSION: INCH.

2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M− 1994.

3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE.

4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H− .

5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. DATUMS −A− AND −B − TO BE DETERMINED AT DATUM PLANE −H −.

7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG.

INCHES

DIMAMIN MAX MIN MAX

.100 .104 2.54 2.64

A1 .039 .043 0.99 1.09 A2 .040 .042 1.02 1.07

D .712 .720 18.08 18.29 D1 .688 .692 17.48 17.58 D2 .011 .019 0.28 0.48 D3 .600 − −− 15.24 − −−

E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .132 .140 3.35 3.56 E3 .124 .132 3.15 3.35 E4 .270 − − − 6.86 − −− E5 .346 .350 8.79 8.89

.025 BSC

b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28

.106 BSC

aaa

.004 0.10

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. GATE

5. SOURCE

MILLIMETERS

0.64 BSC

2.69 BSC

PLASTIC

MRF6S9125NR1(MR1)

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

RF Device Data

Freescale Semiconductor

2X r1

aaa CA

PIN 5

GATE LEAD

4X b1

aaa CA

DRAIN LEAD

DATUM

PLANE

ZONE J

SEATING PLANE

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. GATE

5. SOURCE

CASE 1484- 02

ISSUE B

VIEW Y- Y

NOTES:

1. CONTROLLING DIMENSION: INCH.

2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M− 1994.

3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE.

4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H− .

5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION.

6. DATUMS −A− AND −B − TO BE DETERMINED AT DATUM PLANE −H −.

7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.

8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG.

INCHES

DIMAMIN MAX MIN MAX

.100 .104 2.54 2.64

A1 .039 .043 0.99 1.09 A2 .040 .042 1.02 1.07

D .928 .932 23.57 23.67

.810 BSC 20.57 BSC

D2 .600 − −− 15.24 − −−

E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .270 − − − 6.86 − −− E3 .346 .350 8.79 8.89

.025 BSC 0.64 BSC

b1 .164 .170 4.17 4.32 c1 .007 .011 .18 .28

r1 .063 .068 1.60 1.73

.106 BSC

aaa

.004

MILLIMETERS

2.69 BSC .10

NOTE 8

TO- 272 WB- 4

PLASTIC

MRF6S9125NBR1(MBR1)

RF Device Data Freescale Semiconductor

MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

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MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1

Document Number: MRF6S9125 Rev. 1, 7/2005

RF Device Data

Freescale Semiconductor

Datasheet MRF6S9125NR1, MRF6S9125NBR1, MRF6S9125MR1, MRF6S9125MBR1 Datasheet (Freescale)

Specifications and Main Features

Frequently Asked Questions

User Manual