Freescale MRF 6 S 27085 HSR 3 Service Manual

Page 1

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for N -CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PC N - PC S / c e l l u l a r r a di o a nd W L L applications.

• Typical Single- Carrier N - CDMA Performance: V

900 mA, P Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

= 20 Watts Avg., Full Frequency Band, IS- 95 CDMA (Pilot,

out

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 23.5% ACPR @ 885 kHz Offset — - 48 dBc @ 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW Output Power

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V

Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40

µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 28 Volts, IDQ =

Document Number: MRF6S27085H

Rev. 1, 1/2005

MRF6S27085HR3

MRF6S27085HSR3

2700 MHz, 20 W AVG., 28 V

SINGLE N- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI- 780

MRF6S27085HR3

CASE 465A-06, STYLE 1

NI- 780S

MRF6S27085HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

CW Operation CW 85 W

DSS

stg

-0.5, +68 Vdc

-0.5, +12 Vdc

350

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 85 W CW Case Temperature 76°C, 20 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

(1,2)

0.50

0.56

W/°C

Unit

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data Freescale Semiconductor

Page 2

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22- A114) 3A (Minimum)

Machine Model (per EIA/JESD22 - A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 250 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 900 mAdc)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 2.2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, P f = 2630 MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF

Power Gain G

Drain Efficiency η

Adjacent Channel Power Ratio ACPR — -48 -45 dBc

Input Return Loss IRL — -13 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

GS(th)

GS(Q)

DS(on)

DSS

GSS

rss

— — 10 µAdc

— — 1 µAdc

1 2 3 Vdc

2 2.8 4 Vdc

— 0.21 0.3 Vdc

— 5.3 — S

— 2.8 — pF

= 20 W Avg. N-CDMA,

out

14 15.5 17 dB

22 23.5 — %

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

Page 3

BIAS

INPUT

+ +

SUPPLY

Z16

OUTPUT

C8C9C10C11

C4 C5

Z9 Z10 Z11 Z12 Z13 Z14 Z15

Z8Z7Z6Z5Z4Z3Z2Z1

DUT

Z1 0.672″ x 0.081″ Microstrip Z2 0.050″ x 0.250″ Microstrip Z3 0.288″ x 0.081″ Microstrip Z4 0.200″ x 0.480″ Microstrip Z5 0.270″ x 0.172″ Microstrip Z6 0.260″ x 0.810″ Microstrip Z7 0.366″ x 0.490″ Microstrip Z8 0.083″ x 0.490″ Microstrip Z9 0.091″ x 0.753″ Microstrip

Z10 0.287″ x 0.753″ Microstrip Z11 0.220″ x 0.384″ Microstrip Z12 0.122″ x 0.580″ Microstrip Z13 0.266″ x 0.148″ Microstrip Z14 0.130″ x 0.425″ Microstrip Z15 0.380″ x 0.081″ Microstrip Z16 0.703″ x 0.081″ Microstrip PCB Arlon GX- 0300 - 5022, 0.030″, εr = 2.5

Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic

Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1 Bead (0805) 2508051107Y0 Fair-Rite

B2 Bead, Surface Mount 2743019447 Fair-Rite

C1, C2 4.7 pF Chip Capacitors, B Case 100B4R7CP500X ATC

C3 3.6 pF Chip Capacitor, B Case 100B3R6CP500X ATC

C4 10 µF, 50 V Chip Capacitor (2220) GRM55DR61H106KA88B Murata

C5, C8 2.2 µF, 50 V Chip Capacitors (1825) C1825C225J5RAC Kemet

C6 47 µF, 50 V Electrolytic Capacitor MVK50VC47RM8X10TP Nippon

C7 330 µF, 63 V Electrolytic Capacitor NACZF331M63V Nippon

C9 0.01 µF Chip Capacitor (1825) C1825C103J1RAC Kemet

C10 22 µF, 25 V Tantalum Capacitor ECS - T1ED226R Panasonic TE Series

C11 47 µF, 16 V Tantalum Capacitor T491D476K016AS Kemet

L1 15 nH, Chip Inductor L0603150GGW AVX

3.3 W, 1/4 W Chip Resistor (1210)

ERJ - 14YJ3R3U Dale/Vishay

RF Device Data Freescale Semiconductor

MRF6S27085HR3 MRF6S27085HSR3

Page 4

C11 C10

* Components stacked

B1* L1*

C8* C9*

CUT OUT AREA

MRF6S27085 Rev. 3

Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

Page 5

TYPICAL CHARACTERISTICS

IRL

ALT1

, DRAIN

−42

−46

−50

−54

−58

EFFICIENCY (%)

−10

−12

−14

−16

−18

−20

−22

−24

ACPR (dBc), ALT1 (dBc)

−26

27002600

16.2

= 28 Vdc, P

IDQ = 900 mA, Single−Carrier N−CDMA

15.8

1.2288 MHz Channel Bandwidth

15.6

out

Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)

15.4

15.2

, POWER GAIN (dB)

14.8

14.6 2610 2630 2650 2670 2680

= 20 W (Avg.)

ACPR

266026402620

2690

f, FREQUENCY (MHz)

Figure 3. Single- Carrier N -CDMA Broadband Performance @ 20 Watts Avg.

15.2

14.8

14.6

14.4

IRL

14.2

, POWER GAIN (dB)

ACPR

13.8

ALT1

13.6 2610 2630 2650 2670 2680

= 28 Vdc, P

IDQ = 900 mA, Single−Carrier N−CDMA

= 45 W (Avg.)

out

1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)

266026402620

f, FREQUENCY (MHz)

2690

, DRAIN

EFFICIENCY (%)

−10

−32

−36

−40

−44

−48

−12

−14

−16

−18

−20

−22

−24

ACPR (dBc), ALT1 (dBc)

−26

27002600

Figure 4. Single - Carrier N -CDMA Broadband Performance @ 45 Watts Avg.

IRL, INPUT RETURN LOSS (dB)

IDQ = 1340 mA

1240 mA

900 mA

675 mA

, POWER GAIN (dB)

440 mA

, OUTPUT POWER (WATTS) PEP P

out

Figure 5. Two - Tone Power Gain versus

RF Device Data Freescale Semiconductor

VDD = 28 Vdc f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements

2.5 MHz Tone Spacing

100

Output Power

−20 VDD = 28 Vdc

f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements

−30

2.5 MHz Tone Spacing

IDQ = 440 mA

−40

−50

IMD, THIRD ORDER

−60

INTERMODULATION DISTORTION (dBc)

0.1 100

675 mA

110

, OUTPUT POWER (WATTS) PEP

out

Figure 6. Third Order Intermodulation Distortion

versus Output Power

MRF6S27085HR3 MRF6S27085HSR3

1340 mA

1240 mA

900 mA

Page 6

TYPICAL CHARACTERISTICS

VDD = 28 Vdc, P Two−Tone Measurements, Center Frequency = 2645 MHz

−10

= 85 W (PEP), IDQ = 900 mA

out

−20

3rd Order

−30

5th Order

−40

−50 7th Order

IMD, INTERMODULATION DISTORTION (dBc)

−60

0.1

1 100

TWO−TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

= 28 Vdc, IDQ = 900 mA, f = 2645 MHz

Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, Peak/Avg. = 9.8 dB

@ 0.01% Probability (CCDF)

, POWER GAIN (dB)

P1dB = 51 dBm (126.74 W)

, OUTPUT POWER (dBm)

out

32 3433 3635 3937

Figure 8. Pulse CW Output Power versus

ACPR

ALT1

P3dB = 51.72 dBm (148.54 W)

VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 2645 MHz

Pin, INPUT POWER (dBm)

Input Power

−30

−35

−40

−45

−50

Ideal

3830

Actual

17.5

12.5

, POWER GAIN (dB)

7.5

2.5

Figure 10. Power Gain and Drain Efficiency

, DRAIN EFFICIENCY (%), G

Figure 9. Single- Carrier N - CDMA ACPR, ALT1,

Power Gain and Drain Efficiency versus Output

VDD = 28 Vdc, IDQ = 900 mA f = 2645 MHz

, OUTPUT POWER (WATTS) CW

out

versus CW Output Power

10 100

, OUTPUT POWER (WATTS) AVG. W−CDMA

out

Power

100

, POWER GAIN (dB)

, DRAIN EFFICIENCY (%)

1 100

−55

ACPR (dBc), ALT1 (dBc)

−60

−65

−70

32 V

28 V

24 V

20 V

16 V

VDD = 12 V

IDQ = 900 mA f = 2645 MHz

, OUTPUT POWER (WATTS) CW

out

Figure 11. Power Gain versus Output Power

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

Page 7

TYPICAL CHARACTERISTICS

)

MTTF FACTOR (HOURS X AMPS

Figure 12. MTTF Factor versus Junction Temperature

110 130 150 170 190

100 120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I

for MTTF in a particular application.

210

100

0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

Through 13) 1.2288 MHz Channel Bandwidth

0.01

PROBABILITY (%)

0.001

0.0001

Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Figure 13. Single- Carrier CCDF N - CDMA

TYPICAL CHARACTERISTICS

N- CDMA TEST SIGNAL

2468

PEAK−TO−AVERAGE (dB)

−10

−20

−30

−40

−50

−60

(dB)

−70

−80

−90

−100

−110

−3.6

−2.9

−ACPR @ 30 kHz Integrated BW

−1.5

−2.2

1.2288 MHz

Channel BW

+ACPR @ 30 kHz

Integrated BW

0.7 2.2

0−0.7

f, FREQUENCY (MHz)

1.5

2.9

3.6

Figure 14. Single- Carrier N - CDMA Spectrum

RF Device Data Freescale Semiconductor

MRF6S27085HR3 MRF6S27085HSR3

Page 8

f = 2600 MHz

Zo = 10 Ω

load

f = 2700 MHz

source

f = 2700 MHz

f = 2600 MHz

VDD = 28 Vdc, IDQ = 900 mA, P

MHz

2600 5.86 - j4.348.55 - j5.42

2610 5.69 - j4.268.31 - j5.30

2620 5.64 - j4.158.21 - j5.10

2630 5.67 - j4.008.21 - j4.85

2640 5.72 - j3.838.26 - j4.57

2645 5.80 - j3.758.40 - j4.43

2650 5.86 - j3.708.44 - j4.32

2660 6.10 - j3.728.78 - j4.29

2670 6.19 - j4.008.94 - j4.59

2680 6.07 - j4.368.88 - j5.01

2690 5.80 - j4.488.57 - j5.18

2700 5.71 - j4.478.36 - j5.10

= Test circuit impedance as measured from

source

load

gate to ground.

= Test circuit impedance as measured

from drain to ground.

Input Matching Network

source

Ω

Device Under Test

= 20 W Avg.

out

load

Ω

Output Matching Network

Figure 15. Series Equivalent Source and Load Impedance

MRF6S27085HR3 MRF6S27085HSR3

source

load

RF Device Data

Freescale Semiconductor

Page 9

NOTES

RF Device Data Freescale Semiconductor

MRF6S27085HR3 MRF6S27085HSR3

Page 10

NOTES

MRF6S27085HR3 MRF6S27085HSR3

RF Device Data

Freescale Semiconductor

Page 11

PACKAGE DIMENSIONS

(FLANGE)

bbb B

(FLANGE)

Q2X

bbb B

(INSULATOR)

bbb B

(LID)

ccc B

SEATING

PLANE

ccc B

aaa B

CASE 465- 06

ISSUE F

NI- 780

MRF6S27085HR3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91

(LID)

(INSULATOR)

C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.66 19.96 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 S 0.365 0.375 9.27 9.52

aaa 0.005 REF 0.127 REF

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

(FLANGE)

bbb B

(FLANGE)

(LID)

ccc B

(INSULATOR)

bbb B

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83

(LID)

ccc B

aaa B

(INSULATOR)

CASE 465A- 06

E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 N 0.772 0.788 19.61 20.02 R 0.365 0.375 9.27 9.53 S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1.02 Z −−− 0.030 −−− 0.76

aaa 0.005 REF 0.127 REF

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

5. SOURCE

MILLIMETERSINCHES

ISSUE F NI- 780S

MRF6S27085HSR3

RF Device Data Freescale Semiconductor

MRF6S27085HR3 MRF6S27085HSR3

Page 12

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Home Page:

www.freescale.com

E- mail:

support@freescale.com

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Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part.

Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved.

MRF6S27085HR3 MRF6S27085HSR3

Document Number: MRF6S27085H Rev. 1, 1/2005

RF Device Data

Freescale Semiconductor

Freescale MRF 6 S 27085 HSR 3 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual