Freescale MRF 6 S 27085 HSR 3 Service Manual
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for N -CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PC N - PC S / c e l l u l a r r a di o a nd W L L
applications.
• Typical Single- Carrier N - CDMA Performance: V
900 mA, P
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
= 20 Watts Avg., Full Frequency Band, IS- 95 CDMA (Pilot,
out
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 85 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 V
Operation
DD
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40
µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
= 28 Volts, IDQ =
DD
Document Number: MRF6S27085H
Rev. 1, 1/2005
MRF6S27085HR3
MRF6S27085HSR3
2700 MHz, 20 W AVG., 28 V
SINGLE N- CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI- 780
MRF6S27085HR3
CASE 465A-06, STYLE 1
NI- 780S
MRF6S27085HSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate- Source Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
CW Operation CW 85 W
DSS
GS
P
stg
D
J
-0.5, +68 Vdc
-0.5, +12 Vdc
350
2
- 65 to +150 °C
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
R
θ
JC
(1,2)
0.50
0.56
W
W/°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 3A (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
Drain-Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, P
f = 2630 MHz and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Power Gain G
Drain Efficiency η
Adjacent Channel Power Ratio ACPR — -48 -45 dBc
Input Return Loss IRL — -13 -9 dB
1. Part is internally matched both on input and output.
(1)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
DSS
DSS
GSS
g
fs
rss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
1 2 3 Vdc
2 2.8 4 Vdc
— 0.21 0.3 Vdc
— 5.3 — S
— 2.8 — pF
= 20 W Avg. N-CDMA,
out
14 15.5 17 dB
22 23.5 — %
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
RF
INPUT
B1
+ +
C1
L1
V
C2
SUPPLY
Z16
RF
OUTPUT
+
B2
C8C9C10C11
R1
C3
C4 C5
Z9 Z10 Z11 Z12 Z13 Z14 Z15
Z8Z7Z6Z5Z4Z3Z2Z1
DUT
C6
+
C7
Z1 0.672″ x 0.081″ Microstrip
Z2 0.050″ x 0.250″ Microstrip
Z3 0.288″ x 0.081″ Microstrip
Z4 0.200″ x 0.480″ Microstrip
Z5 0.270″ x 0.172″ Microstrip
Z6 0.260″ x 0.810″ Microstrip
Z7 0.366″ x 0.490″ Microstrip
Z8 0.083″ x 0.490″ Microstrip
Z9 0.091″ x 0.753″ Microstrip
Z10 0.287″ x 0.753″ Microstrip
Z11 0.220″ x 0.384″ Microstrip
Z12 0.122″ x 0.580″ Microstrip
Z13 0.266″ x 0.148″ Microstrip
Z14 0.130″ x 0.425″ Microstrip
Z15 0.380″ x 0.081″ Microstrip
Z16 0.703″ x 0.081″ Microstrip
PCB Arlon GX- 0300 - 5022, 0.030″, εr = 2.5
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Bead (0805) 2508051107Y0 Fair-Rite
B2 Bead, Surface Mount 2743019447 Fair-Rite
C1, C2 4.7 pF Chip Capacitors, B Case 100B4R7CP500X ATC
C3 3.6 pF Chip Capacitor, B Case 100B3R6CP500X ATC
C4 10 µF, 50 V Chip Capacitor (2220) GRM55DR61H106KA88B Murata
C5, C8 2.2 µF, 50 V Chip Capacitors (1825) C1825C225J5RAC Kemet
C6 47 µF, 50 V Electrolytic Capacitor MVK50VC47RM8X10TP Nippon
C7 330 µF, 63 V Electrolytic Capacitor NACZF331M63V Nippon
C9 0.01 µF Chip Capacitor (1825) C1825C103J1RAC Kemet
C10 22 µF, 25 V Tantalum Capacitor ECS - T1ED226R Panasonic TE Series
C11 47 µF, 16 V Tantalum Capacitor T491D476K016AS Kemet
L1 15 nH, Chip Inductor L0603150GGW AVX
R1
3.3 W, 1/4 W Chip Resistor (1210)
ERJ - 14YJ3R3U Dale/Vishay
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
3
C11 C10
C4
C5
C7
B2
C1
* Components stacked
R1
B1* L1*
C8* C9*
C3
CUT OUT AREA
MRF6S27085
Rev. 3
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
C6
C2
MRF6S27085HR3 MRF6S27085HSR3
4
RF Device Data
Freescale Semiconductor
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