Freescale MRF6S27050HR3, MRF6S270850HSR3 Technical Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2500 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.

• Typical Single-Carrier W -CDMA Performance: VDD = 28 Volts, IDQ =

500 mA, P

3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 22.5%
ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2600 MHz, 50 Watts CW
Output Power

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 7 Watts Avg., f = 2615 MHz, Channel Bandwidth =

out

Operation

DD

Document Number: MRF6S27050H

Rev. 1, 12/2008

MRF6S27050HR3

MRF6S27050HSR3

2500 - 2700 MHz, 7 W AVG., 28 V

SINGLE W- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI-780

MRF6S27050HR3

CASE 465A-06, STYLE 1

NI-780S

MRF6S27050HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Storage Temperature Range T

Case Operating Temperature T

Operating Junction Temperature

(1,2)

DSS

GS

stg

C

T

J

-0.5, +68 Vdc

-0.5, +12 Vdc

- 65 to +150 °C

150 °C

225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 43 W CW
Case Temperature 72°C, 7 W CW

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

R

θ

JC

(2,3)

0.85

0.98

Unit

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF6S27050HR3 MRF6S27050HSR3

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1A (Minimum)

Machine Model (per EIA/JESD22 - A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 250 µAdc)

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 2.2 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, P
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

Adjacent Channel Power Ratio ACPR -40 -42.5 — dBc

Input Return Loss IRL — -10 — dB

1. Part internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

C

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

C

DSS

DSS

GSS

rss

oss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

1 2 3 Vdc

2 2.8 4 Vdc

— 0.21 0.3 Vdc

— 0.83 — pF

— 232 — pF

= 7 W Avg. W-CDMA, f = 2615 MHz,

out

15 16 18 dB

20.5 22.5 — %

MRF6S27050HR3 MRF6S27050HSR3

2

RF Device Data

Freescale Semiconductor

V

RF

INPUT

B2

BIAS

Z1 Z2 Z3C1Z4 Z5 Z6 Z7

+

C7+C6

C5

C4

R1

B1

C3

V

SUPPLY

+

C2

Z17

+

C15

RF

OUTPUT

+

C9 C14

C8

Z9

Z8

Z10 Z11 Z12 Z14

DUT

C10+C11 C12 C13

Z13 Z16

Z15

Z1 0.748″ x 0.081″ Microstrip
Z2 0.273″ x 0.081″ Microstrip
Z3 0.055″ x 0.220″ Microstrip
Z4 0.090″ x 0.440″ Microstrip
Z5 0.195″ x 0.170″ Microstrip
Z6 0.797″ x 0.490″ Microstrip
Z7 0.082″ x 0.490″ Microstrip
Z8 0.050″ x 0.476″ Microstrip
Z9 0.070″ x 0.350″ Microstrip

Z10 0.091″ x 0.753″ Microstrip
Z11 0.150″ x 0.753″ Microstrip
Z12 0.153″ x 0.543″ Microstrip
Z13 0.145″ x 0.384″ Microstrip
Z14 0.446″ x 0.148″ Microstrip
Z15 0.130″ x 0.425″ Microstrip
Z16 0.384″ x 0.081″ Microstrip
Z17 0.730″ x 0.081″ Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55

Figure 1. MRF6S27050HR3(SR3) Test Circuit Schematic

Table 5. MRF6S27050HR3(SR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1 Ferrite Bead 2508051107Y0 Fair-Rite

B2 Ferrite Bead, Short 2743019447 Fair-Rite

C1, C2 4.3 pF Chip Capacitors ATC100B4R3BT500XT ATC

C3, C8 3.6 pF Chip Capacitors ATC100B3R6BT500XT ATC

C4, C11 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet

C5 0.01 µF, 100 V Chip Capacitor C1825C103J1RAC Kemet

C6 22 µF, 25 V Tantulum Capacitor T491D226K025AT Kemet

C7 47 µF, 16 V Tantalum Capacitor T491D476K016AT Kemet

C9, C10 10 µF, 50 V Tantalum Capacitors T491D106K050AT Kemet

C12, C13 1.0 µF, 50 V Chip Capacitors GRM32RR71H105KA01B Murata

C14 330 µF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S Nippon Chemi-Con

C15 47 µF, 50 V Electrolytic Capacitor EMVK500ADA470MHA0G United Chemi-Con

R1 2.7 Ω, 1/4 W Chip Resistor CRCW12062R7FKEA Vishay

RF Device Data
Freescale Semiconductor

MRF6S27050HR3 MRF6S27050HSR3

3

C11

B2

C7 C6

C1

B1

R1

C4 Top
C5 Bottom

C3

C8

C10C9

CUT OUT AREA

Figure 2. MRF6S27050HR3(SR3) Test Circuit Component Layout

C14

C13

C12

C2

MRF6S27050
Rev. 1A

C15

MRF6S27050HR3 MRF6S27050HSR3

4

RF Device Data

Freescale Semiconductor