Freescale MRF6S23140HR3, MRF6S23140HSR3 Technical Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.

• Typical 2-Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,

P

= 28 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,

out

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.2 dB
Drain Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Operation

DD

Document Number: MRF6S23140H

Rev. 2, 12/2008

MRF6S23140HR3

MRF6S23140HSR3

2300 - 2400 MHz, 28 W AVG., 28 V

2 x W- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465B- 03, STYLE 1

NI-880

MRF6S23140HR3

CASE 465C-02, STYLE 1

NI-880S

MRF6S23140HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Storage Temperature Range T

Case Operating Temperature T

Operating Junction Temperature

(1,2)

DSS

GS

stg

C

T

J

-0.5, +68 Vdc

-0.5, +12 Vdc

- 65 to +150 °C

150 °C

225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW

R

θ

JC

(2,3)

0.29

0.33

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

Unit

°C/W

 Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF6S23140HR3 MRF6S23140HSR3

1

Table 4. Electrical Characteristics

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

I

DSS

— — 10 µAdc

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

I

DSS

— — 1 µAdc

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

I

GSS

— — 500 nΑdc

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

V

GS(th)

1 2 3 Vdc

(VDS = 10 Vdc, ID = 300 µAdc)

Gate Quiescent Voltage

V

GS(Q)

2 2.8 4 Vdc

(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)

Drain-Source On - Voltage

V

DS(on)

0.1 0.21 0.3 Vdc

(VGS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(1)

C

rss

— 2 — pF

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, P

= 28 W Avg., f = 2390 MHz, 2- Carrier

out

W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in

3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

ps

D

13 15.2 17 dB

23 25 — %

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -40 -38 dBc

Input Return Loss IRL — -15 — dB

1. Part internally matched both on input and output.

MRF6S23140HR3 MRF6S23140HSR3

2

RF Device Data

Freescale Semiconductor

V

BIAS

INPUT

RF

V

SUPPLY

+

Z12

Z11

Z10 Z15 Z16 Z17 Z18

Z13

C9

B1

C3

Z9

Z7

DUT

Z8

R1

+

C11+C10C12

Z1

Z2 Z3 Z4 Z5 Z6

C1

C17 C18C5

C6

C19

C20

RF

OUTPUT

C2

C4

B2

+

C15+C14C16

Z1 0.678″ x 0.068″ Microstrip
Z2 0.420″ x 0.068″ Microstrip
Z3 0.845″ x 0.200″ Microstrip
Z4 0.175″ x 0.530″ Microstrip
Z5, Z6 0.025″ x 0.530″ Microstrip
Z7 0.514″ x 0.050″ Microstrip
Z8 0.507″ x 0.050″ Microstrip
Z9 0.097″ x 1.170″ Microstrip

C13

Z10 0.193″ x 1.170″ Microstrip
Z11, Z13 0.712″ x 0.095″ Microstrip
Z12, Z14 0.098″ x 0.095″ Microstrip
Z15 0.115″ x 0.550″ Microstrip
Z16 0.250″ x 0.110″ Microstrip
Z17 0.539″ x 0.068″ Microstrip
Z18 0.956″ x 0.068″ Microstrip
PCB Taconic RF- 35, 0.030″, εr = 3.5

Z14

C8

+

C21 C22C7

C23

C24

Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic

Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Ferrite Beads, Short 2743019447 Fair-Rite

C1, C2, C3, C4, C5, C6, C7, C8 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC

C9, C13 0.01 µF, 100 V Chip Capacitors C1825C103J1RAC Kemet

C10, C14, C17, C21 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet

C11, C15 22 µF, 25 V Tantalum Chip Capacitors T491D226K025AT Kemet

C12, C16 47 µF, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet

C18, C19, C22, C23 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C20, C24 330 µF, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Chemi-Con

R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay

RF Device Data
Freescale Semiconductor

MRF6S23140HR3 MRF6S23140HSR3

3

C19C6

* Stacked

R1

C1

C15

C16

C12 C11

C10*

C14*

C13*

C9*

C4

B1

C3

CUT OUT AREA

B2

C5

C17 C18

C21 C22

C7

C8

Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout

C20

C2

MRF6S23140H
Rev 3

C24

C23

MRF6S23140HR3 MRF6S23140HSR3

4

RF Device Data

Freescale Semiconductor