Freescale MRF 6 S 19140 HSR 3 Service Manual

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN- PCS/cellular radio and WLL
applications.

• Typical 2-carrier N - CDMA Performance: V

P

= 29 Watts Avg., Full Frequency Band. IS- 95 (Pilot, Sync, Paging,

out

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8
dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Output Power

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

DD

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40

• Pb- Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 28 Volts, IDQ = 1150 mA,

DD

Operation

µ″ Nominal.

Document Number: MRF6S19140H

Rev. 2, 7/2005

MRF6S19140HR3

MRF6S19140HSR3

1990 MHz, 29 W AVG., 28 V

2 x N- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465B- 03, STYLE 1

NI- 880

MRF6S19140HR3

CASE 465C-02, STYLE 1

NI- 880S

MRF6S19140HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

CW Operation CW 140 W

DSS

GS

P

stg

D

J

-0.5, +68 Vdc

-0.5, +12 Vdc

530

3

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

R

θ

JC

(1,2)

0.33

0.38

W

W/°C

Unit

°C/W

 Freescale Semiconductor, Inc., 2005. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1150 mAdc)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 3.3 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, P
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -51 -48 dBc

Input Return Loss IRL — -15 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

C

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

DSS

DSS

GSS

g

fs

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

1 2 3 Vdc

2 2.8 4 Vdc

— 0.21 0.3 Vdc

— 7.2 — S

— 2 — pF

= 29 W Avg., f1 = 1930 MHz,

out

15 16 18 dB

26 27.5 — %

MRF6S19140HR3 MRF6S19140HSR3

2

RF Device Data

Freescale Semiconductor

V

V

BIAS

BIAS

RF

INPUT

+

C13

+

C14

R1

R2

V

SUPPLY

+

C5 C9 C11

C1

B1

R5

Z2 Z3

B2

R6

C7

C8

C3

C4

Z5 Z6 Z7

Z4

DUT

C6 C10 C12

R3

Z1

R4

C15

Z8 Z9

V

SUPPLY

C2

Z10

RF

OUTPUT

Z1 0.864″ x 0.082″ Microstrip
Z2 1.373″ x 0.082″ Microstrip
Z3 0.282″ x 0.900″ Microstrip
Z4 0.103″ x 0.900″ Microstrip
Z5 0.094″ x 1.055″ Microstrip
Z6 0.399″ x 1.055″ Microstrip

Z7 0.115″ x 0.569″ Microstrip
Z8 0.191″ x 0.289″ Microstrip
Z9 0.681″ x 0.081″ Microstrip
Z10 1.140″ x 0.081″ Microstrip
PCB Arlon GX0300-55 - 22, 0.030″, εr = 2.5

Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic

Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Beads, Surface Mount 2743019447 Fair-Rite

C1, C2 39 pF Chip Capacitors 100B390JP500X AT C

C3, C4, C5, C6 9.1 pF Chip Capacitors 100B9R1CP500X AT C

C7, C8, C9, C10, C11, C12 10 µF, 50 V Chip Capacitors (2220) GRM55DR61H106KA88B Murata

C13, C14 47 µF, 50 V Electrolytic Capacitors MVK50VC47RM8X10TP Nippon

C15 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi-Co

R1, R2 560 kΩ, 1/8 W Chip Resistors (1206) Dale/Vishay

R3, R4 1.0 kΩ, 1/8 W Chip Resistors (1206) Dale/Vishay

R5, R6 12 Ω, 1/8 W Chip Resistors (1206) Dale/Vishay

RF Device Data
Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

3

C13

R3

6S19140

C5 C9 C11

C3R5B1

R1

C1

R2

R4 B2 R6 C4

C14

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.

C7

C8

 Motorola, Inc.
2002 DS1464

C15

C2

CUT OUT AREA

C6 C10 C12

Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout

MRF6S19140HR3 MRF6S19140HSR3

4

RF Device Data

Freescale Semiconductor