Freescale MRF 6 S 19140 HSR 3 Service Manual

Page 1

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement - Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

• Typical 2-carrier N - CDMA Performance: V

= 29 Watts Avg., Full Frequency Band. IS- 95 (Pilot, Sync, Paging,

out

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc @ 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW

Output Power

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• Low Gold Plating Thickness on Leads, 40

• Pb- Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 28 Volts, IDQ = 1150 mA,

Operation

µ″ Nominal.

Document Number: MRF6S19140H

Rev. 2, 7/2005

MRF6S19140HR3

MRF6S19140HSR3

1990 MHz, 29 W AVG., 28 V

2 x N- CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465B- 03, STYLE 1

NI- 880

MRF6S19140HR3

CASE 465C-02, STYLE 1

NI- 880S

MRF6S19140HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate- Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

CW Operation CW 140 W

DSS

stg

-0.5, +68 Vdc

-0.5, +12 Vdc

530

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW Case Temperature 77°C, 29 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

(1,2)

0.33

0.38

W/°C

Unit

°C/W

RF Device Data Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Page 2

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1150 mAdc)

Drain-Source On - Voltage

(VGS = 10 Vdc, ID = 3.3 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, P f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -51 -48 dBc

Input Return Loss IRL — -15 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

GS(th)

GS(Q)

DS(on)

DSS

GSS

rss

— — 10 µAdc

— — 1 µAdc

1 2 3 Vdc

2 2.8 4 Vdc

— 0.21 0.3 Vdc

— 7.2 — S

— 2 — pF

= 29 W Avg., f1 = 1930 MHz,

out

15 16 18 dB

26 27.5 — %

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

Page 3

BIAS

INPUT

C13

C14

SUPPLY

C5 C9 C11

Z2 Z3

Z5 Z6 Z7

DUT

C6 C10 C12

C15

Z8 Z9

SUPPLY

Z10

OUTPUT

Z1 0.864″ x 0.082″ Microstrip Z2 1.373″ x 0.082″ Microstrip Z3 0.282″ x 0.900″ Microstrip Z4 0.103″ x 0.900″ Microstrip Z5 0.094″ x 1.055″ Microstrip Z6 0.399″ x 1.055″ Microstrip

Z7 0.115″ x 0.569″ Microstrip Z8 0.191″ x 0.289″ Microstrip Z9 0.681″ x 0.081″ Microstrip Z10 1.140″ x 0.081″ Microstrip PCB Arlon GX0300-55 - 22, 0.030″, εr = 2.5

Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic

Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1, B2 Beads, Surface Mount 2743019447 Fair-Rite

C1, C2 39 pF Chip Capacitors 100B390JP500X AT C

C3, C4, C5, C6 9.1 pF Chip Capacitors 100B9R1CP500X AT C

C7, C8, C9, C10, C11, C12 10 µF, 50 V Chip Capacitors (2220) GRM55DR61H106KA88B Murata

C13, C14 47 µF, 50 V Electrolytic Capacitors MVK50VC47RM8X10TP Nippon

C15 470 µF, 63 V Electrolytic Capacitor SME63V471M12X25LL United Chemi-Co

R1, R2 560 kΩ, 1/8 W Chip Resistors (1206) Dale/Vishay

R3, R4 1.0 kΩ, 1/8 W Chip Resistors (1206) Dale/Vishay

R5, R6 12 Ω, 1/8 W Chip Resistors (1206) Dale/Vishay

RF Device Data Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Page 4

C13

6S19140

C5 C9 C11

C3R5B1

R4 B2 R6 C4

C14

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.

 Motorola, Inc. 2002 DS1464

C15

CUT OUT AREA

C6 C10 C12

Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

Page 5

TYPICAL CHARACTERISTICS

= 28 Vdc, P

IM3

, POWER GAIN (dB)G

ACPR

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

IRL

= 29 W (Avg.), IDQ = 1150 mA

out

1920 1940 1960 1980 1990

197019501930

f, FREQUENCY (MHz)

Figure 3. 2- Carrier N -CDMA Broadband Performance @ P

= 28 Vdc, P

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB

= 75 W (Avg.), IDQ = 1150 mA

out

@ 0.01% Probability (CCDF)

IRL

, POWER GAIN (dB)

IM3

ACPR

f, FREQUENCY (MHz)

Figure 4. 2- Carrier N -CDMA Broadband Performance @ P

, DRAIN

−10

−20

−40

−60

−80 IM3 (dBc), ACPR (dBc)

−100

20001910

= 29 Watts Avg.

out

, DRAIN

EFFICIENCY (%)

−20

−40

−60

IM3 (dBc), ACPR (dBc)

−80

20001910 1970195019301920 1940 1960 1980 1990

= 75 Watts Avg.

out

EFFICIENCY (%)

−10

−12

−14

−16

−18

−20

−22

−24

−26

−28 IRL, INPUT RETURN LOSS (dB)

−30

−10

−12

−14

−16

−18

−20

−22

−24

−26

−28 IRL, INPUT RETURN LOSS (dB)

−30

IDQ = 1700 mA

1500 mA

1150 mA

900 mA

600 mA

, POWER GAIN (dB)

VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing

, OUTPUT POWER (WATTS) PEP P

out

Figure 5. Two - Tone Power Gain versus

RF Device Data Freescale Semiconductor

10 400

100

Output Power

−10 VDD = 28 Vdc

f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing

−20

−30

600 mA

−40

IMD, THIRD ORDER

−50

INTERMODULATION DISTORTION (dBc)

−60

1 100

Figure 6. Third Order Intermodulation Distortion

900 mA

IDQ = 1700 mA

1150 mA

1500 mA

, OUTPUT POWER (WATTS) PEP

out

versus Output Power

MRF6S19140HR3 MRF6S19140HSR3

1000

Page 6

TYPICAL CHARACTERISTICS

(

)

VDD = 28 Vdc, P Two−Tone Measurements, Center Frequency = 1960 MHz

−10

= 160 W (PEP), IDQ = 1150 mA

out

−20

3rd Order

−30

5th Order

−40

7th Order

−50

IMD, INTERMODULATION DISTORTION (dBc)

−60

0.1

1 100

TWO−TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

= 28 Vdc, IDQ = 1150 mA

f1 = 1958.75 MHz, f2 = 1961.25 MHz

2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB

, POWER GAIN (dB)

@ 0.01% Probability (CCDF) TC = 25°C

57 56

P3dB = 53.1 dBm (204 W)

P1dB = 52.3 dBm (171 W) 53 52

, OUTPUT POWER (dBm)

out

48 47 46

3029

Figure 8. Pulse CW Output Power versus

IM3

ACPR

VDD = 28 Vdc, IDQ = 1150 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 1960 MHz

32 3433 3635 3937

Pin, INPUT POWER (dBm)

Input Power

−20

−30

−40

−50

Ideal

Actual

38 40 4128

, DRAIN EFFICIENCY (%), G

1 10 100

, OUTPUT POWER (WATTS) AVG.

out

IM3 (dBc), ACPR (dBc)

−60

−70

Figure 9. 2 - Carrier N- CDMA ACPR, IM3, Power Gain

and Drain Efficiency versus Output Power

AIN

WER

, P

VDD = 28 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C

, OUTPUT POWER (WATTS) CW

out

100

Figure 10. Power Gain and Drain Efficiency

300

, POWER GAIN (dB)

, DRAIN EFFICIENCY (%)

0 20050

Figure 11. Power Gain versus Output Power

20 V

16 V

12 V

100 150

, OUTPUT POWER (WATTS) CW

out

VDD = 32 V

28 V

24 V

IDQ = 1150 mA f = 1960 MHz

250

versus CW Output Power

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

Page 7

TYPICAL CHARACTERISTICS

)

MTTF FACTOR (HOURS X AMPS

Figure 12. MTTF Factor versus Junction Temperature

110 130 150 170 190

100 120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I

for MTTF in a particular application.

210

100

0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8

PROBABILITY (%)

Carriers. ACPR Measured in 30 kHz Bandwidth @

Through 13) 1.2288 MHz Channel Bandwidth

0.01

±885 kHz Offset. IM3 Measured in 1.2288 MHz

0.001

Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

0.0001 0

N- CDMA TEST SIGNAL

2468

PEAK−TO−AVERAGE (dB)

Figure 13. 2- Carrier CCDF N - CDMA

−10

1.2288 MHz Channel BW

−20

−30

−IM3 @

1.2288 MHz

Integrated BW

+IM3 @

1.2288 MHz

Integrated BW

−40

−50

(dB)

−60

−70

−ACPR @ 30 kHz Integrated BW

+ACPR @ 30 kHz

Integrated BW

−80

−90

−100

61.5 4.530−1.5−3−4.5−6−7.5 7.5

f, FREQUENCY (MHz)

Figure 14. 2- Carrier N -CDMA Spectrum

RF Device Data Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Page 8

f = 2020 MHz

load

f = 1900 MHz

f = 2020 MHz

VDD = 28 Vdc, IDQ = 1150 mA, P

MHz

1900

1930

source

Ω

2.27 - j3.95

2.00 - j4.24

Zo = 5 Ω

source

= 29 W Avg.

out

1.13 - j0.67

1.11 - j0.60

f = 1900 MHz

load

Ω

Figure 15. Series Equivalent Source and Load Impedance

MRF6S19140HR3 MRF6S19140HSR3

1960

1.72 - j3.96

1990

2020 1.01 - j0.17

= Test circuit impedance as measured from

source

= Test circuit impedance as measured

load

Input Matching Network

1.69 - j3.17

gate to ground.

from drain to ground.

Device Under Test

source

1.07 - j0.46

1.06 - j0.301.80 - j3.51

load

Output Matching Network

RF Device Data

Freescale Semiconductor

Page 9

NOTES

RF Device Data Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Page 10

NOTES

MRF6S19140HR3 MRF6S19140HSR3

RF Device Data

Freescale Semiconductor

Page 11

PACKAGE DIMENSIONS

(FLANGE)

bbb B

ccc B

(FLANGE)

Q2X

bbb B

(INSULATOR)

(LID)

ccc B

aaa B

(LID)

(INSULATOR)

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.

4. RECOMMENDED BOLT CENTER DIMENSION OF

1.16 (29.57) BASED ON M3 SCREW.

DIM MIN MAX MIN MAX

A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.6 13.8 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.175 0.205 4.44 5.21 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 Q .118 .138 3.00 3.51 R 0.515 0.525 13.10 13.30

S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465B- 03

ISSUE D

NI- 880

MRF6S19140HR3

(FLANGE)

bbb B

ccc B

(FLANGE)

NOTES:

(INSULATOR)

(LID)

ccc B

aaa B

(LID)

(INSULATOR)

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 0.905 0.915 22.99 23.24 B 0.535 0.545 13.60 13.80 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30

S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465C- 02

ISSUE D NI- 880S

MRF6S19140HSR3

RF Device Data Freescale Semiconductor

MRF6S19140HR3 MRF6S19140HSR3

Page 12

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Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.

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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved.

MRF6S19140HR3 MRF6S19140HSR3

Document Number: MRF6S19140H Rev. 2, 7/2005

RF Device Data

Freescale Semiconductor

Freescale MRF 6 S 19140 HSR 3 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual