Freescale MRF5S9101MR1, MRF5S9101MBR1 Technical Data

C

O

O

Freescale Semiconductor

Technical Data

Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.

RF Power Field Effect Transistors

N- Channel Enhancement -Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.

GSM Application

• Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, P

100 Watts CW, Full Frequency Band (869 - 894 MHz and 921-960 MHz)

Power Gain - 17.5 dB
Drain Efficiency - 60%

GSM EDGE Application

N

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, P

50 Watts Avg., Full Frequency Band (869- 894 MHz and 921-960 MHz)

Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.3% rms

• Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,

@ f = 960 MHz

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

RMATI

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• 200°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Operation

DD

out

=

out

=

Document Number: MRF5S9101

Rev. 3, 5/2006

MRF5S9101MR1

MRF5S9101MBR1

869- 960 MHz, 100 W, 26 V

GSM/GSM EDGE

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB - 4

PLASTIC

MRF5S9101MR1

CASE 1484-04, STYLE 1

TO-272 WB - 4

PLASTIC

MRF5S9101MBR1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

HIVE INF

Gate-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

AR

Operating Junction Temperature T

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

R

DSS

GS

P

stg

θ

D

J

JC

- 0.5, +68 Vdc

- 0.5, +15 Vdc

427

2.44

- 65 to +150 °C

200 °C

(1,2)

0.41

0.47

W

W/°C

ARCHIVE INFORMATION

Unit

°C/W

 Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF5S9101MR1 MRF5S9101MBR1

1

C

O

O

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1C (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J - STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

N

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc)

Drain-Source On- Voltage

RMATI

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

Dynamic Characteristics

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, P

Power Gain G

Drain Efficiency η

HIVE INF

Input Return Loss IRL — -15 -9 dB

P

@ 1 dB Compression Point, CW P1dB 100 110 — W

out

1. Part is internally input matched.

(1)

= 25°C unless otherwise noted)

C

AR

I

DSS

I

DSS

I

GSS

V

GS(th)

V

GS(Q)

V

DS(on)

g

fs

C

oss

C

rss

= 100 W, IDQ = 700 mA, f = 960 MHz

out

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2 2.8 3.5 Vdc

— 3.7 — Vdc

— 0.21 0.3 Vdc

— 7 — S

— 70 — pF

— 2.2 — pF

16 17.5 19 dB

56 60 — %

(continued)

ARCHIVE INFORMATION

MRF5S9101MR1 MRF5S9101MBR1

2

RF Device Data

Freescale Semiconductor

C

O

O

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V

I

= 650 mA, 869 MHz<Frequency<894 MHz, 920 MHz<Frequency<960 MHz

DQ

Power Gain

Drain Efficiency η

Error Vector Magnitude EVM — 2.3 — % rms

Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc

Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc

= 25°C unless otherwise noted) (continued)

C

G

ps

D

= 28 Vdc, P

DD

— 18 — dB

— 42 — %

= 50 W Avg.,

out

N

RMATI

HIVE INF

AR

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRF5S9101MR1 MRF5S9101MBR1

3

C

O

O

V

BIAS

R1

C1

C7

C4R2

Z13

R3

Z11

C8 C2C5

V

SUPPLY

+

C21

N

RMATI

RF

INPUT

Z10

Z9 Z7

C19

Z1 0.698″ x 0.827″ Microstrip
Z2 0.720″ x 0.788″ Microstrip
Z3 0.195″ x 0.087″ Microstrip
Z4 0.524″ x 0.087″ Microstrip
Z5 0.233″ x 0.087″ Microstrip
Z6 0.560″ x 0.087″ Microstrip
Z7 0.095″ x 0.827″ Microstrip
Z8 0.472″ x 0.087″ Microstrip
Z9 0.384″ x 0.087″ Microstrip

C10

Figure 1. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Schematic

Z8

C17

C13C16

DUT

Z1

Z12

Z10 1.491″ x 0.087″ Microstrip
Z11, Z12* 1.6″ x 0.089″ Microstrip

Z13* 1.2″ x 0.059″ Microstrip

PCB Taconic TLX8-0300, 0.030″, εr = 2.55

*Variable for tuning

Z2

C12

C9 C3C6

(quarter wave length for supply purpose)

(quarter wave length for bias purpose)

C14

Z3

C15

Z4

Z5

C18 C20

RF

OUTPUT

Z6

C11

Table 6. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2, C3

C4, C5, C6 10 nF 200B Chip Capacitors 200B103MW ATC

C7, C8, C9 33 pF 100B Chip Capacitors 100B330JW ATC

HIVE INF

C10, C11 22 pF 100B Chip Capacitors 100B220GW AT C

C12, C13 10 pF 100B Chip Capacitors 100B100GW AT C

C14, C15, C16, C17 8.2 pF 100B Chip Capacitors 100B8R2CW ATC

C18 5.6 pF 100B Chip Capacitor 100B5R6CW ATC

AR

C19 4.7 pF 100B Chip Capacitor 100B4R7BW ATC

C20 3.9 pF 100B Chip Capacitor 100B3R9BW ATC

C21

R1, R2

R3

4.7 mF Chip Capacitors (2220)

220 mF, 50 V Electrolytic Capacitor, Axial

10 kW, 1/4 W Chip Resistors (1206)

10 W, 1/4 W Chip Resistor (1206)

GRM55ER7H475KA01 Murata

516D227M050NP7B Sprague

ARCHIVE INFORMATION

MRF5S9101MR1 MRF5S9101MBR1

4

RF Device Data

Freescale Semiconductor

C

O

O

C1

C21

V

V

GG

C4

R1

R2

C7

R3

C16

C13

C8

C5

C14

DD

C2

N

RMATI

C10

C19

C17

MRF5S9101N
900 MHz
Rev 2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 2. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Layout

CUT OUT AREA

C12

C15

C9

C18

C20

C6

C11

C3

HIVE INF

AR

RF Device Data
Freescale Semiconductor

ARCHIVE INFORMATION

MRF5S9101MR1 MRF5S9101MBR1

5

C

O

O

TYPICAL CHARACTERISTICS - 900 MHz

N

RMATI

HIVE INF

19

18

AR

18

G

ps

η

D

16

14

, POWER GAIN (dB)

13

ps

G

12

IRL

11

10

860

880 900 920 940 960 980 1000

Figure 3. Power Gain, Input Return Loss and Drain

Efficiency versus Frequency @ P

19

18

G

ps

17

16

η

D

15

14 −8

, POWER GAIN (dB)

13

ps

G

IRL

12

11 − 20

10

860

880 900 920 940 960 980 1000

Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P

IDQ = 1500 mA

VDD = 26 Vdc
IDQ = 700 mA

f, FREQUENCY (MHz)

VDD = 26 Vdc
IDQ = 700 mA

f, FREQUENCY (MHz)

= 100 Watts CW

out

= 40 Watts CW

out

19

18

70

6017

50

4015

30

0

−15

−30

−45

1020

50

45

40

35

30

−12

−16

−24

1020

VDD = 12 V

INPUT RETURN LOSS (dB)IRL,

, DRAIN EFFICIENCY (%)

D

η

INPUT RETURN LOSS (dB)IRL,

, DRAIN EFFICIENCY (%)

D

η

ARCHIVE INFORMATION

17

700 mA

16

500 mA

, POWER GAIN (dB)

ps

G

15

300 mA

14

1

Figure 5. Power Gain versus Output Power

MRF5S9101MR1 MRF5S9101MBR1

6

10 100

P

, OUTPUT POWER (WATTS)

out

900 mA

1300 mA

1100 mA

VDD = 26 Vdc
f = 940 MHz

1000

17

16

, POWER GAIN (dB)

ps

G

15

20 V

14

0

20 40 60 80 100 120 140 160 180

Figure 6. Power Gain versus Output Power

16 V

P

, OUTPUT POWER (WATTS) CW

out

24 V

Freescale Semiconductor

32 V

28 V

200

RF Device Data