C
O
O
Freescale Semiconductor
Technical Data
Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
RF Power Field Effect Transistors
N- Channel Enhancement -Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large- signal, common-source amplifier
applications in 26 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V
I
= 950 mA, P
DQ
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB
N
Drain Efficiency — 28%
ACPR @ 750 kHz Offset — - 46.8 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
RMATI
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
= 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
out
Operation
DD
= 26 Volts,
DD
Document Number: MRF5S9100
Rev. 4, 5/2006
MRF5S9100MR1
MRF5S9100MBR1
880 MHz, 20 W AVG., 26 V
SINGLE N-CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB - 4
PLASTIC
MRF5S9100MR1
CASE 1484-04, STYLE 1
MRF5S9100MBR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
HIVE INF
Gate-Source Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
AR
Operating Junction Temperature T
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 20 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
R
DSS
GS
P
stg
θ
D
J
JC
- 0.5, +68 Vdc
- 0.5, +15 Vdc
336
1.92
- 65 to +150 °C
200 °C
(1,2)
0.52
TO-272 WB - 4
PLASTIC
W
W/°C
ARCHIVE INFORMATION
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
1
C
O
O
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J - STD - 020 3 260 °C
Table 5. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
N
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µA)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 950 mAdc)
RMATI
Drain-Source On- Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, P
Single-Carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
HIVE INF
@ 0.01% Probability on CCDF
Power Gain G
Drain Efficiency η
Adjacent Channel Power Ratio ACPR — - 46.8 -45 dBc
AR
Input Return Loss IRL — -19 -9 dB
1. Part is internally input matched.
(1)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
C
DSS
DSS
GSS
g
fs
oss
rss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
2 2.8 3.5 Vdc
— 3.7 — Vdc
— 0.21 0.3 Vdc
— 7 — S
— 70 — pF
— 2.2 — pF
= 20 W Avg. N-CDMA, f = 880 MHz,
out
18 19.5 — dB
26 28 — %
ARCHIVE INFORMATION
MRF5S9100MR1 MRF5S9100MBR1
2
RF Device Data
Freescale Semiconductor
C
O
O
V
BIAS
++
C22 C21
B1
+
C18C19C20
L1
L2
C17 C16 C15
+
V
SUPPLY
++
C13C14
RF
INPUT
Z1 Z2
C1
N
Z1, Z15 0.200″ x 0.080″ Microstrip
Z2 0.105″ x 0.080″ Microstrip
Z3 0.954″ x 0.080″ Microstrip
Z4 0.115″ x 0.220″ Microstrip
Z5 0.375″ x 0.220″ Microstrip
Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper
Z7 0.152″ x 0.620″ Microstrip
RMATI
Table 6. MRF5S9100MR1(MBR1) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead, Surface Mount 2743019447 Fair-Rite
C1, C12, C18 18 pF Chip Capacitors 100B180JP 500X ATC
C2 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson Dielectrics
C3, C11 0.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics
C4 6.2 pF Chip Capacitor 100B6R2JP 500X ATC
C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC
C7, C8 11 pF Chip Capacitors 100B110JP 500X ATC
HIVE INF
C9, C10 5.1 pF Chip Capacitors 100B5R1JP 500X AT C
C13
C14, C15
C16, C17, C19
C20, C21
AR
C22
L1 7.15 nH Inductor 1606-7 CoilCraft
L2 22 nH Inductor B07T-5 CoilCraft
Z4 Z7
Z3
C3C2
Figure 1. MRF5S9100MR1(MBR1) Test Circuit Schematic
470 mF, 63 V Electrolytic Capacitor
22 mF, 50 V Tantalum Capacitors
0.56 mF, 50 V Chip Capacitors
47 mF, 16 V Tantalum Capacitors
100 mF, 50 V Electrolytic Capacitor
Z5
C4
Z6
C5
DUT
Z8
Z8 0.163″ x 0.620″ Microstrip
Z9 0.238″ x 0.620″ Microstrip
Z10 0.077″ x 0.620″ Microstrip
Z12 0.381″ x 0.220″ Microstrip
Z13 0.114″ x 0.220″ Microstrip
Z14 1.052″ x 0.080″ Microstrip
PCB Arlon GX0300, 0.030″, εr = 2.55
C8C6
Z11
Z12
Z10
Z9
C7
NACZF471M63V Nippon
T491X226K035AS Kemet
C1825C564J5GAC Kemet
T491D4T6K016AS Kemet
515D107M050BB6A Multicomp
C10
C9
Z13
Z14
C12
C11
RF
OUTPUT
Z15
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
3
C
O
O
C21 C20
C15 C14
N
RMATI
V
GG
CUT OUT AREA
WB2
C16C19
C8C6
L2
C7
C17
C10
C9
C11
C22
B1
C18
C1
C4
C2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
WB1
L1
C5C3
C13
MRF9100M
Rev 2
V
DD
C12
HIVE INF
AR
Figure 2. MRF5S9100MR1(MBR1) Test Circuit Component Layout
ARCHIVE INFORMATION
MRF5S9100MR1 MRF5S9100MBR1
4
RF Device Data
Freescale Semiconductor
C
O
O
TYPICAL CHARACTERISTICS
N
RMATI
22
20 40
18 30
16 20
14 −30
12 −40
, POWER GAIN (dB)
ps
G
10 −50
8−60
6
830
Figure 3. IS-95 Broadband Performance @ P
22
20 8
18 6
16 4
14 −40
12 −50
, POWER GAIN (dB)
ps
G
10 −60
G
ps
η
D
VDD = 26 Vdc, P
N−CDMA IS− 95 (Pilot, Sync, Paging, Traffic
IRL
Codes 8 through 13)
ACPR
ALT
840 850 860 870 880 890 900 910
f, FREQUENCY (MHz)
G
ps
η
D
VDD = 26 Vdc, P
N−CDMA IS− 95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
IRL
ACPR
= 20 W (Avg.), IDQ = 950 mA
out
= 2 W (Avg.), IDQ = 950 mA
out
50
−70
920
= 20 Watts Avg.
out
10
, DRAIN
D
η
EFFICIENCY (%)
ACPR (dBc), ALT (dBc)
, DRAIN
D
η
EFFICIENCY (%)
−10
−15
−20
−25
INPUT RETURN LOSS (dB)IRL,
−30
−10
−15
−20
HIVE INF
21
IDQ = 1425 mA
20
1150 mA
950 mA
AR
19
700 mA
18
, POWER GAIN (dB)
ps
G
17
16
0.1
475 mA
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two− Tone Measurements, 100 kHz Tone Spacing
1 10 100 1000
P
, OUTPUT POWER (WATTS) PEP
out
Figure 5. Two- Tone Power Gain versus
Output Power
ACPR (dBc), ALT (dBc)
700 mA
−25
INPUT RETURN LOSS (dB)IRL,
−30
1425 mA
ARCHIVE INFORMATION
1150 mA
950 mA
8−70
6
830
Figure 4. IS-95 Broadband Performance @ P
ALT
840 850 860 870 880 890 900 910
f, FREQUENCY (MHz)
−20
−25
−30
−35
IDQ = 475 mA
−40
−45
−50
IMD, THIRD ORDER
−55
−60
−65
INTERMODULATION DISTORTION (dBc)
−70
1000
0.1
Figure 6. Third Order Intermodulation Distortion
−80
920
= 2 Watts Avg.
out
VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two− Tone Measurements, 100 kHz Tone Spacing
1 10 100
P
, OUTPUT POWER (WATTS) PEP
out
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
5
C
O
O
TYPICAL CHARACTERISTICS
0
−10
−20
3rd Order
−30
5th Order
−40
7th Order
−50
INTERMODULATION DISTORTION (dBc)IMD,
−60
−70
0.1
N
VDD = 26 Vdc, P
Two− Tone Measurements, Center Frequency = 880 MHz
Figure 7. Intermodulation Distortion Products
RMATI
HIVE INF
20
19.5
= 96 W (PEP), IDQ = 950 mA
out
110
TWO−TONE SPACING (MHz)
versus Tone Spacing
50
VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz
45 −35
N−CDMA IS −95 (Pilot, Sync, Paging,
40 −40
Traffic Codes 8 through 13)
35 −45
, POWER GAIN (dB)
30 −50
ACPR
ps
G
25 −55
G
ps
20 −60
15 −65
10 −70
η
D
5−75
0
, DRAIN EFFICIENCY (%)
1
D
η
Figure 9. Single- Carrier N-CDMA ACPR, Power
Gain, Efficiency and ALT1 versus Output Power
ALT1
P
, OUTPUT POWER (WATTS) AVG.
out
IDQ = 950 mA
f = 880 MHz
100
58
57
56
55
54
53
52
, OUTPUT POWER (dBm)
51
out
P
50
49
48
10
10
10
)
2
P3dB = 51.58 dBm (143 W)
P1dB = 50.71 dBm (117 W)
VDD = 26 Vdc, IDQ = 950 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 880 MHz
28
29 30 31 32 33 34 35 36 37
Pin, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
−30
ALT1, CHANNEL POWER (dBm)
−80
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Ideal
Actual
38
19
AR
18.5
20 V
18
, POWER GAIN (dB)
ps
G
17.5
17
0
MRF5S9100MR1 MRF5S9100MBR1
6
16 V
VDD = 12 V
30 60 90 120 150 220
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain versus Output Power
24 V
32 V
180
9
10
8
10
MTTF FACTOR (HOURS x AMPS
7
10
80
100 120 140 160 180
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 11. MTTF Factor versus Junction Temperature
2
for MTTF in a particular application.
D
Freescale Semiconductor
200
2
RF Device Data
ARCHIVE INFORMATION
C
O
O
N
RMATI
f = 895 MHz
f = 865 MHz
Z
load
Zo = 5 Ω
f = 895 MHz
Z
source
f = 865 MHz
HIVE INF
AR
VDD = 26 Vdc, IDQ = 950 mA, P
f
MHz
865
880
895
Z
= Test circuit impedance as measured from
source
Z
= Test circuit impedance as measured
load
Input
Matching
Network
Figure 12. Series Equivalent Source and Load Impedance
Z
source
Ω
3.0 - j1.8
2.8 - j1.9
2.7 - j1.7
gate to ground.
from drain to ground.
Device
Under Test
Z
source
= 20 W Avg.
out
1.4 - j0.7
1.5 - j0.6
1.5 - j0.5
Z
load
Z
load
Ω
Output
Matching
Network
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
7
PACKAGE DIMENSIONS
D1
A2
NOTE 7
GATE LEAD
4X
b1
M
aaa C
A1
c1
2X
D2
D3
B
E1
E3
2X
DRAIN LEAD
A
D
4X
e
A
2X
E
DATUM
H
PLANE
F
ZONE J
A
2X
E2
E5
E4
4
C
SEATING
PLANE
PIN 5
NOTE 8
1
23
CASE 1486- 03
E5
BOTTOM VIEW
ISSUE C
TO-270 WB-4
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M− 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H− .
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B − TO BE DETERMINED AT
DATUM PLANE −H −.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIMAMIN MAX MIN MAX
.100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .712 .720 18.08 18.29
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48
D3 .600 − − − 15.24 − − −
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56
E3 .124 .132 3.15 3.35
E4 .270 − − − 6.86 − − −
E5 .346 .350 8.79 8.89
F
.025 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e
.106 BSC
aaa
.004 0.10
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
0.64 BSC
2.69 BSC
PLASTIC
MRF5S9100MR1
MRF5S9100MR1 MRF5S9100MBR1
8
RF Device Data
Freescale Semiconductor
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
9
MRF5S9100MR1 MRF5S9100MBR1
10
RF Device Data
Freescale Semiconductor
RF Device Data
Freescale Semiconductor
MRF5S9100MR1 MRF5S9100MBR1
11
How to Reach Us:
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800- 521 - 6274 or +1 -480-768 - 2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8- 1, Shimo - Meguro, Meguro-ku,
Tokyo 153 -0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800- 441 - 2447 or 303 -675-2140
Fax: 303-675- 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb - free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS - compliant and/or non-Pb - free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
MRF5S9100MR1 MRF5S9100MBR1
Document Number: MRF5S9100
Rev. 4, 5/2006
12
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
RF Device Data
Freescale Semiconductor
Loading...