Freescale MRF5S9100MR1, MRF5S9100MBR1 Technical Data

C

O

O

Freescale Semiconductor

Technical Data

Replaced by MRF5S9100NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.

RF Power Field Effect Transistors

N- Channel Enhancement -Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large- signal, common-source amplifier
applications in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V

I

= 950 mA, P

DQ

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.5 dB

N

Drain Efficiency — 28%
ACPR @ 750 kHz Offset — - 46.8 dBc @ 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW
Output Power

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• 200°C Capable Plastic Package

RMATI

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

= 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

out

Operation

DD

= 26 Volts,

DD

Document Number: MRF5S9100

Rev. 4, 5/2006

MRF5S9100MR1

MRF5S9100MBR1

880 MHz, 20 W AVG., 26 V

SINGLE N-CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB - 4

PLASTIC

MRF5S9100MR1

CASE 1484-04, STYLE 1

MRF5S9100MBR1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

HIVE INF

Gate-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

AR

Operating Junction Temperature T

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 20 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

R

DSS

GS

P

stg

θ

D

J

JC

- 0.5, +68 Vdc

- 0.5, +15 Vdc

336

1.92

- 65 to +150 °C

200 °C

(1,2)

0.52

TO-272 WB - 4

PLASTIC

W

W/°C

ARCHIVE INFORMATION

Unit

°C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

 Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF5S9100MR1 MRF5S9100MBR1

1

C

O

O

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model (per JESD22-A114) 1C (Minimum)

Machine Model (per EIA/JESD22 - A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J - STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

N

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 µA)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 950 mAdc)

RMATI

Drain-Source On- Voltage

(VGS = 10 Vdc, ID = 2.0 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

Dynamic Characteristics

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, P
Single-Carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

HIVE INF

@ 0.01% Probability on CCDF

Power Gain G

Drain Efficiency η

Adjacent Channel Power Ratio ACPR — - 46.8 -45 dBc

AR

Input Return Loss IRL — -19 -9 dB

1. Part is internally input matched.

(1)

= 25°C unless otherwise noted)

C

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

C

DSS

DSS

GSS

g

fs

oss

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2 2.8 3.5 Vdc

— 3.7 — Vdc

— 0.21 0.3 Vdc

— 7 — S

— 70 — pF

— 2.2 — pF

= 20 W Avg. N-CDMA, f = 880 MHz,

out

18 19.5 — dB

26 28 — %

ARCHIVE INFORMATION

MRF5S9100MR1 MRF5S9100MBR1

2

RF Device Data

Freescale Semiconductor

C

O

O

V

BIAS

++

C22 C21

B1

+

C18C19C20

L1

L2

C17 C16 C15

+

V

SUPPLY

++

C13C14

RF

INPUT

Z1 Z2

C1

N

Z1, Z15 0.200″ x 0.080″ Microstrip
Z2 0.105″ x 0.080″ Microstrip
Z3 0.954″ x 0.080″ Microstrip
Z4 0.115″ x 0.220″ Microstrip
Z5 0.375″ x 0.220″ Microstrip
Z6, Z11 0.200″ x 0.220″ x 0.620″ Taper
Z7 0.152″ x 0.620″ Microstrip

RMATI

Table 6. MRF5S9100MR1(MBR1) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1 Ferrite Bead, Surface Mount 2743019447 Fair-Rite

C1, C12, C18 18 pF Chip Capacitors 100B180JP 500X ATC

C2 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson Dielectrics

C3, C11 0.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson Dielectrics

C4 6.2 pF Chip Capacitor 100B6R2JP 500X ATC

C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC

C7, C8 11 pF Chip Capacitors 100B110JP 500X ATC

HIVE INF

C9, C10 5.1 pF Chip Capacitors 100B5R1JP 500X AT C

C13

C14, C15

C16, C17, C19

C20, C21

AR

C22

L1 7.15 nH Inductor 1606-7 CoilCraft

L2 22 nH Inductor B07T-5 CoilCraft

Z4 Z7

Z3

C3C2

Figure 1. MRF5S9100MR1(MBR1) Test Circuit Schematic

470 mF, 63 V Electrolytic Capacitor

22 mF, 50 V Tantalum Capacitors

0.56 mF, 50 V Chip Capacitors

47 mF, 16 V Tantalum Capacitors

100 mF, 50 V Electrolytic Capacitor

Z5

C4

Z6

C5

DUT

Z8

Z8 0.163″ x 0.620″ Microstrip
Z9 0.238″ x 0.620″ Microstrip
Z10 0.077″ x 0.620″ Microstrip
Z12 0.381″ x 0.220″ Microstrip
Z13 0.114″ x 0.220″ Microstrip
Z14 1.052″ x 0.080″ Microstrip
PCB Arlon GX0300, 0.030″, εr = 2.55

C8C6

Z11

Z12

Z10

Z9

C7

NACZF471M63V Nippon

T491X226K035AS Kemet

C1825C564J5GAC Kemet

T491D4T6K016AS Kemet

515D107M050BB6A Multicomp

C10

C9

Z13

Z14

C12

C11

RF

OUTPUT

Z15

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRF5S9100MR1 MRF5S9100MBR1

3

C

O

O

C21 C20

C15 C14

N

RMATI

V

GG

CUT OUT AREA

WB2

C16C19

C8C6

L2

C7

C17

C10

C9

C11

C22

B1

C18

C1

C4

C2

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

WB1

L1

C5C3

C13

MRF9100M
Rev 2

V

DD

C12

HIVE INF

AR

Figure 2. MRF5S9100MR1(MBR1) Test Circuit Component Layout

ARCHIVE INFORMATION

MRF5S9100MR1 MRF5S9100MBR1

4

RF Device Data

Freescale Semiconductor