Freescale MRF5S21090HR3, MRF5S21090HSR3 Technical Data
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicati o ns . To be us ed in C l as s A B fo r P CN -- PCS / ce l lu l ar r a di o a nd W L L
applications.
• Typical 2--carrier W--CDMA Performance: VDD= 28 Volts, IDQ= 850 mA,
P
= 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
out
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDDOperation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
µ″ Nominal.
Document Number: MRF5S21090H
Rev. 3, 10/2008
MRF5S21090HR3
MRF5S21090HSR3
2110--2170 MHz, 19 W AVG., 28 V
2 x W -- CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465 -- 06, STYLE 1
NI--780
MRF5S21090HR3
CASE 465A--06, STYLE 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
LIFETIME BUY
Gate--Source Voltage V
Total Device Dissipation @ TC= 25°C
Derate above 25°C
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature T
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
R
DSS
GS
P
stg
θ
D
C
J
JC
NI--780S
MRF5S21090HSR3
--0.5, +65 Vdc
--0.5, +15 Vdc
269
1.5
--65 to +150 °C
150 °C
200 °C
(1,2)
0.65
0.69
W
W/°C
Unit
°C/W
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model C7 (Minimum)
Table 4. Electrical Characteristics
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS= 65 Vdc, VGS= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS= 28 Vdc, VGS= 0 Vdc)
Gate--Source Leakage Current
(VGS= 5 Vdc, VDS= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(VDS= 10 Vdc, ID= 200 µAdc)
Gate Quiescent Voltage
(VDS= 28 Vdc, ID= 850 mAdc)
Drain--Source On--Voltage
(VGS= 10 Vdc, ID= 2 Adc)
Forward Transconductance
(VDS= 10 Vdc, ID= 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 850 mA, P
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain G
Drain Efficiency η
Intermodulation Distortion IM3 — --37.5 --35 dBc
Adjacent Channel Power Ratio ACPR — --40.5 --38 dBc
LIFETIME BUY
Input Return Loss IRL — --15 --9 dB
1. Part is internally matched both on input and output.
(1)
(TC= 25°C unless otherwise noted)
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
DSS
DSS
GSS
g
fs
rss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
2.5 2.9 3.5 Vdc
— 3.9 — Vdc
— 0.25 — Vdc
— 5 — S
— 1.7 — pF
= 19 W Avg., f = 2112.5 MHz,
out
12.5 14.5 — dB
24 26 — %
MRF5S21090HR3 MRF5S21090HSR3
2
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
RF Device Data
Freescale Semiconductor
V
BIAS
R1
R2
C4
R3
C5
C3
C10
R4
W1
V
SUPPLY
+
C12C11
C13C8C7
RF
INPUT
C6
Z4
Z1 Z2 Z3 Z6 Z7
C1
C14
Z5
Z1 1.0856″ x 0.080″ Microstrip
Z2 0.130″ x 0.080″ Microstrip
Z3 0.230″ x 0.080″ Microstrip
Z4 0.347″ x 0.208″ Microstrip
Z5 0.090″ x 0.208″ Microstrip
Z6 0.650″ x 0.176″ Taper
Z7 0.623″ x 0.610″ Microstrip
Z8 0.044″ x 0.881″ Microstrip
Z9 0.044″ x 0.869″ Microstrip
Z10 1.076″ x 0.446″ Microstrip
Z11 0.320″ x 0.393″ Microstrip
C9
Z9
DUT
Z8
Z11 Z12 Z16 Z17 Z19 Z21
Z10
Z12 0.609″ x 0.220″ Microstrip
Z13 0.290″ x 0.106″ Microstrip
Z14 0.290″ x 0.106″ Microstrip
Z15 0.080″ x 0.025″ Microstrip
Z16 1.080″ x 0.160″ Microstrip
Z17 0.180″ x 0.080″ Microstrip
Z18 0.260″ x 0.147″ Microstrip
Z19 0.500″ x 0.080″ Microstrip
Z20 0.199″ x 0.147″ Microstrip
Z21 0.365″ x 0.080″ Microstrip
PCB Arlon GX0300--55--22, 0.03″, εr= 2.55
Z13
Z14
Z15
C2
Z18 Z20
C15
Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
C2 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C3 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC
C4, C12 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet
LIFETIME BUY
C5 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C6 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C7 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC
C8 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC
C9, C10 0.56 µF Chip Capacitors 700A561MT150XT ATC
C11 1000 pF Chip Capacitor ATC100B102JT500XT ATC
C13 470 µF, 35 V Electrolytic Capacitor EKME630ELL471MK25S Nippon Chemi--Con
C14, C15 0.4 – 2.5 Variable Capacitors, Gigatrim 27281SL Johanson
R1
R2
R3, R4
W1 Wire Strap
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12 Ω, 1/4 W Chip Resistors
CRCW12061001FKEA Vishay
CRCW12065600FKEA Vishay
CRCW120612R0FKEA Vishay
RF
OUTPUT
RF Device Data
Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
MRF5S21090HR3 MRF5S21090HSR3
3
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