Freescale MRF5S21090HR3, MRF5S21090HSR3 Technical Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica­ti o ns . To be us ed in C l as s A B fo r P CN -- PCS / ce l lu l ar r a di o a nd W L L
applications.

• Typical 2--carrier W--CDMA Performance: VDD= 28 Volts, IDQ= 850 mA,

P

= 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

out

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

µ″ Nominal.

Document Number: MRF5S21090H

Rev. 3, 10/2008

MRF5S21090HR3

MRF5S21090HSR3

2110--2170 MHz, 19 W AVG., 28 V

2 x W -- CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

CASE 465 -- 06, STYLE 1

NI--780

MRF5S21090HR3

CASE 465A--06, STYLE 1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

LIFETIME BUY

Gate--Source Voltage V

Total Device Dissipation @ TC= 25°C

Derate above 25°C

Storage Temperature Range T

Case Operating Temperature T

Operating Junction Temperature T

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.

R

DSS

GS

P

stg

θ

D

C

J

JC

NI--780S

MRF5S21090HSR3

--0.5, +65 Vdc

--0.5, +15 Vdc

269

1.5

--65 to +150 °C

150 °C

200 °C

(1,2)

0.65

0.69

W

W/°C

Unit

°C/W

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

 Freescale Semiconductor, Inc., 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF5S21090HR3 MRF5S21090HSR3

1

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M3 (Minimum)

Charge Device Model C7 (Minimum)

Table 4. Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS= 65 Vdc, VGS= 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS= 28 Vdc, VGS= 0 Vdc)

Gate--Source Leakage Current

(VGS= 5 Vdc, VDS= 0 Vdc)

On Characteristics (DC)

Gate Threshold Voltage

(VDS= 10 Vdc, ID= 200 µAdc)

Gate Quiescent Voltage

(VDS= 28 Vdc, ID= 850 mAdc)

Drain--Source On--Voltage

(VGS= 10 Vdc, ID= 2 Adc)

Forward Transconductance

(VDS= 10 Vdc, ID= 2 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 850 mA, P
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain G

Drain Efficiency η

Intermodulation Distortion IM3 — --37.5 --35 dBc

Adjacent Channel Power Ratio ACPR — --40.5 --38 dBc

LIFETIME BUY

Input Return Loss IRL — --15 --9 dB

1. Part is internally matched both on input and output.

(1)

(TC= 25°C unless otherwise noted)

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

DSS

DSS

GSS

g

fs

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2.5 2.9 3.5 Vdc

— 3.9 — Vdc

— 0.25 — Vdc

— 5 — S

— 1.7 — pF

= 19 W Avg., f = 2112.5 MHz,

out

12.5 14.5 — dB

24 26 — %

MRF5S21090HR3 MRF5S21090HSR3

2

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

RF Device Data

Freescale Semiconductor

V

BIAS

R1

R2

C4

R3

C5

C3

C10

R4

W1

V

SUPPLY

+

C12C11

C13C8C7

RF

INPUT

C6

Z4

Z1 Z2 Z3 Z6 Z7

C1

C14

Z5

Z1 1.0856″ x 0.080″ Microstrip
Z2 0.130″ x 0.080″ Microstrip
Z3 0.230″ x 0.080″ Microstrip
Z4 0.347″ x 0.208″ Microstrip
Z5 0.090″ x 0.208″ Microstrip
Z6 0.650″ x 0.176″ Taper
Z7 0.623″ x 0.610″ Microstrip
Z8 0.044″ x 0.881″ Microstrip
Z9 0.044″ x 0.869″ Microstrip
Z10 1.076″ x 0.446″ Microstrip
Z11 0.320″ x 0.393″ Microstrip

C9

Z9

DUT

Z8

Z11 Z12 Z16 Z17 Z19 Z21

Z10

Z12 0.609″ x 0.220″ Microstrip
Z13 0.290″ x 0.106″ Microstrip
Z14 0.290″ x 0.106″ Microstrip
Z15 0.080″ x 0.025″ Microstrip
Z16 1.080″ x 0.160″ Microstrip
Z17 0.180″ x 0.080″ Microstrip
Z18 0.260″ x 0.147″ Microstrip
Z19 0.500″ x 0.080″ Microstrip
Z20 0.199″ x 0.147″ Microstrip
Z21 0.365″ x 0.080″ Microstrip
PCB Arlon GX0300--55--22, 0.03″, εr= 2.55

Z13

Z14

Z15

C2

Z18 Z20

C15

Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic

Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC

C2 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC

C3 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC

C4, C12 0.1 µF Chip Capacitors CDR33BX104AKYS Kemet

LIFETIME BUY

C5 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC

C6 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC

C7 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC

C8 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC

C9, C10 0.56 µF Chip Capacitors 700A561MT150XT ATC

C11 1000 pF Chip Capacitor ATC100B102JT500XT ATC

C13 470 µF, 35 V Electrolytic Capacitor EKME630ELL471MK25S Nippon Chemi--Con

C14, C15 0.4 – 2.5 Variable Capacitors, Gigatrim 27281SL Johanson

R1

R2

R3, R4

W1 Wire Strap

1 kΩ, 1/4 W Chip Resistor

560 kΩ, 1/4 W Chip Resistor

12 Ω, 1/4 W Chip Resistors

CRCW12061001FKEA Vishay

CRCW12065600FKEA Vishay

CRCW120612R0FKEA Vishay

RF

OUTPUT

RF Device Data
Freescale Semiconductor

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

MRF5S21090HR3 MRF5S21090HSR3

3

W1

C13

V

DD

C3C4C5

C10

R2

R1

R3

V

GG

C9

C6

C7 C8

C11

R4

C12

C1

C14

CUT OUT AREA

Frees cale has b egu n th e tra nsit ion of ma rki ng Pr int e d Circu it Bo ard s (PC Bs) with the Free scal e Se mico ndu ctor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout

C2

C15

MRF5S21090
Rev 5

LIFETIME BUY

MRF5S21090HR3 MRF5S21090HSR3

4

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

15

G

ps

14

13

η

12

IRL

11

10

9

, POWER GAIN (dB)

8

ps

IM3

G

7

6

ACPR

5

VDD= 28 Vdc, P
2--Carrier W--CDMA, 10 MHz Carrier Spacing

D

3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)

f, FREQUENCY (MHz)

= 19 W (Avg.), IDQ= 850 mA

out

40

35

30

, DRAIN

D

25

η

20

--20

--25

--30

--35

--40

--45

2200218021602140212021002080

EFFICIENCY (%)

--10

--15

--20

--25

--30

IM3 (dBc), ACPR (dBc)

INPUT RETURN LOSS (dB)IRL,

--35

Figure 3. 2--Carrier W-- CDMA Broadband Performance

17

VDD= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz

IDQ= 1200 mA

16

1000 mA

15

850 mA

14

650 mA

, POWER GAIN (dB)

ps

G

13

450 mA

12

Two--Tone Measurement, 10 MHz Tone Spacing

1

P

, OUTPUT POWER (WATTS) PEP

out

10

100

Figure 4. Two--Tone Power Gain versus

Output Power

--15
VDD= 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

--20
Two--Tone Measurement, 10 MHz Tone Spacing

--25

--30

--35

IMD,THIRD ORDER

--40

--45

INTERMODULATION DISTORTION (dBc)

--50

650 mA

1

P

IDQ= 450 mA

1200 mA

10

, OUTPUT POWER (WATTS) PEP

out

1000 mA

850 mA

100

Figure 5. 3rd Order Intermodulation Distortion

versus Output Power

LIFETIME BUY

--20

--25
3rd Order

--30

--35

5th Order

--40

--45
7th Order

--50

INTERMODULATION DISTORTION (dBc)IMD,

--55

--60

0.1

Figure 6. Intermodulation Distortion Products

RF Device Data
Freescale Semiconductor

VDD= 28 Vdc, P
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz

1

TWO--TONE SPACING (MHz)

= 90 W (PEP), IDQ= 850 mA

out

versus Tone Spacing

57

55

53

P1dB = 50.47 dBm (111.4 W)

51

49

, OUTPUT POWER (dBm)

out

P

47

45

10

30

P3dB = 51.17 dBm (130.9 W)

VDD= 28 Vdc, IDQ= 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 2140 MHz

32 34 36 38 40

Pin, INPUT POWER (dBm)

Figure 7. Pulse CW Output Power versus

Ideal

Actual

42

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

Input Power

MRF5S21090HR3 MRF5S21090HSR3

5

TYPICAL CHARACTERISTICS

--1

5

4

0

η

,

D

R

A

I

N

E

F

F

I

C

I

E

N

C

Y

(

%

)

,

G

,

P

O

W

E

R

G

A

I

N

(

d

B

)

1

0

9

.

0

VDD= 28 Vdc, IDQ= 850 mA, f1 = 2135 MHz,

35

f2 = 2145 MHz, 2 x W--CDMA, 10 MHz
@ 3.84 MHz Bandwidth, PAR = 8.5 dB

30

@ 0.01% Probability (CCDF)

25

ps

20

15

10

D

G

ps

IM3

5

0 --55

1 10

P

, POWER (WATTS) W--CDMA

out

η

D

ACPR

Figure 8. 2--Carrier W-- CDMA ACPR, IM3,

Power Gain and Drain Efficiency

versus Output Power

W--CDMA TEST SIGNAL

--20

--25

--30

--35

--40

--45

--50

)

2

8

10

7

10

IM3 (dBc), ACPR (dBc)

MTTF FACTOR (HOURS x AMPS

6

10

100

120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I

2

for MTTF in a particular application.

D

Figure 9. MTTF Factor versus Junction Temperature

220

2

100

10

1

0.1

0.01
W--CDMA. ACPR Measured in 3.84 MHz Channel

Bandwidth @ ±5 MHz Offset. IM3 Measured in

LIFETIME BUY

.001

3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =

8.5 dB @ 0.01% Probability on CCDF

0001

0

2 4 6 8

PEAK--TO--AVERAGE (dB)

Figure 10. CCDF W--CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single Carrier Test Signal

--20

--30

--40

--50

--60

--70

(dB)

--80

--90

--100

--IM3 in

3.84 MHz BW

--110

--120

10

3.84 MHz
Channel BW

--ACPR in

3.84 MHz BW

f, FREQUENCY (MHz)

+ACPR in

3.84 MHz BW

+IM3 in

3.84 MHz BW

205 15100--5--10--15--20--25 25

Figure 11. 2-Carrier W-CDMA Spectrum

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

MRF5S21090HR3 MRF5S21090HSR3

RF Device Data

6

Freescale Semiconductor

f = 2200 MHz

Z

load

f = 2200 MHz

f = 2100 MHz

Z

source

Zo= 10 Ω

f = 2100 MHz

LIFETIME BUY

VDD= 28 Vdc, IDQ= 850 mA, P

f

MHz

2100

2120

2160

2200 1.8 -- j1.63.0 -- j4.0

Z

= Test circuit impedance as measured from

source

Z

= Test circuit impedance as measured

load

Input
Matching
Network

Z

source

Ω

3.4 -- j5.1

3.2 -- j5.4

3.0 -- j4.4

gate to ground.

from drain to ground.

Device
Under
Test

Z

source

out

Z

= 19 W Avg.

Z

load

Ω

2.4 -- j2.0

2.2 -- j2.1

2.1 -- j1.9

load

Output
Matching
Network

LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09

RF Device Data
Freescale Semiconductor

Figure 12. Series Equivalent Source and Load Impedance

MRF5S21090HR3 MRF5S21090HSR3

7

PACKAGE DIMENSIONS

B

B

(FLANGE)

bbb B

H

E

A A

G

D

M

T

(FLANGE)

Q

1

2

M

A

2X

3

K

M

(INSULATOR)

M

M

bbb B

T

(LID)

N

M

ccc B

T

M

bbb B

M

A

M

A

M

A

T

M

M

M

M

ccc B

aaa B

A

T

M

A

T

(LID)

R

M

(INSULATOR)

S

M

M

M

C

SEATING

T

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 1.335 1.345 33.91 34.16
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.66 19.96
N 0.772 0.788 19.60 20.00
Q .118 .138 3.00 3.51
R 0.365 0.375 9.27 9.53

S 0.365 0.375 9.27 9.52
aaa 0.005 REF 0.127 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF

F

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465--06

ISSUE G

NI--780

MRF5S21090HR3

U

4X

(FLANGE)

B

B

(FLANGE)

H

A

M

bbb B

E

(FLANGE)

NOTES:

Z

4X

1

2X

2

(LID)

K

D

M

A

T

M

(LID)

N

M

ccc B

(INSULATOR)

M

M

bbb B

C

3

(LID)

M

A

T

A

T

M

M

M

M

ccc B

M

aaa B

R

M

(INSULATOR)

S

M

M

M

A

T

A

T

F

SEATING

T

A

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.

2. CONTROLLING DIMENSION: INCH.

3. DELETED

4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

A 0.805 0.815 20.45 20.70
B 0.380 0.390 9.65 9.91
C 0.125 0.170 3.18 4.32
D 0.495 0.505 12.57 12.83

E 0.035 0.045 0.89 1.14

F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
M 0.774 0.786 19.61 20.02
N 0.772 0.788 19.61 20.02
R 0.365 0.375 9.27 9.53

S 0.365 0.375 9.27 9.52
U ------ 0.040 ------ 1.02

Z ------ 0.030 ------ 0.76

aaa 0.005 REF 0.127 REF

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

STYLE 1:

PIN 1. DRAIN

2. GATE

5. SOURCE

MILLIMETERSINCHES

CASE 465A--06

ISSUE H
NI--780S

MRF5S21090HSR3

MRF5S21090HR3 MRF5S21090HSR3

8

RF Device Data

Freescale Semiconductor

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

3 Oct. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN12779, p. 1, 2

• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3

• Added Product Documentation and Revision History, p. 9

RF Device Data
Freescale Semiconductor

MRF5S21090HR3 MRF5S21090HSR3

9

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 Freescale Semiconductor, Inc. 2008. All rights reserved.

MRF5S21090HR3 MRF5S21090HSR3

Document Number: MRF5S21090H
Rev. 3, 10/2008

10

RF Device Data

Freescale Semiconductor