Freescale MRF5S19150HR3, MRF5S19150HSR3 DATA SHEET

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.

• Typical 2- Carrier N-CDMA Performance for V

1400 mA, Avg., P
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

= 32 Watts Avg., Full Frequency Band, IS- 95 CDMA

out

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -50 dB @ 30 kHz Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,

100 Watts CW Output Power

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 V Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

= 28 Volts, IDQ =

DD

µ″ Nominal.

MRF5S19150H

Rev. 1, 12/2004

MRF5S19150HR3

MRF5S19150HSR3

1990 MHz, 32 W AVG., 28 V

2 x N- CDMA

LATERAL N- CHANNEL

RF POWER MOSFETs

CASE 465B-03, STYLE 1

NI-880

MRF5S19150HR3

CASE 465C-02, STYLE 1

NI-880S

MRF5S19150HSR3

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

CW Operation CW 100 W

DSS

GS

P

stg

D

J

-0.5, +65 Vdc

-0.5, +15 Vdc

427

2.44

- 65 to +150 °C

200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 32 W CW

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.

2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION
packaging MOS devices should be observed.

- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

R

θ

JC

(1,2)

0.41

0.44

W

W/°C

Unit

°C/W

 Freescale Semiconductor, Inc., 2004. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

1

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M3 (Minimum)

Charge Device Model C7 (Minimum)

Table 4. Electrical Characteristics (T

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

= 65 Vdc, VGS = 0 Vdc)

DS

Zero Gate Voltage Drain Leakage Current

(V

= 28 Vdc, VGS = 0 Vdc)

DS

Gate-Source Leakage Current

(V

= 5 Vdc, VDS = 0 Vdc)

GS

On Characteristics

Gate Threshold Voltage

(V

= 10 Vdc, ID = 360 µAdc)

DS

Gate Quiescent Voltage

(V

= 28 Vdc, ID = 1400 mAdc)

DS

Drain-Source On-Voltage

(V

= 10 Vdc, ID = 3.6 Adc)

GS

Forward Transconductance

(V

= 10 Vdc, ID = 3.6 Adc)

DS

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, P
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2-Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. Peak/Avg = 9.8 dB @

0.01% Probability on CCDF.

Power Gain

Drain Efficiency η

Intermodulation Distortion IM3 — -36.5 -35 dBc

Adjacent Channel Power Ratio ACPR — -50 -48 dBc

Input Return Loss IRL — -17 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

I

DSS

I

DSS

I

GSS

V

GS(th)

V

GS(Q)

V

DS(on)

C

G

g

fs

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2.5 2.8 3.5 Vdc

— 3.8 — Vdc

— 0.24 — Vdc

— 9 — S

— 3.1 — pF

= 32 W Avg., f1 = 1930 MHz,

out

13 14 — dB

24 26 — %

MRF5S19150HR3 MRF5S19150HSR3

2

RF Device Data

Freescale Semiconductor

V

BIAS

+

C9

R1

R2

+

C8

C7 C6

B1

R3

C5

C17 C18 C19 C20

C14

++

V

SUPPLY

+

++

C23C16C15

C22C21

RF

INPUT

Z1 Z2 Z4 Z5 Z6

C1

Z1 1.023″ x 0.082″ Microstrip
Z2 0.398″ x 0.082″ Microstrip
Z3 0.203″ x 0.082″ Microstrip
Z4 0.074″ x 0.082″ Microstrip
Z5 0.630″ x 0.084″ Microstrip
Z6 0.557″ x 1.030″ x 0.237″ Microstrip Taper
Z7 0.103″ x 1.030″ Microstrip
Z8 1.280″ x 0.046″ Microstrip

C2

Z3

C3

+

C10

Z11

DUT

C4

C11 C12

B2

R4

Z8

Z7

Z9

C13

Z13 Z14

Z10 Z15

Z12

C26 C27 C32 C33

C25

Z9 1.280″ x 0.046″ Microstrip
Z10 0.090″ x 1.055″ Microstrip
Z11 1.125″ x 0.068″ Microstrip
Z12 1.125″ x 0.068″ Microstrip
Z13 0.505″ x 1.055″ Microstrip
Z14 0.898″ x 0.105″ Microstrip
Z15 1.133″ x 0.082″ Microstrip
PCB Arlon GX0300-55-22, 0.03″, ε

C24

C29C28 C31C30

Figure 1. MRF5S19150HR3(SR3) Test Circuit Schematic

RF

OUTPUT

++

++

= 2.55

r

Table 5. MRF5S19150HR3(SR3) Test Circuit Component Designations and Values

Part Description

B1, B2 Short RF Beads

C1, C2 0.6 – 4.5 Variable Capacitors, Gigatrim

C3 0.8 pF Chip Capacitor

C4, C5, C13, C14, C24, C25 9.1 pF Chip Capacitors

C8, C10 1.0 µF, 50 V SMT Tantalum Capacitors

C6, C12, C16, C17, C18, C27, C28, C29 0.1 µF Chip Capacitors

C7, C11, C15, C26 1000 pF Chip Capacitors

C9 100 µF, 50 V Electrolytic Capacitor

C23 470 µF, 63 V Electrolytic Capacitor

C19, C20, C21, C22, C30, C31, C32, C33 22 µF, 35 V Tantalum Capacitors

R1

R2

R3, R4

1 kW Chip Resistor

560 kW Chip Resistor

12 W Chip Resistors

RF Device Data
Freescale Semiconductor

MRF5S19150HR3 MRF5S19150HSR3

3

C17 C18

C9

B1

R3

C5

R2

R1

C8

C7

C6

V

GG

C14

C15

C19 C20

C16

C23

C21 C22

V

DD

C4

C2

C10

B2

C3

C11

R4

C12

C13

CUT OUT AREA

C26

C27

C25

C28 C29

C1

MRF5S19150
Rev 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

C24

C32 C33

C30 C31

Figure 2. MRF5S19150HR3(SR3) Test Circuit Component Layout

MRF5S19150HR3 MRF5S19150HSR3

4

RF Device Data

Freescale Semiconductor