Freescale MRF 5 S 19060 MBR 1, MRF 5 S 19060 MR 1 Service Manual

www.DataSheet4U.com

C

O

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Freescale Semiconductor

Technical Data

Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.

Document Number: MRF5S19060M

Rev. 5, 5/2006

MRF5S19060MR1

RF Power Field Effect Transistors

N- Channel Enhancement -Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large-signal, common­source amplifier applications in 28 Volt base station equipment.

• Typical 2-carrier N-CDMA Performance: V

P

= 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,

out

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB

N

Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 200°C Capable Plastic Package

RMATI

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

= 28 Volts, IDQ = 750 mA,

DD

MRF5S19060MBR1

1990 MHz, 12 W AVG., 28 V

2 x N-CDMA

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB - 4

PLASTIC

MRF5S19060MR1

CASE 1484-04, STYLE 1

TO-272 WB - 4

PLASTIC

MRF5S19060MBR1

Table 1. Maximum Ratings

HIVE INF

Drain-Source Voltage V

Gate-Source Voltage V

Total Device Dissipation @ TC = 25°C

Derate above 25°C

AR

Storage Temperature Range T

Operating Junction Temperature T

Table 2. Thermal Characteristics

Thermal Resistance, Junction to Case

Case Temperature 75°C, 12 W CW

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

 Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data
Freescale Semiconductor

Rating Symbol Value Unit

DSS

GS

P

D

stg

J

Characteristic Symbol Value

R

θ

JC

MRF5S19060MR1 MRF5S19060MBR1

-0.5, +65 Vdc

-0.5, +15 Vdc

218.8

1.25

- 65 to +175 °C

200 °C

0.80

W

W/°C

ARCHIVE INFORMATION

(1)

Unit

°C/W

1

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Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1C (Minimum)

Machine Model (per EIA/JESD22 - A115) C (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J - STD - 020 3 260 °C

Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

N

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 225 µAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 750 mAdc)

RMATI

Drain-Source On- Voltage

(VGS = 5 Vdc, ID = 2.25 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2.25 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, P
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2-carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain G

HIVE INF

Drain Efficiency η

Intermodulation Distortion IM3 — -37 -35 dBc

Adjacent Channel Power Ratio ACPR — -51 -48 dBc

AR

Input Return Loss IRL — -12 -9 dB

1. Part is internally matched both on input and output.

(1)

= 25°C unless otherwise noted)

C

I

I

I

V

GS(th)

V

GS(Q)

V

DS(on)

C

DSS

DSS

GSS

g

fs

rss

ps

D

— — 10 µAdc

— — 1 µAdc

— — 1 µAdc

2.5 — 3.5 Vdc

— 3.8 — Vdc

— 0.26 — Vdc

— 5 — S

— 1.5 — pF

= 12 W Avg., f1 = 1930 MHz,

out

12.5 14 16 dB

21 23 — %

ARCHIVE INFORMATION

(continued)

MRF5S19060MR1 MRF5S19060MBR1

2

RF Device Data

Freescale Semiconductor

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Table 5. Electrical Characteristics (T

Characteristic Symbol Min Typ Max Unit

Typical RF Performance (50 ohm system)

Pulse Peak Power

(VDD = 28 Vdc, 1-Tone CW Pulsed, IDQ = 750 mA, t
1% Duty Cycle)

Video Bandwidth

(VDD = 28 Vdc, P
1 MHz to VBW, ∆ IM3<2dB)

= 60 W PEP, IDQ = 750 mA, Tone Spacing =

out

N

= 25°C unless otherwise noted) (continued)

C

P

ON

= 8 µs,

sat

VBW — 35 — MHz

— 11 0 — W

RMATI

HIVE INF

AR

ARCHIVE INFORMATION

RF Device Data
Freescale Semiconductor

MRF5S19060MR1 MRF5S19060MBR1

3

C

O

O

V

BIAS

R1

R2

+

C1 C2

Z6

R3

Z11

C3

+

C4

+

C5

+

C6

V

SUPPLY

N

RMATI

RF

INPUT

Z1 Z2 Z3 Z4 Z5

C7

C8

Z1 0.250″ x 0.083″ Microstrip
Z2* 0.500″ x 0.083″ Microstrip
Z3* 0.500″ x 0.083″ Microstrip
Z4* 0.515″ x 0.083″ Microstrip
Z5 0.480″ x 1.000″ Microstrip
Z6 1.140″ x 0.080″ Microstrip
Z7 0.600″ x 1.000″ Microstrip

C9

Z7 Z8 Z9 Z10

DUT

C10 C11

Z12

++

C13 C14 C15

Z8* 0.420″ x 0.083″ Microstrip
Z9* 0.975″ x 0.083″ Microstrip
Z10 0.250″ x 0.083″ Microstrip
Z11 0.700″ x 0.080″ Microstrip
Z12 0.700″ x 0.080″ Microstrip
PCB Taconic TLX8 -0300, 0.030″, εr = 2.55

* Variable for tuning

RF

OUTPUT

C12

Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic

Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values

HIVE INF

C1 1 µF, 35 V Tantalum Capacitor TAJB105K35 AVX

C2 10 pF 100B Chip Capacitor 100B10R0CW ATC

C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 100B6R8CW AT C

C4, C5, C14, C15 10 µF, 35 V Tantalum Capacitors TAJD106K035 AVX

AR

C6 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips

C8 0.8 pF 100B Chip Capacitor 100B0R8BW ATC

C9 1.5 pF 100B Chip Capacitor 100B1R5BW ATC

C10 1.0 pF 100B Chip Capacitor 100B1R0BW ATC

C11 0.2 pF 100B Chip Capacitor 100B0R2BW ATC

R1, R2

R3

Part Description Part Number Manufacturer

10 kW, 1/4 W Chip Resistors (1206)

10 W, 1/4 W Chip Resistors (1206)

ARCHIVE INFORMATION

MRF5S19060MR1 MRF5S19060MBR1

4

RF Device Data

Freescale Semiconductor

C

O

O

V

GG

R1

R2

C1 C2

C3

C4 C5

V

DD

N

RMATI

R3

C7 C8 C9

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout

CUT OUT AREA

C14 C15

C13

MRF5S19060M
Rev 0

C10 C11 C12

C6

HIVE INF

AR

RF Device Data
Freescale Semiconductor

ARCHIVE INFORMATION

MRF5S19060MR1 MRF5S19060MBR1

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