Page 1
www.DataSheet4U.com
C
O
O
Freescale Semiconductor
Technical Data
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
Document Number: MRF5S19060M
Rev. 5, 5/2006
MRF5S19060MR1
RF Power Field Effect Transistors
N- Channel Enhancement -Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large-signal, commonsource amplifier applications in 28 Volt base station equipment.
• Typical 2-carrier N-CDMA Performance: V
P
= 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
out
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
N
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 200°C Capable Plastic Package
RMATI
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
= 28 Volts, IDQ = 750 mA,
DD
MRF5S19060MBR1
1990 MHz, 12 W AVG., 28 V
2 x N-CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB - 4
PLASTIC
MRF5S19060MR1
CASE 1484-04, STYLE 1
TO-272 WB - 4
PLASTIC
MRF5S19060MBR1
Table 1. Maximum Ratings
HIVE INF
Drain-Source Voltage V
Gate-Source Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
AR
Storage Temperature Range T
Operating Junction Temperature T
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Rating Symbol Value Unit
DSS
GS
P
D
stg
J
Characteristic Symbol Value
R
θ
JC
MRF5S19060MR1 MRF5S19060MBR1
-0.5, +65 Vdc
-0.5, +15 Vdc
218.8
1.25
- 65 to +175 °C
200 °C
0.80
W
W/°C
ARCHIVE INFORMATION
(1)
Unit
°C/W
1
Page 2
C
O
O
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22 - A115) C (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J - STD - 020 3 260 °C
Table 5. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
N
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 225 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 750 mAdc)
RMATI
Drain-Source On- Voltage
(VGS = 5 Vdc, ID = 2.25 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2.25 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, P
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2-carrier N- CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain G
HIVE INF
Drain Efficiency η
Intermodulation Distortion IM3 — -37 -35 dBc
Adjacent Channel Power Ratio ACPR — -51 -48 dBc
AR
Input Return Loss IRL — -12 -9 dB
1. Part is internally matched both on input and output.
(1)
= 25°C unless otherwise noted)
C
I
I
I
V
GS(th)
V
GS(Q)
V
DS(on)
C
DSS
DSS
GSS
g
fs
rss
ps
D
— — 10 µAdc
— — 1 µAdc
— — 1 µAdc
2.5 — 3.5 Vdc
— 3.8 — Vdc
— 0.26 — Vdc
— 5 — S
— 1.5 — pF
= 12 W Avg., f1 = 1930 MHz,
out
12.5 14 16 dB
21 23 — %
ARCHIVE INFORMATION
(continued)
MRF5S19060MR1 MRF5S19060MBR1
2
RF Device Data
Freescale Semiconductor
Page 3
C
O
O
Table 5. Electrical Characteristics (T
Characteristic Symbol Min Typ Max Unit
Typical RF Performance (50 ohm system)
Pulse Peak Power
(VDD = 28 Vdc, 1-Tone CW Pulsed, IDQ = 750 mA, t
1% Duty Cycle)
Video Bandwidth
(VDD = 28 Vdc, P
1 MHz to VBW, ∆ IM3<2dB)
= 60 W PEP, IDQ = 750 mA, Tone Spacing =
out
N
= 25°C unless otherwise noted) (continued)
C
P
ON
= 8 µs,
sat
VBW — 35 — MHz
— 11 0 — W
RMATI
HIVE INF
AR
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
3
Page 4
C
O
O
V
BIAS
R1
R2
+
C1 C2
Z6
R3
Z11
C3
+
C4
+
C5
+
C6
V
SUPPLY
N
RMATI
RF
INPUT
Z1 Z2 Z3 Z4 Z5
C7
C8
Z1 0.250″ x 0.083″ Microstrip
Z2* 0.500″ x 0.083″ Microstrip
Z3* 0.500″ x 0.083″ Microstrip
Z4* 0.515″ x 0.083″ Microstrip
Z5 0.480″ x 1.000″ Microstrip
Z6 1.140″ x 0.080″ Microstrip
Z7 0.600″ x 1.000″ Microstrip
C9
Z7 Z8 Z9 Z10
DUT
C10 C11
Z12
++
C13 C14 C15
Z8* 0.420″ x 0.083″ Microstrip
Z9* 0.975″ x 0.083″ Microstrip
Z10 0.250″ x 0.083″ Microstrip
Z11 0.700″ x 0.080″ Microstrip
Z12 0.700″ x 0.080″ Microstrip
PCB Taconic TLX8 -0300, 0.030″, εr = 2.55
* Variable for tuning
RF
OUTPUT
C12
Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic
Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values
HIVE INF
C1 1 µF, 35 V Tantalum Capacitor TAJB105K35 AVX
C2 10 pF 100B Chip Capacitor 100B10R0CW ATC
C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 100B6R8CW AT C
C4, C5, C14, C15 10 µF, 35 V Tantalum Capacitors TAJD106K035 AVX
AR
C6 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips
C8 0.8 pF 100B Chip Capacitor 100B0R8BW ATC
C9 1.5 pF 100B Chip Capacitor 100B1R5BW ATC
C10 1.0 pF 100B Chip Capacitor 100B1R0BW ATC
C11 0.2 pF 100B Chip Capacitor 100B0R2BW ATC
R1, R2
R3
Part Description Part Number Manufacturer
10 kW, 1/4 W Chip Resistors (1206)
10 W, 1/4 W Chip Resistors (1206)
ARCHIVE INFORMATION
MRF5S19060MR1 MRF5S19060MBR1
4
RF Device Data
Freescale Semiconductor
Page 5
C
O
O
V
GG
R1
R2
C1 C2
C3
C4 C5
V
DD
N
RMATI
R3
C7 C8 C9
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout
CUT OUT AREA
C14 C15
C13
MRF5S19060M
Rev 0
C10 C11 C12
C6
HIVE INF
AR
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
MRF5S19060MR1 MRF5S19060MBR1
5
Page 6
C
O
O
TYPICAL CHARACTERISTICS
N
RMATI
14.8
14.6
V
= 28 Vdc, P
14.4
14.2
, POWER GAIN (dB)
ps
G
13.8
13.6
DD
2−Carrier N − CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
14
= 12 W (Avg.), IDQ = 750 mA
out
f, FREQUENCY (MHz)
19801960
η
G
IM3
IRL
ACPR
200019401920
Figure 3. 2- Carrier N- CDMA Broadband Performance @ P
14.2
14
13.8
13.6
13.4
, POWER GAIN (dB)
ps
G
13.2
V
= 28 Vdc, P
DD
2−Carrier N − CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
= 30 W (Avg.), IDQ = 750 mA
out
η
D
G
ps
IM3
IRL
ACPR
24
23
D
ps
20201900
, DRAIN
D
η
22
−35
−41
−47
IM3 (dBc), ACPR (dBc)
−53
= 12 Watts Avg.
out
39
37
, DRAIN
D
η
35
−25
−31
−37
EFFICIENCY (%)
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
EFFICIENCY (%)
−5
−10
−15
HIVE INF
17
16
AR
15
14
, POWER GAIN (dB)
ps
G
13
12
1
IDQ = 1150 mA
950 mA
750 mA
550 mA
350 mA
Figure 5. Two- Tone Power Gain versus
13
1940 1960
f, FREQUENCY (MHz)
Figure 4. 2- Carrier N- CDMA Broadband Performance @ P
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two− Tone Measurements, 2.5 MHz Tone Spacing
10
P
, OUTPUT POWER (WATTS) PEP
out
100
−15
−20
−25
−30
IDQ = 350 mA
−35
−40
−45
IMD, THIRD ORDER
−50
−55
INTERMODULATION DISTORTION (dBc)
−60
1
Figure 6. Third Order Intermodulation Distortion
Output Power
2000
550 mA
IM3 (dBc), ACPR (dBc)
−43
20201900 19801920
= 30 Watts Avg.
out
1150 mA
P
, OUTPUT POWER (WATTS) PEP
out
−20
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two− Tone Measurements,
2.5 MHz Tone Spacing
950 mA
750 mA
10
versus Output Power
ARCHIVE INFORMATION
100
MRF5S19060MR1 MRF5S19060MBR1
6
RF Device Data
Freescale Semiconductor
Page 7
C
O
O
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
N
RMATI
−10
VDD = 28 Vdc, P
−15
Two− Tone Measurements, Center Frequency = 1960 MHz
−20
−25
3rd Order
−30
−35
−40
5th Order
−45
7th Order
−50
−55
0.1
= 12 W (Avg.), IDQ = 750 mA
out
1 100
TWO−TONE SPACING (MHz)
10
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
40
35 − 20
30
, POWER GAIN (dB)
25
ps
20
15
10
V
= 28 Vdc, IDQ = 750 mA
DD
f1 = 1960 MHz, f2 = 1962.5 MHz
2−Carrier N − CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
5
54
53
52
51
50
49
48
47
, OUTPUT POWER (dBm)
out
46
P
45
44
P3dB = 49.4 dBm (87 W)
P1dB = 48.65 dBm (73.3 W)
VDD = 28 Vdc, IDQ = 750 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 1960 MHz
31
32 3433 35 4239
36 37 38 41 43
Pin, INPUT POWER (dBm)
Ideal
4030
Actual
44
Figure 8. Pulse CW Output Power versus
Input Power
TC = −30_ C
G
ps
85_C
25_C
85_C
85_C
25_C
−30_C
25_C
−30_C
−30_C
25_C
85_C
η
IM3
ACPR
−10
D
−30
−40
−50
−60
IM3, (dBc), ACPR (dBc)
−70
−80
HIVE INF
16
AR
, POWER GAIN (dB)
G
RF Device Data
Freescale Semiconductor
TC = −30_ C
15
14
13
ps
12
11
10
VDD = 28 Vdc
IDQ = 750 mA
f = 1960 MHz
1
25_C
85_C
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
0
, DRAIN EFFICIENCY (%), G
D
η
1 10 100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
25_C
−30_C
85_C
η
D
10
60
50
40
30
20
10
G
ps
0
100
16
15
14
13
12
, POWER GAIN (dB)
ps
G
, DRAIN EFFICIENCY (%)
D
11
η
10
30 9050
Figure 11. Power Gain versus Output Power
−90
VDD = 32 V
28 V
24 V
70
P
, OUTPUT POWER (WATTS) CW
out
IDQ = 750 mA
f = 1960 MHz
MRF5S19060MR1 MRF5S19060MBR1
ARCHIVE INFORMATION
7
Page 8
C
O
O
N
TYPICAL CHARACTERISTICS
9
10
)
2
8
10
7
10
MTTF FACTOR (HOURS X AMPS
6
10
90
100 110 130 150 170 190
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 12. MTTF Factor versus Junction Temperature
120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
2
for MTTF in a particular application.
D
2
210
RMATI
100
10
1
0.1
HIVE INF
PROBABILITY (%)
0.001
0.0001
AR
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
0.01
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0
Figure 13. 2- Carrier CCDF N-CDMA
N- CDMA TEST SIGNAL
2468
PEAK −TO− AVERAGE (dB)
0
−10
−20
−30
−40
−50
(dB)
−60
−70
−80
10
−90
−100
−7.5
−IM3 in
1.2288 MHz
Integrated BW
−ACPR in 30 kHz
Integrated BW
−6
−4.5
Figure 14. 2- Carrier N-CDMA Spectrum
1.2288 MHz
Channel BW
+ACPR in 30 kHz
−3
f, FREQUENCY (MHz)
0−1.5
1.2288 MHz
Integrated BW
Integrated BW
3
1.5 4.5
+IM3 in
ARCHIVE INFORMATION
6
7.5
MRF5S19060MR1 MRF5S19060MBR1
8
RF Device Data
Freescale Semiconductor
Page 9
C
O
O
N
RMATI
Zo = 5 Ω
Z
load
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Z
source
HIVE INF
AR
VDD = 28 Vdc, IDQ = 750 mA, P
f
MHz
1930
1960
1990
Z
= Test circuit impedance as measured from
source
Z
= Test circuit impedance as measured
load
Input
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance
Z
source
Ω
3.11 - j4.55
3.06 - j4.38
2.93 - j4.28
gate to ground.
from drain to ground.
Device
Under
Test
Z
source
= 12 W Avg.
out
2.60 - j3.18
2.50 - j2.85
2.44 - j2.53
Z
load
Z
load
Ω
Output
Matching
Network
ARCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
9
Page 10
NOTES
MRF5S19060MR1 MRF5S19060MBR1
10
RF Device Data
Freescale Semiconductor
Page 11
NOTES
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
11
Page 12
PACKAGE DIMENSIONS
D1
A2
NOTE 7
GATE LEAD
4X
b1
M
aaa C
A1
c1
2X
D2
D3
B
E1
2X
E3
A
DRAIN LEAD
D
4X
e
A
2X
E
DATUM
H
PLANE
F
ZONE J
A
2X
E2
E5
E4
4
SEATING
C
PLANE
PIN 5
NOTE 8
1
23
CASE 1486- 03
E5
BOTTOM VIEW
ISSUE C
TO-270 WB-4
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M− 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H− .
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B − TO BE DETERMINED AT
DATUM PLANE −H −.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIMAMIN MAX MIN MAX
.100 .104 2.54 2.64
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D .712 .720 18.08 18.29
D1 .688 .692 17.48 17.58
D2 .011 .019 0.28 0.48
D3 .600 −− − 15.24 − − −
E .551 .559 14 14.2
E1 .353 .357 8.97 9.07
E2 .132 .140 3.35 3.56
E3 .124 .132 3.15 3.35
E4 .270 − −− 6.86 − − −
E5 .346 .350 8.79 8.89
F
.025 BSC
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28
e
.106 BSC
aaa
.004 0.10
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
0.64 BSC
2.69 BSC
PLASTIC
MRF5S19060MR1
MRF5S19060MR1 MRF5S19060MBR1
12
RF Device Data
Freescale Semiconductor
Page 13
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
13
Page 14
MRF5S19060MR1 MRF5S19060MBR1
14
RF Device Data
Freescale Semiconductor
Page 15
RF Device Data
Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1
15
Page 16
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800- 521 - 6274 or +1 - 480-768- 2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8- 1, Shimo - Meguro, Meguro -ku,
Tokyo 153 -0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800- 441 - 2447 or 303 - 675-2140
Fax: 303-675- 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb - free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS - compliant and/or non-Pb -free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MRF5S19060MR1 MRF5S19060MBR1
Document Number: MRF5S19060M
Rev. 5, 5/2006
16
RF Device Data
Freescale Semiconductor
Loading...