Freescale MRF18090AR3 User Manual

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for GSM and GSM EDGE base station applications withfrequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in C lass AB for GSM and GSM EDGE cellular radio
applications.

! GSM and GSM EDGE Performances @ 1805 MHz

Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW

! Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power

Features

! Internally Matched for Ease of Use
! High Gain, High Efficiency and High Linearity

N

! Integrated ESD Protection
! Designed for Maximum Gain and Insertion Phase Flatness
! Excellent Thermal Stability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Document Number: MRF18090A

Rev . 8, 10/2008

MRF18090AR3

1805-- 1880 MHz, 90 W, 26 V

LATERAL N--CHANNEL

RF POWER MOSFET

CASE 465B--03, STYLE 1

NI--880

RMATI

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

Gate--Source Voltage V

Total Device Dissipation @ TC=25"C

Derate above 25"C

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Storage Temperature Range T

Case Operating Temperature T

Operating Junction Temperature T

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Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case R

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 2 (Minimum)

Machine Model M3 (Minimum)

DSS

GS

P

stg

#

D

C

J

JC

--0.5, +65 Vdc

--0.5, +15 Vdc

-- 65 to +150 "C

250

1.43

150 "C

200 "C

0.7 "C/W

W

W/"C

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$ Freescale Semiconductor, Inc., 2008, 2010.All rights reserved.

RF Device Data
Freescale Semiconductor

MRF18090AR3

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Table 4. Electrical Characteristics

Characteristic

Off Characteristics

Drain--Source Breakdown Voltage

(V

=0Vdc,ID= 100 %Adc)

GS

Zero Gate Voltage Drain Current

(V

=26Vdc,VGS=0Vdc)

DS

Gate--Source Leakage Current

(V

=5Vdc,VDS=0Vdc)

GS

On Characteristics

Gate Quiescent Voltage

(V

=26Vdc,ID= 750 mAdc)

DS

Drain--Source On--Voltage

(V

=10Vdc,ID=1Adc)

GS

N

Forward Transconductance

(V

=10Vdc,ID=3Adc)

DS

Dynamic Characteristics

Reverse Transfer Capacitance

(V

=26Vdc& 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)

DS

Functional Tests (In Freescale Test Fixture)

Common--Source Amplifier Power Gain @ 90 W

(V

=26Vdc,IDQ= 750 mA, f = 1805 MHz)

DD

RMATI

Drain Efficiency @ 90 W

(V

=26Vdc,IDQ= 750 mA, f = 1805 MHz)

DD

Input Return Loss

(V

=26Vdc,P

DD

=90WCW,IDQ= 750 mA, f = 1805 MHz)

out

(TC=25"C unless otherwise noted)

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(on)

g

fs

C

rss

G

ps

' 47 52 — %

IRL — — -- 1 0 dB

65 — — Vdc

— — 10 %Adc

— — 1 %Adc

2.5 3.7 4.5 Vdc

— 0.1 — Vdc

— 7.2 — S

— 4.2 — pF

12.0 13.5 — dB

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MRF18090AR3

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RF Device Data

Freescale Semiconductor

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V

V

BIAS

INPUT

RF

R1

+

C1

R2

Z1

Z2

C2

R3

Z3

Z4

Z5

Z10

Z6

C5

Z7 Z8

C6

C7

+

Z9

SUPPLY

C8

RF

OUTPUT

N

RMATI

V

C4

C1 10 mF, 35 V Tantalum Capacitor
C2, C3 10 pF, 100B Chip Capacitors
C4 3.3 pF, 100B Chip Capacitor
C5, C6 6.8 pF, 100B Chip Capacitors
C7 12 pF, 100B Chip Capacitor
C8 220 mF, 63 V Electrolytic Capacitor
R1, R2 10 kΩ, 1/8 W Chip Resistors (0805)
R3 1.0 kΩ, 1/8 W Chip Resistor (0805)
Z1 0.697( x 0.087( Microstrip
Z2 0.087( x 0.197( Microstrip

Figure 1. MRF18090A 1805 -- 1880 MHz Test Fixture Schematic

C1

BIAS

R2

R1

C3

C2

R3

DUT

Z3 0.819( x 0.087( Microstrip
Z4 0.181( x 0.144( Microstrip
Z5 0.383( x 1.148( Microstrip
Z6 0.400( x 1.380( Microstrip
Z7 0.351( x 0.351( Microstrip
Z8 0.126( x 0.087( Microstrip
Z9 1.280( x 0.087( Microstrip
Z10 )1.275( x 0.055( Microstrip
PCB Taconic TLX8--0300, 0.030(, *

C6

C5

C8

=2.55

r

V

SUPPLY

HIVE INF

C4

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Ground
(bias)

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semicon­ductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period.
These changes will have no impact on form, fit or function of the current product.

RF Device Data
Freescale Semiconductor

MRF18090A
Rev 4

Figure 2. MRF18090A 1805 -- 1880 MHz Test Fixture Component Layout

C3

CUT OUT AREA

C7

Ground
(supply)

MRF18090AR3

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T1

C1

T1

R1

R2

R6

C2

R5

C5

V

+

SUPPLY

N

RMATI

R3

R4

C3

T2

C4

RF

INPUT

C1, C3 1 mF Chip Capacitors (0805)
C2 0.1 mF Chip Capacitor (0805)
C4 1 nF Chip Capacitor (0805)
C5 220 mF, 50 V Electrolytic Capacitor
C6, C7 8.2 pF, 100A Chip Capacitors
C8, C9, C10 22 pF, 100A Chip Capacitors
R1 10 + Chip Resistor (0805)
R2, R3 1 k+ Chip Resistors (0805)
R4 2.2 k+ Chip Resistor (0805)

Figure 3. 1805 -- 1880 MHz Demo Board Schematic

Z1

C8

Z2

C6

C7

C9

Z3

C10

R5 10 k+ Chip Resistor (0603)
R6 5 k+, SMD Potentiometer
T1 LP2951 Micro--8 Voltage Regulator
T2 BC847 SOT--23 NPN Transistor
Z1 0.210( x 0.055( Microstrip
Z2 0.419( x 0.787( Microstrip
Z3 0.836( x 0.512( Microstrip
Z4 0.164( x 0.055( Microstrip
Substrate = 0.5 mm Teflon

,

Glass

RF

OUTPUT

Z4

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V Ground

SUPPLY

R6

T1

C4

C2

R5
C3

MRF18090A

C5

C6
C7

MRF18090A

C9

C10

C1R2R1

R3

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.

Figure 4. 1805 -- 1880 MHz Demo Board Component Layout

R4

T2

C8

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MRF18090AR3

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RF Device Data

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TYPICAL CHARACTERISTICS

N

RMATI

16

IDQ= 1000 mA

750 mA

500 mA

300 mA

VDD=26Vdc
f = 1880 MHz

1.0 18 321614

P

, OUTPUT POWER (WATTS)

out

Figure 5. Power Gain versus

Output Power

Pin=3.65W

2W

1W

0

1.795 0

1.835 345

f, FREQUENCY (GHz)

10

VDD=26Vdc
I

= 750 mA

DQ

1.855 1.875

100 3022

1.895

, POWER GAIN (dB)

ps

G

100

out

P , OUTPUT POWER (WATTS)

15

14

13

12

11

10

90

80

70

60

50

40

30

20

10

120

100

out

P , OUTPUT POWER (WATTS)

120

IDQ= 750 mA

100

f = 1880 MHz

80

60

40

, OUTPUT POWER (WATTS)

out

P

20

0

120.1
V

DD

Figure 6. Output Power versus Supply Voltage

η

80

60

40

20

0

1

Pin, INPUT POWER (WATTS)

Pin=3.65W

2W

1W

, SUPPLY VOLTAGE (VOLTS)

P

out

VDD=26Vdc
I

= 750 mA

DQ

f = 1880 MHz

21.815

2820 24

26

60

50

40

30

20

, DRAIN EFFICIENCY (%)'

10

0

Figure 7. Output Power versus Frequency

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RF Device Data
Freescale Semiconductor

Figure 8. Output Power and Efficiency

versus Input Power

15

G

ps

12

, POWER GAIN (dB)

9

ps

G

6

1.75

VDD=26Vdc
I

= 750 mA

DQ

f, FREQUENCY (GHz)

Figure 9. Wideband Gain and IRL

(at Small Signal)

IRL

0

-- 5

-- 1 0

-- 1 5

-- 2 0

IRL, INPUT RETURN LOSS (dB)

-- 2 5

-- 3 0

1.951.851.80 1.90

MRF18090AR3

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N

f = 1805 MHz

f = 1990 MHz

Z

load

Zo=10+

f = 1990 MHz

RMATI

HIVE INF

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f = 1805 MHz

VDD=26V,IDQ= 750 mA, P

f

MHz

1805

1880

1930

1990 2.30 -- j7.30 0.82 -- j2.90

Z

= Test circuit impedance as measured from

source

Z

load

Input
Matching
Network

gate to ground.

= Test circuit impedance as measured

from drain to ground.

Z

source

Z

source

+

1.10 -- j5.85

1.56 -- j6.75

2.05 -- j8.00

Device
Under T est

= 90 Watts (CW)

out

1.15 -- j2.16

1.13 -- j2.60

1.30 -- j2.23

Z

load

+

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Output
Matching
Network

MRF18090AR3

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Z

source

Figure 10. Large Signal Source and Load Impedance

Z

load

RF Device Data

Freescale Semiconductor

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PACKAGE DIMENSIONS

N

RMATI

B

B

(FLANGE)

K

bbb B

bbb B

ccc B

H

E

AA

G

D

M

T

M

T

M

T

(FLANGE)

4

1

2

A

A

A

NOTES:

2X

Q

M

bbb B

3

M

M

(INSULATOR)

M

M

M

(LID)

N

M

M

C

SEATING

T

PLANE

M

A

T

M

ccc B

M

aaa B

M

(LID)

R

M

S

M

M

(INSULATOR)

M

F

A

T

A

T

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENS ION H IS MEASURED 0.030 (0.762) AWA Y
FROM PACKAGE BODY.

4. RECOMMENDED BOLT CENTER DIMENSION OF

1.16 (29.57) BASED ON M3 SCREW.

DIM MIN MAX MIN MAX

A 1.335 1.345 33.91 34.16
B 0.535 0.545 13.6 13.8
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.175 0.205 4.44 5.21
M 0.872 0.888 22.15 22.55
N 0.871 0.889 19.30 22.60
Q .118 .138 3.00 3.51
R 0.515 0.525 13.10 13.30

S 0.515 0.525 13.10 13.30
aaa 0.007 REF 0.178 R EF
bbb 0.010 RE F 0.254 REF
ccc 0.015 REF 0.381 R EF

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

MILLIMETERSINCHES

CASE 465B--03

ISSUE D

NI--880

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RF Device Data
Freescale Semiconductor

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MRF18090AR3

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PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Engineering Bulletins

! EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

8

Oct. 2008 ! Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN12779, p. 1, 2

! Added Product Documentation and Revision History, p. 8

N

RMATI

HIVE INF

Dec. 2010 ! Data sheet archived. Part no longer manufactured.

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MRF18090AR3

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RF Device Data

Freescale Semiconductor

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How to Reach Us:

Home Page:

www.freescale.com

Web Support:

http://www.freescale.com/support

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USA/Europe or Locations Not Listed:

Freescale Semiconductor, Inc.
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RMATI

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- Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.

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Document Number: MRF18090A

RF Device Data

Rev. 8, 10/2008

Freescale Semiconductor

MRF18090AR3

9