Freescale MRF18090AR3 User Manual
C
O
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for GSM and GSM EDGE base station applications withfrequencies
from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in C lass AB for GSM and GSM EDGE cellular radio
applications.
! GSM and GSM EDGE Performances @ 1805 MHz
Power Gain — 13.5 dB (Typ) @ 90 Watts CW
Efficiency — 52% (Typ) @ 90 Watts CW
! Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
! Internally Matched for Ease of Use
! High Gain, High Efficiency and High Linearity
N
! Integrated ESD Protection
! Designed for Maximum Gain and Insertion Phase Flatness
! Excellent Thermal Stability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18090A
Rev . 8, 10/2008
MRF18090AR3
1805-- 1880 MHz, 90 W, 26 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465B--03, STYLE 1
NI--880
RMATI
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
Gate--Source Voltage V
Total Device Dissipation @ TC=25"C
Derate above 25"C
HIVE INF
Storage Temperature Range T
Case Operating Temperature T
Operating Junction Temperature T
AR
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
DSS
GS
P
stg
#
D
C
J
JC
--0.5, +65 Vdc
--0.5, +15 Vdc
-- 65 to +150 "C
250
1.43
150 "C
200 "C
0.7 "C/W
W
W/"C
RCHIVE INFORMATION
$ Freescale Semiconductor, Inc., 2008, 2010.All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18090AR3
1
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Table 4. Electrical Characteristics
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(V
=0Vdc,ID= 100 %Adc)
GS
Zero Gate Voltage Drain Current
(V
=26Vdc,VGS=0Vdc)
DS
Gate--Source Leakage Current
(V
=5Vdc,VDS=0Vdc)
GS
On Characteristics
Gate Quiescent Voltage
(V
=26Vdc,ID= 750 mAdc)
DS
Drain--Source On--Voltage
(V
=10Vdc,ID=1Adc)
GS
N
Forward Transconductance
(V
=10Vdc,ID=3Adc)
DS
Dynamic Characteristics
Reverse Transfer Capacitance
(V
=26Vdc& 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)
DS
Functional Tests (In Freescale Test Fixture)
Common--Source Amplifier Power Gain @ 90 W
(V
=26Vdc,IDQ= 750 mA, f = 1805 MHz)
DD
RMATI
Drain Efficiency @ 90 W
(V
=26Vdc,IDQ= 750 mA, f = 1805 MHz)
DD
Input Return Loss
(V
=26Vdc,P
DD
=90WCW,IDQ= 750 mA, f = 1805 MHz)
out
(TC=25"C unless otherwise noted)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(on)
g
fs
C
rss
G
ps
' 47 52 — %
IRL — — -- 1 0 dB
65 — — Vdc
— — 10 %Adc
— — 1 %Adc
2.5 3.7 4.5 Vdc
— 0.1 — Vdc
— 7.2 — S
— 4.2 — pF
12.0 13.5 — dB
HIVE INF
AR
MRF18090AR3
2
RCHIVE INFORMATION
RF Device Data
Freescale Semiconductor
C
O
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V
V
BIAS
INPUT
RF
R1
+
C1
R2
Z1
Z2
C2
R3
Z3
Z4
Z5
Z10
Z6
C5
Z7 Z8
C6
C7
+
Z9
SUPPLY
C8
RF
OUTPUT
N
RMATI
V
C4
C1 10 mF, 35 V Tantalum Capacitor
C2, C3 10 pF, 100B Chip Capacitors
C4 3.3 pF, 100B Chip Capacitor
C5, C6 6.8 pF, 100B Chip Capacitors
C7 12 pF, 100B Chip Capacitor
C8 220 mF, 63 V Electrolytic Capacitor
R1, R2 10 kΩ, 1/8 W Chip Resistors (0805)
R3 1.0 kΩ, 1/8 W Chip Resistor (0805)
Z1 0.697( x 0.087( Microstrip
Z2 0.087( x 0.197( Microstrip
Figure 1. MRF18090A 1805 -- 1880 MHz Test Fixture Schematic
C1
BIAS
R2
R1
C3
C2
R3
DUT
Z3 0.819( x 0.087( Microstrip
Z4 0.181( x 0.144( Microstrip
Z5 0.383( x 1.148( Microstrip
Z6 0.400( x 1.380( Microstrip
Z7 0.351( x 0.351( Microstrip
Z8 0.126( x 0.087( Microstrip
Z9 1.280( x 0.087( Microstrip
Z10 )1.275( x 0.055( Microstrip
PCB Taconic TLX8--0300, 0.030(, *
C6
C5
C8
=2.55
r
V
SUPPLY
HIVE INF
C4
AR
Ground
(bias)
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period.
These changes will have no impact on form, fit or function of the current product.
RF Device Data
Freescale Semiconductor
MRF18090A
Rev 4
Figure 2. MRF18090A 1805 -- 1880 MHz Test Fixture Component Layout
C3
CUT OUT AREA
C7
Ground
(supply)
MRF18090AR3
RCHIVE INFORMATION
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