Freescale MRF 1517 NT 1 Service Manual

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Document Number: MRF1517N

Rev. 5, 9/2006

Designed for broadband commercial and industrial applications at frequen-

MRF1517NT1

cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55%

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

520 MHz, 8 W, 7.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

• Excellent Thermal Stability

• Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• Available in Tape and Reel.

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage V

Drain Current — Continuous I

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

(1)

(2)

DSS

stg

-0.5, +25 Vdc

± 20 Vdc

4 Adc

62.5

0.50

- 65 to +150 °C

150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case R

(3)

2 °C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J- STD -020 1 260 °C

1. Not designed for 12.5 volt applications. TJ–T

2. Calculated based on the formula PD =

3. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

θJC

W/°C

Unit

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 2

Table 4. Electrical Characteristics

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 35 Vdc, VGS = 0)

Gate-Source Leakage Current

(VGS = 10 Vdc, VDS = 0)

On Characteristics

Gate Threshold Voltage

(VDS = 7.5 Vdc, ID = 120 µAdc)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 520 MHz)

out

Drain Efficiency

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 520 MHz)

out

GS(th)

DS(on)

DSS

GSS

iss

oss

rss

— — 1 µAdc

1 1.7 2.1 Vdc

— 0.5 — Vdc

— 0.9 — S

— 66 — pF

— 38 — pF

— 6 — pF

— 14 — dB

η — 70 — %

MRF1517NT1

RF Device Data

Freescale Semiconductor

Page 3

C18

C15

C16C17

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1 300 pF, 100 mil Chip Capacitor C2, C3, C4, C10, C12, C13 0 to 20 pF, Trimmer Capacitor C5, C11 43 pF, 100 mil Chip Capacitor C6, C18 120 pF, 100 mil Chip Capacitor C7, C15 10 µF, 50 V Electrolytic Capacitor C8, C16 0.1 µF, 100 mil Chip Capacitor C9, C17 1,000 pF, 100 mil Chip Capacitor C14 330 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount

Z2 Z3

(2743021446)

Z4 Z5

Figure 1. 480 - 520 MHz Broadband Test Circuit

DUT

Z9 Z10

C10

C11

R1 15 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 33 kΩ, 1/2 W Resistor Z1 0.315″ x 0.080″ Microstrip Z2 1.415″ x 0.080″ Microstrip Z3 0.322″ x 0.080″ Microstrip Z4 0.022″ x 0.080″ Microstrip Z5, Z6 0.260″ x 0.223″ Microstrip Z7 0.050″ x 0.080″ Microstrip Z8 0.625″ x 0.080″ Microstrip Z9 0.800″ x 0.080″ Microstrip Z10 0.589″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

C12

C13

C14

RF OUTPUT

TYPICAL CHARACTERISTICS, 480 - 520 MHz

, OUTPUT POWER (WATTS)

out

Figure 2. Output Power versus Input Power

500 MHz

480 MHz

0.6 1.00.4

Pin, INPUT POWER (WATTS)

520 MHz

−5

−10

−15

−20

IRL, INPUT RETURN LOSS (dB)

VDD = 7.5 Vdc VDD = 7.5 Vdc

0.80.2

−25

520 MHz

480 MHz

546879

, OUTPUT POWER (WATTS)

out

500 MHz

Figure 3. Input Return Loss versus

Output Power

101

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 4

TYPICAL CHARACTERISTICS, 480 - 520 MHz

GAIN (dB)

, OUTPUT POWER (WATTS)

out

500 MHz

out

480 MHz

520 MHz

VDD = 7.5 Vdc VDD = 7.5 Vdc

56479108

, OUTPUT POWER (WATTS)

Figure 4. Gain versus Output Power

500 MHz

520 MHz

480 MHz

Pin = 27 dBm

VDD = 7.5 Vdc

Eff, DRAIN EFFICIENCY (%)

480 MHz

520 MHz

, OUTPUT POWER (WATTS)

out

500 MHz

68791011

Figure 5. Drain Efficiency versus Output Power

480 MHz

500 MHz

520 MHz

Pin = 27 dBm

VDD = 7.5 Vdc

Eff, DRAIN EFFICIENCY (%)

200 1000400 600

IDQ, BIASING CURRENT (mA)

Figure 6. Output Power versus Biasing Current

500 MHz

520 MHz

480 MHz

69107

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 27 dBm

IDQ = 150 mA

, OUTPUT POWER (WATTS)

out

Figure 8. Output Power versus Supply Voltage

800

200

4000

IDQ, BIASING CURRENT (mA)

600 1000

800

Figure 7. Drain Efficiency versus Biasing Current

480 MHz

Pin = 27 dBm

IDQ = 150 mA

Eff, DRAIN EFFICIENCY (%)

500 MHz

520 MHz

678 10

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 9. Drain Efficiency versus Supply Voltage

MRF1517NT1

RF Device Data

Freescale Semiconductor

Page 5

C17

C14

C15C16

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1, C13 300 pF, 100 mil Chip Capacitor C2, C3, C4, C10, C11, C12 0 to 20 pF, Trimmer Capacitor C5, C17 130 pF, 100 mil Chip Capacitor C6, C14 10 µF, 50 V Electrolytic Capacitor C7, C15 0.1 µF, 100 mil Chip Capacitor C8, C16 1,000 pF, 100 mil Chip Capacitor C9 33 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount

(2743021446)

Z2 Z3

Figure 10. 400 - 440 MHz Broadband Test Circuit

DUT

Z6 Z8 Z9

C13

C10

R1 12 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 33 kΩ, 1/2 W Resistor Z1 0.617″ x 0.080″ Microstrip Z2 0.723″ x 0.080″ Microstrip Z3 0.513″ x 0.080″ Microstrip Z4, Z5 0.260″ x 0.223″ Microstrip Z6 0.048″ x 0.080″ Microstrip Z7 0.577″ x 0.080″ Microstrip Z8 1.135″ x 0.080″ Microstrip Z9 0.076″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

C11

C12

RF OUTPUT

, OUTPUT POWER (WATTS)

out

TYPICAL CHARACTERISTICS, 400 - 440 MHz

420 MHz

Figure 11. Output Power versus Input Power

400 MHz

440 MHz

VDD = 7.5 Vdc VDD = 7.5 Vdc

0.3 0.50.2

Pin, INPUT POWER (WATTS)

−5

−10

−15

−20

IRL, INPUT RETURN LOSS (dB)

0.40.1

−25 21

, OUTPUT POWER (WATTS)

out

400 MHz

420 MHz

440 MHz

689710

Figure 12. Input Return Loss versus Output Power

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 6

TYPICAL CHARACTERISTICS, 400 - 440 MHz

GAIN (dB)

, OUTPUT POWER (WATTS)

out

420 MHz

400 MHz

4679810

, OUTPUT POWER (WATTS)

out

440 MHz

VDD = 7.5 Vdc

Figure 13. Gain versus Output Power

400 MHz

440 MHz

Pin = 25.5 dBm

VDD = 7.5 Vdc

200 1000400 600

IDQ, BIASING CURRENT (mA)

800

420 MHz

Eff, DRAIN EFFICIENCY (%)

400 MHz

, OUTPUT POWER (WATTS)

out

440 MHz

VDD = 7.5 Vdc

68791011

Figure 14. Drain Efficiency versus Output Power

440 MHz

Eff, DRAIN EFFICIENCY (%)

200

IDQ, BIASING CURRENT (mA)

400 MHz

4000

420 MHz

Pin = 25.5 dBm

VDD = 7.5 Vdc

600 1000

800

420 MHz

Figure 15. Output Power versus Biasing Current

, OUTPUT POWER (WATTS)

out

400 MHz

69107

VDD, SUPPLY VOLTAGE (VOLTS)

420 MHz

440 MHz

Pin = 25.5 dBm

IDQ = 150 mA

Figure 17. Output Power versus Supply Voltage

MRF1517NT1

Figure 16. Drain Efficiency versus Biasing Current

420 MHz

440 MHz

400 MHz

Pin = 25.5 dBm

IDQ = 150 mA

Eff, DRAIN EFFICIENCY (%)

67 8 10

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 18. Drain Efficiency versus Supply Voltage

RF Device Data

Freescale Semiconductor

Page 7

C17

C14

C15C16

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1 240 pF, 100 mil Chip Capacitor C2, C3, C4, C10, C11, C12 0 to 20 pF, Trimmer Capacitor C5, C17 130 pF, 100 mil Chip Capacitor C6, C14 10 mF, 50 V Electrolytic Capacitor C7, C15 0.1 mF, 100 mil Chip Capacitor C8, C16 1,000 pF, 100 mil Chip Capacitor C9 39 pF, 100 mil Chip Capacitor C13 330 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount

(2743021446)

Z2 Z3

Figure 19. 440 - 480 MHz Broadband Test Circuit

DUT

C13

RF OUTPUT

Z8 Z9

C10

R1 15 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 33 kΩ, 1/2 W Resistor Z1 0.471″ x 0.080″ Microstrip Z2 1.082″ x 0.080″ Microstrip Z3 0.372″ x 0.080″ Microstrip Z4, Z5 0.260″ x 0.223″ Microstrip Z6 0.050″ x 0.080″ Microstrip Z7 0.551″ x 0.080″ Microstrip Z8 0.825″ x 0.080″ Microstrip Z9 0.489″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

C11

C12

, OUTPUT POWER (WATTS)

out

TYPICAL CHARACTERISTICS, 440 - 480 MHz

0.0

Figure 20. Output Power versus Input Power

440 MHz

460 MHz

480 MHz

VDD = 7.5 Vdc VDD = 7.5 Vdc

0.4

Pin, INPUT POWER (WATTS)

0.6

−5

−10

−15

−20

IRL, INPUT RETURN LOSS (dB)

0.80.2

−25 21

460 MHz

440 MHz

480 MHz

46 978 10

, OUTPUT POWER (WATTS)

out

Figure 21. Input Return Loss versus Output Power

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 8

TYPICAL CHARACTERISTICS, 440 - 480 MHz

GAIN (dB)

, OUTPUT POWER (WATTS)

out

440 MHz

460 MHz

480 MHz

VDD = 7.5 Vdc

, OUTPUT POWER (WATTS)

out

687910

Figure 22. Gain versus Output Power

440 MHz

480 MHz

460 MHz

Pin = 27.5 dBm

200 1000400 600

IDQ, BIASING CURRENT (mA)

800

Eff, DRAIN EFFICIENCY (%)

480 MHz

, OUTPUT POWER (WATTS)

out

440 MHz

68791011

460 MHz

VDD = 7.5 Vdc

Figure 23. Drain Efficiency versus Output Power

480 MHz

Eff, DRAIN EFFICIENCY (%)

200

460 MHz

440 MHz

Pin = 27.5 dBm

4000

IDQ, BIASING CURRENT (mA)

600 1000

800

Figure 24. Output Power versus Biasing Current

440 MHz

480 MHz

69107

VDD, SUPPLY VOLTAGE (VOLTS)

460 MHz

Pin = 27.5 dBm Pin = 27.5 dBm

, OUTPUT POWER (WATTS)

out

Figure 26. Output Power versus Supply Voltage

MRF1517NT1

Figure 25. Drain Efficiency versus Biasing Current

480 MHz

Eff, DRAIN EFFICIENCY (%)

460 MHz

440 MHz

678 10

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 27. Drain Efficiency versus Supply Voltage

RF Device Data

Freescale Semiconductor

Page 9

TYPICAL CHARACTERISTICS

)

MTTF FACTOR (HOURS X AMPS

90 110 130 150 170 190100 120 140 160 180 200

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I

Figure 28. MTTF Factor versus Junction Temperature

for MTTF in a particular application.

210

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 10

520

f = 480 MHz

520

ZOL*

f = 480 MHz

Zo = 10 Ω

f = 440 MHz

f = 480 MHz

480

ZOL*

Zo = 10 Ω

440

f = 440 MHz

400

f = 440 MHz

ZOL*

400

Zo = 10 Ω

VDD = 7.5 V, IDQ = 150 mA, P

MHz

Ω

out

= 8 W

ZOL*

Ω

480 1.06 +j1.82 3.51 +j0.99

500 0.97 +j2.01 2.82 +j0.75

520 0.975 +j2.37 1.87 +j1.03

Zin= Complex conjugate of source

impedance.

ZOL* = Complex conjugate of the load

impedance at given output power, voltage, frequency, and ηD > 50 %.

Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.

VDD = 7.5 V, IDQ = 150 mA, P

MHz

Ω

out

440 1.62 +j3.41 3.25 +j0.98

460 1.85 +j3.35 3.05 +j0.93

480 1.91 +j3.31 2.54 +j0.84

Zin= Complex conjugate of source

impedance.

ZOL* = Complex conjugate of the load

impedance at given output power, voltage, frequency, and ηD > 50 %.

Input Matching

Device Under Test

Network

= 8 W

ZOL*

Ω

VDD = 7.5 V, IDQ = 150 mA, P

MHz

Ω

400 1.96 +j3.32 2.52 +j0.39

420 2.31 +j3.56 2.61 +j0.64

440 1.60 +j3.45 2.37 +j1.04

Zin= Complex conjugate of source

impedance.

ZOL* = Complex conjugate of the load

impedance at given output power, voltage, frequency, and ηD > 50 %.

Output Matching Network

out

= 8 W

ZOL*

Ω

MRF1517NT1

ZOL*

Figure 29. Series Equivalent Input and Output Impedance

RF Device Data

Freescale Semiconductor

Page 11

Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)

IDQ = 150 mA

MHz

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

50 0.84 - 152 17.66 97 0.016 0 0.77 - 167

100 0.84 -164 8.86 85 0.016 5 0.78 -172

200 0.86 -170 4.17 72 0.015 -5 0.79 - 173

300 0.88 -171 2.54 62 0.014 -8 0.80 - 172

400 0.90 -172 1.72 55 0.013 -25 0.83 - 172

500 0.92 -172 1.28 50 0.013 -10 0.84 - 172

600 0.94 -173 0.98 46 0.014 -22 0.86 - 171

700 0.95 -173 0.76 41 0.010 -30 0.86 - 172

800 0.96 -174 0.61 38 0.011 -14 0.86 - 171

900 0.96 -175 0.50 33 0.011 -31 0.85 - 172

1000 0.97 - 175 0.40 31 0.006 55 0.88 -171

IDQ = 800 mA

MHz

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

50 0.90 - 165 20.42 94 0.018 1 0.76 - 164

100 0.89 -172 10.20 87 0.015 -7 0.77 - 170

200 0.90 -175 4.96 79 0.015 -12 0.77 - 172

300 0.90 -176 3.17 73 0.017 -2 0.80 - 171

400 0.91 -176 2.26 67 0.013 1 0.82 -172

500 0.92 -176 1.75 63 0.011 -6 0.83 - 171

600 0.93 -176 1.39 59 0.012 -31 0.85 - 171

700 0.94 -176 1.14 55 0.015 -34 0.88 - 171

800 0.94 -176 0.93 51 0.008 -22 0.87 - 171

900 0.95 -177 0.78 45 0.007 2 0.87 -172

1000 0.96 - 177 0.65 43 0.008 -40 0.90 - 170

IDQ = 1.5 A

MHz

|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ

50 0.92 - 165 19.90 95 0.017 3 0.76 - 164

100 0.90 -172 9.93 88 0.018 2 0.77 -170

200 0.91 -176 4.84 80 0.016 -4 0.77 - 172

300 0.91 -176 3.10 74 0.014 -11 0.80 - 172

400 0.92 -176 2.22 68 0.014 -14 0.81 - 172

500 0.93 -176 1.73 64 0.016 -8 0.83 - 171

600 0.94 -176 1.39 61 0.013 -24 0.85 - 171

700 0.94 -176 1.12 56 0.013 -24 0.87 - 171

800 0.95 -176 0.93 52 0.009 -12 0.87 - 171

900 0.96 -177 0.78 46 0.008 10 0.87 - 173

1000 0.97 - 177 0.64 44 0.012 4 0.89 - 169

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 12

APPLICATIONS INFORMATION

DESIGN CONSIDERATIONS

This device is a common - source, RF power, N- Channel

enhancement mode, Lateral M

ield-Effect Transistor (MOSFET). Freescale Application

F Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs.

This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device.

The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to -drain (C gate - to - source (C

). The PN junction formed during fab-

rication of the RF MOSFET results in a junction capacitance from drain- to - source (C terized as input (C (C

) capacitances on data sheets. The relationships be-

rss

), output (C

iss

tween the inter-terminal capacitances and those given on data sheets are shown below. The C two ways:

1. Drain shorted to source and positive voltage at the gate.

2. Positive voltage of the drain in respect to source and zero volts at the gate.

In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

Gate

DRAIN CHARACTERISTICS

One critical figure of merit for a FET is its static resistance in the full-on condition. This on - resistance, R in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The

etal- Oxide Semiconductor

), and

). These capacitances are charac-

) and reverse transfer

oss

can be specified in

iss

Drain

= Cgd + C

Source

iss

oss

rss

= C

DS(on)

+ C

, occurs

drain- source voltage under these conditions is termed V

. For MOSFETs, V

DS(on)

has a positive temperature

DS(on)

coefficient at high temperatures because it contributes to the power dissipation within the device.

values for this device are higher than normally re-

DSS

quired for typical applications. Measurement of BV

DSS

is not recommended and may result in possible damage to the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 10

Ω

— resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage to the gate greater than the gate- to - source threshold voltage, V

GS(th)

Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region.

Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn- on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal monolithic zener diode from gate - to -source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to -source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate- drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate- threshold voltage and turn the device on.

DC BIAS

Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (I This device was characterized at I

), whose value is application dependent.

= 150 mA, which is the

suggested value of bias current for typical applications. For special applications such as linear amplification, I

may

have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system.

GAIN CONTROL

Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line.

MRF1517NT1

RF Device Data

Freescale Semiconductor

Page 13

MOUNTING

The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD- 1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information.

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.”

Large - signal impedances are provided, and will yield a good first pass approximation.

Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.

Two- port stability analysis with this device’s S- parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two- Port Parameters” for a discussion of two port network theory and stability.

RF Device Data Freescale Semiconductor

MRF1517NT1

Page 14

PACKAGE DIMENSIONS

ZONE V

ZONE W

0.095

2.41

0.146

3.71

0.115

2.92

0.115

2.92

0.020

0.35 (0.89) X 45 5

ZONE X

VIEW Y- Y

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984.

2. CONTROLLING DIMENSION: INCH

3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X.

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

4. SOURCE

CASE 466- 03

ISSUE D PLD- 1.5

10 DRAFT

SOLDER FOOTPRINT

DIM MIN MAX MIN MAX

A 0.255 0.265 6.48 6.73 B 0.225 0.235 5.72 5.97 C 0.065 0.072 1.65 1.83 D 0.130 0.150 3.30 3.81 E 0.021 0.026 0.53 0.66 F 0.026 0.044 0.66 1.12 G 0.050 0.070 1.27 1.78 H 0.045 0.063 1.14 1.60 J 0.160 0.180 4.06 4.57 K 0.273 0.285 6.93 7.24 L 0.245 0.255 6.22 6.48 N 0.230 0.240 5.84 6.10 P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 R 0.200 0.210 5.08 5.33 S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31

ZONE V 0.000 0.021 0.00 0.53

ZONE W 0.000 0.010 0.00 0.25

ZONE X 0.000 0.010 0.00 0.25

0.51

inches

MILLIMETERSINCHES

PLASTIC

MRF1517NT1

RF Device Data

Freescale Semiconductor

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Document Number: MRF1517N

RF Device Data

Rev. 5, 9/2006

Freescale Semiconductor

MRF1517NT1