Freescale MRF 1517 NT 1 Service Manual

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Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Document Number: MRF1517N

Rev. 5, 9/2006

Designed for broadband commercial and industrial applications at frequen-

MRF1517NT1

cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

D

Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55%

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

G

520 MHz, 8 W, 7.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

• Excellent Thermal Stability

• Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

S

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• Available in Tape and Reel.

T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage V

Drain Current — Continuous I

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

(1)

(2)

V

DSS

GS

D

P

D

stg

J

-0.5, +25 Vdc

± 20 Vdc

4 Adc

62.5

0.50

- 65 to +150 °C

150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case R

θ

JC

(3)

2 °C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J- STD -020 1 260 °C

1. Not designed for 12.5 volt applications. TJ–T

2. Calculated based on the formula PD =

3. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

R

C

θJC

W

W/°C

Unit

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

RF Device Data Freescale Semiconductor

MRF1517NT1

1

Table 4. Electrical Characteristics

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 35 Vdc, VGS = 0)

Gate-Source Leakage Current

(VGS = 10 Vdc, VDS = 0)

On Characteristics

Gate Threshold Voltage

(VDS = 7.5 Vdc, ID = 120 µAdc)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 520 MHz)

out

Drain Efficiency

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 520 MHz)

out

I

V

GS(th)

V

DS(on)

C

G

DSS

GSS

g

fs

iss

oss

rss

ps

— — 1 µAdc

1 1.7 2.1 Vdc

— 0.5 — Vdc

— 0.9 — S

— 66 — pF

— 38 — pF

— 6 — pF

— 14 — dB

η — 70 — %

MRF1517NT1

2

RF Device Data

Freescale Semiconductor

V

GG

C9

C8

+

C7

R3

B1

R2

C18

B2

V

DD

+

C15

C16C17

R1

N1

RF

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1 300 pF, 100 mil Chip Capacitor C2, C3, C4, C10, C12, C13 0 to 20 pF, Trimmer Capacitor C5, C11 43 pF, 100 mil Chip Capacitor C6, C18 120 pF, 100 mil Chip Capacitor C7, C15 10 µF, 50 V Electrolytic Capacitor C8, C16 0.1 µF, 100 mil Chip Capacitor C9, C17 1,000 pF, 100 mil Chip Capacitor C14 330 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount

C1

Z2 Z3

Z1

C2

(2743021446)

C3

Z4 Z5

C4

C5

Figure 1. 480 - 520 MHz Broadband Test Circuit

DUT

C6

Z6

L1

Z7

Z8

Z9 Z10

C10

C11

R1 15 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 33 kΩ, 1/2 W Resistor Z1 0.315″ x 0.080″ Microstrip Z2 1.415″ x 0.080″ Microstrip Z3 0.322″ x 0.080″ Microstrip Z4 0.022″ x 0.080″ Microstrip Z5, Z6 0.260″ x 0.223″ Microstrip Z7 0.050″ x 0.080″ Microstrip Z8 0.625″ x 0.080″ Microstrip Z9 0.800″ x 0.080″ Microstrip Z10 0.589″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

C12

C13

N2

C14

RF OUTPUT

TYPICAL CHARACTERISTICS, 480 - 520 MHz

10

8

6

4

, OUTPUT POWER (WATTS)

out

2

P

0

Figure 2. Output Power versus Input Power

500 MHz

480 MHz

0.6 1.00.4

Pin, INPUT POWER (WATTS)

0

520 MHz

−5

−10

−15

−20

IRL, INPUT RETURN LOSS (dB)

VDD = 7.5 Vdc VDD = 7.5 Vdc

0.80.2

−25

520 MHz

2

480 MHz

3

P

546879

, OUTPUT POWER (WATTS)

out

500 MHz

Figure 3. Input Return Loss versus

Output Power

101

RF Device Data Freescale Semiconductor

MRF1517NT1

3

TYPICAL CHARACTERISTICS, 480 - 520 MHz

18

16

14

12

GAIN (dB)

10

8

6

12

10

8

6

4

, OUTPUT POWER (WATTS)

out

P

2

500 MHz

2

31

P

out

480 MHz

520 MHz

VDD = 7.5 Vdc VDD = 7.5 Vdc

56479108

, OUTPUT POWER (WATTS)

Figure 4. Gain versus Output Power

500 MHz

520 MHz

480 MHz

Pin = 27 dBm

VDD = 7.5 Vdc

80

70

60

50

40

30

Eff, DRAIN EFFICIENCY (%)

20

10

14

480 MHz

520 MHz

2

35

P

, OUTPUT POWER (WATTS)

out

500 MHz

68791011

Figure 5. Drain Efficiency versus Output Power

80

480 MHz

70

500 MHz

520 MHz

Pin = 27 dBm

VDD = 7.5 Vdc

Eff, DRAIN EFFICIENCY (%)

60

50

40

0

200 1000400 600

IDQ, BIASING CURRENT (mA)

Figure 6. Output Power versus Biasing Current

12

10

500 MHz

520 MHz

480 MHz

69107

VDD, SUPPLY VOLTAGE (VOLTS)

8

Pin = 27 dBm

IDQ = 150 mA

, OUTPUT POWER (WATTS)

out

P

8

6

4

2

0

5

Figure 8. Output Power versus Supply Voltage

800

30

200

4000

IDQ, BIASING CURRENT (mA)

600 1000

800

Figure 7. Drain Efficiency versus Biasing Current

80

480 MHz

Pin = 27 dBm

IDQ = 150 mA

9

Eff, DRAIN EFFICIENCY (%)

70

500 MHz

60

50

40

30

5

520 MHz

678 10

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 9. Drain Efficiency versus Supply Voltage

MRF1517NT1

4

RF Device Data

Freescale Semiconductor

V

GG

C8

C7

+

C6

R3

B1

R2

C17

B2

V

DD

+

C14

C15C16

R1

N1

RF

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1, C13 300 pF, 100 mil Chip Capacitor C2, C3, C4, C10, C11, C12 0 to 20 pF, Trimmer Capacitor C5, C17 130 pF, 100 mil Chip Capacitor C6, C14 10 µF, 50 V Electrolytic Capacitor C7, C15 0.1 µF, 100 mil Chip Capacitor C8, C16 1,000 pF, 100 mil Chip Capacitor C9 33 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount

Z1

C1

(2743021446)

Z2 Z3

C2

C3

Z4

C4

Figure 10. 400 - 440 MHz Broadband Test Circuit

DUT

C5

Z5

L1

Z6 Z8 Z9

Z7

C13

C10

C9

R1 12 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 33 kΩ, 1/2 W Resistor Z1 0.617″ x 0.080″ Microstrip Z2 0.723″ x 0.080″ Microstrip Z3 0.513″ x 0.080″ Microstrip Z4, Z5 0.260″ x 0.223″ Microstrip Z6 0.048″ x 0.080″ Microstrip Z7 0.577″ x 0.080″ Microstrip Z8 1.135″ x 0.080″ Microstrip Z9 0.076″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

C11

C12

N2

RF OUTPUT

10

, OUTPUT POWER (WATTS)

out

P

TYPICAL CHARACTERISTICS, 400 - 440 MHz

9

8

7

6

5

4

3

2

1

0

420 MHz

Figure 11. Output Power versus Input Power

400 MHz

440 MHz

VDD = 7.5 Vdc VDD = 7.5 Vdc

0.3 0.50.2

Pin, INPUT POWER (WATTS)

0

−5

−10

−15

−20

IRL, INPUT RETURN LOSS (dB)

0.40.1

−25 21

45

3

P

, OUTPUT POWER (WATTS)

out

400 MHz

420 MHz

440 MHz

689710

Figure 12. Input Return Loss versus Output Power

RF Device Data Freescale Semiconductor

MRF1517NT1

5

Freescale MRF 1517 NT 1 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual