Freescale MRF1513NT1 Technical Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen­cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.

• Specified Performance @ 520 MHz, 12.5 Volts

Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,

520 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

G

Impedance Parameters

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

7 Inch Reel.

D

S

Document Number: MRF1513N

Rev. 10, 2/2008

MRF1513NT1

520 MHz, 3 W, 12.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Drain Current — Continuous I

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

(1)

DSS

GS

D

P

stg

D

J

-0.5, +40 Vdc

± 20 Vdc

2 Adc

31.25

0.25

- 65 to +150 °C

150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case R

θ

JC

(2)

4 °C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J- STD -020 1 260 °C

TJ–T

1. Calculated based on the formula PD =

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.

R

C

θJC

W

W/°C

Unit

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

 Freescale Semiconductor, Inc., 2008. All rights reserved.

RF Device Data
Freescale Semiconductor

MRF1513NT1

1

Table 4. Electrical Characteristics

(TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

Gate-Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 60 µA)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

Dynamic Characteristics

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

(VDD = 12.5 Vdc, P

= 3 Watts, IDQ = 50 mA, f = 520 MHz)

out

Drain Efficiency

(VDD = 12.5 Vdc, P

= 3 Watts, IDQ = 50 mA, f = 520 MHz)

out

I

I

V

GS(th)

V

DS(on)

C

C

C

G

DSS

GSS

iss

oss

rss

ps

— — 1 µAdc

— — 1 µAdc

1 1.7 2.1 Vdc

— 0.65 — Vdc

— 33 — pF

— 16.5 — pF

— 2.2 — pF

— 15 — dB

η — 65 — %

MRF1513NT1

2

RF Device Data

Freescale Semiconductor

V

GG

C9

C8

+

C7

R4

B1

R3

C17

B2

V

DD

+

C14

C15C16

R1

N1

RF

INPUT

C1

B1, B2 Short Ferrite Beads, Fair Rite Products

C1, C13 240 pF, 100 mil Chip Capacitors
C2, C3, C4, C10,
C11, C12 0 to 20 pF Trimmer Capacitors
C5, C6, C17 120 pF, 100 mil Chip Capacitors
C7, C14 10 mF, 50 V Electrolytic Capacitors
C8, C15 1,200 pF, 100 mil Chip Capacitors
C9, C16 0.1 mF, 100 mil Chip Capacitors
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1, R3 15 Ω Chip Resistors (0805)
R2 1 kΩ, 1/8 W Resistor

Z2

Z1

C2

Z3 Z4

C3

#2743021446

C4

C5

Figure 1. 450 - 520 MHz Broadband Test Circuit

R2

Z5 Z6

C6

Z7

DUT

R4 33 kΩ, 1/8 W Resistor
Z1 0.236″ x 0.080″ Microstrip
Z2 0.981″ x 0.080″ Microstrip
Z3 0.240″ x 0.080″ Microstrip
Z4 0.098″ x 0.080″ Microstrip
Z5 0.192″ x 0.080″ Microstrip
Z6, Z7 0.260″ x 0.223″ Microstrip
Z8 0.705″ x 0.080″ Microstrip
Z9 0.342″ x 0.080″ Microstrip
Z10 0.347″ x 0.080″ Microstrip
Z11 0.846″ x 0.080″ Microstrip

Board Glass PTFE, 31 mils, 2 oz. Copper

L1

Z8

Z9 Z10

C11C10

Z11

C13

C12

N2

RF

OUTPUT

TYPICAL CHARACTERISTICS, 450 - 520 MHz

5

4

3

2

, OUTPUT POWER (WATTS)

out

1

P

0

0

0.05
Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

450 MHz

0.10

470 MHz

520 MHz

500 MHz

VDD = 12.5 Vdc

0.15 0.20

0

−5

−10

500 MHz

470 MHz

−15
520 MHz

IRL, INPUT RETURN LOSS (dB)

−20

VDD = 12.5 Vdc

450 MHz

10

P

234

, OUTPUT POWER (WATTS)

out

Figure 3. Input Return Loss

versus Output Power

5

RF Device Data
Freescale Semiconductor

MRF1513NT1

3

TYPICAL CHARACTERISTICS, 450 - 520 MHz

16

15

14

13

GAIN (dB)

12

11

10

0

6

5

4

3

, OUTPUT POWER (WATTS)

out

P

2

1

0

450 MHz

520 MHz

1

P

, OUTPUT POWER (WATTS)

out

470 MHz

500 MHz

VDD = 12.5 Vdc

234

Figure 4. Gain versus Output Power

450 MHz

520 MHz

VDD = 12.5 Vdc
Pin = 20.3 dBm

200 600400100

IDQ, BIASING CURRENT (mA)

300 300

500

470 MHz
500 MHz

70

60

50

40

Eff, DRAIN EFFICIENCY (%)

30

20

5

0

2

P

, OUTPUT POWER (WATTS)

out

520 MHz

500 MHz

31

470 MHz

450 MHz

VDD = 12.5 Vdc

45

Figure 5. Drain Efficiency versus Output Power

70

65

520 MHz

470 MHz

60

500 MHz

55

450 MHz

50

Eff, DRAIN EFFICIENCY (%)

45

40

100 600

200

IDQ, BIASING CURRENT (mA)

VDD = 12.5 Vdc
Pin = 20.3 dBm

4000

500

Figure 6. Output Power versus Biasing Current

5

4

3

450 MHz

520 MHz

500 MHz

11

VDD, SUPPLY VOLTAGE (VOLTS)

, OUTPUT POWER (WATTS)

out

P

2

1

0

8

470 MHz

9151610

Figure 8. Output Power versus Supply Voltage

MRF1513NT1

4

Pin = 20.3 dBm
IDQ = 50 mA

1412 13

Figure 7. Drain Efficiency versus

Biasing Current

80

70

60

50

40

Eff, DRAIN EFFICIENCY (%)

30

20

470 MHz

520 MHz

450 MHz

500 MHz

Pin = 20.3 dBm
IDQ = 50 mA

8

91011 16

VDD, SUPPLY VOLTAGE (VOLTS)

12

Figure 9. Drain Efficiency versus Supply Voltage

RF Device Data

Freescale Semiconductor

1513 14

V

GG

C9

C8

+

C7

R4

B1

R3

C16

B2

V

DD

+

C13

C14C15

N1

RF

INPUT

B1, B2 Short Ferrite Bead, Fair Rite Products

C1, C12 330 pF, 100 mil Chip Capacitors
C2, C3, C4,
C10, C11 1 to 20 pF Trimmer Capacitors
C5, C6, C16 120 pF, 100 mil Chip Capacitors
C7, C13 10 µF, 50 V Electrolytic Capacitors
C8, C14 1,200 pF, 100 mil Chip Capacitors
C9, C15 0.1 mF, 100 mil Chip Capacitors
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1 15 Ω Chip Resistor (0805)
R2 1 kΩ, 1/8 W Resistor

Z1

C1

Z2 Z3 Z4

C2

#2743021446

C3

C4

Figure 10. 400 - 470 MHz Broadband Test Circuit

R1

C5

R2

Z5 Z6

C6

Z7

DUT

R3 15 Ω Chip Resistor (0805)
R4 33 kΩ, 1/8 W Resistor
Z1 0.253″ x 0.080″ Microstrip
Z2 0.958″ x 0.080″ Microstrip
Z3 0.247″ x 0.080″ Microstrip
Z4 0.193″ x 0.080″ Microstrip
Z5 0.132″ x 0.080″ Microstrip
Z6, Z7 0.260″ x 0.223″ Microstrip
Z8 0.494″ x 0.080″ Microstrip
Z9 0.941″ x 0.080″ Microstrip
Z10 0.452″ x 0.080″ Microstrip

Board Glass PTFE, 31 mils, 2 oz. Copper

L1

Z8 Z10

C10

Z9

C11

C12

N2

RF
OUTPUT

TYPICAL CHARACTERISTICS, 400 - 470 MHz

5

4

3

2

, OUTPUT POWER (WATTS)

out

1

P

0

0 0.080.02

Pin, INPUT POWER (WATTS)

0.06 0.120.04

Figure 11. Output Power versus Input Power

440 MHz

400 MHz

470 MHz

VDD = 12.5 Vdc

0.10

0

−5

−10

−15

IRL, INPUT RETURN LOSS (dB)

−20

VDD = 12.5 Vdc

440 MHz

400 MHz

470 MHz

1

P

20

, OUTPUT POWER (WATTS)

out

3

Figure 12. Input Return Loss

versus Output Power

45

RF Device Data
Freescale Semiconductor

MRF1513NT1

5