Freescale MRF1511NT1 User Manual

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Document Number: MRF1511N

Rev. 8, 6/2009

Designed for broadband commercial and industrial applications at frequen-

MRF1511NT1

cies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 175 MHz, 7.5 Volts

D

Output Power — 8 Watts Power Gain — 13 dB Efficiency — 70%

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal

G

175 MHz, 8 W, 7.5 V

LATERAL N - CHANNEL

BROADBAND

RF POWER MOSFET

Impedance Parameters

• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,

S

7 inch Reel.

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

Gate-Source Voltage V

Drain Current — Continuous I

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

Operating Junction Temperature T

(1)

DSS

GS

D

P

stg

D

J

-0.5, +40 Vdc

± 20 Vdc

4 Adc

62.5

0.5

- 65 to +150 °C

150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case R

θ

JC

(2)

2 °C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113, IPC/JEDEC J- STD - 020 3 260 °C

TJ–T

1. Calculated based on the formula PD =

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.

R

C

θJC

W

W/°C

Unit

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

RF Device Data Freescale Semiconductor

MRF1511NT1

1

Table 4. Electrical Characteristics

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 35 Vdc, VGS = 0)

Gate-Source Leakage Current

(VGS = 10 Vdc, VDS = 0)

On Characteristics

Gate Threshold Voltage

(VDS = 7.5 Vdc, ID = 170 µA)

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Dynamic Characteristics

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 175 MHz)

out

Drain Efficiency

(VDD = 7.5 Vdc, P

= 8 Watts, IDQ = 150 mA, f = 175 MHz)

out

I

V

GS(th)

V

DS(on)

C

G

DSS

GSS

iss

oss

rss

ps

— — 1 µAdc

1 1.6 2.1 Vdc

— 0.4 — Vdc

— 100 — pF

— 53 — pF

— 8 — pF

— 13 — dB

η — 70 — %

MRF1511NT1

2

RF Device Data

Freescale Semiconductor

RF

INPUT

N1

C1

V

GG

C8

Z1

C2

Z2 Z3

C3

C7

+

C6

L2L1

R4

R1

C4

B1

Z4 Z5

R3

R2

DUT

C5

C18

B2

L4

Z6

Z7

Z8

C9 C10 C13C12

C11

L3

C16C17

Z9 Z10

+

C15

C14

V

DD

N2

RF OUTPUT

B1, B2 Short Ferrite Beads, Fair Rite Products

C1, C5, C18 120 pF, 100 mil Chip Capacitors C2, C10, C12 0 to 20 pF, Trimmer Capacitors C3 33 pF, 100 mil Chip Capacitor C4 68 pF, 100 mil Chip Capacitor C6, C15 10 µF, 50 V Electrolytic Capacitors C7, C16 1,200 pF, 100 mil Chip Capacitors C8, C17 0.1 µF, 100 mil Chip Capacitors C9 150 pF, 100 mil Chip Capacitor C11 43 pF, 100 mil Chip Capacitor C13 24 pF, 100 mil Chip Capacitor C14 300 pF, 100 mil Chip Capacitor L1, L3 12.5 nH, A04T, Coilcraft L2 26 nH, 4 Turn, Coilcraft L4 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mounts

(2743021446)

Figure 1. 135 - 175 MHz Broadband Test Circuit

TYPICAL CHARACTERISTICS, 135 - 175 MHz

10

8

155 MHz

0.4 0.70.2

135 MHz

0.50.1

, OUTPUT POWER (WATTS)

out

P

6

4

2

0

Pin, INPUT POWER (WATTS)

175 MHz

0.3

VDD = 7.5 V

R1 15 Ω, 0805 Chip Resistor R2 1.0 kΩ, 1/8 W Resistor R3 1.0 kΩ, 0805 Chip Resistor R4 33 kΩ, 1/8 W Resistor Z1 0.200″ x 0.080″ Microstrip Z2 0.755″ x 0.080″ Microstrip Z3 0.300″ x 0.080″ Microstrip Z4 0.065″ x 0.080″ Microstrip Z5, Z6 0.260″ x 0.223″ Microstrip Z7 0.095″ x 0.080″ Microstrip Z8 0.418″ x 0.080″ Microstrip Z9 1.057″ x 0.080″ Microstrip Z10 0.120″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

−5

VDD = 7.5 V

−10 135 MHz

−15

−20

IRL, INPUT RETURN LOSS (dB)

−25

2145

30.6

175 MHz

155 MHz

P

, OUTPUT POWER (WATTS)

out

769108

Figure 2. Output Power versus Input Power

RF Device Data Freescale Semiconductor

Figure 3. Input Return Loss

versus Output Power

MRF1511NT1

3

TYPICAL CHARACTERISTICS, 135 - 175 MHz

16

14

12

GAIN (dB)

10

8

6

12

11

10

9

8

7

, OUTPUT POWER (WATTS)

6

out

P

5

4

0

155 MHz

135 MHz

175 MHz

VDD = 7.5 V

2

31

P

out

5

4

, OUTPUT POWER (WATTS)

710986

Figure 4. Gain versus Output Power

155 MHz

135 MHz

200 1000400 600

IDQ, BIASING CURRENT (mA)

175 MHz

VDD = 7.5 V Pin = 27 dBm

800

70

60

50

40

30

20

Eff, DRAIN EFFICIENCY (%)

10

0

010

2

31

P

out

135 MHz

475869

, OUTPUT POWER (WATTS)

155 MHz

175 MHz

VDD = 7.5 V

Figure 5. Drain Efficiency versus Output Power

80

70

155 MHz

Eff, DRAIN EFFICIENCY (%)

60

50

40

200

IDQ, BIASING CURRENT (mA)

4000

135 MHz

175 MHz

VDD = 7.5 V Pin = 27 dBm

600 1000

800

Figure 6. Output Power versus Biasing Current

14

12

10

, OUTPUT POWER (WATTS)

out

P

8

6

4

2

4

6141612

8

VDD, SUPPLY VOLTAGE (VOLTS)

175 MHz

10

Figure 8. Output Power versus Supply Voltage

MRF1511NT1

4

135 MHz

155 MHz

IDQ = 150 mA Pin = 27 dBm

Figure 7. Drain Efficiency versus

Biasing Current

80

70

155 MHz

Eff, DRAIN EFFICIENCY (%)

60

50

40

30

4

612816

VDD, SUPPLY VOLTAGE (VOLTS)

135 MHz 175 MHz

IDQ = 150 mA Pin = 27 dBm

10

Figure 9. Drain Efficiency versus Supply Voltage

RF Device Data

Freescale Semiconductor

14

RF

INPUT

N1

C1

V

GG

+

C6

C7

C8

L1

Z1

C2

Z2 Z3

C3

R4

R1

C4

B1

Z4 Z5

R3

R2

DUT

C5

C16

B2

L4

Z6

Z7 Z9 Z10

Z8

L3

C9

C14C15

V

DD

+

C13

N2

RF

C12

C11C10

OUTPUT

B1, B2 Short Ferrite Beads, Fair Rite Products

C1, C12 330 pF, 100 mil Chip Capacitors C2 43 pF, 100 mil Chip Capacitor C3, C10 0 to 20 pF, Trimmer Capacitors C4 24 pF, 100 mil Chip Capacitor C5, C16 120 pF, 100 mil Chip Capacitors C6, C13 10 µF, 50 V Electrolytic Capacitors C7, C14 1,200 pF, 100 mil Chip Capacitors C8, C15 0.1 µF, 100 mil Chip Capacitors C9 380 pF, 100 mil Chip Capacitor C11 75 pF, 100 mil Chip Capacitor L1 82 nH, Coilcraft L2 55.5 nH, 5 Turn, Coilcraft L3 39 nH, 6 Turn, Coilcraft

(2743021446)

Figure 10. 66 - 88 MHz Broadband Test Circuit

TYPICAL CHARACTERISTICS, 66 - 88 MHz

10

77 MHz

, OUTPUT POWER (WATTS)

out

P

8

6

4

2

0

Pin, INPUT POWER (WATTS)

0.3

88 MHz

0.4 0.70.2

66 MHz

0.50.1

VDD = 7.5 V

N1, N2 Type N Flange Mounts R1 15 Ω, 0805 Chip Resistor R2 51 Ω, 1/2 W Resistor R3 100 Ω, 0805 Chip Resistor R4 33 kΩ, 1/8 W Resistor Z1 0.136″ x 0.080″ Microstrip Z2 0.242″ x 0.080″ Microstrip Z3 1.032″ x 0.080″ Microstrip Z4 0.145″ x 0.080″ Microstrip Z5, Z6 0.260″ x 0.223″ Microstrip Z7 0.134″ x 0.080″ Microstrip Z8 0.490″ x 0.080″ Microstrip Z9 0.872″ x 0.080″ Microstrip Z10 0.206″ x 0.080″ Microstrip Board Glass Teflon, 31 mils, 2 oz. Copper

0

−2

−4

−6

−8

−10

−12

−14

−16

IRL, INPUT RETURN LOSS (dB)

−18

−20

21

45

30.6 P

, OUTPUT POWER (WATTS)

out

88 MHz

VDD = 7.5 V

66 MHz

77 MHz

769108

Figure 11. Output Power versus Input Power

RF Device Data Freescale Semiconductor

Figure 12. Input Return Loss

versus Output Power

MRF1511NT1

5

Freescale MRF1511NT1 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual