Page 1
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Document Number: MRF1511N
Rev. 8, 6/2009
Designed for broadband commercial and industrial applications at frequen-
MRF1511NT1
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
• Specified Performance @ 175 MHz, 7.5 Volts
D
Output Power — 8 Watts
Power Gain — 13 dB
Efficiency — 70%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal
G
175 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Impedance Parameters
• N Suffix Indicates Lead- Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
S
7 inch Reel.
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
(1)
DSS
GS
D
P
stg
D
J
-0.5, +40 Vdc
± 20 Vdc
4 Adc
62.5
0.5
- 65 to +150 °C
150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
Thermal Resistance, Junction to Case R
θ
JC
(2)
2 °C/W
Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22-A113, IPC/JEDEC J- STD - 020 3 260 °C
TJ–T
1. Calculated based on the formula PD =
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
R
C
θJC
W
W/°C
Unit
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2008- 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1511NT1
1
Page 2
Table 4. Electrical Characteristics
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0)
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
On Characteristics
Gate Threshold Voltage
(VDS = 7.5 Vdc, ID = 170 µA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Dynamic Characteristics
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 7.5 Vdc, P
= 8 Watts, IDQ = 150 mA, f = 175 MHz)
out
Drain Efficiency
(VDD = 7.5 Vdc, P
= 8 Watts, IDQ = 150 mA, f = 175 MHz)
out
I
I
V
GS(th)
V
DS(on)
C
C
C
G
DSS
GSS
iss
oss
rss
ps
— — 1 µAdc
— — 1 µAdc
1 1.6 2.1 Vdc
— 0.4 — Vdc
— 100 — pF
— 53 — pF
— 8 — pF
— 13 — dB
η — 70 — %
MRF1511NT1
2
RF Device Data
Freescale Semiconductor
Page 3
RF
INPUT
N1
C1
V
GG
C8
Z1
C2
Z2 Z3
C3
C7
+
C6
L2L1
R4
R1
C4
B1
Z4 Z5
R3
R2
DUT
C5
C18
B2
L4
Z6
Z7
Z8
C9 C10 C13C12
C11
L3
C16C17
Z9 Z10
+
C15
C14
V
DD
N2
RF
OUTPUT
B1, B2 Short Ferrite Beads, Fair Rite Products
C1, C5, C18 120 pF, 100 mil Chip Capacitors
C2, C10, C12 0 to 20 pF, Trimmer Capacitors
C3 33 pF, 100 mil Chip Capacitor
C4 68 pF, 100 mil Chip Capacitor
C6, C15 10 µF, 50 V Electrolytic Capacitors
C7, C16 1,200 pF, 100 mil Chip Capacitors
C8, C17 0.1 µF, 100 mil Chip Capacitors
C9 150 pF, 100 mil Chip Capacitor
C11 43 pF, 100 mil Chip Capacitor
C13 24 pF, 100 mil Chip Capacitor
C14 300 pF, 100 mil Chip Capacitor
L1, L3 12.5 nH, A04T, Coilcraft
L2 26 nH, 4 Turn, Coilcraft
L4 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
(2743021446)
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 MHz
10
8
155 MHz
0.4 0.70.2
135 MHz
0.50.1
, OUTPUT POWER (WATTS)
out
P
6
4
2
0
0
Pin, INPUT POWER (WATTS)
175 MHz
0.3
VDD = 7.5 V
R1 15 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 1.0 kΩ, 0805 Chip Resistor
R4 33 kΩ, 1/8 W Resistor
Z1 0.200″ x 0.080″ Microstrip
Z2 0.755″ x 0.080″ Microstrip
Z3 0.300″ x 0.080″ Microstrip
Z4 0.065″ x 0.080″ Microstrip
Z5, Z6 0.260″ x 0.223″ Microstrip
Z7 0.095″ x 0.080″ Microstrip
Z8 0.418″ x 0.080″ Microstrip
Z9 1.057″ x 0.080″ Microstrip
Z10 0.120″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
−5
VDD = 7.5 V
−10
135 MHz
−15
−20
IRL, INPUT RETURN LOSS (dB)
−25
2145
30.6
175 MHz
155 MHz
P
, OUTPUT POWER (WATTS)
out
769108
Figure 2. Output Power versus Input Power
RF Device Data
Freescale Semiconductor
Figure 3. Input Return Loss
versus Output Power
MRF1511NT1
3
Page 4
TYPICAL CHARACTERISTICS, 135 - 175 MHz
16
14
12
GAIN (dB)
10
8
6
12
11
10
9
8
7
, OUTPUT POWER (WATTS)
6
out
P
5
4
0
155 MHz
135 MHz
175 MHz
VDD = 7.5 V
2
31
P
out
5
4
, OUTPUT POWER (WATTS)
710986
Figure 4. Gain versus Output Power
155 MHz
135 MHz
200 1000400 600
IDQ, BIASING CURRENT (mA)
175 MHz
VDD = 7.5 V
Pin = 27 dBm
800
70
60
50
40
30
20
Eff, DRAIN EFFICIENCY (%)
10
0
010
2
31
P
out
135 MHz
475869
, OUTPUT POWER (WATTS)
155 MHz
175 MHz
VDD = 7.5 V
Figure 5. Drain Efficiency versus Output Power
80
70
155 MHz
Eff, DRAIN EFFICIENCY (%)
60
50
40
200
IDQ, BIASING CURRENT (mA)
4000
135 MHz
175 MHz
VDD = 7.5 V
Pin = 27 dBm
600 1000
800
Figure 6. Output Power versus Biasing Current
14
12
10
, OUTPUT POWER (WATTS)
out
P
8
6
4
2
4
6141612
8
VDD, SUPPLY VOLTAGE (VOLTS)
175 MHz
10
Figure 8. Output Power versus Supply Voltage
MRF1511NT1
4
135 MHz
155 MHz
IDQ = 150 mA
Pin = 27 dBm
Figure 7. Drain Efficiency versus
Biasing Current
80
70
155 MHz
Eff, DRAIN EFFICIENCY (%)
60
50
40
30
4
612816
VDD, SUPPLY VOLTAGE (VOLTS)
135 MHz
175 MHz
IDQ = 150 mA
Pin = 27 dBm
10
Figure 9. Drain Efficiency versus Supply Voltage
RF Device Data
Freescale Semiconductor
14
Page 5
RF
INPUT
N1
C1
V
GG
+
C6
C7
C8
L1
Z1
C2
Z2 Z3
C3
R4
R1
C4
B1
Z4 Z5
R3
R2
DUT
C5
C16
B2
L4
Z6
Z7 Z9 Z10
Z8
L3
C9
C14C15
V
DD
+
C13
N2
RF
C12
C11C10
OUTPUT
B1, B2 Short Ferrite Beads, Fair Rite Products
C1, C12 330 pF, 100 mil Chip Capacitors
C2 43 pF, 100 mil Chip Capacitor
C3, C10 0 to 20 pF, Trimmer Capacitors
C4 24 pF, 100 mil Chip Capacitor
C5, C16 120 pF, 100 mil Chip Capacitors
C6, C13 10 µF, 50 V Electrolytic Capacitors
C7, C14 1,200 pF, 100 mil Chip Capacitors
C8, C15 0.1 µF, 100 mil Chip Capacitors
C9 380 pF, 100 mil Chip Capacitor
C11 75 pF, 100 mil Chip Capacitor
L1 82 nH, Coilcraft
L2 55.5 nH, 5 Turn, Coilcraft
L3 39 nH, 6 Turn, Coilcraft
(2743021446)
Figure 10. 66 - 88 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 66 - 88 MHz
10
77 MHz
, OUTPUT POWER (WATTS)
out
P
8
6
4
2
0
0
Pin, INPUT POWER (WATTS)
0.3
88 MHz
0.4 0.70.2
66 MHz
0.50.1
VDD = 7.5 V
N1, N2 Type N Flange Mounts
R1 15 Ω, 0805 Chip Resistor
R2 51 Ω, 1/2 W Resistor
R3 100 Ω, 0805 Chip Resistor
R4 33 kΩ, 1/8 W Resistor
Z1 0.136″ x 0.080″ Microstrip
Z2 0.242″ x 0.080″ Microstrip
Z3 1.032″ x 0.080″ Microstrip
Z4 0.145″ x 0.080″ Microstrip
Z5, Z6 0.260″ x 0.223″ Microstrip
Z7 0.134″ x 0.080″ Microstrip
Z8 0.490″ x 0.080″ Microstrip
Z9 0.872″ x 0.080″ Microstrip
Z10 0.206″ x 0.080″ Microstrip
Board Glass Teflon, 31 mils, 2 oz. Copper
0
−2
−4
−6
−8
−10
−12
−14
−16
IRL, INPUT RETURN LOSS (dB)
−18
−20
21
45
30.6
P
, OUTPUT POWER (WATTS)
out
88 MHz
VDD = 7.5 V
66 MHz
77 MHz
769108
Figure 11. Output Power versus Input Power
RF Device Data
Freescale Semiconductor
Figure 12. Input Return Loss
versus Output Power
MRF1511NT1
5
Page 6
TYPICAL CHARACTERISTICS, 66 - 88 MHz
18
16
14
GAIN (dB)
12
10
8
1
12
11
10
9
8
7
, OUTPUT POWER (WATTS)
6
out
P
5
4
0
66 MHz
77 MHz
88 MHz
VDD = 7.5 V
2
4
35
P
, OUTPUT POWER (WATTS)
out
769810
Figure 13. Gain versus Output Power
77 MHz
88 MHz
66 MHz
VDD = 7.5 V
Pin = 25.7 dBm
200 1000400 600
IDQ, BIASING CURRENT (mA)
800
70
60
50
40
30
20
Eff, DRAIN EFFICIENCY (%)
10
0
14
32
P
out
5
, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus
Output Power
80
70
Eff, DRAIN EFFICIENCY (%)
60
50
40
66 MHz
200
IDQ, BIASING CURRENT (mA)
88 MHz
77 MHz
4000
88 MHz
77 MHz
600 1000
66 MHz
VDD = 7.5 V
106987
VDD = 7.5 V
Pin = 25.7 dBm
800
14
12
10
8
6
, OUTPUT POWER (WATTS)
out
P
4
2
5
MRF1511NT1
6
Figure 15. Output Power versus
Biasing Current
77 MHz
66 MHz
88 MHz
IDQ = 150 mA
Pin = 25.7 dBm
69107
VDD, SUPPLY VOLTAGE (VOLTS)
8
Figure 17. Output Power versus
Supply Voltage
Eff, DRAIN EFFICIENCY (%)
Figure 16. Drain Efficiency versus
Biasing Current
80
70
60
50
40
30
5
88 MHz
77 MHz
66 MHz
IDQ = 150 mA
Pin = 25.7 dBm
678 10
VDD, SUPPLY VOLTAGE (VOLTS)
9
Figure 18. Drain Efficiency versus
Supply Voltage
RF Device Data
Freescale Semiconductor
Page 7
TYPICAL CHARACTERISTICS
9
10
)
2
8
10
MTTF FACTOR (HOURS X AMPS
7
10
90 110 130 150 170 190100 120 140 160 180 200
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 19. MTTF Factor versus Junction Temperature
2
for MTTF in a particular application.
D
210
2
RF Device Data
Freescale Semiconductor
MRF1511NT1
7
Page 8
f = 88 MHz
f = 175 MHz
ZOL*
135
155
f = 175 MHz
Z
Z
in
in
Zo = 10 Ω
77
155
135
f = 88 MHz
77
66
66
ZOL*
VDD = 7.5 V, IDQ = 150 mA, P
f
MHz
Z
in
Ω
135 20.1 - j0.5 2.53 -j2.61
155 17.0 +j3.6 3.01 - j2.48
175 15.2 +j7.9 2.52 - j3.02
Zin= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 68 pF capacitor in
series with gate. (See Figure 1).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
out
= 8 W
ZOL*
Ω
VDD = 7.5 V, IDQ = 150 mA, P
f
MHz
Z
in
Ω
out
= 8 W
66 25.3 - j0.31 3.62 -j0.751
77 25.6 +j3.62 3.59 -j0.129
88 26.7 +j6.79 3.37 -j0.173
Zin= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 24 pF capacitor in
series with gate. (See Figure 10).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
ZOL*
Ω
MRF1511NT1
8
Z
in
ZOL*
Figure 20. Series Equivalent Input and Output Impedance
RF Device Data
Freescale Semiconductor
Page 9
Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc)
f
f
f
IDQ = 150 mA
S
11
MHz
|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
30 0.88 - 165 18.92 95 0.015 8 0.84 -169
50 0.88 - 171 11.47 91 0.016 -5 0.84 - 173
100 0.87 -175 5.66 85 0.016 -7 0.84 -176
150 0.87 -176 3.75 82 0.015 -5 0.85 -176
200 0.87 -177 2.78 78 0.014 -6 0.84 -176
250 0.87 -177 2.16 75 0.014 -10 0.85 - 176
300 0.88 -177 1.77 72 0.012 -17 0.86 - 176
350 0.88 -177 1.49 69 0.013 -11 0.86 -176
400 0.88 -177 1.26 66 0.013 -17 0.87 - 175
450 0.88 -177 1.08 64 0.011 -20 0.87 - 175
500 0.89 -176 0.96 63 0.012 -20 0.88 - 175
S
21
S
12
IDQ = 800 mA
S
11
MHz
|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
30 0.89 - 166 18.89 95 0.014 10 0.85 - 170
50 0.88 - 172 11.44 91 0.015 8 0.84 - 174
100 0.87 -175 5.65 86 0.016 -2 0.85 - 176
150 0.87 -177 3.74 82 0.014 -8 0.84 - 177
200 0.87 -177 2.78 78 0.013 -18 0.85 - 177
250 0.88 -177 2.16 75 0.012 -11 0.85 - 176
300 0.88 -177 1.77 73 0.015 -15 0.86 - 176
350 0.88 -177 1.50 70 0.009 -7 0.87 - 176
400 0.88 -177 1.26 67 0.012 -3 0.87 - 176
450 0.88 -177 1.09 65 0.012 -18 0.87 - 175
500 0.89 -177 0.97 64 0.009 -10 0.88 - 175
S
21
S
12
S
22
S
22
IDQ = 1.5 A
S
11
MHz
|S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ
30 0.90 - 168 17.89 95 0.013 2 0.86 - 172
50 0.89 - 173 10.76 91 0.013 3 0.86 - 175
100 0.88 -176 5.32 86 0.014 -19 0.86 - 177
150 0.88 -177 3.53 83 0.013 -6 0.86 - 177
200 0.88 -177 2.63 80 0.011 -4 0.86 - 177
250 0.88 -178 2.05 77 0.012 -14 0.86 - 177
300 0.88 -177 1.69 75 0.013 -2 0.87 - 177
350 0.89 -177 1.43 72 0.010 -9 0.87 - 176
400 0.89 -177 1.22 70 0.014 -3 0.88 - 176
450 0.89 -177 1.06 68 0.011 -8 0.88 - 176
500 0.89 -177 0.94 67 0.011 -15 0.88 - 176
S
21
S
12
S
22
MRF1511NT1
RF Device Data
Freescale Semiconductor
9
Page 10
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common - source, RF power, N- Channel
enhancement mode, Lateral M
ield-Effect Transistor (MOSFET). Freescale Application
F
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate - to -drain (C
gate - to - source (C
). The PN junction formed during fab-
gs
rication of the RF MOSFET results in a junction capacitance
from drain- to - source (C
terized as input (C
(C
) capacitances on data sheets. The relationships be-
rss
ds
), output (C
iss
tween the inter-terminal capacitances and those given on
data sheets are shown below. The C
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
C
gd
Gate
C
gs
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full-on condition. This on - resistance, R
in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The
etal- Oxide Semiconductor
), and
gd
). These capacitances are charac-
) and reverse transfer
oss
can be specified in
iss
Drain
C
= Cgd + C
C
ds
Source
iss
C
oss
C
= C
rss
= C
gd
gd
DS(on)
gs
+ C
ds
, occurs
drain- source voltage under these conditions is termed
V
. For MOSFETs, V
DS(on)
has a positive temperature
DS(on)
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BV
values for this device are higher than normally re-
DSS
quired for typical applications. Measurement of BV
DSS
is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high - on the order of 10
9
Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate- to - source threshold voltage,
V
.
GS(th)
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can
result in turn- on of the devices due to voltage build - up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate - to -source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate - to -source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate- drain capacitance. If the
gate - to - source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate- threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (I
This device was characterized at I
), whose value is application dependent.
DQ
= 150 mA, which is the
DQ
suggested value of bias current for typical applications. For
special applications such as linear amplification, I
DQ
may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1511NT1
10
RF Device Data
Freescale Semiconductor
Page 11
MOUNTING
The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD- 1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two- port stability analysis with this device’s
S- parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design
Using Two- Port Parameters” for a discussion of two port
network theory and stability.
RF Device Data
Freescale Semiconductor
MRF1511NT1
11
Page 12
PACKAGE DIMENSIONS
B
ZONE V
ZONE W
A
F
3
0.095
2.41
0.146
3.71
0.115
2.92
21
D
R
L
0.115
2.92
0.020
4
N
0.35 (0.89) X 45 5
K
Q
U
H
4
1
3
G
ZONE X
2
S
VIEW Y- Y
C
__
"
P
YY
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
CASE 466- 03
ISSUE D
PLD- 1.5
10 DRAFT
_
E
SOLDER FOOTPRINT
DIM MIN MAX MIN MAX
A 0.255 0.265 6.48 6.73
B 0.225 0.235 5.72 5.97
C 0.065 0.072 1.65 1.83
D 0.130 0.150 3.30 3.81
E 0.021 0.026 0.53 0.66
F 0.026 0.044 0.66 1.12
G 0.050 0.070 1.27 1.78
H 0.045 0.063 1.14 1.60
J 0.160 0.180 4.06 4.57
K 0.273 0.285 6.93 7.24
L 0.245 0.255 6.22 6.48
N 0.230 0.240 5.84 6.10
P 0.000 0.008 0.00 0.20
Q 0.055 0.063 1.40 1.60
R 0.200 0.210 5.08 5.33
S 0.006 0.012 0.15 0.31
U 0.006 0.012 0.15 0.31
ZONE V 0.000 0.021 0.00 0.53
ZONE W 0.000 0.010 0.00 0.25
ZONE X 0.000 0.010 0.00 0.25
0.51
inches
mm
MILLIMETERSINCHES
PLASTIC
MRF1511NT1
12
RF Device Data
Freescale Semiconductor
Page 13
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small- Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
7 June 2008 • Corrected specified performance values for power gain and efficiency on p. 1 to match typical
8 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
performance values in the functional test table on p. 2
• Added Product Documentation and Revision History, p. 13
process as described in Product and Process Change Notification number, PCN13516, p. 1
• Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 13
RF Device Data
Freescale Semiconductor
MRF1511NT1
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