FREESCALE MPX 53GP Datasheet

Pressure

Freescale Semiconductor

50 kPa Uncompensated
Silicon Pressure Sensors

The MPX53 series silicon piezoresistive pressure sensors provide a very
accurate and linear voltage output, directly proportional to the applied
pressure. These standard, low cost, uncompensated sensors permit
manufacturers to design and add their own external temperature
compensating and signal conditioning networks. Compensation techniques
are simplified because of the predictability of Freescale's single element
strain gauge design.

Features

• Low Cost

• Patented Silicon Shear Stress Strain Gauge Design

• Ratiometric to Supply Voltage

• Easy to Use Chip Carrier Package Options

• 60 mV Span (Typical)

• Differential and Gauge Options

MPX53

Rev 7, 05/2009

MPX53

Series

0 to 50 kPa (0 to 7.25 psi)

60 mV Full Scale Span

(Typical)

Application Examples

• Air Movement Control

• Environmental Control Systems

• Level Indicators

• Leak Detection

• Medical Instrumentation

• Industrial Controls

• Pneumatic Control Systems

• Robotics

Device Name

Unibody Package (MPX53 Series)

MPX53D
MPX53DP
MPX53GP

Small Outline Package (MPXV53G Series)

MPXV53GC7U

Package

Options

Tape & Reel

Rail 344C • •
Rail 344B • •

Rail 482C • •

MPXV53GC7U
CASE 482C-03

Case

No.

344 • •

ORDERING INFORMATION

# of Ports Pressure Type

None Single Dual Gauge Differential Absolute

UNIBODY PACKAGESSMALL OUTLINE PACKAGE

MPX53D

CASE 344-15

MPX53GP

CASE 344B-01

MPX53DP

CASE 344C-01

Device

Marking

MPX53D
MPX53DP
MPX53GP

MPXV53G

© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.

Pressure

Operating Characteristics

Table 1. Operating Characteristics (VS = 3.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2)

Characteristic Symbol Min Typ Max Units

Pressure Range
Supply Voltage
Supply Current I
Full Scale Span

(4)

Offset
Sensitivity ΔV/ΔΡ — 1.2 — mV/kPa
Linearity — –0.6 — 0.4 %V
Pressure Hysteresis (0 to 50 kPa) — — ±0.1 — %V
Temperature Hysteresis — — ±0.5 — %V
Temperature Coefficient of Full Scale Span TCV
Temperature Coefficient of Offset TCV
Temperature Coefficient of Resistance TCR 0.21 — 0.27 %ZIN/°C
Input Impedance Z
Output Impedance Z
Response Time
Warm-Up Time
Offset Stability

1. 1.0 kPa (kiloPascal) equals 0.145 psi.

2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional
error due to device self-heating.

3. Full Scale Span (V
minimum rated pressure.

4. Offset (V

5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.

6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure is stabilized.

7. Offset stability is the product’s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.

(1)

(2)

(3)

(5)

(10% to 90%)

(6)

(7)

) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the

FSS

) is defined as the output voltage at the minimum rated pressure.

OFF

V
V

P

V

OUT

OP

S

O

FSS

OFF

IN

t

R

FSS

OFF

0 — 50 kPa
— 3.0 6.0 V
— 6.0 — mAdc
45 60 90 mV

0 20 35 mV

–0.22 — -0.16 %V

— ±15 — µV/°C

355 — 505 Ω
750 — 1875 Ω

— 1.0 — ms

— — 20 — ms
— — ±0.5 — %V

DC

FSS

FSS

FSS

FSS

/°C

FSS

MPX53

Sensors

2 Freescale Semiconductor

Maximum Ratings

Pressure

Table 2. Maximum Ratings

Maximum Pressure (P1 > P2) P
Burst Pressure (P1 > P2) P
Storage Temperature T
Operating Temperature T

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

(1)

Rating Symbol Value Unit

MAX
Burst
STG

A

Figure 1 shows a schematic of the internal circuitry on the stand-alone pressure sensor chip.

3

+V

S

2

+V

Sensor

1

GND

OUT

4

-V

OUT

175 kPa

200 kPa
–40 to +125 °C
–40 to +125 °C

Figure 1. Uncompensated Pressure Sensor Sche ma ti c

Voltage Output versus Applied Differential Pressure

The differential voltage output of the sensor is directly
proportional to the diff ere n ti a l pressure (P1) relative to the
vacuum side (P2). Similarly, output voltage increases as

increasing vacuum is applied to the vacuum side (P2) relative
to the pressure side (P1).

MPX53

Sensors
Freescale Semiconductor 3

Pressure

100

Temperature Compensation

Figure 2 shows the typical output characteristics of the

MPX53 series over temperature.

The piezoresistive pressure sensor element is a
semiconductor device which gives an electrical output signal
proportional to the pressure applied to the device. This device
uses a unique transverse voltage diffused semiconductor
strain gauge which is sensitive to stresses produced in a thin
silicon diaphragm by the applied pressure.

Because this strain gauge is an integral part of the silicon
diaphragm, there are no temperature effects due to
differences in the thermal expansion of the strain gauge and
the diaphragm, as are often encountered in bonded strain
gauge pressure sensors. However, the properties of the
strain gauge itself are temperature dependent, requiring that
the device be temperature compensated if it is to be used
over an extensive temperature range.

Temperature compensation and offset calibration can be
achieved rather simply with additional resistive components, or
by designing your system using the MPX2053 series sensors.

Several approaches to external temperature
compensation over –40 to +125°C and 0 to +80°C are
presented in Freescale Application Note, AN840.

LINEARITY

Linearity refers to how well a transducer's output follows

= V

the equation: V

out

+ (sensitivity x P) over the operating

off

pressure range (see Figure 3). There are two basic methods
for calculating nonlinearity: (1) end point straight line fit or
(2) a least squares best line fit. While a least squares fit gives
the “best case” linearity error (lower numerical value), the
calculations required are burdenso me .

Conversely, an end point fit will give the “worst case” error
(often more desirable in error budget calculations) and the
calculations are more straightforward for the user.
Freescale’s specified pressure sensor linearities are based
on the end point straight line method measured at the
midrange pressure.

Figure 4 illustrates the differential or gauge configuration in

the unibody chip carrier (Case 344). A silicone gel isolates the
die surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.

The MPX53 series pressure sensor operating
characteristics and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
performance and long term reliability. Refer to application
note AN3728, for more information regarding media
compatibility.

MPX53

90

V

= 3 Vdc

S

80

P1 > P2

70
60
50
40
30

Output (mVdc)

20
10

0

012 34 5678

PSI
kPa

10 20 30 40 50

0

–40°C

Pressure Differential

+25°C

+125ºC

Span

Range

(Typ)

Offset

(Typ)

Figure 2. Output vs. Pressure Differential

90
80

70

Actual

60
50
40

30

Output (mVdc)

20
10

0

0MAXP

Linearity

Theoretical

Pressure (kPa)

Span

(V

FSS

Offset

(V

OFF

Silicone

Die Coat Die

)

)

OP

Wire Bond

Lead Frame

P1

P2

Stainless Steel

Metal Cover

Epoxy
Case

RTV Die
Bond

Figure 3. Linearity Specification Comparison Figure 4. Unibody Package — Cross-Sectional Diagram

(Not to Scale)

MPX53

Sensors

4 Freescale Semiconductor

PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE

Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing silicone gel which
isolates the die from the environment. The Freescale MPX
pressure sensor is designed to operate with positive
differential pressure applied, P1 > P2.

The Pressure (P1) side may be identified by using the
following table.

Pressure

Part Number Case Type

MPX53D 344 Stainless Steep Cap
MPX53DP 344C Side with Port Marking
MPX53GP 344B Side with Port Attached
MPXV53 Series 482C Side with Port Attached

Pressure (P1) Side

Identifier

MPX53

Sensors
Freescale Semiconductor 5

Pressure

PACKAGE DIMENSIONS

C

R

M

1

B

-A-

23

4

N

PIN 1

1234

L

-T-

SEATING

J

PLANE

F

D

4 PL

0.136 (0.005) T

G

M

M

A

F

DAMBAR TRIM ZONE:
THIS IS INCLUDED
WITHIN DIM. "F" 8 PL

Y

NOTES:

1.

DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
CONTROLLING DIMENSION: INCH.

2.
DIMENSION -A- IS INCLUSIVE OF THE MOLD

3.
STOP RING. MOLD STOP RING NOT TO EXCEED

Z

16.00 (0.630).

DIM MIN MAX MIN MAX

A 0.595 0.630 15.11 16.00
B 0.514 0.534 13.06 13.56
C 0.200 0.220 5.08 5.59
D 0.016 0.020 0.41 0.51
F 0.048 0.064 1.22 1.63
G 0.100 BSC 2.54 BSC
J 0.014 0.016 0.36 0.40
L 0.695 0.725 17.65 18.42
M 30˚ NOM 30˚ NOM
N 0.475 0.495 12.07 12.57
R 0.430 0.450 10.92 11.43
Y 0.048 0.052 1.22 1.32
Z 0.106 0.118 2.68 3.00

MILLIMETERSINCHES

CASE 344-15

ISSUE AA

UNIBODY PACKAGE

SEATING

PLANE

-T-

R

-A-

U

L

H

N

PORT #1

POSITIVE

PRESSURE

(P1)

B

PIN 1

12 34

-P-

0.25 (0.010) T

M

J

C

S

Q

F

G

D 4 PL

0.13 (0.005) Q

S

M

S

S

T

NOTES:

1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.

2. + OUTPUT

3. + SUPPLY

MILLIMETERSINCHES

DIM MIN MAX MIN MAX

A 1.145 1.175 29.08 29.85
B 0.685 0.715 17.40 18.16

-Q-

K

S

C 0.305 0.325 7.75 8.26
D 0.016 0.020 0.41 0.51
F 0.048 0.064 1.22 1.63
G 0.100 BSC 2.54 BSC
H 0.182 0.194 4.62 4.93
J 0.014 0.016 0.36 0.41
K 0.695 0.725 17.65 18.42
L 0.290 0.300 7.37 7.62
N 0.420 0.440 10.67 11.18
P 0.153 0.159 3.89 4.04
Q 0.153 0.159 3.89 4.04
R 0.230 0.250 5.84 6.35
S

0.220 0.240 5.59 6.10

U 0.910 BSC 23.11 BSC

STYLE 1:
PIN 1. GROUND

CASE 344B-01

ISSUE B

UNIBODY PACKAGE

MPX53

Sensors

6 Freescale Semiconductor

PACKAGE DIMENSIONS

Pressure

R

PORT #2

SEATING
PLANE

-T- -T-

V

PORT #1

U

W

L

H

-A-

PORT #2

N

VACUUM
(P2)

PORT #1
POSITIVE PRESSURE
(P1)

-Q-

SEATING

B

PLANE

PIN 1

-P-

M

0.25 (0.010) T

Q

J

C

0.13 (0.005) Q

M

T

12 43

K

S

S

F

G

D

4 PL

S

S

S

NOTES:

1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 1.145 1.175 29.08 29.85
B 0.685 0.715 17.40 18.16
C 0.405 0.435 10.29 11.05
D 0.016 0.020 0.41 0.51
F 0.048 0.064 1.22 1.63
G 0.100 BSC 2.54 BSC
H 0.182 0.194 4.62 4.93
J 0.014 0.016 0.36 0.41
K 0.695 0.725 17.65 18.42
L 0.290 0.300 7.37 7.62
N 0.420 0.440 10.67 11.18
P 0.153 0.159 3.89 4.04
Q 0.153 0.159 3.89 4.04
R 0.063 0.083 1.60 2.11
S

0.220 0.240 5.59 6.10

U 0.910 BSC 23.11 BSC
V 0.248 0.278 6.30 7.06
W 0.310 0.330 7.87 8.38

STYLE 1:

PIN 1. GROUND

MILLIMETERSINCHES

CASE 344C-01

ISSUE B

UNIBODY PACKAGE

CASE 482C-03

ISSUE B

SMALL OUTLINE PACKAGE

MPX53

Sensors
Freescale Semiconductor 7

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MPX53
Rev. 7
05/2009