FREESCALE MPX 4250DP Datasheet

Page 1
Pressure
Freescale Semiconductor
+
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
The MPX4250 series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, particularly those employing a microcontroller or microprocessor with A/D inputs. This transducer combines advanced micromachining techniques, thin­film metallization, and bipolar processing to provide an accurate, high-level analog output signal that is proportional to the applied pressure. The small form factor and high reliability of on-chip integration make the Freescale sensor a logical and economical choice for the automotive system engineer.
Features
• Differential and Gauge Applications Available
• 1.4% Maximum Error Over 0° to 85°C
• Patented Silicon Shear Stress Strain Gauge
• Temperature Compensated Over –40° to +125°C
• Offers Reduction in Weight and Volume Compared to Existing Hybrid Modules
• Durable Epoxy Unibody Element
MPX4250
Rev 7, 1/2009
MPX4250
Series
0 to 250 kPa (0 to 36.3 psi)
0.2 to 4.9 V Output
Application Examples
• Ideally Suited for Microprocessor or Microcontroller-Based Systems
Device Name
Unibody Package (MPX4250 Series)
MPX4250D MPX4250GP MPX4250DP
Package
Options
Tray 867 Tray 867B Tray 867C
MPX4250D
CASE 867
Case
No.
ORDERING INFORMATION
# of Ports Pressure Type
None Single Dual Gauge Differential Absolute

UNIBODY PACKAGES

MPX4250GP
CASE 867B
MPX4250DP
CASE 867C
Device Marking
MPX4250D MPX4250GP MPX4250DP
© Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
Page 2
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 5.1 Vdc, TA = 25°C unless otherwise noted, P1 > P2.
Decoupling circuit shown in Figure 3 required to meet electrical specifications.)
Characteristic Symbol Min Typ Max Unit
Pressure Range Supply Voltage Supply Current I Minimum Pressure Offset @ V Full Scale Output @ V Full Scale Span @ V Accuracy Sensitivity ΔV/ΔP 18.8 —- mV/kPa
Response Time Output Source Current at Full Scale Output I Warm-Up Time
Offset Stability
(1)
(2)
= 5.1 Volts
S
= 5.1 Volts
S
= 5.1 Volts
S
(6)
(7)
(8)
(9)
(5)
(3)
(4)
(0 to 85°C) (0 to 85°C) (0 to 85°C) (0 to 85°C)
P
OP
V
S
o
V
off
V
FSO
V
FSS
———±1.4 %V
t
R
o+
0 250 kPa
4.85 5.1 5.35 Vdc — 7.0 10 mAdc
0.139 0.204 0.269 Vdc
4.844 4.909 4.974 Vdc — 4.705 Vdc
FSS
—1.0—-ms —0.1—-mAdc
——20—-ms ——±0.5 —- %V
FSS
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range.
3. Offset (V
4. Full Scale Output (V
5. Full Scale Span (V minimum rated pressure.
) is defined as the output voltage at the minimum rated pressure.
off
) is defined as the output voltage at the maximum or full rated pressure.
FSO
) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
FSS
6. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range.
Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to
and from the minimum or maximum operating temperature points, with zero differential pressure applied.
Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the
minimum or maximum rated pressure, at 25°C. TcSpan: Output deviation over the temperature range of 0 to 85°C, relative to 25°C. T cOf fset: Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85°C, relative to 25°C. Variation from Nominal: The variation from nominal values, for Offset or Full Scale Span, as a percent of V
, at 25°C.
FSS
7. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure.
8. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized.
9. Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
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Maximum Ratings
Pressure

Table 2. Maximum Ratings

Maximum Pressure (P1 > P2) P Storage Temperature T Operating Temperature T
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
(1)
Rating Symbol Value Unit
MAX
STG
A
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
3
V
S
Sensing Element
Thin Film
Temperature
Compensation
and
Gain Stage #1
Gain Stage #2
and
Ground
Reference
Shift Circuitry
1000 kPa –40 to +125 °C –40 to +125 °C
V
out
1
GND
2
Pins 1, 5, 6, 7, and 8 are NO CONNECTS for small outline package devices.
Figure 1. Fully Integrated Pressure Sensor Schema ti c
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Sensors Freescale Semiconductor 3
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Pressure

On-chip Temperature Compensation and Calibration

Figure 2 illustrates the differential/gauge pressure sensing
chip in the basic chip carrier (Case 867). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm.
The MPX4250 series pressure sensor operating characteristics and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor
.
Fluoro Silicone
Die Coat
Die
Wire Bond
Lead Frame
Figure 2. Cross Sectional Diagram (not to scale)
performance and long-term reliability. Contact the factory for information regarding media compatibility in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller.
Figure 4 shows the sensor output signal relative to
pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range
Stainless Steel
Metal Cover
P1
Epoxy Case
RTV Die Bond
P2
+5.1 V
Output
470 pFGND
1.0 μF
0.01 μF
V
V
s
out
IPS
Figure 3. Recommended Power Supply Decoupling and Output Filtering
(For additional output filtering, please refer to Application Note AN1535)
5.0 Transfer Function:
4.5 V
= Vs* (0.00369*P + 0.04) ± Error
out
4.0
V
= 5.1 Vdc
S
Temperature = 0 to 85°C
3.5
3.0
2.5
2.0
Output (Volts)
1.5
1.0
0.5
0
0
MAX
102030405060708090
100
110
120
130
Pressure in kPa
140
MIN
150
160
170
180
190
TYP
200
210
220
230
240
250
260
Figure 4. Output versus Absolute Pressure
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Transfer Function (MPX4250)
Pressure
Nominal Transfer Value: V
Temperature Error Band
4.0
3.0
Temperature
Error
Factor
2.0
1.0
0.0
NOTE: The Temperature Multiplier is a linear response from 0°C to –40°C and from 85°C to 125°C.
= VS x (0.00369 x P + 0.04)
out
± (Pressure Error x Temp. Factor x 0.00369 x V V
= 5.1 ± 0.25 Vdc
S
Temp Multiplier
–40 3
0 to 85 1
+125 3
–40 –20 0 20 40 60
Temperature in °C
)
S
14012010080
Pressure Error Band
Pressure
Error (kPa)
5.0
4.0
3.0
2.0
1.0
–1.0 –2.0 –3.0 –4.0 –5.0
0
0
75 100 125 150 175 200 22525 50 250
Pressure Error (Max)
0 to 250 kPa ±3.45 kPa
Pressure
(kPa)
MPX4250
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Pressure

PACKAGE DIMENSIONS

C
R
POSITIVE PRESSURE
M
B
J S
-A-
SEATING PLANE
STYLE 1:
PIN 1. VOUT
2. GROUND
3. VCC
4. V1
5. V2
6. VEX
PIN 1
-T-
123456
F
D
STYLE 2:
PIN 1. OPEN
(P1)
N
G
6 PL
0.136 (0.005) T
2. GROUND
3. -VOUT
4. VSUPPLY
5. +VOUT
6. OPEN
L
M
M
A
STYLE 3:
PIN 1. OPEN
NOTES:
2. GROUND
3. +VOUT
4. +VSUPPLY
5. -VOUT
6. OPEN
1.
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH.
2. DIMENSION -A- IS INCLUSIVE OF THE MOLD
3. STOP RING. MOLD STOP RING NOT TO EXCEED
16.00 (0.630).
MILLIMETERSINCHES
DIM
MIN
A
0.595
B
0.514
C
0.200
D
0.027
F
0.048
0.100 BSC 2.54 BSC
G
J
0.014
L
0.695 30˚ NOM 30˚ NOM
M N
0.475
R
0.430
S
0.090
MAX
0.630
0.534
0.220
0.033
0.064
0.016
0.725
0.495
0.450
0.105
MAX
MIN
16.00
15.11
13.56
13.06
5.59
5.08
0.84
0.68
1.63
1.22
0.40
0.36
18.42
17.65
12.57
12.07
11.43
10.92
2.29 2.66
BASIC ELEMENT (D)
CASE 867-08
ISSUE N
PORT #1
POSITIVE
PRESSURE
(P1)
PORT #2
VACUUM
(P2)
SEATING
PLANE
P
0.25 (0.010) T
X
-T- -T-
J
M
M
Q
-A-
U
L
R
N
W
V
PORT #2 VACUUM (P2)
PORT #1 POSITIVE PRESSURE (P1)
-Q-
B
C
SEATING PLANE
PIN 1
G
123456
F
6 PL
D
0.13 (0.005)
S
M
PRESSURE AND VACUUM SIDE DUAL PORTED (DP)
CASE 867C-05
ISSUE F
NOTES:
1.2.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 1.145 1.175 29.08 29.85 B 0.685 0.715 17.40 18.16 C 0.405 0.435 10.29 11.05 D 0.027 0.033 0.68 0.84 F 0.048 0.064 1.22 1.63 G 0.100 BSC 2.54 BSC J 0.014 0.016 0.36 0.41 K 0.695 0.725 17.65 18.42 L 0.290 0.300 7.37 7.62 N 0.420 0.440 10.67 11.18 P 0.153 0.159 3.89 4.04 Q 0.153 0.159 3.89 4.04 R 0.063 0.083 1.60 2.11 S
0.220 0.240 5.59 6.10
K
M
A
U 0.910 BSC 23.11 BSC V 0.182 0.194 4.62 4.93
W 0.310 0.330 7.87 8.38
X 0.248 0.278 6.30 7.06
STYLE 1:
PIN 1. VOUT
2. GROUND
CC
3. V
4. V1
5. V2
EX
6. V
MILLIMETERSINCHES
MPX4250
Sensors
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PACKAGE DIMENSIONS
Pressure
PAGE 1 OF 2
PRESSURE SIDE PORTED (GP)
CASE 867B-04
ISSUE G
MPX4250
Sensors Freescale Semiconductor 7
Page 8
Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 2
PRESSURE SIDE PORTED (GP)
CASE 867B-04
ISSUE G
MPX4250
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© Freescale Semiconductor, Inc. 2009. All rights reserved.
MPX4250 Rev. 7 1/2009
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