100 kPa On-Chip Temperature
Compensated and Calibrated
Silicon Pressure Sensors
The MPX2100 series devices silicon piezoresistive pressure sensors
providing a highly accurate and linear voltage output directly proportional to
the applied pressure. The sensor is a single, monolithic silicon diaphragm
with the strain gauge and a thin-film resistor network integrated on-chip.
The chip is laser trimmed for precise span and offset calibration an
temperature compensation.
Features
• Temperature Compensated Over 0°C to +85°C
• Available in Absolute, Differential and Gauge Configurations
Figure 1 shows a block diagram of the internal circuitry on the stand-alone pressure sensor chip.
V
S
3
Thin Film
Temperature
Sensing
Element
GND
Compensation
and Calibration
Circuitry
1
Figure 1. Temperature Compensated Pressure Sensor Schematic
Voltage Output versus Applied Differential Pressure
The differential voltage output of the sensor is directly
proportional to the differential pressure applied.
The absolute sensor has a built-in reference vacuum. The
output voltage will decrease as vacuum, relative to ambient,
is drawn on the pressure (P1) side.
The output voltage of the differential or gauge sensor
increases with increasing pressure applied to the pressure
side (P1) relative to the vacuum side (P2). Similarly, output
voltage increases as increasing vacuum is applied to the
vacuum side (P2) relative to the pressure side (P1).
Pressure Hysteresis
Temperature Hysteresis
Temperature Effect on Full Scale Span
Temperature Effect on Offset
Input Impedance
Output Impedance
Response Time
Warm-Up
Offset Stability
(1)
(2)
(3)
MPX2100D Series
MPX2100A Series
(5)
MPX2100D Series
MPX2100A Series
(5)
(0 to 100 kPa)
(5)
(-40°C to +125°C)
(5)
(5)
(6)
(10% to 90%)
(7)
Pressure
P
OP
V
S
I
o
V
FSS
V
off
ΔV/ΔP— 0.4 —mV/kPa
—
—
——± 0.1—%V
——± 0.5—%V
TCV
FSS
TCV
off
Z
in
Z
out
t
R
——20—ms
——± 0.5—%V
0—100kPa
—1016Vdc
—6.0—mAdc
38.54041.5mV
-1.0
-2.0
-0.25
-1.0
-1.0—1.0%V
—
—
—
—
1.0
2.0
0.25
1.0
%V
mV
FSS
FSS
FSS
FSS
-1.0—1.0mV
1000—2500Ω
1400—3000Ω
—1.0—ms
FSS
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional
error due to device self-heating.
3. Full Scale Span (V
minimum rated pressure.
4. Offset (V
) is defined as the output voltage at the minimum rated pressure.
off
) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
FSS
5. Accuracy (error budget) consists of the following:
Linearity:Output deviation from a straight line relationship with pressure, using end point method, over the specified
pressure range.
T emperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and
from the minimum or maximum operating temperature points, with zero differential pressure applied.
Pressure Hysteresis:Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum
or maximum rated pressure, at 25°C.
TcSpan:Output deviation at full rated pressure over the temperature range of 0 to 85°C, relative to 25°C.
TcOffset:Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85°C, relative to 25°C.
6. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.
7. Offset stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPX2100
Sensors
Freescale Semiconductor3
Pressure
Maximum Ratings
Table 2. Maximum Ratings
Maximum Pressure (P1 > P2)
Storage Temperature
Operating Temperature
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
(1)
RatingSymbolValueUnit
P
max
T
stg
T
A
LINEARITY
Linearity refers to how well a transducer's output follows
= V
the equation: V
out
pressure range. There are two basic methods for calculating
nonlinearity: (1) end point straight line fit (see Figure 2) or (2)
a least squares best line fit. While a least squares fit gives the
“best case” linearity error (lower numerical value), the
+ sensitivity x P over the operating
off
Least Squares Fit
Exaggerated
Performance
Curve
calculations required are burdensome.
Conversely, an end point fit will give the “worst case” error
(often more desirable in error budget calculations) and the
calculations are more straightforward for the user. Motorola's
specified pressure sensor linearities are based on the end
point straight line method measured at the midrange
pressure.
Relative Voltage Output
400kPa
-40 to +125°C
-40 to +125°C
Straight Line
Deviation
Deviation
End Point
Straight Line Fit
Least
Square
Offset
050100
Pressure (% Fullscale)
Figure 2. Linearity Specification Comparison
MPX2100
Sensors
4Freescale Semiconductor
On-Chip Temperature Compensation and Calibration
Pressure
Figure 3 shows the output characteristics of the
MPX2100 series at 25°C. The output is directly proportional
to the differential pressure and is essentially a straight line.
VS = 10 Vdc
40
T
= 25°C
35
30
25
20
15
Output (mVdc)
10
-5
kPa
PSI
A
P1 > P2
MAX
5
0
025
3.62
TYP
Figure 3. Output versus Pressure Differential
Silicone Gel
Die Coat
Wire Bond
Differential/Gauge
Die
P1
Stainless Steel
Metal Cover
Epoxy
Case
50
7.25
The effects of temperature on Full-Scale Span and Offset
are very small and are shown under Operating
Characteristics.
Span
Range
(Typ)
MIN
75
10.87
Wire Bond
14.5
Silicone Gel
Die Coat
100
Offset
(Typ)
Absolute
Die
P1
Stainless Steel
Metal Cover
Epoxy
Case
Lead Frame
Differential/Gauge
P2
Element
Bond
Die
Figure 4. Cross-Sectional Diagram (not to scale)
Figure 4 illustrates the absolute sensing configuration
(right) and the differential or gauge configuration in the basic
chip carrier (Case 344). A silicone gel isolates the die surface
and wire bonds from the environment, while allowing the
pressure signal to be transmitted to the silicon diaphragm.
Lead Frame
Absolute Element
P2
Die
Bond
The MPX2100 series pressure sensor operating
characteristics and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
performance and long term reliability. Contact the factory for
information regarding media compatibility in your application.
MPX2100
Sensors
Freescale Semiconductor5
Pressure
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing the silicone gel
which isolates the die. The differential or gauge sensor is
designed to operate with positive differential pressure
applied, P1 > P2. The absolute sensor is designed for
vacuum applied to P1 side.
The Pressure (P1) side may be identified by using the
table below:
Stainless Steel Cap
Side with Part Marking
Side with Port Attached
Side with Port Attached
Stainless Steel Cap
MPX2100
Sensors
6Freescale Semiconductor
PACKAGE DIMENSIONS
Pressure
C
R
M
1
B
-A-
23
4
N
PIN 1
1234
L
-T-
SEATING
J
PLANE
F
D
4 PL
0.136 (0.005)T
STYLE 1:
PIN 1. GROUND
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
G
M
M
A
STYLE 2:
PIN 1. V
2. - SUPPLY
3. + SUPPLY
4. GROUND
F
DAMBAR TRIM ZONE:
THIS IS INCLUDED
WITHIN DIM. "F" 8 PL
CC
Y
STYLE 3:
PIN 1. GND
2. -VOUT
3. VS
4. +VOUT
NOTES:
DIMENSIONING AND TOLERANCING PER ASME
1.
Y14.5M, 1994.
2.
CONTROLLING DIMENSION: INCH.
3.
DIMENSION -A- IS INCLUSIVE OF THE MOLD
STOP RING. MOLD STOP RING NOT TO EXCEED
Z
16.00 (0.630).
DIM MINMAX MINMAX
A 0.5950.630 15.1116.00
B 0.5140.534 13.0613.56
C 0.2000.2205.085.59
D 0.0160.0200.410.51
F0.0480.0641.221.63
G0.100 BSC2.54 BSC
J0.0140.0160.360.40
L0.6950.725 17.6518.42
M30˚ NOM30˚ NOM
N 0.4750.495 12.0712.57
R 0.4300.450 10.9211.43
Y0.048 0.0521.221.32
Z0.1060.1182.683.00
MILLIMETERSINCHES
CASE 344-15
ISSUE AA
UNIBODY PACKAGE
SEATING
PLANE
-T-
R
-A-
U
L
H
N
PORT #1
POSITIVE
PRESSURE
(P1)
B
PIN 1
12 34
-P-
0.25 (0.010)T
M
J
C
S
Q
F
G
D 4 PL
0.13 (0.005)Q
S
M
S
S
T
NOTES:
1.2.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: INCH.
1.2.DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
CONTROLLING DIMENSION: INCH.
DIM MINMAX MINMAX
A 1.1451.175 29.0829.85
B 0.6850.715 17.4018.16
C 0.3050.3257.758.26
D 0.0160.0200.410.51
F0.0480.0641.221.63
G0.100 BSC2.54 BSC
H 0.1820.1944.624.93
J0.0140.0160.360.41
K 0.6950.725 17.6518.42
L0.2900.3007.377.62
N 0.4200.440 10.6711.18
P0.153 0.1593.894.04
Q 0.1530.1583.894.04
R 0.2300.2505.846.35
S
0.2200.2405.596.10
U0.910 BSC23.11 BSC
STYLE 1:
S
PIN 1. GROUND
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
MILLIMETERSINCHES
CASE 344D-01
ISSUE B
UNIBODY PACKAGE
MPX2100
Sensors
Freescale Semiconductor9
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