Freescale MMG3003NT1 User Manual

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Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Broadband High Linearity Amplifier

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The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small- signal, high linearity, general purpose applica-

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tions. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.

Features

• Frequency: 40-3600 MHz

• P1dB: 24 dBm @ 900 MHz

• Small-Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

R NEW DE

Document Number: MMG3003NT1

Rev. 7, 3/2008

MMG3003NT1

40-3600 MHz, 20 dB

24 dBm

InGaP HBT

1

2

3

CASE 1514-02, STYLE 1

SOT-89

PLASTIC

Table 1. Typical Performance

Characteristic Symbol 900

Small -Signal Gain

(S21)

Input Return Loss

(S11)

MMENDED F

Output Return Loss

(S22)

Power Output @1dB

Compression

Third Order Output

Intercept Point

1. V

= 6.2 Vdc, TC = 25°C, 50 ohm system

CC

ORL -9.3 −14.5 - 10.2 dB

P1db 24 23.3 20.5 dBm

(1)

2140

3500

MHz

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IRL -15 -14.1 -11.2 dB

IP3 40.5 40 37 dBm

20 16.9 12 dB

p

Unit

MHz

Table 2. Maximum Ratings

Rating Symbol Value Unit

Supply Voltage V

Supply Current I

RF Input Power P

Storage Temperature Range T

Junction Temperature

2. For reliable operation, the junction temperature should not exceed 150°C.

(2)

T RE

Table 3. Thermal Characteristics (V

Thermal Resistance, Junction to Case R

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3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

= 6.2 Vdc, ICC = 180 mA, TC = 25°C)

CC

Characteristic Symbol Value

θ

JC

CC

in

stg

T

J

31.6 °C/W

7 V

400 mA

15 dBm

-65 to +150 °C

150 °C

(3)

Unit

NOT RECOMMENDED FOR NEW DESIGN

RF Device Data Freescale Semiconductor

MMG3003NT1

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Table 4. Electrical Characteristics (V

Small -Signal Gain (S21) G

Input Return Loss (S11) IRL — -15 — dB

Output Return Loss (S22) ORL — -9.3 — dB

Power Output @ 1dB Compression P1dB — 24 — dBm

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Third Order Output Intercept Point IP3 — 40.5 — dBm

Noise Figure NF — 4 — dB

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Supply Current

Supply Voltage

1. For reliable operation, the junction temperature should not exceed 150°C.

(1)

R NEW DE

= 6.2 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)

CC

Characteristic Symbol Min Typ Max Unit

p

I

CC

V

CC

19.3 20 — dB

160 180 205 mA

— 6.2 — V

MMENDED F

T RE N

MMG3003NT1

2

NOT RECOMMENDED FOR NEW DESIGN

RF Device Data

Freescale Semiconductor

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Table 5. Functional Pin Description

Number

1 RF

2 Ground

3 RF

Pin Function

in

/DC Supply

out

2

1

32

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Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology Class

Human Body Model (per JESD 22-A114) 1B (Minimum)

Machine Model (per EIA/JESD 22-A115) A (Minimum)

Charge Device Model (per JESD 22-C101) IV (Minimum)

Table 7. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J - STD-020 1 260 °C

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Figure 1. Functional Diagram

MMENDED F

T RE N

RF Device Data Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

MMG3003NT1

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50 OHM TYPICAL CHARACTERISTICS

25

TC = 85°C

25°C

−40°C

20

N

15

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, SMALL−SIGNAL GAIN (dB)

p

G

VCC = 6.2 Vdc

10

0

Figure 2. Small-Signal Gain (S21) versus

1234

23

21

R NEW DE

19

17

15

13

, SMALL−SIGNAL GAIN (dB)

p

G

11

9

5

Figure 4. Small-Signal Gain versus Output

3500 MHz, C5 = 0.5 pF

10 15 20

P

out

f, FREQUENCY (GHz)

Frequency

900 MHz, C5 = 2.7 pF

1960 MHz, C5, C6 = 1.3 pF

2140 MHz, C5, C6 = 1.3 pF

2600 MHz, C5 = 1.2 pF

, OUTPUT POWER (dBm)

Power

VCC = 6.2 Vdc ICC = 180 mA

0

S22

−10

S11, S22(dB)

−20

S11

−30

0

Figure 3. Input/Output Return Loss versus

25

24

23

22

21

20

19

18

P1dB, 1 dB COMPRESSION POINT (dBm)

17

25

12 3

f, FREQUENCY (GHz)

Frequency

f, FREQUENCY (GHz)

Figure 5. P1dB versus Frequency

VCC = 6.2 Vdc ICC = 180 mA

4

VCC =6.2 Vdc ICC = 180 mA

3.532.521.510.5

200

MMENDED F

150

100

T RE

50

, COLLECTOR CURRENT (mA)

CC

I

0

N

4

Figure 6. Collector Current versus Collector

MMG3003NT1

4

4.5 5 5.5

VCC, COLLECTOR VOLTAGE (V)

Voltage

45

42

39

36

33

30

6

6.5

0

IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)

Figure 7. Third Order Output Intercept Point

123

f, FREQUENCY (GHz)

versus Frequency

VCC = 6.2 Vdc ICC = 180 mA 100 kHz Tone Spacing

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RF Device Data

Freescale Semiconductor

NOT RECOMMENDED FOR NEW DESIGN

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50 OHM TYPICAL CHARACTERISTICS

45

42

39

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36

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33

30

5.8

IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)

Figure 8. Third Order Output Intercept Point

−30

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VCC, COLLECTOR VOLTAGE (V)

versus Collector Voltage

f = 900 MHz 100 kHz Tone Spacing

6.2 6.4 6.6

R NEW DE

−40

−50

−60

IMD, THIRD ORDER

−70

INTERMODULATION DISTORTION (dBc)

−80

P

, OUTPUT POWER (dBm)

out

Figure 10. Third Order Intermodulation versus

Output Power

MMENDED F

8

6

VCC = 6.2 Vdc ICC = 180 mA f = 900 MHz 100 kHz Tone Spacing

24912151821

42

41

40

39

IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)

Figure 9. Third Order Output Intercept Point

5

10

4

10

MTTF (YEARS)

3

10

120

−20

−30

125 130 135 140 145

NOTE: The MTTF is calculated with VCC = 6.2 Vdc, ICC = 180 mA

Figure 11. MTTF versus Junction Temperature

VCC = 6.2 Vdc, ICC = 180 mA, f = 2140 MHz, C5 = 1.3 pF Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)

VCC = 6.2 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 10 W Dropping Resistor

T, TEMPERATURE (_C)

versus Case Temperature

TJ, JUNCTION TEMPERATURE (°C)

100−40 −20 0 20 40 60 80

150

4

T RE

NF, NOISE FIGURE (dB)

2

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0

0.5 2 3

Figure 12. Noise Figure versus Frequency

RF Device Data Freescale Semiconductor

VCC = 6.2 Vdc ICC = 180 mA

1 1.5 2.5 3.5

f, FREQUENCY (GHz)

−40

−50

−60

NOT RECOMMENDED FOR NEW DESIGN

−70

4

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

9

P

, OUTPUT POWER (dBm)

out

Figure 13. Single-Carrier W-CDMA Adjacent

Channel Power Ratio versus Output Power

17151311

MMG3003NT1

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50 OHM APPLICATION CIRCUIT: 40-800 MHz

V

SUPPLY

R1

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RF

INPUT

Z1 0.347″ x 0.058″ Microstrip Z2 0.575″ x 0.058″ Microstrip Z3 0.172″ x 0.058″ Microstrip Z4 0.403″ x 0.058″ Microstrip

30

R NEW DE

20

10

0

−10

S21, S11, S22 (dB)

Z1 Z2

C1

S21

S22

C3 C4

L1

DUT

V

CC

Figure 14. 50 Ohm Test Circuit Schematic

Z4Z3

C2

Z5 0.286″ x 0.058″ Microstrip Z6 0.061″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″, εr = 4.1

C1

RF

Z5

C5

OUTPUT

Z6

R1

C4 C3

L1

C2

C5

−20

−30 0

200 400 600

Figure 15. S21, S11 and S22 versus Frequency

MMENDED F

Table 8. 50 Ohm Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2, C4 0.01 µF Chip Capacitors C0603C103J5RAC Kemet

C3 68 pF Chip Capacitor C0805C680J5RAC Kemet

(1)

C5

L1 470 nH Chip Inductor BK2125HM471-T Taiyo Yuden

R1

1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.

S11

f, FREQUENCY (MHz)

2.7 pF Chip Capacitor 12105J2R7BS AVX

7.5 W Chip Resistor

VCC = 6.2 Vdc ICC = 180 mA

800

MMG30XX Rev 2

Figure 16. 50 Ohm Test Circuit Component Layout

RK73B2ATTE7R5J KOA Speer

T RE

Table 9. Supply Voltage versus R1 Values

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Supply Voltage 7 8 9 10 11 12 V

R1 Value 4.4 10 15.6 21 27 32 Ω

Note: To provide VCC = 6.2 Vdc and ICC = 180 mA at the device.

NOT RECOMMENDED FOR NEW DESIGN

MMG3003NT1

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RF Device Data

Freescale Semiconductor

Freescale MMG3003NT1 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual